MOSFET - Power, N‐Channel, SUPERFET) III, FAST

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October, 2020 − Rev. 1 1 Publication Order Number:

NTP055N65S3H/D

N‐Channel, SUPERFET ⁾ III, FAST

650 V, 55 mW , 47 A

NTP055N65S3H

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• ^{700 V @ T}

J

= 150 ° C

• ^{Typ. R}

DS(on)

= 45 m W

• Ultra Low Gate Charge (Typ. Q

_g

= 96 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 880 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• EV Charger

• UPS / Solar

TO−220−3LD CASE 340AT

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION www.onsemi.com

G DS

V_DSS R_DS(ON) MAX I_D MAX

650 V 55 mW @ 10 V 47 A

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

NTP055N65S3H = Specific Device Code

$Y&Z&3&K NTP055 N65S3H D

S G

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ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise specified)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

V_GSS Gate to Source Voltage DC ±30 V

AC (f > 1 Hz) ±30 V

I_D Drain Current Continuous (TC = 25°C) 47 A

Continuous (TC = 100°C) 30

I_DM Drain Current Pulsed (Note 1) 132 A

EAS Single Pulsed Avalanche Energy (Note 2) 491 mJ

I_AS Avalanche Current (Note 2) 6.8 A

EAR Repetitive Avalanche Energy (Note 1) 3.05 mJ

dv/dt MOSFET dv/dt 120 V/ns

Peak Diode Recovery dv/dt (Note 3) 20

PD Power Dissipation (T_C = 25°C) 305 W

Derate Above 25°C 2.44 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 6.8 A, R_G = 25W, starting T_J = 25°C.

3. ISD ≤ 23.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.41 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Shipping

NTP055N65S3H NTP055N65S3H TO−220−3LD

(Pb-Free / Halogen Free) 50 Units / Tube

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www.onsemi.com 3

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 1 mA, T_J= 25_C 650 V

V_GS= 0 V, I_D= 1 mA, T_J= 150_C 700 V

DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 10 mA, Referenced to 25_C 0.63 V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 650 V, V_GS= 0 V 2 mA

V_DS= 520 V, T_C= 125_C 3.2

I_GSS Gate to Body Leakage Current V_GS=±30 V, V_DS= 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage V_GS= V_DS, I_D= 4.8 mA 2.4 4.0 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 23.5 A 45 55 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 23.5 A 52 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 400 V, V_GS= 0 V, f = 250 kHz 4305 pF

C_oss Output Capacitance 73 pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 880 pF Coss(er.) Energy Related Output Capacitance VDS= 0 V to 400 V, VGS= 0 V 127 pF

Qg(tot) Total Gate Charge at 10 V

VDS= 400 V, ID= 23.5 A, VGS= 10 V (Note 4)

96 nC

Qgs Gate to Source Gate Charge 23 nC

Qgd Gate to Drain “Miller” Charge 27 nC

ESR Equivalent Series Resistance f = 1 MHz 0.6 W

SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time

V_DD= 400 V, I_D= 23.5 A, VGS= 10 V, Rg= 4.7W

(Note 4)

30 ns

tr Turn-On Rise Time 16 ns

td(off) Turn-Off Delay Time 90 ns

tf Turn-Off Fall Time 2.8 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

I_S Maximum Continuous Source to Drain Diode Forward Current 47 A

I_SM Maximum Pulsed Source to Drain Diode Forward Current 132 A

V_SD Source to Drain Diode Forward

Voltage V_GS= 0 V, I_SD= 23.5 A 1.2 V

t_rr Reverse Recovery Time V_DD= 400 V, I_SD= 23.5 A, dI_F/dt = 100 A/ms

481 ns

Q_rr Reverse Recovery Charge 7.7 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

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TYPICAL CHARACTERISTICS

(T_C = 25°C unless otherwise noted)

6.0 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V) 00

40 80

4 1 3

Figure 3. On−Resistance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

I_D, DRAIN CURRENT (A) V_SD, BODY DIODE FORWARD VOLTAGE (V)

0 20

1.2 1000

ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)

CAPACITANCE (pF) TE−SOURCE VOLTAGE (V)

4.5 V

TJ = 25°C V_GS = 0 V

250 ms Pulse Test 1000

6 V_GS = 4.0 V

8

6

0 0.6

V_DD = 130 V

4 0

10 V

0.1 0.2 40

5

1

0.8 1.0

20 5.0 V

60

T_J = 150°C 0.4

I_D = 23.5 A 100

5

0.04 0.08

10

RDS(on), DRAIN−SOURCE ON−RESISTANCE

10 0.10

20

10 100

ID, DRAIN CURRENT (A)

TJ = −55°C T_J = 150°C

T_J = 25°C

T_C = 25°C

100 V_GS = 10 V

VGS = 20 V

TJ = −55°C

V_GS = 0 V f = 250 KHz

C_iss

Coss

Crss

V_DD = 400 V

10 15

60

7.0 V 5.5 V

250 ms Pulse Test TC = 25°C

250 ms Pulse Test V_DS = 20 V

2

100

C_iss = C_gs + C_gd (C_ds = shorted) C_oss = C_ds + C_gd

C_rss = C_gd

10¹ 10² 10³ 10⁴ 10⁵ 10⁶ 0.06

0.02

80

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TYPICAL CHARACTERISTICS

Figure 7. Breakdown Voltage Variation

vs. Temperature Figure 8. On−Resistance Variation

vs. Temperature

T_J, JUNCTION TEMPERATURE (°C) T_J, JUNCTION TEMPERATURE (°C)

175 25

0.8−75 0.9

0.5

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature V_DS, DRAIN−SOURCE VOLTAGE (V)

1000 0.1 10

125

100 150

50 75

025

Figure 11. E_OSS vs. Drain to Source Voltage V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

500 100

00 20

NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGEID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

EOSS (mJ)

VGS = 0 V ID = 10 mA

10 ms

DC 1 ms

10 ms T_C = 25°C

T_J = 150°C Single Pulse 1.2

75

−25 0

1.0 2.0 1.0

40

10 1000

100 ms

50

20

1 1.1

3.0

100

10

200 600

100

1

300

T_C, CASE TEMPERATURE (°C) 125

V_GS = 10 V I_D = 23.5 A

175 25

−75 −25 75 125

1.5

RDS(ON), NORMALIZED DRAIN− SOURCE ON−RESISTANCE

10

30

5

2.5

Operation in this Area is Limited by RDS(on)

400

150

0 50

−50 100 −50 0 50 100 150

15

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TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Impedance t, RECTANGULAR PULSE DURATION (sec)

0.1 0.0001

r(t), NORMALIZED EFFECTIVE TRAN- SIENT THERMAL RESISTANCE0.01 1

1 0.01

0.00001 0.001

0.1

Single Pulse Duty Cycle = 0.5

0.2 0.1 0.05 0.02

0.01

P_DM

t₁

Z_qJC(t) = r(t) x R_qJC R_qJC = 0.41°C/W

Peak T_J = P_DM x Z_qJC(t) + T_C Duty Cycle, D = t₁/t₂

t₂

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Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

VGS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

Q_g

Q_gd Q_gs

VGS

Charge V_DS

V_GS

R_L

DUT IG = Const.

V_DD VDS

R_G

VGS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2@LI_AS²

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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_SD +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+ Gate Pulse Width

Gate Pulse Period

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TO−220−3LD CASE 340AT

ISSUE A

DATE 03 OCT 2017 Scale 1:1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

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DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−220−3LD

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

MOSFET - Power, N‐Channel, SUPERFET) III, FAST

N‐Channel, SUPERFET ) III, FAST

650 V, 55 mW , 47 A

NTP055N65S3H

Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

• 700 V @ T

= 150 ° C

• Typ. R

= 45 m W

• Ultra Low Gate Charge (Typ. Q

= 96 nC)

• Low Effective Output Capacitance (Typ. C

= 880 pF)

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

• Telecom / Server Power Supplies

• Industrial Power Supplies

• EV Charger

• UPS / Solar

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

N‐Channel, SUPERFET ⁾ III, FAST

• ^{700 V @ T}

• ^{Typ. R}