MOSFET – N-Channel, SUPERFET II, FRFET

SUPERFET II, FRFET

600 V, 37 A, 104 mW

FCH104N60F

Description

SUPERFET

II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET

MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Features

• ^{650 V @ T}

= 150°C

• ^{Typ. R}

= 98 m W

• Ultra Low Gate Charge (Typ. Q

= 107 nC)

• Low Effective Output Capacitance (Typ. C

= 109 pF)

• 100% Avalanche Tested

• This Device is Pb−Free and is RoHS Compliant

• Telecom / Server Power Supplies

• Industrial Power Supplies

• ^{EV Charger}

• UPS / Solar

TO−247 CASE 340CK www.onsemi.com

D

S G

V_DSS R_DS(ON) MAX I_D MAX

600 V 104 mW 37 A

N-Channel MOSFET

G D S

MARKING DIAGRAM

$Y&Z&3&K FCH 104N60F

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter FCH104N60F Unit

VDSS Drain to Source Voltage 600 V

V_GSS Gate to Source Voltage DC ±20 V

AC (f > 1 Hz) ±30

I_D Drain Current Continuous (TC = 25°C) 37 A

Continuous (TC = 100°C) 24

I_DM Drain Current Pulsed (Note 1) 111 A

EAS Single Pulsed Avalanche Energy (Note 2) 809 mJ

I_AR Avalanche Current (Note 1) 6.8 A

EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 50

PD Power Dissipation (T_C = 25°C) 357 W

Derate Above 25°C 2.85 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 6.8 A, R_G = 25W, starting T_J = 25°C.

3. ISD ≤ 18.5 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter FCH104N60F Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.35 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FCH104N60F FCH104N60F TO−247 Tube N/A N/A 30 Units

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 10 mA, T_J= 25_C 600 − − V V_GS= 0 V, I_D= 10 mA, T_J= 150_C 650 − −

DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 10 mA, Referenced to 25_C − 0.67 − V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 600 V, V_GS= 0 V − − 10 mA

V_DS= 480 V, V_GS= 0 V, T_C= 125_C − 16 −

I_GSS Gate to Body Leakage Current V_GS= ±20 V, V_DS= 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage VGS= VDS, ID= 250mA 3 − 5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 18.5 A − 98 104 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 18.5 A − 47 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 100 V, V_GS= 0 V, f = 1 MHz − 4475 5950 pF

C_oss Output Capacitance − 135 180 pF

C_rss Reverse Transfer Capacitance − 1.5 2.5 pF

Coss Output Capacitance VDS= 380 V, VGS= 0 V, f = 1 MHz − 75 − pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 480 V, VGS= 0 V − 109 − pF Qg(tot) Total Gate Charge at 10 V V_DS= 380 V, I_D= 18.5 A, V_GS= 10 V

(Note 4) − 107 139 nC

Qgs Gate to Source Gate Charge − 25 − nC

Qgd Gate to Drain “Miller” Charge − 44 − nC

ESR Equivalent Series Resistance (G−S) f = 1 MHz − 0.87 − W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 380 V, ID= 18.5 A, V_GS= 10 V, R_G= 4.7W (Note 4)

− 34 78 ns

tr Turn-On Rise Time − 24 58 ns

td(off) Turn-Off Delay Time − 98 206 ns

t_f Turn-Off Fall Time − 5 20 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current − − 37 A

I_SM Maximum Pulsed Drain to Source Diode Forward Current − − 111 A

V_SD Drain to Source Diode Forward

Voltage V_GS= 0 V, I_SD= 18.5 A − − 1.2 V

t_rr Reverse Recovery Time V_GS= 0 V, I_SD= 18.5,

dIF/dt = 100 A/ms − 144 − ns

Q_rr Reverse Recovery Charge − 0.91 − mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain

Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

4 6 8 10 V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

V_GS, Gate to Source Voltage [V]

ID, Drain Current [A]

I_D, Drain Current [A]

RDS(ON)[W], Drain to Source On−Resistance

V_SD, Body Diode Forward Voltage [V]

Capacitances [pF] , Gate to Source Voltage [V]IS, Reverse Drain Current [A]

1

0.1 10 4 5 6 8 9

0 30 60 120 0.10.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1 10 100 200

10 100 1000 10000 100000 1 10 100

VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

*Notes:

1. 250 ms Pulse Test 2. T_C = 25°C

1 10 100 200

*Notes:

1. V_DS = 20 V 2. 250 ms Pulse Test

−55°C 25°C

150°C

7

0.08 90 0.10 0.12 0.14 0.16 0.18 0.20 0.22

*Note: T_C = 25°C VGS = 20 V V_GS = 10 V

*Notes:

1. VGS = 0 V 2. 250 ms Pulse Test 25°C

150°C

*Note:

1. V_GS = 0 V 2. f = 1 MHz

C_iss

C_oss Crss

V^DS = 120 V V^DS = 300 V V^DS = 480 V

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs.

Temperature

Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current vs. Case Temperature 0.85

0.90 0.95 1.00 1.05 1.10 1.15

T_J, Junction Temperature [°C]

BVDSS, [Normalized] Drain to Source Breakdown Voltage

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ, Junction Temperature [°C]

RDS(on), [Normalized] Drain to Source On−Resistance

V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

T_C, Case Temperature [°C]

ID, Drain Current [A]

EOSS, [mJ]

−100 −50 0 50 100 150 200 −100 −50 0 50 100 150 200

1 10 100 1000 25 50 75 100 125 150

0.1 1 10 100 300

0 10 20 30

*Notes:

1. VGS = 0 V 2. ID = 10 mA

*Notes:

1. V_GS = 10 V 2. I_D = 18.5 A

Operation in This Area is Limited by R_DS(on)

*Notes:

1. T_C = 25°C 2. T_J = 150°C 3. Single Pulse

10 ms 100 ms

1 ms 10 ms

DC

4 8 12 16 20

40

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10

t₁, Rectangular Pulse Duration [sec]

ZqJC(t), Thermal Response [°C/W]

0.001 0.1 1

0.01 0.1 0.2 0.05 0.02 0.5

Single Pulse

*Notes:

1. Z_qJC(t) = 0.35°C/W Max.

2. Duty Factor, D= t1/t2

3. TJM− TC= PDM* Z_qJC(t) t1

t₂ P_DM

1 0.01

Figure 13. Gate Charge Test Circuit & Waveform Qg

Qgd

Qgs

VGS

Charge VDS

V_GS

RL

DUT IG = Const.

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms R_L

VDS

V_GS

V_GS

R_G

DUT

V_DD

VDS

V_GS10%

90%

10%

90% 90%

ton toff

tr tf

td(on) td(off)

V_DD V_DS

R_G

V_GS DUT

L

I_D

t_p

V_DD

t_p Time

I_AS BV_DSS

I_D(t)

V_DS(t) E_AS+1

2LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+Gate Pulse Width

Gate Pulse Period

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

Q 5.34 5.46 5.58

S 5.34 5.46 5.58

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information