MOSFET – N-Channel, SUPERFET II, FRFET

© Semiconductor Components Industries, LLC, 2014

October, 2020 − Rev. 4 1 Publication Order Number:

FCH190N65F/D

SUPERFET II, FRFET

650 V, 20.6 A, 190 mW

FCH190N65F

Description

SUPERFET

II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET

MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Features

• ^{700 V @ T}

= 150°C

• ^{Typ. R}

= 168 m (Typ.)

• Ultra Low Gate Charge (Typ. Q

= 60 nC)

• Low Effective Output Capacitance (Typ. C

= 304 pF)

• 100% Avalanche Tested

• This Device is Pb−Free and is RoHS Compliant

• LCD / LED / PDP TV

• Solar Inverter

• Telecom, Server Power Supplies

• AC−DC Power Supply

www.onsemi.com

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION N-CHANNEL MOSFET

MARKING DIAGRAM

V_DS R_DS(ON) MAX I_D MAX

650 V 190 m @ 10 V 20.6 A

DG S

G

TO−247−3LD CASE 340CH

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FCH190N65F = Specific Device Code

$Y&Z&3&K FCH 190N65F G

S D

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)

Symbol Parameter FCH190N65F−F155 Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage −DC ±20 V

−AC (f > 1 Hz) ±30

I_D Drain Current −Continuous (TC = 25°C) 20.6 A

−Continuous (TC = 100°C) 13.1

I_DM Drain Current −Pulsed (Note 1) 61.8 A

EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ

I_AR Avalanche Current (Note 1) 4.0 A

EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 50

PD Power Dissipation (T_C = 25°C) 208 W

−Derate Above 25°C 1.67 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to + 150 °C

T_L Maximum Lead Temperature for Soldering, ⅛ from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. I_AS = 4 A, R_G = 25 , Starting T_J = 25°C

3. ISD ≤ 10 A, di/dt ≤ 200 A/s, VDD ≤380 V, Starting TJ = 25 °C.

THERMAL CHARACTERISTICS

Symbol Parameter FCH190N65F−F155 Unit

R_JC Thermal Resistance, Junction to Case, Max. 0.6 °C/W

R_JA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCH190N65F−F155 FCH190N65F TO−247−3LD Tube N/A N/A 30 Units

www.onsemi.com 3

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Unit

OFF CHARACTERISTICS

BV_DSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − −

BVDSS/ TJ

Breakdown Voltage Temperature

Coefficient ID = 10 mA, Referenced to 25°C − 0.72 − V/°C

IDSS Zero Gate Voltage Drain Current V_DS = 650 V, V_GS = 0 V − − 10 A

V_DS = 520 V, V_GS = 0 V, T_C = 125°C − 60 −

I_GSS Gate to Body Leakage Current V_GS = ±20 V, VDS = 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS = V_DS, I_D = 2 mA 3 − 5 V

R_DS(on) Static Drain to Source On Resistance V_GS = 10 V, I_D = 10 A − 168 190 m

g_FS Forward Transconductance V_DS = 20 V, I_D = 10 A − 18 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS = 100 V, V_GS = 0 V,

f = 1 MHz − 2425 3225 pF

C_oss Output Capacitance − 78 104 pF

C_rss Reverse Transfer Capacitance − 0.68 − pF

C_oss Output Capacitance V_DS = 380 V, V_GS = 0 V, f = 1 MHz − 44 − pF

C_oss(eff.) Effective Output Capacitance V_DS = 0 V to 400 V, V_GS = 0 V − 304 − pF Q_g(tot) Total Gate Charge at 10 V V_DD = 380 V, I_D = 10 A_,

V_GS = 10 V (Note 4)

− 60 78 nC

Q_gs Gate to Source Gate Charge − 12 − nC

Q_gd Gate to Drain “Miller”Charge − 25 − nC

ESR Equivalent Series Resistance f = 1 MHz − 0.6 −

SWITCHING CHARACTERISTICS

t_d(on) Turn-On Delay Time V_DD = 380 V, I_D = 10 A, VGS = 10 V, RG = 4.7 (Note 4)

− 25 60 ns

t_r Turn-On Rise Time − 11 32 ns

t_d(off) Turn-Off Delay Time − 62 134 ns

t_f Turn-Off Fall Time − 4.2 18 ns

DRAIN-SOURCE DIODE CHARACTERISTICS

IS Maximum Continuous Drain to Source Diode Forward Current − − 20.6 A

ISM Maximum Pulsed Drain to Source Diode Forward Current − − 61.8 A

VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A − − 1.2 V

trr Reverse Recovery Time V_GS = 0 V, I_SD = 10 A,

dI_F/dt = 100 A/s − 105 − ns

Qrr Reverse Recovery Charge − 515 − nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature V_DS, Drain−Source Voltage (V)

ID, Drain Current (A)

3 4 5 6 7 8

V_GS, Gate−Source Voltage (V) ID, Drain Current (A)

I_D, Drain Current (A) RDS(ON), Drain−Source On−Resistance ()

V_SD, Body Diode Forward Voltage (V) IS, Reverse Drain Current (A)

Capacitance (pF) , Gate−Source Voltage (V)

0 14 28 42 56 70 0.0 0.3 0.6 1.2 1.5

10 100 1000 10000 50000

4 6 8 10 0.001

0.01 0.1 1 10 100

0.9 1

10 100

0.3 1 10

V_GS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

*Notes:

1. 250 s Pulse Test 2. TC = 25°C

0.1 1 10

100 *Notes:

1. V_DS = 20 V 2. 250 s Pulse Test

150°C

25°C

−55°C

0.1 0.2 0.3 0.4

*Note: T_C = 25°C V_GS = 10 V

V_GS = 20 V

25°C 150°C

*Notes:

1. V_GS = 0 V 2. 250 s Pulse Test

*Note:

1. VGS = 0 V

C_iss

Coss

C_rss

V_DS = 130 V V_DS = 325 V V_DS = 520 V

www.onsemi.com 5

TYPICAL PREFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On−Resistance Variation vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. E_OSS vs. Drain to Source Voltage T_J, Junction Temperature (°C)

BVDSS, (Normalized) Drain−Source Breakdown Voltage

T_J, Junction Temperature (°C) RDS(on), (Normalized) Drain−Source On−Resistance

V_DS, Drain−Source Voltage (V) ID, Drain Current (A)

T_C, Case Temperature (°C) ID, Drain Current (A)

VDS, Drain to Source Voltage (V) EOSS (J)

−100 −50 0 50 100 150 200 0.5

1.0 1.5 2.0 2.5

−100 −50 0 50 100 150 200

10 100 1000 25 50 75 100 125 150

0 140 280 420 560 700

1 0.8 0.9 1.0 1.1 1.2

*Notes:

1. VGS = 0 V 2. I_D = 10 mA

*Notes:

1. V_GS = 10 V 2. I_D = 10 A

1 10 100

0.1

*Notes:

1. TC = 25°C 2. TJ = 150°C 3. Single Pulse Operation in This Area is Limited by R_DS(on) DC

1 ms 100 s

10 s

0 5 10 15 20 25

2.4 4.8 7.2 9.6 12.0

0

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 12. Transient Thermal Response Curve 0.005

0.01 0.1 1

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1

t₁, Rectangular Pulse Duration (sec) ZJC(t), Thermal Response (°C/W)

0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse

PDM

t₁ t₂

*Notes:

1. Z_JC(t) = 0.6°C/W Max.

2. Duty Factor, D = t₁/t₂ 3. TJM − TC = PDM * Z_JC(t)

www.onsemi.com 7

Q_g

Q_gd Q_gs

V_GS

Charge V_DS

V_GS

R_L

I_G = Const. DUT

Figure 13. Transient Thermal Response Curve

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms R_L

V_DS V_GS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

V_DD VDS

R_G

VGS DUT

L

ID

t_p

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

TO−247−3LD CASE 340CH

ISSUE A

DATE 09 OCT 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

XXXXXXXXX AYWWG

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON13853G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247−3LD

© Semiconductor Components Industries, LLC, 2018 www.onsemi.com

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products