MOSFET – N-Channel, SUPERFET) II 600 V, 75 A, 43 m

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SUPERFET ⁾ II

600 V, 75 A, 43 mW

FCH043N60

Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features

• ^{Typ. R}

DS(on)

= 37 m W

• ^{600 V @ T}

J

= 150 ° C

• Ultra Low Gate Charge (Typ. Q

_g

= 163 nC)

• Low Effective Output Capacitance (Typ. C

_oss(eff.)

= 730 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Telecom / Sever Power Supplies

• Industrial Power Supplies

www.onsemi.com

N-CHANNEL MOSFET

MARKING DIAGRAM

V_DS R_DS(ON) MAX I_D MAX

600 V 43 mW @ 10 V 75 A

G

S D

DG S

G

TO−247−3LD CASE 340CK

$Y&Z&3&K FCH 043N60

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ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)

Symbol Parameter FCH043N60 Unit

VDSS Drain to Source Voltage 600 V

V_GSS Gate to Source Voltage − DC ±20 V

− AC (f > 1 Hz) ±30

I_D Drain Current: − Continuous (TC = 25°C) 75 A

− Continuous (TC = 100°C) 47.5

I_DM Drain Current: − Pulsed (Note 1) 225 A

EAS Single Pulsed Avalanche Energy (Note 2) 2025 mJ

I_AR Avalanche Current (Note 1) 15 A

EAR Repetitive Avalanche Energy (Note 1) 5.92 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 592 W

− Derate Above 25°C 4.74 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to + 150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I_AS = 15 A, R_G = 25 W, Starting TJ = 25 °C.

3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤380 V, Starting TJ = 25 °C.

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

FCH043N60 FCH043N60 TO−247 Tube N/A N/A 30 Units

THERMAL CHARACTERISTICS

Symbol Parameter FCH043N60 Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.21 °C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 40

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ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Unit

OFF CHARACTERISTICS

BV_DSS Drain to Source Breakdown Voltage ID = 10 mA, VGS = 0 V, TJ = 25°C 600 − − V ID = 10 mA, VGS = 0 V, TJ = 150°C 650 − −

DBVDSS

/DTJ

Breakdown Voltage Temperature

Coefficient ID = 10 mA, Referenced to 25°C − 0.67 − V/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 600 V, V_GS = 0 V − − 1 mA

V_DS = 480 V, V_GS = 0 V, T_C = 125 °C − 4.5 −

I_GSS Gate to Body Leakage Current V_GS = ±20 V, VDS = 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS = V_DS, I_D = 250 mA 2.5 − 3.5 V

R_DS(on) Static Drain to Source On Resistance V_GS = 10 V, I_D = 38 A − 37 43 mW

g_FS Forward Transconductance V_DS = 20 V, I_D = 38 A − 73 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS = 400 V, V_GS = 0 V, f = 1 MHz − 9194 12225 pF

C_oss Output Capacitance − 353 470 pF

C_rss Reverse Transfer Capacitance − 11 16 pF

C_oss(eff.) Effective Output Capacitance V_DS = 0 V to 480 V, V_GS = 0 V − 730 − pF Q_g(tot) Total Gate Charge at 10 V V_DS = 380 V, I_D = 38 A_,V_GS = 10 V

(Note 4) − 163 215 nC

Q_gs Gate to Source Gate Charge − 35 − nC

Q_gd Gate to Drain “Miller” Charge − 39 − nC

ESR Equivalent Series Resistance f = 1 MHz − 1.1 − W

SWITCHING CHARACTERISTICS

t_d(on) Turn-On Delay Time V_DD = 380 V, I_D = 38 A, VGS = 10 V, Rg = 4.7 W (Note 4)

− 46 102 ns

tr Turn−On Rise Time − 36 82 ns

td(off) Turn-Off Delay Time − 162 334 ns

tf Turn−Off Fall Time − 6 − ns

DRAIN-SOURCE DIODE CHARACTERISTICS

IS Maximum Continuous Source to Drain Diode Forward Current − − 75 A

ISM Maximum Pulsed Drain to Source Diode Forward Current − − 225 A

VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A − − 1.2 V

trr Reverse Recovery Time V_GS = 0 V, I_SD = 38 A,

dI_F/dt = 100 A/ms − 605 − ns

Qrr Reverse Recovery Charge − 16 − mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature.

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

0.01 0.1 1 10 20

0.1 1 10 100 1000

ID, Drain Current[A]

VDS, Drain−Source Voltage[V]

*Notes:

1. 250 ms Pulse Test 2. T_C = 25°C V_GS=10.0 V

8.0 V 6.0 V 5.0 V 4.5 V 4.0 V

2 3 4 5 6 7

1 10 100 1000

−55^oC 150^oC

25^oC ID, Drain Current[A]

VGS, Gate−Source Voltage[V]

*Notes:

1. V_DS = 20 V 2. 250 ms Pulse Test

0 45 90 135 180 225

0.03 0.04 0.05 0.06

VGS = 20V VGS = 10V

Drain−Source On−Resistance

ID, Drain Current [A]

150^oC

IS, Reverse Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

25^oC

*Notes:

1. V_GS = 0 V 2. 250 ms Pulse Test

*Note: T_C = 25°C

0.0 0.3 0.6 0.9 1.2 1.5

0.001 0.01 0.1 1 10 100 1000

100 1000 10000 100000

Coss

C_iss

*Notes:

1. V_GS = 0 V 4

6 8 10

VDS = 480V VDS = 300V

VDS = 120V

*Note: ID = 38A

−Source Voltage [V]

RDS(on) [W],

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TYPICAL CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On−Resistance Variation vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

−100 −50 0 50 100 150 200

0.8 0.9 1.0 1.1 1.2

BVDSS, [Normalized] Drain−Source Breakdown Voltage

TJ, Junction Temperature [^oC]

*Notes:

1. V_GS = 0 V 2. I_D = 10 mA

−100 −50 0 50 100 150

0.5 1.0 1.5 2.0 2.5

RDS(on), [Normalized] Drain−Source On−Resistance

TJ, Junction Temperature [^oC]

*Notes:

1. V_GS = 10 V 2. I_D = 38 mA

1 10 100 1000

0.01 0.1 1 10 100 1000

10 100 1ms10ms

VDS, Drain−Source Voltage [V]

DC Operation in This Area

is Limited by R_DS(on)

*Notes:

1. T_C = 25°C 2. T_J = 150°C 3. Single Pulse

ms ms

25 50 75 100 125 150

0 25 50 75

TC, Case Temperature [ ^oC]

9 18 27 36 45

Eoss, [mJ ]

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TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1

0.001 0.01 0.1 1

0.01 0.1 0.2

0.05 0.02 0.5

Single pulse

Rectangular Pulse Duration [sec]

t1

PDM

t2

*Notes:

1. Z_qJC(t) = 0.21°C/W Max.

2. Duty Factor, D = t₁/t₂ 3. T_JM − T_C = P_DM * Z_qJC(t) ZqJC(t), Thermal Response [°C/W]

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Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

Q_g Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

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DUT

L

V_DD R_G

I_SD

V_SD +

−

V_GS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

I_SD (DUT)

V_DS

(DUT) V_SD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

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TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

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MOSFET – N-Channel, SUPERFET) II 600 V, 75 A, 43 m

SUPERFET ) II

600 V, 75 A, 43 mW

FCH043N60

Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

• Typ. R

= 37 m W

• 600 V @ T

= 150 ° C

• Ultra Low Gate Charge (Typ. Q

= 163 nC)

• Low Effective Output Capacitance (Typ. C

= 730 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Telecom / Sever Power Supplies

• Industrial Power Supplies

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

SUPERFET ⁾ II

• ^{Typ. R}

• ^{600 V @ T}