MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, Power88

MOSFET - Power, Single N-Channel, SUPERFET ⁾ V, FAST, Power88

600 V, 185 m W , 15 A

NTMT185N60S5H

Description

The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The Power88 package which is an ultra − slim SMD package offers excellent switching performance by providing kelvin source configuration and lower parasitic source inductance.

Features

• ^{650 V @ T}

= 150 ° C / Typ. R

= 148 m W

• 100% Avalanche Tested / MSL1 Qualified

• Kelvin Source Configuration and Low Parasitic Source Inductance

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Lighting / Charger/ Adapter / Industrial Power Supplies

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS 600 V

Gate−to−Source Voltage DC VGSS ±30 V

AC (f > 1 Hz) ±30 Continuous Drain Current T_C = 25°C I_D 15 A

TC = 100°C 9

Power Dissipation T_C = 25°C P_D 116 W

Pulsed Drain Current (Note 1) T_C = 25°C I_DM 53 A Pulsed Source Current

(Body Diode) (Note 1) TC = 25°C ISM 53 A Operating Junction and Storage Temperature

Range T_J, T_STG −55 to

+150 °C

Source Current (Body Diode) I_S 15 A

Single Pulse Avalanche

Energy I_L = 3.6 A,

R_G = 25 W E_AS 124 mJ

Avalanche Current I_AS 3.6 A

Repetitive Avalanche Energy (Note 1) EAR 1.16 mJ

Device Package Shipping ORDERING INFORMATION NTMT185N60S5H TDFN4 3000 / Tape &

Reel V_DSS R_DS(ON) MAX I_D MAX

600 V 185 mW @ 10 V 15 A

D

S1 G

S2

S1: Driver Source S2: Power Source

MARKING DIAGRAM

T185N 60S5H AWLYWW

T185N60S5H = Specific Device Code A = Assembly Location

WL = Wafer Lot

Y = Year

WW = Work Week

S2S2 G S1

TDFN4 8x8 2P CASE 520AB POWER MOSFET

†For information on tape and reel specifications, including part orientation and tape sizes, please

Thermal Resistance, Junction−to−Case, Max. R_qJC 1.08 °C/W

Thermal Resistance, Junction−to−Ambient, Max. R_qJA 45

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS V_GS= 0 V, I_D= 1 mA, T_J= 25_C 600 − − V Drain−to−Source Breakdown Voltage

Temperature Coefficient DV(BR)DSS/

DT_J I_D= 10 mA, Referenced to 25_C − 630 − mV/_C

Zero Gate Voltage Drain Current I_DSS V_GS= 0 V, V_DS = 600 V, T_J= 25_C − − 2 mA

Gate−to−Source Leakage Current I_GSS V_GS=±30 V, VDS= 0 V − − ±100 nA

ON CHARACTERISTICS

Drain−to−Source On Resistance R_DS(on) V_GS= 10 V, I_D= 7.5 A, T_J= 25_C − 148 185 mW Gate Threshold Voltage V_GS(th) V_GS= V_DS, I_D= 1.4 mA, T_J= 25_C 2.7 − 4.3 V

Forward Trans−conductance g_FS V_DS= 20 V, I_D= 7.5 A − 18 − S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C_ISS V_DS= 400 V, V_GS= 0 V, f = 250 kHz − 1350 − pF

Output Capacitance C_OSS − 25 −

Time Related Output Capacitance C_OSS(tr.) I_D = Constant, V_DS = 0 V to 400 V,

VGS = 0 V − 372 −

Energy Related Output Capacitance C_OSS(er.) V_DS= 0 V to 400 V, V_GS= 0 V − 42 −

Total Gate Charge Q_G(tot) VDD= 400 V, ID= 7.5 A, VGS= 10 V − 25 − nC

Gate−to−Source Charge Q_GS − 7 −

Gate−to−Drain Charge Q_GD − 8 −

Gate Resistance R_G f = 1 MHz − 0.9 − W

SWITCHING CHARACTERISTICS

Turn-On Delay Time t_d(on) V_GS= 0/10 V, V_DD= 400 V,

I_D= 7.5 A, R_G= 10W − 18 − ns

Rise Time t_r − 8 −

Turn-Off Delay Time t_d(off) − 52 −

Fall Time t_f − 4.3 −

SOURCE-TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage V_SD V_GS= 0 V, I_SD= 7.5 A, T_J= 25_C − − 1.2 V

Reverse Recovery Time t_RR V_GS = 0 V, I_SD= 7.5 A,

dI/dt = 100 A/ms, V_DD= 400 V − 213 − ns

Reverse Recovery Charge Q_RR − 2368 − nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V)

10 0 5

20

3 12

10

Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Diode Forward Voltage vs. Source Current

I_D, DRAIN CURRENT (A) V_SD, DIODE FORWARD VOLTAGE (V)

25 20

15 0 10

0.1 1.2

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) IS, SOURCE CURRENT (A)TE−TO−SOURCE VOLTAGE (V)

T_C = 150°C T_C = 25°C

T_C = −55°C

V_GS = 20 V

4 VGS = 10 V

30 100

1 0.3

30

6 10 0

5

8

V_DS = 20 V

0 0.2 0.6 1.0

15

10 4.5 V

10

20

0.4

CAPACITANCE (pF)

0

VGS = 10 V

ID = 7.5 A 25

15

5

7.0 V

5.0 V

4.0 V 6.0 V

5 6

100 T_C = 25°C

T_C = 25°C

0.1 0.2

VGS = 0 V

T_C = 150°C TC = 25°C

T_C = −55°C

0.4 0.8

V_GS = 0 V f = 250 kHz

C_ISS

C_OSS CRSS

VDS = 130 V

VDS = 400 V

4 10⁶

10⁵ 10⁴ 10³ 10² 10¹

C_ISS = C_GS + C_GD (C_DS = shorted) C_OSS = C_DS + C_GD

C_RSS = C_GD

Figure 7. Breakdown Voltage Variation vs.

Temperature

Figure 8. On−Resistance Variation vs.

Temperature

T_J, JUNCTION TEMPERATURE (°C) T_J, JUNCTION TEMPERATURE (°C)

0.8 0−75 175

0.5 2.0 1.5

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) T_C, CASE TEMPERATURE (°C)

0.11

125

100 150

75 50

0

Figure 11. E_OSS vs. Drain−to−Source Voltage V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

300 100

0 2 4 6

RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (Normalized)

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

EOSS (mJ)

V_GS = 10 V I_D = 7.5 A

10 ms

1 ms T_C = 25°C

T_J = 150°C Single Pulse 1.2

1.0

4

0

0 25

1.1 2.5

8 3.0

10

1.0

DC 100

10

1000

600

16

25

3

100 ms

1

200 400 500

100 1

10 ms Operation in this Area is

Limited by RDS(on)

12

−50 −25 50 75 100 125 150

175

−75 −50 −25 0 25 50 75 100 125 150 VGS = 0 V

ID = 10 mA

0.9 BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized)

5

TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Impedance t, RECTANGULAR PULSE DURATION (s)

0.1 0.0001

0.1

ZqJC(t), EFFECTIVE TRANSIENT THERMAL IMPEDANCE (°C/W)

1 0.01

0.00001 0.001

1

Single Pulse 0.01

Notes:

Z_qJC(t) = 1.08°C/W Max Duty Cycle, D = t₁/t₂ TJM = PDM x Z_qJC(t) + TC

D = 0.5 D = 0.2 D = 0.1 D = 0.05

D = 0.02 D = 0.01

Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms R_L

V_DS V_GS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off) Q_g

Q_gd Q_gs

VGS

Charge VDD

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G VGS DUT

L

ID

t_p

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_SD +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

I_SD (DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

CASE 520AB ISSUE O

DATE 24 APR 2019

XXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

XXXXXXXX XXXXXXXX AWLYWW

98AON73688G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TDFN4 8x8, 2P

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products