NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode

IGBT with Monolithic Free Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications.

Features

• Extremely Efficient Trench with Fieldstop Technology

• 1350 V Breakdown Voltage

• Optimized for Low Losses in IH Cooker Application

• Reliable and Cost Effective Single Die Solution

• These are Pb−Free Devices

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage @

T_J = 25°C VCES 1350 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

6030

A

Pulsed collector current, T_pulse limited by TJmax 10 ms pulse, V_GE = 15 V

ICM 120 A

Diode forward current

@ TC = 25°C

@ T^C = 100°C

IF

6030

A

Diode pulsed current, T_pulse limited by T_Jmax 10 ms pulse,

V_GE = 0 V

IFM 120 A

Gate−emitter voltage

Transient Gate−emitter Voltage (T_pulse = 5 ms, D < 0.10)

VGE $20

±25 V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

394197

W

Operating junction temperature

range TJ −40 to +175 °C

Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds T_SLD 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

TO−247 CASE 340AL G C

30 A, 1350 V V

= 2.30 V

E

= 0.85 mJ

E

Device Package Shipping ORDERING INFORMATION

http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

30N135IHR AYWWG G

E C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case R_qJC 0.38 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 5 mA V(BR)CES 1350 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 30 A

V_GE = 15 V, I_C = 30 A, T_J = 175°C V_CEsat −

− 2.30

2.50 2.65

− V

Gate−emitter threshold voltage VGE = VCE, IC = 250 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited V_GE = 0 V, V_CE = 1350 V

VGE = 0 V, VCE = 1350 V, TJ = 175°C I_CES −

− −

− 0.5

2.0 mA

Gate leakage current, collector−emitter

short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 5290 − pF

Output capacitance C_oes − 124 −

Reverse transfer capacitance C_res − 100 −

Gate charge total

VCE = 600 V, IC = 30 A, VGE = 15 V

Q_g − 234 − nC

Gate to emitter charge Q_ge − 39 −

Gate to collector charge Q_gc − 105 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−off delay time TJ = 25°C

VCC = 600 V, IC = 30 A R_g = 10 W VGE = 0 V/ 15V

t_d(off) − 250 − ns

Fall time t_f − 150 −

Turn−off switching loss E_off − 0.85 − mJ

Turn−off delay time TJ = 150°C

V_CC = 600 V, I_C = 30 A R_g = 10 W V_GE = 0 V/ 15V

t_d(off) − 265 − ns

Fall time tf − 225 −

Turn−off switching loss Eoff − 1.90 − mJ

DIODE CHARACTERISTIC

Forward voltage VGE = 0 V, IF = 30 A

V_GE = 0 V, I_F = 30 A, T_J = 175°C VF −

− 2.10

3.20 2.40

− V

TYPICAL CHARACTERISTICS

250

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

13 10

5 0

160

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VGE = 20 to 15 V T_J = 25°C

10 V

9 V 8 V 7 V

5 4 3 2 1 0 250

IC, COLLECTOR CURRENT (A)

V_GE = 20 to 15 V T_J = 150°C

10 V 9 V 8 V 7 V

IC, COLLECTOR CURRENT (A)

V_GE = 20 to 15 V

T_J = −40°C

10 V

9 V 8 V

T_J = 25°C

TJ = 150°C 11 V

11 V

7 V 8 7 6

11 V

6 7 8

5 4 3 2 1

0 6 7 8

140 120 100 80 60 40 20

0 1 2 3 4 6 7 8 9 11 12

Figure 5. V_CE(sat) vs. T_J TJ, JUNCTION TEMPERATURE (°C) 3.00

VCE, COLLECTOR−EMITTER VOLTAGE (V)

75 50 0

−25

−50

−75 100 175200

I_C = 60 A IC = 30 A

I_C = 15 A 2.50

2.00 1.50 1.00 0.50

0.00 25 125 150

Figure 6. Typical Capacitance V_CE, COLLECTOR−EMITTER VOLTAGE (V)

100 70

50 10

0 100000

C, CAPACITANCE (pF)

C_ies

C_oes C_res

20 30 40 60 80 90

T_J = 25°C 200

150

100 50

0

13 V

200 13 V

150

100 50

0

13 V 250

200 150

100 50

0

3.50 4.00

10000

1000

100

10 1

TYPICAL CHARACTERISTICS

Figure 7. Diode Forward Characteristics VF, FORWARD VOLTAGE (V)

3.0 2.5 2.0 1.5 1.0 0.5 0 70

IF, FORWARD CURRENT (A)

T_J = 25°C

T_J = 150°C 60

50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

150 100

50 0

VGE, GATE−EMITTER VOLTAGE (V)

250 200

V_CE = 600 V V_GE = 15 V

I_C = 30 A 16

14 12 10 8 6 4 2 3.5 4.0 0

Figure 9. Switching Loss vs. Temperature TJ, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 V_CE = 600 V V_GE = 15 V I_C = 30 A Rg = 10 W E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

80 60

40 20

100 100 1000

SWITCHING TIME (ns) V_CE = 600 V

V_GE = 15 V I_C = 30 A Rg = 10 W

t_f t_d(off)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A) 5

SWITCHING LOSS (mJ)

6 5 4 3 2 1 0

20 35 50 65 80

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W

E_off

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 1000

SWITCHING TIME (ns)

5 20 35 50 65 80

t_f t_d(off)

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W 2.5

7 2 1.5 1

0.5 0

100

10

TYPICAL CHARACTERISTICS

Figure 13. Switching Loss vs. R_g R_g, GATE RESISTOR (W)

45 35 25 15 5 3

SWITCHING LOSS (mJ)

55 65

V_CE = 600 V V_GE = 15 V T_J = 150°C IC = 30 A

75 85

E_off

V_CE = 600 V VGE = 15 V TJ = 150°C IC = 30 A

Figure 14. Switching Time vs. R_g R_g, GATE RESISTOR (W)

45 35 25 15 5 10000

SWITCHING TIME (ns)

55 65 75 85

1000

100

10

tf

t_d(off)

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

450 400 350 300 250

SWITCHING LOSS (mJ)

500 550 600 650 700 750 800 IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W E_off

VCE, COLLECTOR−EMITTER VOLTAGE (V) 550

500 450 300

250

SWITCHING TIME (ns)

600 650 750 800 1000

100

10 350 400

Figure 16. Switching Time vs. V_CE I_C = 30 A

V_GE = 15 V T_J = 150°C Rg = 10 W

t_d(off) t_f

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 0.011

0.1 1 10 100 1000

50 ms 100 ms 1 ms

dc operation

Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 11

10 100 1000

V_GE = 15 V, T_C = 125°C

700 2.5

2 1.5 1 0.5 0

2.5 2

1.5 1

0.5 0

TYPICAL CHARACTERISTICS

140

0.01

FREQUENCY (kHz)

Ipk (A)

0.1 1 10 100 1000

120 100 80 60 40 20 0

Figure 19. Collector Current vs. Switching Frequency

T_C = 110°C

T_C = 80°C

V_CE = 600 V, T_J ≤ 175°C, Rgate = 10 W, V_GE = 0/15 V, T_case = 80°C or 110°C (as noted), D = 0.5

1650

−40

TJ, JUNCTION TEMPERATURE (°C) V(BR)CES (V)

Figure 20. Typical V_(BR)CES vs. Temperature 135 110 85 60 35 10

−15 1600

1550 1500 1450 1400 1350 1300

0.001 0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

Figure 21. IGBT Transient Thermal Impedance PULSE TIME (sec)

R(t) (°C/W)

50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.385

Junction Case

C₁ C₂

R₁ R₂ R_n

Ci = ti/Ri

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

ti (sec) 0.000174 0.025884 0.001398 0.002971 0.006046 R_i (°C/W) 0.005757 0.000122 0.007153 0.010643 0.016539

0.006505 0.048615

0.051225 0.019522

0.198582 0.015924

0.193115 0.051783

1.23097 0.025689

0.553364 0.180713

Figure 22. Test Circuit for Switching Characteristics

Figure 23. Definition of Turn On Waveform

Figure 24. Definition of Turn Off Waveform

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

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