MOSFET – Dual, N-Channel, POWERTRENCH)

MOSFET – Dual, N-Channel, POWERTRENCH ⁾

100 V Specified

FDC3601N

General Description

These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.

Features

• 1.0 A, 100 V

R

= 500 W @ V

= 10 V R

= 550 W @ V

= 6.0 V

• Low Gate Charge (3.7 nC Typical)

• Fast Switching Speed

• High Performance Trench Technology for Extremely Low R

• SUPERSOTt−6 Package: Small Footprint 72% (Smaller than Standard SO−8); Low Profile (1 mm Thick)

• This is a Pb−Free Device

• Load Switch

• Battery Protection

• Power Management

ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise noted)

Symbol Parameter Ratings Unit

V_DSS Drain−Source Voltage 100 V

V_GSS Gate−Source Voltage ±20 V

I_D Drain Current − Continuous (Note 1a) 1.0 A

− Pulsed 4.0 A

P_D Power Dissipation for Single Operation

(Note 1a) 0.96 W

(Note 1b) 0.9 W

(Note 1c) 0.7 W

T_J, T_STG Operating and Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Unit

MARKING DIAGRAM TSOT23 6−Lead

SUPERSOT−6 CASE 419BL

PINOUT G1S2G2 D1

S1D2

XXX MG G 1

XXX = Specific Device Code M = Date Code

G = Pb−Free Package

3

2

1 4

5

6

See detailed ordering and shipping information on page 5 of this data sheet.

ORDERING INFORMATION V_DSS R_DS(ON) MAX I_D MAX

100 V 500 mW @ 10 V 1.0 A

550 mW @ 6.0 V

(Note: Microdot may be in either location)

ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BV_DSS Drain–Source Breakdown Voltage V_GS = 0 V, I_D = 250 mA 100 − − V

DBVDSS

DTJ

Breakdown Voltage Temperature

Coefficient ID = 250 mA,Referenced to 25°C − 105 − mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 80 V, V_GS = 0 V − − 10 mA

I_GSSF Gate–Body Leakage, Forward V_GS = 20 V, V_DS = 0 V − − 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V − − –100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage V_DS = V_GS, I_D = 250 mA 2 2.6 4 V

DV_GS(th) DT_J

Gate Threshold Voltage Temperature

Coefficient I_D = 250 mA, Referenced to 25°C − –5 − mV/°C

R_DS(on) Static Drain–Source On–Resistance V_GS = 10 V, I_D = 1.0 A VGS = 6 V, ID = 0.9 A

V_GS = 10 V, I_D = 1.0 A, T_J = 125°C

−−

−

370396 685

500550 976

mW

I_D(on) On−State Drain Current V_GS = 10 V, V_DS = 10 V 3 − − A

g_FS Forward Transconductance V_DS = 5 V, I_D = 1.0 A − 3.6 − S

DYNAMIC CHARACTERISTICS

C_iss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz − 153 − pF

Coss Output Capacitance − 5 − pF

C_rss Reverse Transfer Capacitance − 1 − pF

SWITCHING CHARACTERISTICS (Note 2)

t_d(on) Turn–On Delay Time V_DD = 50 V, I_D = 1 A, V_GS = 10 V,

RGEN = 6 W − 8 16 ns

t_r Turn–On Rise Time − 4 8 ns

td(off) Turn–Off Delay Time − 11 20 ns

t_f Turn–Off Fall Time − 6 12 ns

Qg Total Gate Charge VDS = 50 V, ID = 1.0 A, VGS = 10 V − 3.7 5 nC

Q_gs Gate–Source Charge − 0.8 − nC

Q_gd Gate–Drain Charge − 1 − nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S Maximum Continuous Drain–Source Diode Forward Current − − 0.8 A

VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A (Note 2) − 0.8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R_qJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qJC is guaranteed by design while R_qCA is determined by the user’s board design.

Scale 1:1 on letter size paper

a. 130°C/W when mounted on a 0.125 in² pad of 2 oz.

copper.

b. 140°C/W when mounted on a .005 in² pad of 2 oz.

copper.

c. 180°C/W when mounted on a minimum pad.

TYPICAL CHARACTERISTICS

4.5 V 5.0 V

6.0 V10 V

0.0001 0.001 0.01 0.1 1 10

−55°C 3

4.5 6

1.5

0.25 0.5 0.75 1 1.25 0.8 1.2 1.4

VSD, Body Diode Forward Voltage (V) RDS(ON), On−Resistance (W)

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage

Figure 3. On−Resistance Variation with Temperature

Figure 4. On−Resistance Variation with Gate−to−Source Voltage

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature

0 2 4 6 8

0 1 2 3 4

V_DS, Drain−Source Voltage (V) ID, Drain Current (A)

0 1 2 3 4

VGS = 4.0 V

I_D, Drain Current (A) RDS(ON), Normalized Drain−Source On−Resistance

−50 −25 0 25 50 75 100 125 150

0.2 0.6 1.4 1.8 2.2

2.6 I_D = 1.0 A VGS = 10 V

RDS(ON), Normalized Drain−Source On−Resistance

T_J, Junction Temperature (°C)

2 4 6 8 10

T_A = 125°C

V_GS, Gate to Source Voltage (V)

1.5 2.5 3.5 4.5 5.5

0

V_DS = 5 V

VGS, Gate to Source Voltage (V) ID, Drain Current (A)

0 0.4 0.6 0.8 1 1.2

V_GS = 10 V 6.0 V

4.5 V 4.0 V

IS, Reverse Drain Current (A)

T_A = 25°C

I_D = 0.5 A

T_A = 125°C

25°C

V_GS = 0 V

−55°C T_A = 125°C

25°C 5.0 V

1.0 1.6

0.2 1

TYPICAL ELECTRICAL CHARACTERISTICS

V_DS, Drain−Source Voltage (V)

P(pk), Peak Transient Power (W)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation

0 1 2 3

Q_g, Gate Charge (nC)

ID, Drain Current (A)

0 10 20 30 40

V_DS, Drain to Source Voltage (V)

Capacitance (pF)

0.1 1 10 100

VGS, Gate−Source Voltage (V)

0.001 0.01 0.1 1 1000

t₁, Time (s)

Figure 11. Transient Thermal Response Curve

(Note: Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.) 0 4

2 4 6 8 10

0 50 100 150 200

0.001 0.1 10

0 10 20 30 40 50

50 f = 1 MHz VGS = 0 V V_DS = 30 V

ID = 1.0 A

50 V 70 V

C_ISS

C_OSS C_RSS

100 ms 10 ms1 ms 100 ms 1 s DC V_GS = 10 V SINGLE PULSE R_qJA = 180°C/W T_A = 25°C

RDS(ON) LIMIT SINGLE PULSE

R_qJA = 180°C/W T_A = 25°C

0.001 0.01 0.1 1 10 1000

t₁, Time (s) r(t), Normalized Effective Transient Thermal Resistance

0.001 0.01 0.1 1

100 R_qJA(t) = r(t) * R_qJA R_qJA = 180°C/W

T_J − T_A = P * R_qJA(t) Duty Cycle, D = t₁ / t₂

P(pk) t2

t1

D = 0.5 0.2

0.1 0.05

0.020.01

SINGLE PULSE

0.0001

100 10 1000

0.01 1

ORDERING INFORMATION

Device Device Marking Package Type Reel Size Tape Width Shipping^†

FDC3601N .601 TSOT−23−6

(Pb−free) 7” 8 mm 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

TSOT23 6−Lead CASE 419BL

ISSUE A

DATE 31 AUG 2020

XXX MG G GENERIC MARKING DIAGRAM*

1

XXX = Specific Device Code M = Date Code

G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products

(Note: Microdot may be in either location) SCALE 2:1

1

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death