MOSFET – N-Channel, POWERTRENCH )
100 V
FDC3612
General Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R
DS(ON)and fast switching speed.
Features
• 2.6 A, 100 V
R
DS(ON)= 125 mW @ V
GS= 10 V R
DS(ON)= 135 m W @ V
GS= 6 V
• High Performance Trench Technology for Extremely Low R
DS(ON)• Low Gate Charge (14 nC Typical)
• High Power and Current Handling Capability
• Fast Switching Speed
• This is a Pb−Free Device
Applications• DC/DC Converter
ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage 100 V
VGSS Gate−Source Voltage ±20 V
ID Drain Current Continuous (Note 1a) 2.6 A
Pulsed 20 A
EAS Single Pulse Avalanche Energy (Note 3) 37 mJ PD Maximum Power
Dissipation (Note 1a) 1.6 W
(Note 1b) 0.8 W
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJA Thermal Resistance, Junction−to−Ambient
(Note 1a) 78 °C/W
RqJC Thermal Resistance, Junction−to−Case
(Note 1) 30 °C/W
MARKING DIAGRAM TSOT23 6−Lead (SUPERSOTt−6)
CASE 419BL
PINOUT D D G D
D S
XXX MG G 1
XXX = Specific Device Code M = Date Code
G = Pb−Free Package
See detailed ordering and shipping information on page 5 of this data sheet.
ORDERING INFORMATION VDSS RDS(ON) MAX ID MAX
100 V 125 mW @ 10 V 2.6 A
135 mW @ 6 V
(Note: Microdot may be in either location)
6 5 4 1
2 3
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 2)
WDSS Drain−Source Avalanche Energy Single Pulse, VDD = 50 V, ID = 2.6 A − − 90 mJ
IAR Drain−Source Avalanche Current − − 2.6 A
OFF CHARACTERISTICS
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA 100 − − V
DBVDSS DTJ
Breakdown Voltage Temperature
Coefficient ID = 250 mA, Referenced to 25°C − 99 − mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V − − 10 mA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V − − –100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 2 2.3 4 V
DVGS(th) DTJ
Gate Threshold Voltage Temperature
Coefficient ID = 250 mA, Referenced to 25°C − –6 − mV/°C
RDS(on) Static Drain–Source On Resistance VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.5 A
VGS = 10 V, ID = 2.6 A, TJ = 125°C
−−
−
8691 157
125135 240
mW
ID(on) On−State Drain Current VGS = 10 V, VDS = 5 V 10 − − A
gFS Forward Transconductance VDS = 10 V, ID = 2.6 A − 10 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz − 660 − pF
Coss Output Capacitance − 55 − pF
Crss Reverse Transfer Capacitance − 40 − pF
Rg Gate Resistance 0.1 1.4 3.0 W
SWITCHING CHARACTERISTICS (Note 2)
td(on) Turn–On Delay Time VDD = 50 V, ID = 1 A, VGS = 10 V,
RGEN = 6 W − 6 11 ns
tr Turn–On Rise Time − 3.5 7 ns
td(off) Turn–Off Delay Time − 23 37 ns
tf Turn–Off Fall Time − 3.7 7.4 ns
Qg Total Gate Charge VDS = 50 V, ID = 2.6 A, VGS = 10 V − 14 20 nC
Qgs Gate–Source Charge − 2.3 − nC
Qgd Gate–Drain Charge − 3.6 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) − 0.76 1.2 V trr Diode Reverse Recovery Time IF = 2.6 A, dIF/dt = 100 A/ms (Note 2)
IF = 2.6 A, dIF/dt = 100 A/ms (Note 2)
− 31 − ns
Qrr Diode Reverse Recovery Charge − 56 − nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
a.) 78 °C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board
TYPICAL CHARACTERISTICS
VSD, Body Diode Forward Voltage (V) RDS(ON), On−Resistance (W)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with Gate−to−Source Voltage
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
ID, Drain Current (A) RDS(ON), Normalized Drain−Source On−Resistance
RDS(ON), Normalized Drain−Source On−Resistance
TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V)
VGS, Gate to Source Voltage (V)
ID, Drain Current (A) IS, Reverse Drain Current (A)
0 4 8 12 16 20
0 2
4.0V 5.0V
4.5V
3.5V
4 6 8
VGS = 10 V
0.8 1 1.2 1.4 1.6 1.8
0 4 8 12 16 20
4.0V 4.5V 6.0V
5.0V 10V VGS = 3.5 V
0.2 0.6 1 1.4 1.8 2.2
−50 ID = 2.6 A VGS = 10 V
−25 0 25 50 75 100 125 150
0.05 0.08 0.11 0.14 0.17 0.2 0.23 0.26
2 4 6 8 10
ID = 1.3 A
TA = 125°C
TA = 25°C
0 4 8 12 16 20
2 2.5 3 3.5 4 4.5
VDS = 5 V
−55°C TA = 125°C
25°C
0.0001 0.001 0.01 0.1 1 10 100
0
VGS = 0 V
−55°C TA = 125°C
25°C
0.2 0.4 0.6 0.8 1 1.2
TYPICAL ELECTRICAL CHARACTERISTICS
(continued)VDS, Drain to Source Voltage (V)
P(pk), Peak Transient Power (W)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
Qg, Gate Charge (nC)
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
Capacitance (pF)
VGS, Gate−Source Voltage (V)
t1, Time (s)
Figure 11. Transient Thermal Response Curve
(Note: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.) t1, Time (s)
r(t), Normalized Effective Transient Thermal Resistance 0 2 4 6 8 10
0 15
75V 50V ID = 2.6 A
VDS = 25 V
12
3 6 9 0
200 400 600 800 1000
0 20 100
CISS
CRSS COSS
40 60 80
f = 1 MHz VGS = 0 V
0.1 1 10 100
0.001 0.01 0.1 1 10 50
1s 100ms
DC 100ms 10ms
1ms
200 VGS = 10 V
SINGLE PULSE RqJA = 156°C/W TA = 25°C RDS(ON) LIMIT
0 10 20 30 40
0.001 0.01 0.1 1 10 100
SINGLE PULSE RqJA = 156°C/W TA = 25°C
0.01 0.1 1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE 0.020.01
0.05 0.1 0.2 D = 0.5
RqJA(t) = r(t) * RqJA RqJA = 156°C/W
TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2
P(pk)
t2
t1
ORDERING INFORMATION
Device Device Marking Package Type Shipping†
FDC3612 .362 TSOT−23−6 (Pb−free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
TSOT23 6−Lead CASE 419BL
ISSUE A
DATE 31 AUG 2020
XXX MG G GENERIC MARKING DIAGRAM*
1
XXX = Specific Device Code M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products
(Note: Microdot may be in either location) SCALE 2:1
1
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