FDFS6N548 Integrated N-Channel POWERTRENCH

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Integrated N-Channel

POWERTRENCH ^® MOSFET and Schottky Diode

Description

The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on−state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Features

• Max r

DS(on)

= 23 mW at V

GS

= 10 V, I

D

= 7 A

• ^{Max r}

DS(on)

= 30 mW at V

GS

= 4.5 V, I

D

= 6 A

• ^V

F

< 0.45 V @ 2 A V

F

< 0.28 V @ 100 mA

• Schottky and MOSFET Incorporated into Single Power Surface Mount SO−8 Package

• Electrically Independent Schottky and MOSFET Pinout for Design Flexibility

• Low Miller Charge

Application

• DC/DC Conversion

MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)

Symbol Parameter Value Unit

V_DS Drain−to−Source Voltage 30 V

V_GS Gate−to−Source Voltage ±20 V

I_D Drain Current Continuous (Note 1a) 7 A

Pulsed 30

P_D Power Dissipation Dual Operation 2 W

Single Operation (Note 1a) 1.6 E_AS Drain−Source Avalanche Energy (Note 3) 12 mJ V_RRM Schottky Repetitive Peak Reverse Voltage 30 V

I_O Schottky Average Forward Current (Note 1a) 2 A T_J, T_STG Operating and Storage Junction

Temperature Range −55 to

+150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R_qJA Thermal Resistance,

Junction−to−Ambient (Note 1a) 78 _C/W R_qJC Thermal Resistance,

Junction−to−Case (Note 1) 40 _C/W

SOIC8 CASE 751EB

See detailed ordering and shipping information on page 6 of this data sheet.

ORDERING INFORMATION www.onsemi.com

A A S G C C D D

Pin 1

8 1

7 2

6 3

5 4

C C D D A

A S G

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ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BV_DSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 250 mA 30 V

DBVDSS/ DTJ

Breakdown Voltage Temperature

Coefficient ID = 250 mA, Referenced to 25°C 22 mV/°C

I_DSS Zero Gate Voltage Drain Current V_GS = 0 V, V_DS = 24 V 1 mA

V_GS = 0 V, V_DS = 24 V, T_J = 125°C 250

I_GSS Gate–to−Source Leakage Current V_GS = ±20 V, VDS = 0 V ±100 nA

ON CHARACTERISTICS

V_GS(th) Gate−to−Source Threshold Voltage V_DS = V_GS, I_D = 250 mA 1.2 1.8 2.5 V DV_GS(th)/

DTJ

Gate−to−Source Threshold Voltage

Temperature Coefficient I_D = 250 mA, Referenced to 25°C −5 mV/°C

R_DS(on) Drain−to−Source On−Resistance VGS = 10 V, ID = 7 A 19 23 mW

VGS = 4.5 V, ID = 6 A 23 30

VGS = 10 V, ID = 7 A, TJ = 125°C 26 31

gFS Forward Transconductance VDS = 5 V, ID = 7 A 20 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 525 700 pF

Coss Output Capacitance 100 133 pF

C_rss Reverse Transfer Capacitance 65 100 pF

R_g Gate Resistance f = 1 MHz 0.8 W

SWITCHING CHARACTERISTICS

t_d(on) Turn–On Delay Time VDD = 15 V, ID = 7 A, VGS = 10 V,

R_GEN = 6 W 6 12 ns

t_r Rise Time 2 10 ns

t_d(off) Turn–Off Delay Time 14 25 ns

t_f Fall Time 2 10 ns

Q_g(TOT) Total Gate Charge at 10 V V_DS = 15 V, I_D = 7 A, V_GS = 10 V 9 13 nC

Q_gs Gate–to−Source Gate Charge 1.5 nC

Q_gd Gate–to−Drain “Miller” Charge 2 nC

DRAIN–SOURCE DIODE CHARACTERISTICS

V_SD Source−to−Drain Diode Forward Voltage V_GS = 0 V, I_S = 7 A (Note 2) 0.90 1.25 V

t_rr Reverse Recovery Time I_F = 7 A, di/dt = 100 A/ms 23 35 ns

Q_rr Reverse Recovery Charge 14 21 nC

SCHOTTKY DIODE CHARACTERISTICS

V_R Reverse Breakdown Voltage I_R = −1 mA −30 V

I_R Reverse Leakage V_R = −10 V T_J = 25°C −39 −250 mA

T_J = 125°C −18 mA

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1. R_qJAis the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user’s board design.

a) 78°C/W when mounted on a 0.5 in² pad of 2 oz copper

b) 125°C/W when mounted on a 0.02 in² pad of 2 oz copper

c) 135°C/W when mounted on a minimum pad

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

3. Starting TJ = 25°C, L = 1 mH, IAS = 5.0 A, VDD = 27 V, VGS = 10 V.

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TYPICAL CHARACTERISTICS

(T_J = 25°C unless otherwise noted)

0 1 2 3 4

0 5 10 15 20 25 30

V_GS = 3.5V V_GS = 4.5V

V_GS = 3V V_GS = 4V

V_GS = 10V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.50 1.0 1.5 2.0 2.5 3.0

V_GS = 3V

V_GS = 10V V_GS = 4V V_GS = 4.5V V_GS = 3.5V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

ID, DRAIN CURRENT(A)

−75 −50 −25 0 25 50 75 100 125 150 0.6

0.8 1.0 1.2 1.4 1.6

ID = 7A VGS = 10V

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

TJ, JUNCTION TEMPERATURE(^oC) 102 4 6 8 10

20 30 40 50 60

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

T_J= 150^oC

T_J= 25^oC ID= 7A

rDS(on), DRAIN TO SOURCE ON−RESISTANCE(mΩ)

VGS, GATE TO SOURCE VOLTAGE (V)

0 1 2 3 4

0 5 10 15 20 25 30

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

T_J = −55^oC T_J = 25^oC

T_J= 150^oC ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V) VDD = 5V

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10

T_J = −55ôC T_J = 25ôC T_J= 150ôC

V_GS= 0V

IS, REVERSE DRAIN CURRENT (A)

V , BODY DIODE FORWARD VOLTAGE (V) 60

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

Figure 3. Normalized On−Resistance vs.

Junction Temperature

Figure 4. On−Resistance vs. Gate−to−Source Voltage

5 10 15 20 25 30

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TYPICAL CHARACTERISTICS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage

Figure 9. Unclamped Inductive Switching Capability

Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation

0 2 4 6 8 10

V_DD = 20V V_DD= 15V

VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC) V_DD = 10V

I_D = 7A

0.1 1 10

100 1000

f = 1MHz VGS = 0V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V) Crss

Coss Ciss

40 30

0.01 0.1 1 10

1 2 3 4 5 6 78

T_J= 25^oC

T_J= 125^oC

t_AV, TIME IN AVALANCHE(ms) IAS, AVALANCHE CURRENT(A)

20 025 50 75 100 125 150

2 4 6 8

R_q_JA= 78^oC/W

V_GS= 4.5V VGS= 10V

ID, DRAIN CURRENT (A)

T_A, AMBIENT TEMPERATURE(^oC)

0.1 1 10

0.01 0.1 1 10

1s DC 10s 100ms 10ms 1ms 100us

OPERATION IN THIS AREA MAY BE LIMITED BY r_DS(on)

SINGLE PULSE TJ = MAX RATED TA = 25^oC ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V) 50

80 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹ 10² 10³ 1

10 100

V_GS = 10V

SINGLE PULSE

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s) 300

0.5

T_A = 25^oC I = I25

FOR TEMPERATURES ABOVE 25^oC DERATE PEAK CURRENT AS FOLLOWS:

150–TA 125

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TYPICAL CHARACTERISTICS

Figure 13. Schottky Diode Forward

Characteristics Figure 14. Schottky Diode Reverse Characteristics

Figure 15. Transient Thermal Response Curve

0.0 0.4 0.8 1.2 1.6 2.0

0.001 0.01 0.1 1 10

T_J= 125^oC

T_J= 25^oC

IF , FORWARD LEAKAGE CURRENT (A)

VF, FORWARD VOLTAGE (V) 30

0 5

0.001 0.01 0.1 1 100

T_J = 125^oC

T_J = 25^oC

V_R, REVERSE VOLTAGE (V) IR, REVERSE LEAKAGE CURRENT (mA)

10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 10⁰ 10¹ 10² 10³

0.01 0.1

1 DUTY CYCLE−DESCENDING ORDER

NORMALIZED THERMAL IMPEDANCE, ZqJA

t, RECTANGULAR PULSE DURATION (s) D = 0.5

0.2 0.1 0.05 0.02 0.01

SINGLE PULSE 2

3E−3

P_DM

t₁ t₂ NOTES:

DUTY FACTOR: D = t1/t₂ PEAK T_J = P_DM x Z_qJA x R_qJA + T_A

10 15 20 25

10

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Reel Size Tape Width Shipping^†

FDFS6N548 FDFS6N548 SO−8 330 mm 12 mm 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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SOIC8 CASE 751EB

ISSUE A

DATE 24 AUG 2017

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98AON13735G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 SOIC8

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

FDFS6N548 Integrated N-Channel POWERTRENCH

Integrated N-Channel

POWERTRENCH ® MOSFET and Schottky Diode

The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on−state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

• Max r

= 23 mW at V

= 10 V, I

= 7 A

• Max r

= 30 mW at V

= 4.5 V, I

= 6 A

• V

< 0.45 V @ 2 A V

< 0.28 V @ 100 mA

• Schottky and MOSFET Incorporated into Single Power Surface Mount SO−8 Package

• Electrically Independent Schottky and MOSFET Pinout for Design Flexibility

• Low Miller Charge

• DC/DC Conversion

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

POWERTRENCH ^® MOSFET and Schottky Diode

• ^{Max r}

• ^V