NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode

(1)

IGBT with Monolithic Free Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Features

• Extremely Efficient Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for Low Case Temperature in IH Cooker Application

• Reliable and Cost Effective Single Die Solution

• These are Pb−Free Devices

Typical Applications

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 1200 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

3015

A

Pulsed collector current, T_pulse

limited by T_Jmax ICM 60 A

Diode forward current

@ TC = 25°C

@ T^C= 100°C

IF

3015

A

Diode pulsed current, Tpulse limited

by T_Jmax IFM 60 A

Gate−emitter voltage

Transient Gate−emitter voltage (T_pulse = 5 ms, D < 0.10)

VGE $20

$25 V Power Dissipation

@ T^C = 25°C

@ TC = 100°C

PD

333166

W

Operating junction temperature

range T_J −40 to +175 °C

Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds T_SLD 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

TO−247 CASE 340AL G C

15 A, 1200 V V

_CEsat

= 2.10 V

E

_off

= 0.34 mJ

E

Device Package Shipping ORDERING INFORMATION

NGTB15N120IHRWG TO−247 30 Units / Rail http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

15N120IHR AYWWG G

E C

(2)

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case R_qJC 0.45 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 500 mA V(BR)CES 1200 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C= 15 A

V_GE = 15 V, I_C= 15 A, T_J = 175°C V_CEsat −

− 2.10

2.30 2.50

− V

Gate−emitter threshold voltage VGE = VCE, IC = 250 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited V_GE = 0 V, V_CE = 1200 V I_CES − − 0.1 mA

Gate leakage current, collector−emitter

short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 10 kHz

C_ies − 3690 − pF

Output capacitance C_oes − 85 −

Reverse transfer capacitance C_res − 69 −

Gate charge total

VCE = 600 V, IC = 15 A, VGE = 15 V

Q_g − 160 − nC

Gate to emitter charge Q_ge − 27 −

Gate to collector charge Q_gc − 70 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−off delay time TJ = 25°C

VCC = 600 V, IC = 15 A R_g = 10 W VGE = 0 V/ 15V

t_d(off) − 170 − ns

Fall time t_f − 177 −

Turn−off switching loss E_off − 0.34 − mJ

Turn−off delay time TJ = 150°C

V_CC = 600 V, I_C = 15 A R_g = 10 W V_GE = 0 V/ 15V

t_d(off) − 190 − ns

Fall time tf − 255 −

Turn−off switching loss Eoff − 0.74 − mJ

DIODE CHARACTERISTIC

Forward voltage VGE = 0 V, IF = 15 A, TJ = 25°C

V_GE = 0 V, I_F = 15 A, T_J = 175°C VF −

− 1.75

2.50 2.0

− V

(3)

TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

8 6

5 4 3 2 1 00 10 20 30 40 50 60

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

10 5

00 10 20 30 40 50 60

Figure 5. V_CE(sat) vs T_J T_J, JUNCTION TEMPERATURE (°C)

175 150 125 100 75 50 25 0 3.00

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 VGE = 10 V

to 20 V

TJ = 25°C 9 V

8 V

7 V

8 6

5 4 3 2 1 00 10 20 30 40 50 60

IC, COLLECTOR CURRENT (A)

7 T_J = 150°C 9 V

8 V

7 V

8 6

5 4 3 2 1 00 10 20 30 40 50 60

IC, COLLECTOR CURRENT (A)

7 TJ = −40°C

9 V

8 V 7 V

T_J = 25°C T_J = 150°C

200

V_GE = 10 V to 20 V

VGE = 10 V to 20 V

1 2 3 4 6 7 8 9

−75 −50 −25 2.50

2.00 1.50 1.00 0.50 0.00

I_C = 30 A IC = 15 A

IC = 5 A

Figure 6. Typical Capacitance VCE, COLLECTOR−EMITTER VOLTAGE (V)

90 80 50

40 30 20 10 0 10 100 1000 10000

C, CAPACITANCE (pF)

100 C_ies

C_oes C_res

70

1 60 T_J = 25°C

(4)

TYPICAL CHARACTERISTICS

Figure 7. Diode Forward Characteristics V_F, FORWARD VOLTAGE (V)

3.0 2.5

2.0 1.5

1.0 0.5

0 70

IF, FORWARD CURRENT (A)

TJ = 25°C

T_J = 150°C 60

50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

175 150 125 100 75 50 25 00 2 4 6 8 12 14 16

VGE, GATE−EMITTER VOLTAGE (V)

200 10

V_CE = 600 V

VCE = 600 V VGE = 15 V

IC = 15 A

Figure 9. Switching Loss vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0 0.8

SWITCHING LOSS (mJ)

160 V_CE = 600 V

V_GE = 15 V I_C = 15 A Rg = 10 W 0.7

0.6 0.5 0.4 0.3 0.2 0.1 0

E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 1000 1000

SWITCHING TIME (ns)

160 VCE = 600 V

VGE = 15 V IC = 15 A Rg = 10 W

t_f t_d(off)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A)

40 35 30 25 20 15 10 5 1.8

SWITCHING LOSS (mJ)

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W

E_off

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 100

1000

SWITCHING TIME (ns)

40 35 30 25 20 15 10 5

t_f t_d(off) VCE = 600 V

V_GE = 15 V I_C = 15 A Rg = 10 W

(5)

TYPICAL CHARACTERISTICS

Figure 13. Switching Loss vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING LOSS (mJ)

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

VCE = 600 V V_GE = 15 V T_J = 150°C I_C = 15 A E_off

55 65 75 85

Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING TIME (ns)

1000

55 65 75 85

100

tf

t_d(off)

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400 350

SWITCHING LOSS (mJ)

1.0

650 700 750 800 0.9

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1

0 600

E_off

V_CE = 600 V TJ = 150°C IC = 15 A Rg = 10 W

Figure 16. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400

350 600 650 700 750 800

SWITCHING TIME (ns)

1000

100

VCE = 600 V T_J = 150°C I_C = 15 A Rg = 10 W

tf

t_d(off)

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 0.011

0.1 1 10 100 1000

50 ms 100 ms dc operation 1 ms Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1 10 100 1000

V_GE = 15 V, T_C = 125°C

1000 100

10 1

(6)

TYPICAL CHARACTERISTICS

70

0.01

FREQUENCY (kHz)

Ipk (A)

0.1 1 10 100 1000

Figure 19. Collector Current vs. Switching Frequency

T_C = 110°C T_C = 80°C 60

50 40 30 20 10 0

V_CE = 600 V, T_J ≤ 175°C, Rgate = 10 W, V_GE = 0/15 V, T_case = 80°C or 110°C (as noted), D = 0.5

1550

−40

T_J, JUNCTION TEMPERATURE (°C) V(BR)CES (V)

Figure 20. Typical V_(BR)CES vs. Temperature 135 110 85 60 35 10

−15 1500

1450 1400 1350 1300 1250 1200

Figure 21. IGBT Transient Thermal Impedance ON−PULSE WIDTH (s)

1 0.1

0.01 0.0001

1E−06 1

SQUARE−WAVE PEAK R(t) (°C/W)

1E−05 50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJA = 0.446

Junction

C₁ C₂ R₁ R₂

Duty Factor = t1/t2

Peak TJ = PDM x Z_qJC + TC

Case

C_n R_n 0.1

0.01

0.001

0.0001

0.001

Ri (°C/W) Ci (J/°C) 0.08113 0.118279 0.115034 0.130170 0.001355

0.003898 0.008455 0.027490 0.076823 73.79876

(7)

Figure 22. Test Circuit for Switching Characteristics

(8)

Figure 23. Definition of Turn On Waveform

(9)

Figure 24. Definition of Turn Off Waveform

(10)

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

(11)

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION