MOSFET - N‐Channel, POWERTRENCH) 40 V, 49 A, 2.2 m

POWERTRENCH ⁾

40 V, 49 A, 2.2 mW

FDMS8460

General Description

This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH

process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.

Features

• Max r

= 2.2 mW at V

= 10 V, I

= 25 A

• ^{Max r}

= 3.0 mW at V

= 4.5 V, I

= 21.7 A

• Advanced Package and Silicon combination for low r

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

• DC−DC Conversion

MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)

Symbol Parameter Value Unit

VDS Drain to Source Voltage 40 V

V_GS Gate to Source Voltage ±20 V

ID Drain Current:

− Continuous (Package limited) TC = 25°C

− Continuous (Silicon limited) T_C = 25°C

− Continuous T_A = 25°C (Note 1a)

− Pulsed

16749 16025

A

E_AS Single Pulse Avalanche Energy (Note 3) 864 mJ P_D Power Dissipation:

T_C = 25°C

T_A = 25°C (Note 1a) 104

2.5

W

T_J, T_STG Operating and Storage Junction Tempera-

ture Range −55 to

+150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

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See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION N-Channel MOSFET

MARKING DIAGRAM

$Y&Z&3&K FDMS 8460

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FDMS8460 = Specific Device Code D D D D S

S S G

D

D D D S

S S G

Power 56 (PQFN8) CASE 483AE

Pin 1

Top Bottom

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Quantity

FDMS8460 FDMS8460 Power 56 (PQFN8)

(Pb-Free / Halogen Free) 3000/Tape&Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJC Thermal Resistance, Junction to Case 1.2 °C/W

R_qJA Thermal Resistance, Junction to Ambient (Note 1a) 50

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

BV_DSS Drain to Source Breakdown Voltage I_D = 250mA, VGS = 0 V 40 V

DBVDSS

/DTJ

Breakdown Voltage Temperature

Coefficient I_D = 250mA, referenced to 25°C 32 mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 32 V, V_GS = 0 V 1 mA

I_GSS Gate to Source Leakage Current, Forward V_GS = ±20 V, V_DS = 0 V ±100 nA ON CHARACTERISTICS

V_GS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250mA 1.0 1.9 3.0 V

DVGS(th)

/DT_J Gate to Source Threshold Voltage

Temperature Coefficient ID = 250mA, referenced to 25°C −7.5 mV/°C

rDS(on) Static Drain to Source On Resistance V_GS = 10 V, I_D = 25 A 2.0 2.2 mW

V_GS = 4.5 V, I_D = 21.7 A 2.6 3.0

V_GS = 10 V, I_D = 25 A, T_J = 125°C 2.6 3.3

g_FS Forward Transconductance V_DS = 5 V, I_D = 25 A 137 S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS = 20 V, V_GS = 0 V, f = 1 MHz 5415 7205 pF

C_oss Output Capacitance 1470 1955 pF

C_rss Reverse Transfer Capacitance 170 250 pF

R_g Gate Resistance f = 1MHz 0.1 1.4 3.1 W

SWITCHING CHARACTERISTICS

t_d(on) Turn-On Delay Time V_DD = 20 V, I_D = 25 A, V_GS = 10 V,

R_GEN = 6 W 19 35 ns

t_r Rise Time 9 19 ns

t_d(off) Turn-Off Delay Time 48 78 ns

t_f Fall Time 7 14 ns

Q_g Total Gate Charge V_GS = 0 V to 10 V, V_DD = 20 V,

ID = 25 A 78 110 nC

VGS = 0 V to 4.5 V, VDD = 20 V,

I_D = 25 A 36 51 nC

Q_gs Gate to Source Charge V_DD = 20 V, I_D = 25 A 15 nC

Q_gd Gate to Drain “Miller” Charge 10 nC

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)(continued)

Symbol Parameter Test Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

V_SD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2

trr Reverse Recovery Time IF = 25 A, di/dt = 100 A/ms 53 85 ns

Qrr Reverse Recovery Charge 40 64 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R_qJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R_qCA is determined by the user’s board design.

NOTES:

a. 50 °C/W when mounted on a 1 in² pad of 2 oz copper.

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%.

3. Starting T_J = 25°C, L = 0.3 mH, IAS = 24 A, V_DD = 40 V, V_GS = 10 V

TYPICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

I D,DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

0 1 2 3

0 40 80 120 160

V_GS = 4.5V

V_GS = 3.5V PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX V_GS = 4V

V_GS = 3V V_GS = 10V

ms

0 40 80 120 160

1 2 3 4 5

V_GS=10V V_GS= 4V

V_GS = 3.5V V_GS = 3V

V_GS=4.5V

0.5

PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX

ms

TYPICAL CHARACTERISTICS

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

r DS(on)

,DRAIN TO SOURCE ON−RESISTANCE(mW)

I D, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

I S, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Qg, GATE CHARGE (nC)

VGS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pF)

V DS , DRAIN TO SOURCE VOLTAGE (V) T_J, JUNCTION TEMPERATURE (5C)

Figure 3. Normalized On Resistance vs. Junction Temperature

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On−Resistance vs. Gate to Source Voltage

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current

−75 −50 −25 0 25 50 75 100 125 150 0.6

0.8 1.0 1.2 1.4 1.6 1.8

ID = 25A VGS = 10V

2 4 6 8 10

0 2 4 6 8 10

ID= 25A

T_J= 25^oC TJ= 125^oC

PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX

ms

0 1 2 3 4 5

0 40 80 120 160

VDS= 5V

T_J = −55 T_J = 25^oC TJ= 150^oC

PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX

ms

oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1E−3 0.01 0.1 1 10 100

TJ = −55^oC T_J = 25^oC TJ= 150^oC

VGS= 0V 800

0 20 40 60 80

0 2 4 6 8 10

ID= 25A

VDD = 20V

VDD= 25V VDD = 15V

0.1 1 10

100 1000 10000

40 f = 1MHz

VGS = 0V

Crss Coss Ciss

30

TYPICAL CHARACTERISTICS

tAV , TIME IN AVALANCHE (ms) I AS

, AVALANCHE CURRENT (A) I D,DRAIN CURRENT (A)

Tc, CASE TEMPERATURE (oC)

I D, DRAIN CURRENT (A)

VDS , DRAIN to SOURCE VOLTAGE (V)

P(PK),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Figure 9. Unclamped Inductive

Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

Figure 13. Transient Thermal Response Curve

0.01 0.1 1 10 100 1000

1

10 _T

J= 25^oC

T_J= 125^oC 40

25 50 75 100 125 150

0 50 100 150 200

VGS= 4.5V

RsJC= 1.2^oC/W VGS= 10V

Limited by Package

0.01 0.1 1 10 100

0.01 0.1 1 10 100 400

DC 10s 1s 100ms 10ms 1ms

THIS AREA IS LIMITED BY r_DS(on)

SINGLE PULSE TJ= MAX RATED R_sJA= 125^oC/W TA= 25^oC

200 10⁻³ 10⁻² 10⁻¹ 1 10 100 1000

1 10 100 1000

SINGLE PULSE R_sJA= 125^oC/W T_A= 25^oC

0.5

V_GS = 10V

10⁻³ 10⁻² 10⁻¹ 1 10 100 1000

1E−3 0.01

0.1 1

SINGLE PULSE R_sJA = 125^oC/W DUTY CYCLE−DESCENDING ORDER

NORMALIZED THERMAL IMPEDANCE,ZsJA

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01 2

P_DM

t₁ t₂ NOTES:

DUTY FACTOR: D = t₁/t₂ PEAK T_J = P_DM x Z_sJA x R_sJA + T_A

PQFN8 5X6, 1.27P CASE 483AE

ISSUE C

DATE 21 JAN 2022

98AON13655G

DOCUMENT NUMBER: Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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