MOSFET – Power, N-Channel, SUPERFET III, Easy Drive

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SUPERFET III, Easy Drive

650 V, 24 A, 125 mW

FCB125N65S3

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Features

• ^{700 V @ T}

J

= 150 ° C

• ^{Typ. R}

DS(on)

= 105 m W

• Ultra Low Gate Charge (Typ. Q

_g

= 46 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 439 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar

See detailed ordering and shipping information on page 2 of

ORDERING INFORMATION www.onsemi.com

V_DSS R_DS(ON) MAX I_D MAX

650 V 125 mW @ 10 V 24 A

POWER MOSFET D

S G

D²−PAK CASE 418AJ

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FCB125N65S3 = Specific Device Code MARKING DIAGRAM

G S

D

$Y&Z&3&K FCB 125N65S3

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ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage − DC ±30 V

− AC (f > 1 Hz) ±30

I_D Drain Current − Continuous (TC = 25°C) 24 A

− Continuous (TC = 100°C) 15

I_DM Drain Current − Pulsed (Note 1) 60 A

EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ

I_AS Avalanche Current (Note 2) 3.7 A

EAR Repetitive Avalanche Energy (Note 1) 1.81 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 181 W

− Derate Above 25°C 1.45 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I_AS = 3.7 A, R_G = 25 W, starting TJ = 25°C.

3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.69 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Reel Size Tape Width Shipping^†

FCB125N65S3 FCB125N65S3 D²−PAK 330 mm 24 mm 800 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS / DTJ Breakdown Voltage Temperature

Coefficient I_D= 1 mA, Referenced to 25_C 0.68 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 1 mA

V_DS= 520 V, T_C= 125_C 1.35

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 0.59 mA 2.5 4.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 12 A 105 125 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 12 A 16 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 1 MHz 1940 pF

C_oss Output Capacitance 40 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 439 pF Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 62 pF

Qg(tot) Total Gate Charge at 10 V V_DS= 400 V, I_D= 12 A, V_GS= 10 V

(Note 4) 46 nC

Qgs Gate to Source Gate Charge 12 nC

Qgd Gate to Drain “Miller” Charge 19 nC

ESR Equivalent Series Resistance f = 1 MHz 4 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 400 V, ID= 12 A, VGS= 10 V, R_g= 4.7W

(Note 4)

25 ns

tr Turn-On Rise Time 26 ns

td(off) Turn-Off Delay Time 73 ns

tf Turn-Off Fall Time 17 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 24 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 60 A

V_SD Source to Drain Diode Forward Voltage V_GS= 0 V, I_SD = 12 A 1.2 V t_rr Reverse Recovery Time VDD= 400 V, ISD = 12 A,

dI_F/dt = 100 A/ms 339 ns

Q_rr Reverse Recovery Charge 5.7 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

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TYPICAL PERFORMANCE CHARACTERISTICS

1 6 10

V_GS, Gate−Source Voltage (V) ID, Drain Current (A)

3

0.00 0.1 0.2 0.3

0.0 1.0 1.5

0.1 1 10 100

6 8 10 I_D, Drain Current (A)

RDS(ON), Drain−Source On−Resistance (W)

40 V_SD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A) oltage (V) 0.4

0.1 1 10

1 10

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, Drain−Source Voltage (V) 20

ID, Drain Current (A)

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature 60

20

100 1000 10000 100000

0.5 100

0.1

100

9

0.01

0.001 250 ms Pulse Test

TC = 25°C VGS = 10.0 V

8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

VDS = 20 V 250 ms Pulse Test

25°C

−55°C 150°C

T_C = 25°C

V_GS = 10 V

V_GS = 20 V

10 30 50

VGS = 0 V 250 ms Pulse Test

25°C 150°C

−55°C

C C_iss

ID = 12 A

V_DS = 130 V

VDS = 400 V

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TYPICAL PERFORMANCE CHARACTERISTICS

(continued)

10

EOSS, (mJ)

2

V_GS = 10 V I_D = 12 A

1 10 100 1000

0.01 0.1 10 100

025 10 20 25

V_DS, Drain−Source Voltage (V) ID, Drain Current (A)

T_C, Case Temperature (5C) ID, Drain Current (A)

50 75 100 125 150

0.8 −50 0.9 1.0 1.1 1.2

0.0 0.5 1.0 1.5 2.0 2.5

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On−Resistance Variation vs. Temperature

T_J, Junction Temperature (5C) BVDSS, Drain−Source Breakdown Voltage (Normalized)

0 50 100 150

T_J, Junction Temperature (5C) RDS(on), Drain−Source On−Resistance (Normalized)

−50 0 50 100 150

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 1

5 15

4 6 8

V_GS = 0 V I_D = 10 mA

T_C = 25°C T_J = 150°C Single Pulse Operation in this Area is Limited by RDS(on)

DC

100 ms 1 ms

30 ms

10 ms

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TYPICAL PERFORMANCE CHARACTERISTICS

(continued)

t, Rectangular Pulse Duration (sec) r(t), Normalized Effective Transient Thermal Resistance

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10

0.001 0.01 0.1 1 2

1

Z_qJC(t) = r(t) x R_qJC R_qJC = 0.69°C/W

Peak T_J = P_DM x Z_qJC(t) + T_C Duty Cycle, D = t₁ / t₂ D = 0.5

0.2 0.1 0.05 0.02 0.01

DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

P_DM t₁

t₂

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Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

td(on) td(off)

Q_g

Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G

VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

−dv/dt controlled by R_G

−I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

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D²PAK−3 (TO−263, 3−LEAD) CASE 418AJ

ISSUE F

DATE 11 MAR 2021 SCALE 1:1

XX XXXXXXXXX AWLYWWG

GENERIC MARKING DIAGRAMS*

XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot

Y = Year

WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator

IC Standard

XXXXXXXXG AYWW

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.

Rectifier XXXXXXXXGAYWW AKA

SSG XXXXXX XXYMW

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MOSFET – Power, N-Channel, SUPERFET III, Easy Drive

SUPERFET III, Easy Drive

650 V, 24 A, 125 mW

FCB125N65S3

Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

• 700 V @ T

= 150 ° C

• Typ. R

= 105 m W

• Ultra Low Gate Charge (Typ. Q

= 46 nC)

• Low Effective Output Capacitance (Typ. C

= 439 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar

TYPICAL PERFORMANCE CHARACTERISTICS

TYPICAL PERFORMANCE CHARACTERISTICS

TYPICAL PERFORMANCE CHARACTERISTICS

• ^{700 V @ T}

• ^{Typ. R}