MOSFET – N-Channel, POWERTRENCH )
80 V, 100 A, 4.2 mW
FDD86367-F085
Features
• Typical R
DS(on)= 3.3 m W at V
GS= 10 V, I
D= 80 A
• Typical Q
g(tot)= 68 nC at V
GS= 10 V, I
D= 80 A
• UIS Capability
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−to−Source Voltage 80 V
VGS Gate−to−Source Voltage ±20 V
ID Drain Current − Continuous (VGS = 10)
(Note 1) TC = 25°C 100 A
Pulsed Drain Current TC = 25°C See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 82 mJ
PD Power Dissipation 227 W
Derate Above 25°C 1.52 W/°C
TJ, TSTG Operating and Storage Temperature −55 to +175 °C RqJC Thermal Resistance, Junction to Case 0.66 °C/W RqJA Maximum Thermal Resistance,
Junction to Ambient (Note 3) 52 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 40 mH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is
DPAK3 (TO−252 3 LD) CASE 369AS MARKING DIAGRAM
$Y&Z&3&K FDD 86367
FDD86367 = Specific Device Code
$Y = onsemi Logo
&Z = Assembly Plant Code
&3 = 3−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION D
S G
N−Channel
G S
D
PACKAGE MARKING AND ORDERING INFORMATION
Device Device Marking Package Reel Size Tape Width Shipping†
FDD86367−F085 FDD86367 DPAK3 (TO−252 3 LD)
(Pb−Free) 13” 16 mm 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V IDSS Drain−to−Source Leakage Current VDS = 80 V,
VGS = 0 V TJ = 25°C − − 1 mA
TJ = 175°C (Note 4) − − 1 mA
IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2 3 4 V
RDS(on) Drain to Source On Resistance ID = 80 A,
VGS= 10 V TJ = 25°C − 3.3 4.2 mW
TJ = 175°C (Note 4) − 6.6 8.4 mW
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 40 V, VGS = 0 V, f = 1 MHz − 4840 − pF
Coss Output Capacitance − 814 − pF
Crss Reverse Transfer Capacitance − 31 − pF
Rg Gate Resistance VGS = 0.5 V, f = 1 MHz − 2.3 − W
Qg(ToT) Total Gate Charge VGS = 0 to 10 V VDD = 40 V,
ID = 80 A − 68 88 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2 V − 8.8 − nC
Qgs Gate−to−Source Gate Charge VDD = 40 V, ID = 80 A − 22 − nC
Qgd Gate−to−Drain “Miller“ Charge − 14 − nC
SWITCHING CHARACTERISTICS
ton Turn−On Time VDD = 40 V, ID = 80 A, VGS = 10 V,
RGEN = 6 W − − 104 ns
td(on) Turn−On Delay − 20 − ns
tr Rise Time − 49 − ns
td(off) Turn−Off Delay − 36 − ns
tf Fall Time − 16 − ns
toff Turn−Off Time − − 80 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source−to−Drain Diode Voltage ISD = 80 A, VGS = 0 V − − 1.3 V
ISD = 40 A, VGS = 0 V − − 1.2 V
trr Reverse−Recovery Time VDD = 64 V, IF = 80 A, dISD/dt = 100 A/ms − 68 102 ns
Qrr Reverse−Recovery Charge − 66 106 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ= 175°C. Product is not tested to this condition in production.
TYPICAL CHARACTERISTICS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE (
0 40 80 120 160
200 CURRENT LIMITED
BY SILICON
CURRENT LIMITED BY PACKAGE
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (
10−5 10−4 10−3 10−2 10−1 100 101
0.01 0.1 1
SINGLE PULSE D = 0.50
0.20 0.10 0.050.02 0.01
NORMALIZED THERMAL IMPEDANCE, ZqJC
t, RECTANGULAR PULSE DURATION (s) DUTY CYCLE − DESCENDING ORDER
2
PDM
t1
t2
10−5 10−4 10−3 10−2 10−1 100 101
10 100 1000
5000 VGS = 10 V
SINGLE PULSE IDM,PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION (s)
°C)
°C)
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
NOTES:
DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZqJA x RqJA + TC
TC = 25°C
FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS:
I+I2
ƪ Ǹ175150*TCƫ
Figure 1. Normalized Power Dissipation
vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
TYPICAL CHARACTERISTICS
(continued)Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
1 10 100 200
0.01 0.1 1 10 100 1000
100
1 ms 10 ms ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V) 100 ms
0.0011 10 100 500
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
2 10
0 50 100 150 200 250 300 350
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.10.0 1 10 100 350
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
0 50 100 150 200 250 300 350
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
00 50 100 150 200 250 300 350
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V) m
SINGLE PULSE TJ = MAX RATED TC = 25°C OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
NOTE: Refer to ON Application Notes AN7514 and AN7515
0.01 0.1 1 10 100 1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD) If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1]
STARTING TJ = 25°C
STARTING TJ = 150°C
TJ = 175°C
4 6 8
TJ = 25°C
TJ = −55°C
PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDD = 5 V
TJ = 175°C
TJ = 25°C VGS = 0 V
0.2 0.4 0.6 0.8 1.2 1.4 1.6
1 2 3 4 5
0 1 2 3 4 5
80 ms PULSE WIDTH Tj = 25°C
VGS 15 V Top 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom
VGS 15 V Top 10 V 8 V 7 V 6 V 5.5 V 5 V Bottom 80 ms PULSE WIDTH
Tj = 175°C s
TYPICAL CHARACTERISTICS
(continued)04 10 20 30 40 50
rDS(on), DRAIN TO SOURCE ON−RESISTANCE (m
VGS, GATE TO SOURCE VOLTAGE (V)
0.4−80 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
NORMALIZED DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (
0.0 0.3 0.6 0.9 1.2 1.5
NORMALIZED GATE THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (°C)
0.90 0.95 1.00 1.05 1.10
NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (
0.1 1 10 80
10 100 1000 10000
Crss
Coss
Ciss
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
00 2 4 6 8
10 VDD = 32 V
40 V 48 V ID = 80 A
Qg, GATE CHARGE (nC) VGS, GATE TO SOURCE VOLTAGE (V)
°C)
°C)
W)
f = 1 MHz VGS= 0 V
VGS= VDS
ID= 250 mA ID= 5 mA
TJ = 175°C
TJ = 25°C
PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX ID = 80 A
PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX
ID= 80 A VGS= 10 V
5 6 7 8 9 10 −40 0 40 80 120 160 200
−80 −40 0 40 80 120 160 200
−80 −40 0 40 80 120 160 200
20 40 60 80
Figure 11. RDSONvs. Gate Voltage Figure 12. Normalized RDSON vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature
Figure 15. Capacitance vs. Drain to Source
Voltage Figure 16. Gate Charge vs. Gate to Source Voltage
DPAK3 (TO−252 3 LD) CASE 369AS
ISSUE A
DATE 28 SEP 2022
XXXX = Specific Device Code A = Assembly Location Y = Year
WW = Work Week ZZ = Assembly Lot Code
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
GENERIC MARKING DIAGRAM*
XXXXXX XXXXXX AYWWZZ
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
