FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive

MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive

650 V, 19 A, 165 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation.

Features

• 700 V @ T

= 150°C

• ^{Typ. R}

= 140 mW

• Ultra Low Gate Charge (Typ. Q

= 39 nC)

• Low Effective Output Capacitance (Typ. C

= 341 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

• Lighting / Charger / Adapter

www.onsemi.com

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

MARKING DIAGRAM V_DSS R_DS(ON) MAX I_D MAX

650 V 165 mW @ 10 V 19 A

POWER MOSFET D

S G

TO−220 CASE 340AT GD

S

$Y&Z&3&K FCP 165N65S3

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage − DC ±30 V

− AC (f > 1 Hz) ±30

I_D Drain Current − Continuous (TC = 25°C) 19 A

− Continuous (TC = 100°C) 12.3

I_DM Drain Current − Pulsed (Note 1) 47.5 A

EAS Single Pulsed Avalanche Energy (Note 2) 87 mJ

I_AS Avalanche Current (Note 2) 2.7 A

EAR Repetitive Avalanche Energy (Note 1) 1.54 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 154 W

− Derate Above 25°C 1.23 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I_AS = 2.7 A, R_G = 25 W, starting TJ = 25°C.

3. ISD ≤ 9.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.81 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FCP165N65S3 FCP165N65S3 TO−220 Tube N/A N/A 50 Units

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS / DTJ Breakdown Voltage Temperature

Coefficient I_D= 1 mA, Referenced to 25_C 0.64 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 1 mA

V_DS= 520 V, T_C= 125_C 0.85

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 0.44 mA 2.5 4.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 9.5 A 140 165 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 9.5 A 12 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 1 MHz 1500 pF

C_oss Output Capacitance 35 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 341 pF Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 49 pF

Qg(tot) Total Gate Charge at 10 V V_DS= 400 V, I_D= 9.5 A, V_GS= 10 V

(Note 4) 39 nC

Qgs Gate to Source Gate Charge 11 nC

Qgd Gate to Drain “Miller” Charge 16 nC

ESR Equivalent Series Resistance f = 1 MHz 4.6 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 400 V, ID= 9.5 A, VGS= 10 V, R_g= 4.7W

(Note 4)

21 ns

tr Turn-On Rise Time 22 ns

td(off) Turn-Off Delay Time 53 ns

tf Turn-Off Fall Time 13 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 19 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 47.5 A

V_SD Source to Drain Diode Forward Voltage V_GS= 0 V, I_SD = 9.5 A 1.2 V t_rr Reverse Recovery Time VDD= 400 V, ISD = 9.5 A,

dI_F/dt = 100 A/ms 339 ns

Q_rr Reverse Recovery Charge 5.8 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

1 4 10

V_GS, Gate−Source Voltage (V) ID, Drain Current (A)

3

0 0.0 1.0 1.5

6 8 10 I_D, Drain Current (A)

RDS(ON), Drain−Source On−Resistance (W)

40 V_SD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A) oltage (V)

0.2 1 10

1 10

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, Drain−Source Voltage (V) 20

ID, Drain Current (A)

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature 20

100 1000 10000 100000

0.5

50 50

5

10 30 50

250 ms Pulse Test T_C = 25°C V_GS = 10.0 V

8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

VDS = 20 V 250 ms Pulse Test

25°C

−55°C 150°C

7

6 8 9

0.0 0.2 0.4

0.6 T_C = 25°C

V_GS = 10 V

V_GS = 20 V

1E−3 0.01 0.1 1 10

100 VGS = 0 V 250 ms Pulse Test

25°C 150°C

−55°C

Ciss

ID = 9.5 A

VDS = 130 V

V_DS = 400 V

TYPICAL PERFORMANCE CHARACTERISTICS

EOSS, (mJ)

1 10 100 1000

0.01 0.1 10 100

V_DS, Drain−Source Voltage (V) 25 ID, Drain Current (A)

T_C, Case Temperature (5C) ID, Drain Current (A)

50 75 100 125 150

0.8 −50 0.9 1.0 1.1 1.2

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On−Resistance Variation vs. Temperature

T_J, Junction Temperature (5C) BVDSS, Drain−Source Breakdown Voltage (Normalized)

0 50 100 150

T_J, Junction Temperature (5C) RDS(on), Drain−Source On−Resistance (Normalized)

−50 0 50 100 150

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 1

V_GS = 0 V I_D = 10 mA

0.0 0.5 1.0 1.5 2.0 2.5

3.0 V_GS = 10 V I_D = 9.5 A

T_C = 25°C T_J = 150°C Single Pulse Operation in this Area is Limited by R_DS(on)

DC

100 ms 1 ms

30 ms

10 ms

0 5 10 15 20

I

2 4 6 8

TYPICAL PERFORMANCE CHARACTERISTICS

t, Rectangular Pulse Duration (sec) r(t), Normalized Effective Transient Thermal Resistance

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10

0.001 0.01 0.1 1 2

1

Z_qJC(t) = r(t) x R_qJC R_qJC = 0.81°C/W

Peak T_J = P_DM x Z_qJC(t) + T_C Duty Cycle, D = t₁ / t₂ D = 0.5

0.2 0.1 0.05 0.02 0.01

DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

P_DM

t₁ t₂

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

td(on) td(off)

Q_g

Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G

VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

TO−220−3LD CASE 340AT

ISSUE A

DATE 03 OCT 2017 Scale 1:1