Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4 NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4 NTH4L022N120M3S

Features

• ^{Typ. R}

= 22 m @ V

= 18 V

• Low Switching Losses (Typ. EON 490 J at 40 A, 800 V)

• 100% Avalanche Tested

• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

Typical Applications

• Solar Inverters

• Electric Vehicle Charging Stations

• UPS (Uninterruptible Power Supplies)

• Energy Storage Systems

• SMPS (Switch Mode Power Supplies)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 1200 V

Gate−to−Source Voltage V_GS −10/+22 V

Recommended Operation Values

of Gate−to−Source Voltage T_C < 175°C V_GSop −3/+18 V Continuous Drain

Current (Note 1) Steady

State TC = 25°C ID 68 A

Power Dissipation

(Note 1) P_D 352 W

Continuous Drain

Current (Note 1) Steady

State T_C = 100°C I_D 48 A

Power Dissipation

(Note 1) P_D 176 W

Pulsed Drain Current

(Note 2) T_C = 25°C I_DM 246 A

Operating Junction and Storage Temperature

Range T_J, T_stg −55 to

+175 °C

Source Current (Body Diode)

T_C = 25°C, VGS = −3 V IS 72 A

Single Pulse Drain−to−Source Avalanche

Energy (I_L(pk) = 23.1 A, L = 1 mH) (Note 3) E_AS 267 mJ Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s) T_L 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 267 mJ is based on starting T_J = 25°C; L = 1 mH, IAS = 23.1 A, VDD = 100 V, VGS = 18 V.

D S1G S2

V_(BR)DSS R_DS(ON) MAX I_D MAX

1200 V 30 m @ 18 V 68 A

N−CHANNEL MOSFET

TO247−4L CASE 340CJ

ORDERING INFORMATION Device Package Shipping NTH4L022N120M3S TO247−4L 30 Units /

Tube H4L022120M3S = Specific Device Code A = Assembly Location

Y = Year WW = Work Week ZZ = Lot Traceability

H4L022 120M3S AYWWZZ MARKING DIAGRAM

D

S2 G

S1

S1: Driver Source S2: Power Source

Table 1. THERMAL CHARACTERISTICS

Parameter Symbol Typ Max Unit

Junction−to−Case − Steady State (Note 1) R_JC 0.33 0.43 °C/W

Junction−to−Ambient − Steady State (Note 1) R_JA 40

Table 2. ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF−STATE CHARACTERISTICS

Drain−to−Source Breakdown Voltage V_(BR)DSS V_GS = 0 V, I_D = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage

Temperature Coefficient V_(BR)DSS/T_J I_D = 1 mA, referenced to 25°C − 0.3 − V/°C Zero Gate Voltage Drain Current I_DSS V_GS = 0 V,

V_DS = 1200 V T_J = 25°C − − 100 A

Gate−to−Source Leakage Current I_GSS V_GS = +22/−10 V, V_DS = 0 V − − ±1 A ON−STATE CHARACTERISTICS (Note 2)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 20 mA 2.04 2.72 4.4 V

Recommended Gate Voltage V_GOP −3 − +18 V

Drain−to−Source On Resistance R_DS(on) V_GS = 18 V, I_D = 40 A, T_J = 25°C − 22 30 m V_GS = 18 V, I_D = 40 A, T_J = 175°C − 47 −

Forward Transconductance g_FS V_DS = 10 V, I_D = 40 A − 34 − S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C_ISS V_GS = 0 V, f = 1 MHz, V_DS = 800 V − 3175 − pF

Output Capacitance C_OSS − 146 −

Reverse Transfer Capacitance C_RSS − 12 −

Total Gate Charge Q_G(TOT) V_GS = −3/18 V, V_DS = 800 V,

ID = 40 A − 151 − nC

Threshold Gate Charge QG(TH) − 20 −

Gate−to−Source Charge QGS − 34 −

Gate−to−Drain Charge QGD − 40 −

Gate−Resistance RG f = 1 MHz − 1.5 −

SWITCHING CHARACTERISTICS

Turn−On Delay Time td(ON) V_GS = −3/18 V, V_DS = 800 V, I_D = 40 A, R_G = 4.5 Inductive load (Note 4)

− 18 − ns

Rise Time tr − 24 −

Turn−Off Delay Time td(OFF) − 48 −

Fall Time t_f − 13 −

Turn−On Switching Loss EON − 490 − J

Turn−Off Switching Loss E_OFF − 221 −

Total Switching Loss E_tot − 711 −

SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward

Current I_SD VGS = −3 V, TC = 25°C − − 72 A

Table 2. ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)(continued)

Parameter Symbol Test Condition Min Typ Max Unit

SOURCE−DRAIN DIODE CHARACTERISTICS

Reverse Recovery Time tRR V_GS = −3/18 V, I_SD = 40 A,

dI_S/dt = 1000 A/s, VDS = 800 V − 22 − ns

Reverse Recovery Charge QRR − 138 − nC

Reverse Recovery Energy EREC − 5 − J

Peak Reverse Recovery Current IRRM − 13 − A

Charge Time T_A − 13 − ns

Discharge Time T_B − 9 − ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. E_ON/E_OFF result is with body diode

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) I_D, DRAIN CURRENT (A)

Figure 3. On−Resistance Variation with

Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage

T_J, JUNCTION TEMPERATURE (°C) V_GS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE

RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE SWITCHING LOSS (J)

12 V VGS = 20 V to 15 V

I_D = 40 A V_GS = 18 V

TJ = 25°C I_D = 40 A

V_DS = 10 V E_tot E_on

RDS(on), ON−RESISTANCE (m)

ID, DRAIN CURRENT (A)

T_J = −55°C TJ = 175°C

T_J = 25°C

T_J = 150°C

Eoff

R_G = 4.5 V_DD = 800 V V_GS = 18/−3 V 12 V

0 50 100

0 2 4 8 10 0 40 80 120 160

0 1.0 1.5 2.0

−55 −30 −5 20 45 70 95 120 145 170 0

50 100 150 200 250

5 9 13 17

0 20 40 60 100

3 6 9 12 15

0 100 500

5 10 20 45

2.5

400 150

200

6 0

0.5 1.0 1.5 2.0

80

T_C = 25°C

1 3 5 7 9

V_GS = 20 V to 15 V

TC = 25°C

0.5

200 300

15 25 30 35 40

TYPICAL CHARACTERISTICS

Figure 7. Switching Loss vs. Drain Voltage Figure 8. Switching Loss vs. Gate Resistance

V_DD (V) R_G, GATE RESISTANCE ()

1000 900

800 700

600 0500

100 200 400 500 600 700 900

10 8

6 4

2 00

100 200 300 400 500 600 700

Figure 9. Switching Loss vs. Temperature Figure 10. Diode Forward Voltage vs. Current

TEMPERATURE (°C) V_SD, BODY DIODE FORWARD VOLTAGE (V)

175 150 125 100

75 50

025 100 200 300 400 500

9 7

5 3

11 10 100 300

SWITCHING LOSS (J) SWITCHING LOSS (J)

SWITCHING LOSS (J) IS, REVERSE DRAIN CURRENT (A)

E_tot

Eon

E_off RG = 4.5

ID = 40 A VGS = 18/−3 V

300

800 E_tot

Eon

E_off ID = 20 A

V_DD = 800 V V_GS = 18/−3 V

E_tot

E_on

Eoff

I_D = 20 A V_DD = 800 V R_G = 4.5 V_GS = 18/−3 V

VGS = −3 V

T_J = −55°C T_J = 175°C

TJ = 25°C

Figure 11. Gate−to−Source Voltage vs. Total

Charge Figure 12. Capacitance vs. Drain−to−Source

Voltage Qg, GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (V)

I_D = 40 A C_iss

Coss

Crss

V_DD = 400 V

V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

CAPACITANCE (pF)

V_DD = 800 V

V_DD = 600 V

f = 1 MHz V_GS = 0 V

−3 0 3 9 15 18

0 20 40 60 80 100 160 1

100 1000 10000

0.1 1 10 100 800

140 6

12

120

10

TYPICAL CHARACTERISTICS

Figure 13. Unclamped Inductive Switching Capability

Figure 14. Maximum Continuous Drain Current vs. Case Temperature

t_AV, TIME IN AVALANCHE (ms) T_C, CASE TEMPERATURE (°C)

Figure 15. Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V)

IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

V_GS = 18 V

Figure 16. Single Pulse Maximum Power Dissipation

t, PULSE WIDTH (sec) P(PK), PEAK TRANSIENT POWER (W)

R_JC = 0.43°C/W

Single Pulse T_J = Max Rated R_JC = 0.43°C/W

T_C = 25°C 100 ms/DC

1 ms T_J = 25°C

100 s

Single Pulse R_JC = 0.43°C/W T_C = 25°C 1

10 100

0.001 0.01 0.1 1 0

20 40 60 80

25 50 75 100 125 150 175

0.1 1 10 100 1000

0.1 1 10 100 1000

10 ms

100 1000 10000 100000

0.00001 0.0001 0.001 0.01 0.1 1

10 s T_J = 150°C

ZJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 0.5 Duty Cycle

Single Pulse 0.2 0.1 0.05

0.02 0.01 _P

DM

t₁

Notes:

Z_JC(t) = r(t) x R_JC R_JC = 0.43°C/W

Peak T_J = P_DM x Z_JC(t) + T_C Duty Cycle, D = t₁/t₂

t₂

0.001 0.01 0.1 1

TO−247−4LD CASE 340CJ

ISSUE A

DATE 16 SEP 2019

98AON13852G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247−4LD

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