High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer
中川善之助
An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs
Special Section on Recent Development of Electro-Mechanical Devices — Papers selected from International Session on Electro-Mechanical Devices 2011 (IS-EMD2011) and other recent research results —
Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures
操作ガイド（本体操作編）
Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices
Jixin CHEN
The photoactive property of the PPLD is convenient for its adaption to LCD manufacturing process
Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Workspace MDM 管理コンソールマニュアル 02. 組織 / ユーザー 最終更新日 2017 年 8 月 3 日 1
Especially, the SRAM cell uses the smallest transis- tor to achieve high density integration and the yield of the SRAM cell is rapidly decreasing
It is newly found that|VTH|of the OFF-state pFETs in the SRAM cell is selectively lowered which improves the cell stability and contributes to the self-improvement
The fabrication and evaluation results of the vibratory-type energy harvesters, which employ electrostatic and electro- magnetic mechanisms, are described
The Contact Resistance Performance of Gold Coated
地図データダウンロードサービスガイド（バージョンアップ版）
ソフトウェアダウンロードサービスガイド
PRV-LX1_V305アップデート手順書
(1)SUMMARY We describe an In-Cell Projected Capacitive Touch Panel in a display using IGZO TFT technology
2
