N-Channel
POWERTRENCH ) MOSFET
100 V, 300 A, 2.0 m
Features
• Typical R
DS(on)= 1.5 m at V
GS= 10 V, I
D= 80 A
• Typical Q
g(tot)= 95 nC at V
GS= 10 V, I
D= 80 A
• UIS Capability
• Qualified to AEC Q101
• This Device is Pb−Free and is RoHS Compliant
Applications• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
www.onsemi.com
MARKING DIAGRAM
$Y&Z&3&K FDBL86062
$Y = ON Semiconductor Logo
&Z&3 = Data Code (Year & Week)
&K = Lot
FDBL86062 = Specific Device Code
See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION S
D
G
H−PSOF8L 11.68x9.80 CASE 100CU
MOSFET MAXIMUM RATINGS TJ = 25°C unless otherwise noted
Symbol Parameter Rating Units
VDSS Drain−to−Source Voltage 100 V
VGS Gate−to−Source Voltage ±20 V
ID Drain Current - Continuous (VGS = 10) (Note 1) TC = 25°C 300 A
Pulsed Drain Current TC = 25°C See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 352 mJ
PD Power Dissipation 429 W
Derate Above 25°C 2.9 W/°C
TJ, TSTG Operating and Storage Temperature −55 to +175 °C
RJC Thermal Resistance, Junction to Case 0.35 °C/W
RJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting TJ= 25°C, L = 0.1 mH, IAS = 84 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche.
3. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Reel Size Tape Width Quantity
FDBL86062 FDBL86062−F085 MO−299A 13” 24 mm 2000 Units
ELECTRICAL CHARACTERISTICS TJ = 25°C, unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
OFF CHARACTERISTICS
BVDSS Drain−to−Source Breakdown Voltage ID = 250 A, VGS = 0 V 100 − − V
IDSS Drain−to−Source Leakage Current VDS = 100 V,
VGS = 0 V TJ = 25°C − − 5 A
TJ = 175°C (Note 4) − − 2 mA
IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A 2.0 3.1 4.5 V
RDS(on) Drain to Source On Resistance ID = 80 A,
VGS = 10 V TJ = 25°C − 1.5 2.0 m
TJ = 175°C (Note 4) − 3.3 4.3 DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 50 V, VGS = 0 V,
f = 1 MHz − 6970 − pF
Coss Output Capacitance − 3950 −
Crss Reverse Transfer Capacitance − 29 −
Rg Gate Resistance f = 1 MHz − 0.4 −
Qg(ToT) Total Gate Charge at 10 V VGS = 0 to 10 V VDD = 80 V
ID = 80 A − 95 124 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2 V − 13 −
Qgs Gate−to−Source Gate Charge − 31 −
ELECTRICAL CHARACTERISTICS (continued)TJ = 25°C, unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
SWITCHING CHARACTERISTICS
ton Turn−On Time VDD = 50 V, ID = 80 A,
VGS = 10 V, RGEN = 6 − − 73 ns
td(on) Turn−On Delay − 31 −
tr Rise Time − 25 −
td(off) Turn−Off Delay − 36 −
tf Fall Time − 9 −
toff Turn−Off Time − − 59
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source−to−Drain Diode Voltage ISD = 80 A, VGS = 0 V − − 1.25 V
ISD = 40 A, VGS = 0 V − − 1.2
trr Reverse−Recovery Time IF = 80 A, dISD/dt = 100 A/μs, VDD = 80 V − 115 150 ns
Qrr Reverse−Recovery Charge − 172 224 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
TYPICAL CHARACTERISTICS
Figure 1. Normalized Power Dissipation vs.
Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
POWER DISSIPATION MULTIPLIER ID, DRAIN CURRENT (A)
NORMALIZED THERMAL IMPEDANCE, ZJCIDM, PEAK CURRENT (A)
0 25 50
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 50 100 150 200 250 300 350 400
CURRENT LIMITED
BY PACKAGE VGS = 10V
10−5 10−4 10−3 10−2 10−1 100 101
0.01 0.1 1
SINGLE PULSE D = 0.50
0.20 0.10 0.05 0.02 0.01
DUTY CYCLE − DESCENDING ORDER 2
NOTES:
DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TC
PDM
t1 t2
t, RECTANGULAR PULSE DURATION (s)
75 100 125 150 175 25 50 75 100 125 150 175 200
10−5 10−4 10−3 10−2 10−1 11 0
100 1000 2000
VGS = 10 V
SINGLE PULSE
I = 175 − TC 150 FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS:
TJ = 25°C
I25
TYPICAL CHARACTERISTICS
(continued)Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.1 1 10 100 500
0.1 1 10 100 1000 2000
1 ms 10 ms OPERATION IN THIS
AREA MAY BE LIMITED BY r DS(on)
SINGLE PULSE TJ = MAX RATED
100 ms
1 10 100 1000
STARTING TJ = 150
STARTING TJ = 25 tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD) If R = 0
If R0 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1]
PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX
VDD= 5 V
VGS= 0 V
0 1 2 3 4 5 0
50 100 150 200 250 300 350
VGS
15 V Top 10 V8 V 7 V 6 V5.5 V 5 V Bottom 250s PULSE WIDTH
0 50 100 150 200 250 300 350
VGS
15 V Top 10 V8 V 7 V 6 V5.5 V 5V Bottom
250s PULSE WIDTH
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515
100 s
°C
°C
0.001 0.01 0.1 1 10 100 1000
TJ = 25°C TJ = −55°C
TJ = 175°C
TJ = 175°C TJ = 25°C
TJ = 25°C TJ = 175°C
TJ = 25°C
0 350 300 250 200 150 100 50
3 4 5 6 7
350 100
10
1
0.10.0 0.2 0.2 0.6 0.8 1.0 1.2
0 1 2 3 4 5
TYPICAL CHARACTERISTICS
(continued)Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(°C)
rDS(on), DRAIN TO SOURCE ON−RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (°C)
NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Qg, GATE CHARGE (nC) VGS, GATE TO SOURCE VOLTAGE(V)
TJ, JUNCTION TEMPERATURE (°C)
4 5 6 7 8 9 10
0 5 10 15 20 25 30
ID = 80 A PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX
−80 −40 0 40 80 120 160 200 0.5
1.0 1.5 2.0
2.5 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX
ID = 80 A VGS = 10 V
0.3 0.5 0.7 0.9 1.1
1.3 VGS = VDS
ID = 250A
0.90 0.95 1.00 1.05 1.10
ID = 5 mA
0.1 1 10 100
10 100 1000 10000
f = 1 MHz
VGS = 0 V Crss
Coss Ciss
VDD = 50 V
VDD = 40 V ID = 80 A
VDD = 60 V TJ = 175°C
TJ = 25°C
−80 −40 0 40 80 120 160 200 −80 −40 0 40 80 120 160 200
10
8
6
4
2
00 20 40 60 80 100
H−PSOF8L 11.68x9.80 CASE 100CU
ISSUE B
DATE 20 MAY 2022
A = Assembly Location Y = Year
WW = Work Week ZZ = Assembly Lot Code XXXX = Specific Device Code
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
GENERIC MARKING DIAGRAM*
AYWWZZ
XXXXXXXX XXXXXXXX
98AON13813G DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1 H−PSOF8L 11.68x9.80
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