FCHD125N65S3R0 MOSFET – Power, N-Channel, SUPERFET

MOSFET – Power, N-Channel, SUPERFET ⁾ III, Easy Drive, 650 V, 24 A, 125 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Features

• ^{700 V @ T}

= 150 ° C

• ^{Typ. R}

= 105 m W

• Ultra Low Gate Charge (Typ. Q

= 46 nC)

• Low Effective Output Capacitance (Typ. C

= 439 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar

www.onsemi.com

D

S G

V_DSS R_DS(ON) MAX I_D MAX

650 V 125 mW @ 10 V 24 A

N-Channel MOSFET

FCHD125N65S3R0 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

FCHD125 N65S3R0 AYWWG MARKING DIAGRAM

TO−247AD CASE 340AL G D

S

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage DC ±30 V

AC (f > 1 Hz) ±30 V

I_D Drain Current Continuous (TC = 25°C) 24 A

Continuous (TC = 100°C) 15

I_DM Drain Current Pulsed (Note 1) 60 A

EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ

I_AS Avalanche Current (Note 2) 3.7 A

EAR Repetitive Avalanche Energy (Note 1) 1.81 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 181 W

Derate Above 25°C 1.45 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 3.7 A, R_G = 25W, starting T_J = 25°C.

3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.69

R_qJA Thermal Resistance, Junction to Ambient, Max. 40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Quantity

FCHD125N65S3R0−F155 FCHD125N65S3R0 TO−247AD

(Pb-Free) 30 Units / Tube

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 1 mA, Referenced to 25_C 0.68 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 1 mA

V_DS= 520 V, T_C= 125_C 1.35

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 0.59 mA 2.5 4.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 12 A 105 125 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 12 A 16 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 1 MHz 1940 pF

C_oss Output Capacitance 40 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 439 pF Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 62 pF

Qg(tot) Total Gate Charge at 10V V_DS= 400 V, I_D= 12 A, V_GS= 10 V

(Note 4) 46 nC

Qgs Gate to Source Gate Charge 12 nC

Qgd Gate to Drain “Miller” Charge 19 nC

ESR Equivalent Series Resistance f = 1 MHz 0.5 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 400 V, ID= 12 A, V_GS= 10 V, R_g= 4.7W (Note 4)

21 ns

tr Turn-On Rise Time 19 ns

td(off) Turn-Off Delay Time 48 ns

tf Turn-Off Fall Time 4.6 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 24 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 60 A

V_SD Source to Drain Diode Forward

Voltage V_GS= 0 V, I_SD= 12 A 1.2 V

t_rr Reverse Recovery Time V_DD= 400 V, I_SD= 12 A,

dIF/dt = 100 A/ms 339 ns

Q_rr Reverse Recovery Charge 5.7 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

0.10.1 1 10 100

ID, Drain Current [A]

VDS, Drain−Source Voltage [V]

1 10

V_GS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

*Notes:

1. 250 ms Pulse Test 2. TC = 255C

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain

Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

0.0010.0 0.01 0.1 1 10 100

*Notes:

1. V_GS = 0 V 2. 250 ms Pulse Test

150^oC

IS, Reverse Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

25^oC

−55^oC

0.5 1.0 1.5

100 1000 10000 100000

C_oss C_iss

*Note: 4

6 8 10

VDS = 400 V VDS = 130 V

*Note: ID = 12 A

−Source Voltage [V]

13 10 100

ID, Drain Current [A]

VGS, Gate−Source Voltage [V]

6 9

*Notes:

1. VDS = 20 V 2. 250 ms Pulse Test

1505C

255C

−555C

0.00 0.1 0.2 0.3

RDS(ON), Drain−Source On−Resistance [W]

ID, Drain Current [A]

10 20 30 40 50

*Note: TC = 255C

V_GS = 10 V

VGS = 20 V

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variant vs. Temperature

Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current vs. Case Temperature

0.8 −50 0.9 1.0 1.1 1.2

*Notes:

1. V_GS = 0 V 2. I_D = 10 mA

BVDSS, [Normalized] Drain−Source Breakdown Voltage

TJ, Junction Temperature [^oC]

0.0 −50 0.5 1.0 1.5 2.0 2.5

*Notes:

1. V_GS = 10 V 2. I_D = 12 A

RDS(on), [Normalized] Drain−Source On−Resistance

TJ, Junction Temperature [^oC]

0 50 100 150 0 50 100 150

025 5 10 15 20 25

ID, Drain Current [A]

TC, Case Temperature [^oC]

50 100 150 200 250

2 4 6 8 10

EOSS [mJ]

0.011 0.1 1 10 100

10ms 30ms 100ms 1ms

ID, Drain Current [A]

VDS, Drain−Source Voltage [V]

Operation in This Area is Limited by R_DS(on)

*Notes:

1. TC = 25^oC 2. TJ = 150^o

DC

10 100 1000

C 3. Single Pulse

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10

0.001 0.01 0.1 1 2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

NOTES:

Z_qJC(t) = r(t) x R_qJC R_qJC = 0.69^oC/W Duty Cycle, D = t₁ / t₂ Peak T_J = P_DM x Z_qJC(t) + T_C

P_DM

t₁ t₂

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

Q_g Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

DUT

L

V_DD R_G

I_SD

V_SD +

−

V_GS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

I_SD (DUT)

V_DS

(DUT) V_SD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

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