MOSFET – N-Channel, POWERTRENCH) 150 V, 169 A, 6.3 m

POWERTRENCH ⁾

150 V, 169 A, 6.3 mW

FDBL86210-F085

Features

• ^{Typical r}

= 5 m at V

= 10 V, I

= 80 A

• Typical Q

= 70 nC at V

= 10 V, I

= 80 A

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and are RoHS Compliant

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)

Symbol Parameter Ratings Unit

VDSS Drain to Source Voltage 150 V

VGS Gate to Source Voltage ±20 V

I_D Drain Current − Continuous

(V_GS = 10), T_C = 25°C (Note 1) 169 A Pulsed Drain Current, T_C = 25°C See Figure 4 E_AS Single Pulse Avalanche Energy

(Note 2) 502 mJ

P_D Power Dissipation 500 W

Derate Above 25°C 3.3 W/°C

TJ, TSTG Operating and Storage Temperature −55 to +175 °C R_JC Thermal Resistance Junction to Case 0.3 °C/W R_JA Maximum Thermal Resistance

Junction to Ambient (Note 3) 43 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Current is limited by silicon.

2. Starting T_J = 25°C, L = 0.24 mH, IAS = 64 A, V_DD = 100 V during inductor charging and VDD = 0 V during time in avalanche.

3. R_JA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R_JC is guaranteed by design, while R_JA

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H−PSOF8L CASE 100CU MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FDBL86210 = Specific Device Code

$Y&Z&3&K FDBL 86210

N−Channel G

D

S

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BV_DSS Drain to Source Breakdown Voltage I_D = 250 A, VGS = 0 V 150 − − V

I_DSS Drain to Source Leakage Current V_DS = 150 V,

V_GS = 0 V T_J = 25°C − − 1 A

TJ = 175°C (Note 4) − − 1 mA

I_GSS Gate to Source Leakage Current V_GS = ±20 V − − ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 2.0 2.8 4.0 V

r_DS(on) Drain to Source On Resistance I_D = 80 A,

VGS = 10 V TJ = 25°C − 5 6.3 m

T_J = 175°C (Note 4) − 14 17.5 m

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz − 5805 − pF

C_oss Output Capacitance − 536 − pF

C_rss Reverse Transfer Capacitance − 16 − pF

Rg Gate Resistance f = 1 MHz − 2.2 −

Qg(ToT) Total Gate Charge at 10 V VGS = 0 to 10 V VDD = 75 V,

I_D = 80 A − 70 90 nC

Q_g(th) Threshold Gate Charge V_GS = 0 to 2 V − 10.5 13 nC

Q_gs Gate to Source Gate Charge VDD = 75 V, ID = 80 A − 32.5 − nC

Qgd Gate to Drain “Miller” Charge − 10 − nC

SWITCHING CHARACTERISTICS

t_on Turn−On Time V_DD = 75 V, I_D = 80 A,

VGS = 10 V, RGEN = 6 − − 80 ns

t_d(on) Turn−On Delay Time − 39 − ns

t_r Rise Time − 30 − ns

t_d(off) Turn−Off Delay Time − 70 − ns

tf Fall Time − 23 − ns

t_off Turn−Off Time − − 130 ns

DRAIN−SOURCE DIODE CHARACTERISTIC

V_SD Source to Drain Diode Voltage I_SD = 80 A, V_GS = 0 V − − 1.25 V

ISD = 40 A, VGS = 0 V − − 1.2 V

T_rr Reverse Recovery Time I_F = 80 A, dI_SD/dt = 100 A/s,

V_DD = 120 V − 108 125 ns

Qrr Reverse Recovery Charge − 323 467 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

TYPICAL CHARACTERISTICS

Figure 1. Normalized Power Dissipation vs. Case Temperature

Figure 2. Maximum Continuous Drain Current vs. Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

0

T_C, Case Temperature [°C]

Power Dissipation Multiplier

0.0 0.2 0.4 0.6 0.8 1.0 1.2

ID, Drain Current [A]

25 50 75 100 125 150 175 0

40 80 120 160

25 50 75 100 125 150 175

T_C, Case Temperature [°C]

200

ZJC, Normalized Thermal Impedance 0.01

0.1 1 2

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹

t, Rectangular Pulse Duration (s)

NOTES:

Duty factor: D = t1 / t2

Peak TJ = PDM ×Z_JA ×R_JA + TC PDM

t1 t2 DUTY CYCLE − DESCENDING ORDER

SINGLE PULSE

IDM, Peak Current [A] ₁₀₀ 1000 10000

VGS = 10 V

SINGLE PULSE

For temperatures above 25°C derate peak current as follows:

TC = 25°C

I+I2

ƪ ^Ǹ

ƫ

200

D = 0.50 0.20 0.10 0.05 0.02 0.01

TYPICAL CHARACTERISTICS

VGS = 0 V

T_J = 175°C

TJ = 25°C ID, Drain Current [A]

100

1 10

V_DS, Drain to Source Voltage [V]

10

1

0.1 1000

100 Operation in this

area may be limited by rDS(on)

SINGLE PULSE TJ = max rated T_C = 25°C

100 s

1 ms 10 ms 100 ms

V_DS, Drain to Source Voltage [V]

3 4 5

ID, Drain Current [A] ¹⁰⁰ 50

0 150 200 250

0 1 2

300 2

V_GS, Gate to Source Voltage [V]

3 4 5 6 7

Pulse duration = 80 s Duty cycle = 0.5% MAX VDD = 5 V

TJ = 25°C

TJ = 175°C

TJ = −55°C ID, Drain Current [A]

200

160

120

80

40

0

Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability

Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics

Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics IAS, Avalanche Current [A]

100

10

1 1000

0.001 1 10

t_AV, Time in Avalanche [ms]

100 Starting TJ = 25°C

Starting TJ = 150°C

NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515.

V_SD, Body Diode Forward Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2

IS, Reverse Drain Current [A]

400

100

10

1

0.1

VDS, Drain to Source Voltage [V]

3 4 5

ID, Drain Current [A] ¹⁰⁰ 50

0 150 200 250

0 1 2

0.01 0.1 1000

8

300

If R = 0

t_AV = (L)(I_AS) / (1.3 ×Rated BV_{DSS −}V_DD) If R ≠ 0

t_AV = (L/R)ln[(I_AS ×R) / (1.3 × Rated BV_DSS − V_DD) + 1]

10000

80 s Pulse Width Tj = 25°C

VGS 15 V Top 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom 5 V

80 s Pulse Width Tj = 175°C VGS

15 V Top 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom

5 V

TYPICAL CHARACTERISTICS

Figure 11. R_DSON vs. Gate Voltage Figure 12. Normalized R_DSON vs. Junction Temperature

Figure 13. Normalized Gate Threshold Voltage vs. Temperature

Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature

10

V_GS, Gate to Source Voltage [V]

4 6

rDS(on), Drain to Source On−Resistance [m]

30

0 10 20 40 50

8 10

Pulse duration = 80 s Duty cycle = 0.5% MAX

Normalized Drain to Source On−Resistance 2.5

2.0

1.5

1.0

0.5

0.0−80

T_J, Junction Temperature [°C]

−40 0 40 80 120 160 200

ID = 80 A VGS =10 V

−80

T_J, Junction Temperature [°C]

−40 0 40 80 120 160 200

Normalized Gate Threshold Voltage

1.5

1.2

0.9

0.6

0.3

0.0

IDV = 250 AGS = VDS

−80

T_J, Junction Temperature [°C]

−40 0 40 80 120 160 200

Normalized Drain to Source Breakdown Voltage 1.10

1.05

1.00

0.95

0.90

ID = 1 mA

1

0.1 10 100

Capacitance [pF]

0

100 1000 10000

Ciss

Coss

Crss

V_DD = 60 V ID = 80 A

0 20 40 60 80

VGS, Gate to Source Voltage [V]

10

4 8

0 6

2 Pulse duration = 80 s

Duty cycle = 0.5% MAX

TJ = 25°C

TJ = 175°C ID =80 A

VDD = 75 V

VDD = 90 V

VGS = 0 V f = 1 MHz 2

3.0

1 200

H−PSOF8L 11.68x9.80 CASE 100CU

ISSUE B

DATE 20 MAY 2022

A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code XXXX = Specific Device Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ

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