FCD260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive

650 V, 12 A, 260 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

Features

• ^{700 V @ T}

= 150 ° C

• Typ. R

= 222 mW

• Ultra Low Gate Charge (Typ. Q

= 24 nC)

• Low Effective Output Capacitance (Typ. C

= 248 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

• Lighting / Charger / Adapter

D−PAK CASE 369AS www.onsemi.com

G S

D

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FCD260N65S3 = Specific Device Code

$Y&Z&3&K FCD 260N65S3 MARKING DIAGRAM

D

S G

POWER MOSFET

V_DSS R_DS(ON) MAX I_D MAX

650 V 260 mW @ 10 V 12 A

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage DC ±30 V

AC (f > 1 Hz) ±30 V

I_D Drain Current Continuous (TC = 25°C) 12 A

Continuous (TC = 100°C) 7.6

I_DM Drain Current Pulsed (Note 1) 30 A

EAS Single Pulsed Avalanche Energy (Note 2) 57 mJ

I_AS Avalanche Current (Note 1) 2.3 A

EAR Repetitive Avalanche Energy (Note 1) 0.9 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 90 W

Derate Above 25°C 0.72 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 2.3 A, R_G = 25W, starting T_J = 25°C.

3. ISD ≤ 6 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 1.39 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 4. Device on 1 in² pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Reel Size Tape Width Shipping^†

FCD260N65S3 FCD260N65S3 D−PAK 330 mm 16 mm 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 1 mA, Referenced to 25_C 0.66 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 1 mA

V_DS= 520 V, T_C= 125_C 0.77

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 0.29 mA 2.5 4.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 6 A 222 260 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 6 A 7.4 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 1 MHz 1010 pF

C_oss Output Capacitance 25 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 248 pF Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 33 pF

Qg(tot) Total Gate Charge at 10 V V_DS= 400 V, I_D= 6 A, V_GS= 10 V

(Note 5) 24 nC

Qgs Gate to Source Gate Charge 6.1 nC

Qgd Gate to Drain “Miller” Charge 9.7 nC

ESR Equivalent Series Resistance f = 1 MHz 8.7 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 400 V, ID= 6 A, V_GS= 10 V, R_g= 4.7W (Note 5)

18 ns

tr Turn-On Rise Time 18 ns

td(off) Turn-Off Delay Time 49 ns

tf Turn-Off Fall Time 12 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 12 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 30 A

V_SD Source to Drain Diode Forward Voltage V_GS= 0 V, I_SD= 6 A 1.2 V

t_rr Reverse Recovery Time VDD= 400 V, ISD= 6 A,

dI_F/dt = 100 A/ms 251 ns

Q_rr Reverse Recovery Charge 3.4 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

6 8

10 I_D = 6 A

VDS = 130 V

VDS = 400 V C_iss

VGS = 0 V 250 ms Pulse Test

25°C 150°C

−55°C 0.0

0.2 0.4 0.6

0.8 T_C = 25°C

V_GS = 10 V

VGS = 20 V

V_DS = 20 V 250 ms Pulse Test

25°C

−55°C 150°C

0.1 1 10 40

250 ms Pulse Test T_C = 25°C V_GS = 10.0 V

8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

100 1000 10000 100000

0.001 0.01 0.1 1 10 100 1 10 30

V_GS, Gate−Source Voltage (V)6 ID, Drain Current (A)

3

0

I_D, Drain Current (A) RDS(ON), Drain−Source On−Resistance (W)

40 V_SD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A)oltage (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, Drain−Source Voltage (V)

ID, Drain Current (A)

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature 20

9

10 30

0.2 1 10 20 4 5 7 8

0.0 0.5 1.0 1.5

TYPICAL PERFORMANCE CHARACTERISTICS

0 2 4 6

0 5 10 15

TC = 25°C T_J = 150°C Single Pulse Operation in this Area is Limited by RDS(on)

DC

100 ms 1 ms

30 ms

10 ms

V_GS = 10 V I_D = 6 A VGS = 0 V

ID = 10 mA

V_DS, Drain to Source Voltage (V) EOSS, (mJ)

130 260 520 650

0 390

1 10 100 1000

0.01 0.1 10 100

V_DS, Drain−Source Voltage (V) 25 ID, Drain Current (A)

T_C, Case Temperature (5C) ID, Drain Current (A)

50 75 100 125 150

0.8 −50 0.9 1.0 1.1 1.2

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On−Resistance Variation vs. Temperature

T_J, Junction Temperature (5C) BVDSS, Drain−Source Breakdown Voltage (Normalized)

0 50 100 150

T_J, Junction Temperature (5C) RDS(on), Drain−Source On−Resistance (Normalized)

−50 0 50 100 150

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TYPICAL PERFORMANCE CHARACTERISTICS

Z_qJC(t) = r(t) x R_qJC R_qJC = 1.39°C/W

Peak TJ = PDM x Z_qJC(t) + TC

Duty Cycle, D = t1 / t2

D = 0.5 0.2 0.1 0.05 0.02 0.01

DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

PDM

t₁ t₂

t, Rectangular Pulse Duration (sec) r(t), Normalized Effective Transient Thermal Resistance

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹

0.001 0.01 0.1 1 2

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

td(on) td(off)

Q_g Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

DPAK3 (TO−252 3 LD) CASE 369AS

ISSUE A

DATE 28 SEP 2022

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

XXXXXX XXXXXX AYWWZZ

98AON13810G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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