Silicon Carbide Schottky Diode

Diode

1200 V, 50 A

FFSH50120A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Features

• Max Junction Temperature 175 ° C

• Avalanche Rated 441 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

www.onsemi.com

TO−247−2LD CASE 340CL

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION Schottky Diode

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FFSH50120A = Specific Device Code 1

2

1. Cathode 2. Anode

$Y&Z&3&K

FFSH

50120A

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Symbol Parameter Value Unit

V

Peak Repetitive Reverse Voltage 1200 V

E

Single Pulse Avalanche Energy (Note 1) 441 mJ

I

Continuous Rectified Forward Current @ T

< 155°C 50 A

Continuous Rectified Forward Current @ T

< 135°C 77 A

I

Non-Repetitive Peak Forward Surge Current T

= 25°C, 10 ms 1700 A

T

= 150°C, 10 ms 1600 A

I

Non-Repetitive Forward Surge Current Half-Sine Pulse, t

= 8.3 ms 280 A

I

Repetitive Forward Surge Current Half-Sine Pulse, t

= 8.3 ms 85 A

Ptot Power Dissipation T

= 25°C 736 W

T

= 150°C 147 W

T

, T

Operating and Storage Temperature Range −55 to +175 °C

TO−247 Mounting Torque, M3 Screw 60 Ncm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. E

of 441 mJ is based on starting T

= 25 ° C, L = 0.5 mH, I

= 42 A, V = 50 V.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

Thermal Resistance, Junction to Case, Max 0.17 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

V

Forward Voltage I

= 50 A, T

= 25 ° C − 1.45 1.75 V

I

= 50 A, T

= 125 ° C − 1.7 2.0

I

= 50 A, T

= 175 ° C − 2.0 2.4

I

Reverse Current V

= 1200 V, T

= 25 ° C − − 200 m A

V

= 1200 V, T

= 125°C − − 300

V

= 1200 V, T

= 175°C − − 400

Q

Total Capacitive Charge V = 800 V − 252 − nC

C Total Capacitance V

= 1 V, f = 100 kHz − 2560 − pF

V

= 400 V, f = 100 kHz − 234 −

V

= 800 V, f = 100 kHz − 190 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number Top Marking Package Shipping

FFSH50120A FFSH50120A TO−247−2LD 30 Units / Tube

TYPICAL CHARACTERISTICS

(T

= 25°C unless otherwise noted)

Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

Figure 3. Current Derating Figure 4. Power Derating

10⁻⁹ 10⁻⁸ 10⁻⁷ 10⁻⁶ 10⁻⁵

TJ = −55^oC TJ = 175^oC

TJ = 75^oC T_J = 125^oC

TJ = 25^oC

V_R 0

10 20 30 40 50

T_J = 175^oC TJ = 125^oC

TJ = 75^oC TJ = 25^oC

T_J = −55^oC IF, FORWARD CURRENT (A)

V , FORWARD VOLTAGE (V)

25 50 75 100 125 150 175

0 200 400 600 800

D = 0.1

D = 0.2 D = 0.3 D = 0.5

D = 0.7 D = 1 IF, PEAK FORWARD CURRENT (A)

T_C, CASE TEMPERATURE

(

)

25 50 75 100 125 150 175

0 200 400 600 800 1000

PTOT, POWER DISSIPATION (W)

T_C, CASE TEMPERATURE

(

)

0.1 1 10 100 900

100 1000 10000

CAPACITANCE (pF)

V

0 150 300 450 600 750 900

0 50 100 150 200 250 300

QC, CAPACITIVE CHARGE (nC)

V, REVERSE VOLTAGE (V)

200 400 600 800 1000 1200

0.0 0.5 1.0 1.5 2.0 2.5

, REVERSE VOLTAGE (V) , REVERSE VOLTAGE (V) I, REVERSE CURRENT (mA)R

F

TYPICAL CHARACTERISTICS

(T

= 25°C unless otherwise noted)

Figure 7. Capacitance Stored Energy

Figure 8. Junction-to-Case Transient Thermal Response Curve

0 150 300 450 600 750 900

0 20 40 60 80 100

EC, CAPACITIVE ENERGY (mJ)

V_R

10⁻⁶ 10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1

0.001 0.01 0.1 1 2

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

SINGLE PULSE 0.01

0.02 0.050.1 0.2

0.5

t, RECTANGULAR PULSE DURATION (sec) P_DM

t₁ t₂

qJC(t) = r(t) x R_qJC R_qJC = 0.17^oC/W Duty Cycle, D = t₁ / t₂ Peak T_J = P_DM x Z_qJC(t) + T_C DUTY CYCLE−DESCENDING ORDER

Z , REVERSE VOLTAGE (V)

TEST CIRCUIT AND WAVEFORMS

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

L R

+

DUT − CURRENT

SENSE V

V

Q1

I V

V

t

t

t

t

I

I

L = 0.5 mH R < 0.1 W V

= 50 V

EAVL = 1/2LI2 [V

/ (V

− V

)]

Q1 = IGBT (BV

> DUT V

)

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

TO−247−2LD CASE 340CL

ISSUE A

DATE 03 DEC 2019

98AON13850G

DOCUMENT NUMBER:

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license