MOSFET – N-Channel, SUPERFET II

© Semiconductor Components Industries, LLC, 2014

October, 2020 − Rev. 3 1 Publication Order Number:

FCH170N60/D

SUPERFET II

600 V, 22 A, 170 mW

FCH170N60

Description

SUPERFET

II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features

• ^{650 V @ T}

= 150 ° C

• ^{Typ. R}

= 150 m W

• Ultra Low Gate Charge (Typ. Q

= 42 nC)

• Low Effective Output Capacitance (Typ. C

= 190 pF)

• 100% Avalanche Tested

• This Device is Pb−Free and is RoHS Compliant

• Telecom / Server Power Supplies

• Industrial Power Supplies

• AC−DC Power Supply

TO−247 CASE 340CK

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION www.onsemi.com

D

S G

V_DSS R_DS(ON) MAX I_D MAX

600 V 170 mW 22 A

N-Channel MOSFET

G D S

MARKING DIAGRAM

$Y&Z&3&K FCH 170N60

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot Code

FCH170N60 = Specific Device Code

ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, Unless otherwise noted)

Symbol Parameter FCH170N60 Unit

VDSS Drain to Source Voltage 600 V

V_GSS Gate to Source Voltage −DC ±20 V

−AC (f > 1 Hz) ±30

I_D Drain Current −Continuous (TC = 25°C) 22 A

−Continuous (TC = 100°C) 14

I_DM Drain Current −Pulsed (Note 1) 66 A

EAS Single Pulsed Avalanche Energy (Note 2) 525 mJ

I_AR Avalanche Current (Note 1) 5 A

EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ

dv/dt MOSFET dv/dt (Note 3) 100 V/ns

Peak Diode Recovery dv/dt 20

PD Power Dissipation (T_C = 25°C) 227 W

−Derate Above 25°C 1.82 W/°C

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C

T_L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I_AS = 5 A, R_G = 25W, Starting T_J = 25°C.

3. ISD ≤ 11 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, Starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter FCH170N60 Unit

R_qJC Thermal Resistance, Junction to Case, Max. 0.55 _C/W

R_qJA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Reel Size Tape Width Quantity

FCH170N60 FCH170N60 TO−247 − − 30 Units

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ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage V_GS= 0 V, I_D= 10 mA, T_J= 25_C 600 − − V V_GS= 0 V, I_D= 10 mA, T_J= 150_C 650 − − V DBVDSS/DTJ Breakdown Voltage Temperature

Coefficient I_D= 10 mA, Referenced to 25_C − 0.67 − V/_C

I_DSS Zero Gate Voltage Drain Current V_DS= 600 V, V_GS= 0 V − − 1 mA

V_DS= 480 V, V_GS= 0 V, T_C= 125_C − 1.2 −

I_GSS Gate to Body Leakage Current V_GS=±20 V, V_DS= 0 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate Threshold Voltage VGS= VDS, ID= 250mA 2.5 − 3.5 V

R_DS(on) Static Drain to Source On Resistance V_GS= 10 V, I_D= 11 A − 150 170 mW

g_FS Forward Transconductance V_DS= 20 V, I_D= 11 A − 17 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS= 380 V, V_GS= 0 V, f = 1 MHz − 2150 2860 pF

C_oss Output Capacitance − 60 80 pF

C_rss Reverse Transfer Capacitance − 2.65 − pF

Coss(eff.) Effective Output Capacitance VDS= 0 V to 480 V, VGS= 0 V − 190 − pF Qg(tot) Total Gate Charge at 10 V V_DS= 380 V, I_D= 11 A, V_GS= 10 V

(Note 4) − 42 55 nC

Qgs Gate to Source Gate Charge − 9 − nC

Qgd Gate to Drain “Miller” Charge − 11 − nC

ESR Equivalent Series Resistance f = 1 MHz − 0.95 − W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD= 380 V, ID= 11A, V_GS= 10 V, R_G= 4.7W (Note 4)

− 21 50 ns

tr Turn-On Rise Time − 12 35 ns

td(off) Turn-Off Delay Time − 55 120 ns

t_f Turn-Off Fall Time − 3.8 18 ns

DRAIN−SOURCE- DIODE CHARACTERISTICS

I_S Maximum Continuous Drain to Source Diode Forward Current − − 22 A

I_SM Maximum Pulsed Drain to Source Diode Forward Current − − 66 A

V_SD Drain to Source Diode Forward

Voltage V_GS= 0 V, I_SD= 11 A − − 1.2 V

t_rr Reverse Recovery Time V_GS= 0 V, I_SD= 11 A,

dIF/dt = 100 A/ms − 346 − ns

Q_rr Reverse Recovery Charge − 6.2 − mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature.

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

V_GS, Gate−Source Voltage [V]

ID, Drain Current [A]

ID, Drain Current [A]

RDS(ON)[W], Drain to Source On−Resistance

VSD, Body Diode Forward Voltage [V]

Capacitances [pF] oltage [V]

0.3 1 10 20 2 3 6 7

0 28 42 70 0.0 0.3 0.6 1.2 1.5

10 100 1000 10000

4 5

10

1 100

0.9 IS, Reverse Drain Current [A]

4 6 8 10

14 56

20000 1 10

100 VGS = 10.0 V 8.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V

*Notes:

1. 250 ms Pulse Test 2. T_C = 25°C

−55°C 25°C 150°C

*Notes:

1. V_DS = 20 V 2. 250 ms Pulse Test

0.0 0.1 0.2 0.3 0.4

*Note: T_C = 25°C V_GS = 20 V

VGS = 10 V

*Notes:

1. VGS = 0 V 2. 250 ms Pulse Test 25°C

150°C

0.001 0.01 0.1 1 10 100

C_rss C_oss

Ciss

*Note:

1. V_GS = 0 V 2. f = 1 MHz

VDS = 480 V V^DS = 300 V V^DS = 120 V

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. E_OSS vs. Drain to Source Voltage T_J, Junction Temperature [°C]

BVDSS, [Normalized] Drain to Source Breakdown Voltage

TJ, Junction Temperature [°C]

RDS(on), [Normalized] Drain to Source On−Resistance

V_DS, Drain to Source Voltage [V]

ID, Drain Current [A]

T_C, Case Temperature [°C]

ID, Drain Current [A]

V_DS, Drain to Source Voltage [V]

EOSS, [mJ]

−100 −50 0 50 100 150 200 −100 −50 0 50 100 150 200

1 10 100 1000 25 50 75 100 125 150

0 100 200 300 400 600

0.8 0.9 1.0 1.1 1.2

*Notes:

1. V_GS = 0 V 2. I_D = 10 mA

0.5 1.0 1.5 2.0 2.5

0.5 1.0 1.5 2.0 2.5

*Notes:

1. V_GS = 10 V 2. I_D = 11 A

0.01 0.1 1 10 100 300

Operation in This Area is Limited by RDS(on)

*Notes:

1. T_C = 25°C 2. T_J = 150°C 3. Single Pulse

10 ms 100 ms

1 ms DC

0 5 10 15 20 25

0 2.4 4.8 7.2 9.6 12.0

500

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 12. Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹

t₁, Rectangular Pulse Duration [sec]

ZqJC(t), Thermal Response [°C/W]

0.001 0.01 0.1 1

10⁰ 0.01

0.10.2 0.05 0.02 0.5

Single Pulse *Notes:

1. Z_qJC(t) = 0.55°C/W Max.

2. Duty Factor, D= t1/t2

3. TJM− TC= PDM* Z_qJC(t) P_DM

t₂ t1

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Figure 13. Transient Thermal Response Curve Qg

Qgd

Qgs

V_GS

Charge VDS

V_GS

RL

DUT IG = Const.

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms RL

V_DS VGS

V_GS

RG

DUT

VDD

V_DS

V_GS10%

90%

10%

90% 90%

t_on t_off

t_r t_f

t_d(on) t_d(off)

VDD

VDS

R_G

V_GS DUT

L

ID

tp

V_DD

t_p Time

IAS

BV_DSS

I_D(t)

V_DS(t) E_AS+1

2LI_AS²

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT

L

VDD

RG

I_SD

V_DS +

−

VGS

Same Type as DUT

− dv/dt controlled by R_G

− I_SD controlled by pulse period Driver

V_GS (Driver)

ISD

(DUT)

V_DS

(DUT) V_SD

I_RM

10 V

di/dt

V_DD I_FM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop D+Gate Pulse Width

Gate Pulse Period

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58

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