SUPERFET ) II, FRFET )
650 V, 76 A, 41 mW
FCH041N65EFLN4
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features
• 700 V @ T
J= 150 ° C
• Typ. R
DS(on)= 36 m W
• Ultra Low Gate Charge (Typ. Q
g= 229 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)= 631 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
• UPS / Solar
TO−247−4LD CASE 340CW
See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION www.onsemi.com
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FCH041N65EFLN4 = Specific Device Code MARKING DIAGRAM
VDSS RDS(ON) MAX ID MAX
650 V 41 mW @ 10 V 76 A
D G S2S1
$Y&Z&3&K FCH041 N65EFLN4
D
S2 G
POWER MOSFET S1
S1: Driver Source S2: Power Source
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol Parameter Value Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage − DC ±20 V
− AC (f > 1 Hz) ±30
ID Drain Current − Continuous (TC = 25°C) 76 A
− Continuous (TC = 100°C) 48.1
IDM Drain Current − Pulsed (Note 1) 228 A
EAS Single Pulsed Avalanche Energy (Note 2) 2025 mJ
IAS Avalanche Current (Note 2) 15 A
EAR Repetitive Avalanche Energy (Note 1) 5.95 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 50
PD Power Dissipation (TC = 25°C) 595 W
− Derate Above 25°C 4.76 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max. 0.21 _C/W
RqJA Thermal Resistance, Junction to Ambient, Max. 40
PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package
Packing
Method Reel Size Tape Width Quantity FCH041N65EFLN4 FCH041N65EFLN4 TO−247 L4
Narrow Lead Tube N/A N/A 30 Units
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage VGS= 0 V, ID= 10 mA, TJ= 25_C 650 − − V VGS= 0 V, ID= 10 mA, TJ= 150_C 700 − − V DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient ID= 10 mA, Referenced to 25_C − 0.72 − V/_C
IDSS Zero Gate Voltage Drain Current VDS= 650 V, VGS= 0 V − − 10 mA
VDS= 520 V, TC= 125_C − 145 −
IGSS Gate to Body Leakage Current VGS=±20 V, VDS= 0 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VGS= VDS, ID= 7.6 mA 3.0 − 5.0 V
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ON CHARACTERISTICS
gFS Forward Transconductance VDS= 20 V, ID= 38 A − 71.7 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS= 100 V, VGS= 0 V, f = 1 MHz − 9446 12560 pF
Coss Output Capacitance − 366 490 pF
Crss Reverse Transfer Capacitance − 35 − pF
Coss Output Capacitance VDS= 380 V, VGS= 0 V, f = 1 MHz − 197 − pF
Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V − 631 − pF Qg(tot) Total Gate Charge at 10 V VDS= 380 V, ID= 38 A, VGS= 10 V
(Note 4) − 229 298 nC
Qgs Gate to Source Gate Charge − 50 − nC
Qgd Gate to Drain “Miller” Charge − 90 − nC
ESR Equivalent Series Resistance f = 1 MHz − 0.6 − W
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD= 380 V, ID= 38 A, VGS= 10 V, Rg= 2W (Note 4)
− 55 120 ns
tr Turn-On Rise Time − 25 60 ns
td(off) Turn-Off Delay Time − 169 348 ns
tf Turn-Off Fall Time − 18 46 ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Maximum Continuous Drain to Source Diode Forward Current − − 76 A
ISM Maximum Pulsed Drain to Source Diode Forward Current − − 228 A
VSD Drain to Source Diode Forward Voltage VGS= 0 V, ISD= 38 A − − 1.2 V
trr Reverse Recovery Time VGS= 0 V, ISD= 38 A,
dIF/dt = 100 A/ms − 207 − ns
Qrr Reverse Recovery Charge − 1.5 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID, Drain Current (A)
0.1 1 10
1 10 500
100
1 10 200 100 VGS = 20.0 V
10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
250 ms Pulse Test TC = 25°C
VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
8
4 6 7
VGS, Gate−Source Voltage (V)
3 5
VDS = 20 V 250 ms Pulse Test
25°C
−55°C 150°C
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)Figure 3. On−Resistance Variation vs.Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On−Resistance Variation vs. Temperature
0 40 80 120 160 200 240
0.03 0.04 0.05 0.06
*Note: TC = 25oC VGS = 20V VGS = 10V
RDS(ON) [W], Drain−Source On−Resistance
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0
0.001 0.01 0.1 1 10 100 1000
*Notes:
1. VGS = 0V 2. 250ms Pulse Test 150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 50 100 150 200 250
0 2 4 6 8 10
VDS = 520V VDS = 325V VDS = 130V
*Note: ID = 38A VGS, Gate−Source Voltage [V]
Qg, Total Gate Charge [nC]
0.1 1 10 100 1000
1 10 100 1000 10000 100000
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V 2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain−Source Voltage [V]
−75 −50 −25 0 25 50 75 100 125 150 0.90
0.95 1.00 1.05 1.10 1.15
*Notes:
1. VGS = 0V 2. ID = 10mA BVDSS, [Normalized] Drain−Source Breakdown Voltage
TJ, Junction Temperature [oC] 0.0−75 −50 −25 0 25 50 75 100 125 150
0.5 1.0 1.5 2.0 2.5
*Notes:
1. VGS = 10V 2. ID = 38A RDS(on), [Normalized] Drain−Source On−Resistance
TJ, Junction Temperature [oC]
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature
Figure 11. EOSS vs. Drain to Source Voltage
Figure 12. Transient Thermal Response Curve
1 10 100 1000
0.01 0.1 1 10 100 500
100ms
*Notes:
1. TC = 25oC 2. TJ = 150oC 3. Single Pulse
10ms 1ms
ID, Drain Current [A]
VDS, Drain−Source Voltage [V]
Operation in This Area is Limited by RDS(on)
DC
25 50 75 100 125 150
0 20 40 60 80
ID, Drain Current [A]
TC, Case Temperature [oC]
0 100 200 300 400 500 600 700
0 10.4 20.8 31.2 41.6 52.0
EOSS, [mJ]
VDS, Drain to Source Voltage [V]
10−5 10−4 10−3 10−2 10−1 100 101
0.001 0.01 0.1 0.5
ZqJC(t),Thermal Response [o C/W]
0.01 0.1 0.2
0.05
0.02 *Notes:
1. ZqJC(t) = 0.21oC/W Max.
2. Duty Factor, D= t1/t2 3. TJM − TC = PDM * ZqJC(t) 0.5
Single pulse
t1, Rectangular Pulse Duration [sec]
t1
PDM
t2
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL
VDS VGS
VGS
RG
DUT
VDD
VDS
VGS10%
90%
10%
90% 90%
ton toff
tr tf
td(on) td(off)
Qg
Qgd Qgs
VGS
Charge VDS
VGS
RL
DUT IG = Const.
VDD VDS
RG
VGS DUT
L
ID
tp
VDD
tp Time
IAS
BVDSS
ID(t)
VDS(t) EAS+1
2@LIAS2
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT
L
VDD
RG
ISD
VDS +
−
VGS
Same Type as DUT
− dv/dt controlled by RG
− ISD controlled by pulse period Driver
VGS (Driver)
ISD
(DUT)
VDS
(DUT) VSD
IRM
10 V
di/dt
VDD IFM, Body Diode Forward Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop D+ Gate Pulse Width
Gate Pulse Period
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
TO−247 4−LEAD, THIN LEADS CASE 340CW
ISSUE A
DATE 16 SEP 2019
98AON80893G DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1 TO−247 4−LEAD, THIN LEADS
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