NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode

IGBT with Monolithic Free Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Features

• Extremely Efficient Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for Low Losses in IH Cooker Application

• Reliable and Cost Effective Single Die Solution

• This is a Pb−Free Device

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 1200 V

Collector current

@ TC = 25°C

@ T^C = 100°C

IC

8040

A

Pulsed collector current, Tpulse

limited by T_Jmax, 10 ms pulse, V_GE = 15 V

ICM 120 A

Diode forward current

@ T^C = 25°C

@ TC = 100°C

IF

8040

A

Diode pulsed current, T_pulse limited by T_Jmax, 10 ms pulse,

V_GE = 0 V

IFM 120 A

Gate−emitter voltage

Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10)

VGE $20

$25 V Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

384192

W

Operating junction temperature

range T_J −40 to +175 °C

Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AL G C

40 A, 1200 V V

= 2.30 V

E

= 0.95 mJ

E

Device Package Shipping ORDERING INFORMATION

http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

40N120IHR AYWWG G

E C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case R_qJC 0.39 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 500 mA V(BR)CES 1200 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 40 A

V_GE = 15 V, I_C = 40 A, T_J = 175°C V_CEsat −

− 2.30

2.70 2.55

− V

Gate−emitter threshold voltage VGE = VCE, IC = 250 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited V_GE = 0 V, V_CE = 1200 V

VGE = 0 V, VCE = 1200 V, TJ = 175°C I_CES −

− −

− 0.2

2.8 mA

Gate leakage current, collector−emitter

short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 5320 − pF

Output capacitance C_oes − 124 −

Reverse transfer capacitance C_res − 100 −

Gate charge total

VCE = 600 V, IC = 40 A, VGE = 15 V

Q_g − 225 − nC

Gate to emitter charge Q_ge − 36 −

Gate to collector charge Q_gc − 98 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−off delay time TJ = 25°C

VCC = 600 V, IC = 40 A R_g = 10 W VGE = 0 V/ 15V

t_d(off) − 230 − ns

Fall time t_f − 120 −

Turn−off switching loss E_off − 0.95 − mJ

Turn−off delay time TJ = 150°C

V_CC = 600 V, I_C = 40 A R_g = 10 W V_GE = 0 V/ 15V

t_d(off) − 245 − ns

Fall time tf − 180 −

Turn−off switching loss Eoff − 2.10 − mJ

DIODE CHARACTERISTIC

Forward voltage VGE = 0 V, IF = 40 A

V_GE = 0 V, I_F = 40 A, T_J = 175°C VF −

− 2.10

3.30 2.60

− V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

13 10

5 0

160

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VGE = 20 to 15 V TJ = 25°C

10 V

9 V 8 V 7 V

5 4 3 2 1 0 200

IC, COLLECTOR CURRENT (A)

V_GE = 20 to 15 V TJ = 150°C

10 V 9 V 8 V 7 V

200

IC, COLLECTOR CURRENT (A)

V_GE = 20 to 13 V T_J = −40°C

10 V

9 V 8 V

T_J = 25°C

TJ = 150°C 11 V

11 V

7 V 8 7 6

11 V

6 7 8

150

100

50

0

150

100

50

0

5 4 3 2 1

0 6 7 8

140 120 100 80 60 40 20

0 1 2 3 4 6 7 8 9 11 12

Figure 5. V_CE(sat) vs. T_J T_J, JUNCTION TEMPERATURE (°C) 4.00

VCE, COLLECTOR−EMITTER VOLTAGE (V)

75 50 0

−25

−50

−75 100 175200

IC = 80 A

IC = 40 A I_C = 20 A

25 125 150

Figure 6. Typical Capacitance VCE, COLLECTOR−EMITTER VOLTAGE (V)

100 70

50 10

100 100 1000 10,000

C, CAPACITANCE (pF)

C_ies

C_oes Cres

20 30 40 60 80 90

TJ = 25°C 200

150

100

50

0

13 V

13 V

V_CE = 20 V 250

250

250

3.50 3.00 2.50 2.00 1.50 1.00 0.50 0.00

TYPICAL CHARACTERISTICS

Figure 7. Diode Forward Characteristics VF, FORWARD VOLTAGE (V)

3.0 2.5 2.0

1.5 1.0

0.5 0

70

IF, FORWARD CURRENT (A)

T_J = 25°C

TJ = 150°C 60

50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

150 100

50 0

VGE, GATE−EMITTER VOLTAGE (V)

250 200

V_CE = 600 V V_GE = 15 V

I_C = 40 A 16

14 12 10 8 6 4 2 0

Figure 9. Switching Loss vs. Temperature TJ, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 VCE = 600 V

VGE = 15 V IC = 40 A Rg = 10 W 2.5

E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 100 100 1000

SWITCHING TIME (ns)

160 V_CE = 600 V

V_GE = 15 V I_C = 40 A Rg = 10 W

t_f t_d(off)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A) 5

SWITCHING LOSS (mJ)

6 5 4 3 2 1 0

20 35 50 65 80

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W

Eoff

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A)

SWITCHING TIME (ns)

5 20 35 50 65 80

t_f td(off)

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W 10

100 1000 2

1.5

1

0.5

0

TYPICAL CHARACTERISTICS

Figure 13. Switching Loss vs. R_g R_g, GATE RESISTOR (W)

45 35 25 15 5 4

SWITCHING LOSS (mJ)

55 65

V_CE = 600 V V_GE = 15 V T_J = 150°C IC = 40 A

75 85

E_off

V_CE = 600 V VGE = 15 V TJ = 150°C IC = 40 A

Figure 14. Switching Time vs. R_g R_g, GATE RESISTOR (W)

45 35 25 15 5 10000

SWITCHING TIME (ns)

55 65 75 85

t_f td(off)

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

450 400 350 300 250 3

SWITCHING LOSS (mJ)

500 550 600 650 700 750 800 IC = 40 A VGE = 15 V TJ = 150°C Rg = 10 W E_off

VCE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns)

1000

Figure 16. Switching Time vs. V_CE I_C = 40 A

V_GE = 15 V T_J = 150°C Rg = 10 W

td(off)

t_f

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 0.011

0.1 1 10 100 1000

50 ms 100 ms 1 ms

dc operation

Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 11

10 100 1000

V_GE = 15 V, T_C = 125°C 1000

100

10

100

10 3.5

3 2.5 2 1.5 1 0.5 0

2.5 2 1.5 1 0.5

0 250 300 350 400450 500 550 600 650 700 750 800

TYPICAL CHARACTERISTICS

140

0.01

FREQUENCY (kHz)

Ipk (A)

0.1 1 10 100 1000

120 100 80 60 40 20 0

Figure 19. Collector Current vs. Switching Frequency

T_C = 110°C

T_C = 80°C

V_CE = 600 V, T_J ≤ 175°C, Rgate = 10 W, V_GE = 0/15 V, T_case = 80°C or 110°C (as noted), D = 0.5

1500

−40

TJ, JUNCTION TEMPERATURE (°C) V(BR)CES (V)

Figure 20. Typical V_(BR)CES vs. Temperature 135 110 85 60 35 10

−15 1450

1400 1350 1300 1250 1200

0.001 0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

Figure 21. IGBT Transient Thermal Impedance PULSE TIME (sec)

R(t) (°C/W)

50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.392

Junction Case

C₁ C₂

R₁ R₂ R_n

Ci = ti/Ri

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

ti (sec) 0.000218

0.031311 0.001057 0.007527 0.004770 R_i (°C/W)

0.04597 0.000101 0.009460 0.004201 0.020965

0.007965 0.040205

0.323174 0.003094

0.083449 0.037895

0.617513 0.016194

316.228 0.000100

0.405040 0.246889

Figure 22. Test Circuit for Switching Characteristics

Figure 23. Definition of Turn On Waveform

Figure 24. Definition of Turn Off Waveform

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.