MOSFET – N-Channel, SUPERFET) II, Easy‐Drive 600 V, 77 A, 41 m

SUPERFET ⁾ II, Easy‐Drive

600 V, 77 A, 41 mW

FCH041N60E

Description

SuperFET II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

Features

• 650 V @ T

= 150°C

• ^{Typ. R}

= 36 mW

• Ultra Low Gate Charge (Typ. Q

= 285 nC)

• Low Effective Output Capacitance (Typ. C

= 735 pF)

• 100% Avalanche Tested

• An Integrated Gate Resistor

• This Device is Pb−Free and is RoHS Compliant

• LCD/LED/PDP TV Lighting

• Solar Inverter

• AC−DC Power Supply

TO−247 CASE 340CK www.onsemi.com

D

S G

V_DSS R_DS(ON) MAX I_D MAX

600 V 41 mW 77 A

N-Channel MOSFET

G D S

MARKING DIAGRAM

$Y&Z&3&K FCH 041N60E

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 600 V

V_GSS Gate to Source Voltage DC ±20 V

AC (f > 1 Hz) ±30

I_D Drain Current Continuous (TC = 25°C) 77 A

Continuous (TC = 100°C) 48.7

I_DM Drain Current Pulsed (Note 1) 231 A

EAS Single Pulsed Avalanche Energy (Note 2) 2025 mJ

I_AS Avalanche Current (Note 1) 15 A

EAR Repetitive Avalanche Energy (Note 1) 5.92 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 592 W

Derate Above 25°C 4.74 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 15 A, R_G = 25W, starting TJ = 25°C.

3. ISD ≤ 39 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.21 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FCH041N60E FCH041N60E TO−247 Tube N/A N/A 30 Units

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 10 mA, T_J= 25_C 600 − − V V_GS= 0 V, I_D= 10 mA, T_J= 150_C 650 − − V DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 10 mA, Referenced to 25_C − 0.67 − V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 600 V, V_GS= 0 V − − 1 mA

V_DS= 480 V, V_GS= 0 V, T_C= 125_C − 9.7 −

I_GSS Gate to Body Leakage Current V_GS=±20 V, V_DS= 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage VGS= VDS, ID= 250mA 2.5 − 3.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 39 A − 36 41 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 39 A − 71 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 100 V, V_GS= 0 V, f = 1 MHz − 10300 13700 pF

C_oss Output Capacitance − 355 475 pF

C_rss Reverse Transfer Capacitance − 4 6 pF

Coss Output Capacitance VDS= 380 V, VGS= 0 V, f = 1 MHz − 187 − pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 480 V, VGS= 0 V − 735 − pF Qg(tot) Total Gate Charge at 10 V V_DS= 380 V, I_D= 39 A, V_GS= 10 V

(Note 4) − 285 380 nC

Qgs Gate to Source Gate Charge − 45 − nC

Qgd Gate to Drain “Miller” Charge − 105 − nC

ESR Equivalent Series Resistance f = 1 MHz − 1.2 − W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 380 V, ID= 39 A, V_GS= 10 V, R_G= 4.7W (Note 4)

− 50 110 ns

tr Turn-On Rise Time − 50 110 ns

td(off) Turn-Off Delay Time − 320 650 ns

t_f Turn-Off Fall Time − 85 180 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current − − 77 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current − − 231 A

V_SD Source to Drain Diode Forward

Voltage V_GS= 0 V, I_SD= 39 A − − 1.2 V

t_rr Reverse Recovery Time V_GS= 0 V, I_SD= 39 A,

dIF/dt = 100 A/ms − 590 − ns

Q_rr Reverse Recovery Charge − 18 − mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature.

TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10.1

10 100 300

*Notes:

1. 250 ms Pulse Test 2. TC = 25°C VGS = 15.0 V

10.0 V 8.0 V 6.0 V 5.5 V 5.0 V 4.5 V

1 10 20 0.12

1 10 100 300 *Notes:

1. V_DS = 10 V 2. 250 ms Pulse Test

150°C

25°C

−55°C

3 4 55 6

0.020 0.03 0.04 0.05 0.06

50 100 150 200 10.2

10 100 500

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 150°C

25°C

*Notes:

1. V_GS = 0 V 2. 250 ms Pulse Test

100 1000 10000 100000

*Notes:

1. V_GS = 0 V 2. f = 1 MHz

Capacitances [pF]

4 6 8 10 V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

V_GS, Gate to Source Voltage [V]

ID, Drain Current [A]

VGS= 10 V

V_GS= 20 V

*Note: TC = 25°C

ID, Drain Current [A]

RDS(ON) [W], Drain to Source On−Resistance

VSD, Body Diode Forward Voltage [V]

IS, Reverse Drain Current [A]

V_DS= 120V V_DS= 300V V_DS= 480V

oltage [V]

C_iss

Coss

Crss

TYPICAL CHARACTERISTICS

Figure 7. Breakdown Voltage Variation

vs. Temperature Figure 8. On-Resistance Variation vs. Temperature

Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current vs. Case Temperature 0.8−100

0.9 1.0 1.1 1.2

*Notes:

1. V_GS = 0 V 2. I_D = 10 mA

−50 0 50 100 150 200 0.0−100

0.5 1.0 1.5 2.0 2.5 3.0

−50 0 50 100 150 200

*Notes:

1. VGS = 10 V 2. ID = 39 A

025 20 40 60 80

50 75 100 125 150

10 20 30 40 45 0.1 1 10 100 500

10 100 1 ms 10 ms Operation in This Area is Limited by RDS(on)

DC

ms ms

*Notes:

1. T_C = 25°C 2. T_J = 150°C 3. Single Pulse

T_J, Junction Temperature [°C]

BVDSS, [Normalized] Drain to Source Breakdown Voltage

T_J, Junction Temperature [°C]

RDS(on), [Normalized] Drain to Source On−Resistance

V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

T_C, Case Temperature [°C]

ID, Drain Current [A]

Eoss, [mJ]

0.1 1 10 100 1000

TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Response Curve 0.001

0.01 0.1 0.5

t1, Rectangular Pulse Duration [s]

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰

ZqJC(t), Thermal Response [°C/W]

0.5 0.2 0.1 0.050.02 0.01

Single Pulse

PDM

t₁ t₂

*Notes:

1. Z_qJC(t) = 0.21°C/W Max.

2. Duty Factor, D = t1/t2

3. T_JM − T_C = P_DM * Z_qJC(t)

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

Q_g

Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

V_DD R_G

I_SD

V_DS +

−

V_GS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

I_SD (DUT)

V_DS

(DUT) V_SD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

Q 5.34 5.46 5.58

S 5.34 5.46 5.58

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information