宇宙航空研究開発機構契約報告
JAXA Contract Report
最新デバイスの耐放射線性強化技術に関する検討委員会
平成19年度 成果報告書
２００８年８月
August２００８Japan Aerospace Exploration Agency
宇宙航空研究開発機構
作成元 HIREC株式会社
Prepared by
1 ߪߓߦ... 1
2 ᬺോ䈱⋡⊛... 1
3 ᬺോታᣉ⚿ᨐ... 1
3.1 ⠴✢ᕈᒝൻᛛⴚ... 1
3.1.1 ⠴✢ᒝൻᛛⴚߦ㑐ߔࠆᬌ⸛᧚ᢱߩ⺞ᩏ... 1
3.1.2 ᬌ⸛ᆔຬળߩ⸳⟎... 4
3.1.3 ᆔຬળᵴേ... 5
3.1.4 ⠴✢ᒝൻᛛⴚ... 6
3.1.4.1 ඨዉ⚛ሶߦኻߔࠆ✢ᾖലᨐߩേะ... 6
3.1.4.2 ⺞ᩏᢥ₂... 6
3.1.4.3 ߹ߣ... 24
3.1.4.4 ෳ⠨ᢥ₂... 24
3.2 ᬌ⸛ᢥ₂... 26
3.2.1 䊂䉳䉺䊦CMOS䊤䉟䊑䊤䊥䈱ὑ䈱વ៝SET⹏ଔᣇᴺ... 26
3.2.2 䉲䊮䉫䊦䊶䉟䊔䊮䊃䊶䊃䊤䊮䉳䉢䊮䊃䈱䊁䉪䊉䊨䉳䊷䊉䊷䊄䈮䉋䉎ะ... 31
3.2.3 ᭂ⭯䊗䊂䉞䉲䊮䉫䊦䉭䊷䊃䇮䉻䊑䊦䉭䊷䊃䊂䊋䉟䉴䈮䈍䈔䉎㊀䉟䉥䊮ᾖ䈱㊂ሶലᨐ䈱⎇ⓥ ... 35
3.2.4 䊂䉳䉺䊦࿁〝ਛ䈱䉲䊮䉫䊦䊶䉟䊔䊮䊃䊶䊃䊤䊮䉳䉢䊮䊃વ䈮䈍䈔䉎䊈䉧䊁䉞䊑䊶䊐䉞䊷䊄䊋䉾䉪ലᨐ ... 42
3.2.5 䉲䊮䉫䊦䉟䊔䊮䊃⽎䈮࿃䈜䉎䊂䊷䉺䉣䊤䊷䈱䊉䊷䊙䊥䊷䉥䊐䊃䊤䊮䉳䉴䉺䉕䈚䈢વ ... 48
3.2.6 䊌䊪䊷MOSFET䈱䉲䊮䉫䊦䉟䊔䊮䊃䊋䊷䊮䉝䉡䊃䈫䉝䊋䊤䊮䉲䉢․ᕈ... 54
3.2.7㩷 ᐢ▸䈭䉣䊈䊦䉩䊷㗔ၞ䈱ਛᕈሶ䉕↪䈇䈢䉲䊮䉫䊦䉟䊔䊮䊃⹜㛎䈫ᮡḰ⹜㛎䈫䈱㑐ㅪ... 58
3.2.8 65nm CMOS ⠴✢RAM 䈱㱍✢䈮䉋䉎ᄙ㊀䉶䊦䉝䉾䊒䉶䉾䊃䈱⎇ⓥ... 62
3.2.9 䊌䉟䊒䊤䉟䊮ᒻA-D䉮䊮䊋䊷䉺䈱䉲䊮䉫䊦䉟䊔䊮䊃⠴ᕈ䈫䈠䈱ᒝൻ... 67
3.2.10 AlGaN/GaN HFET䊂䊋䉟䉴䈱䊒䊨䊃䊮䈍䉋䈶㊀☸ሶᾖലᨐ... 71
3.2.11㩷ᦨᣂ㩷᳃↢2Gbit NANDဳࡈ࠶ࠪࡘࡔࡕߩSEE߅ࠃ߮TID․ᕈ... 77
3.2.12 ✢ᾖ䈮䉋䉎FG䊜䊝䊥․ᕈᄌൻ... 86
3.2.13㩷ࠪࠦࡦਛߩૐࠛࡀ࡞ࠡࠗࠝࡦ៊ᄬࠍ⹏ଔߔࠆߚߩᣂߒಽ㈩ଥᢙ⸘▚... 92
4 ᬌ⸛ᆔຬળߩㆇ༡... 101
㧨ᷝઃ㧪
1ߪߓߦ
ᧄᦠ䈲䇮JAXAᲚ䈱ᬺോᆔ⸤ JX-PSPC-215089䇸ᐔᚑ19ᐕᐲ㩷 ㇱຠ䊒䊨䉫䊤䊛ᡰេ㩷 ⺞㆐᭽
ᦠ䋨ᆔ⸤䋩䇹䈱4.2㗄(4)䈮ၮ䈨䈇䈩HIRECᩣᑼળ␠䈏ታᣉ䈚䈢䇸ᦨᣂ䊂䊋䉟䉴䈱⠴✢ᕈᒝൻᛛ
ⴚ䈮㑐䈜䉎ᬌ⸛ᆔຬળ䈱㐿ᡰេ䇹䈱ᬺോ⚿ᨐ䈮䈧䈇䈩䉁䈫䉄䈢䉅䈱䈪䈅䉎䇯
2ᬺോ䈱⋡⊛
ᦨవ┵ᛛⴚࠍ↪ߚㇱຠߪޔ㜞ᯏ⢻ൻ㧛㜞㓸Ⓧൻߩⷐ᳞ߦ㓸Ⓧ࿁〝ߩᓸ⚦ൻ߇ㅴࠎߢ ࠆ߇ޔߘߩ৻ᣇߢޔ✢ߦࠃࠆᓇ㗀߽ฃߌ߿ߔߊߥߞߡ߈ߡ߅ࠅޔ✢ߦࠃߞߡ⊒↢ߔࠆ ᭽ޘߥ⽎߽ᓥ᧪ߩ߽ߩߣ⇣ߥߞߡ߈ߡࠆߣ⠨߃ࠄࠇࠆޕ߹ߚޔᓥ᧪ߩ⠴✢ᕈ⹜㛎ᣇᴺ ߦߟߡ߽ޔㆡᱜߦ್ᢿߢ߈ࠆ⹜㛎ᣇᴺࠍ⺞ᩏߒ⏕┙ߒߡߊᔅⷐ߇ࠆޕߎࠇࠄߦߟߡ ⼂⠪ߢ᭴ᚑߐࠇࠆᬌ⸛ᆔຬળࠍ⸳⟎ߒޔ࿖ౝᄖߩᢥ₂╬ࠍ⺞ᩏߒߚߢ⹜㛎ᣇᴺࠍߚ⠴ ✢ᕈᒝൻᛛⴚേะߦ㑐ߔࠆ⺞ᩏᬌ⸛ࠍⴕߞߚޕ
3ᬺോታᣉ⚿ᨐ
3.1⠴✢ᕈᒝൻᛛⴚ
3.1.1⠴✢ᒝൻᛛⴚߦ㑐ߔࠆᬌ⸛᧚ᢱߩ⺞ᩏ
ㄭᐕ䈱ඨዉ䊂䊋䉟䉴䈱ᓸ⚦ൻ䇮㜞ኒᐲൻ䈶㜞ᯏ⢻ൻ䈲⋡ⷡ䈚䈇䉅䈱䈏䈅䉎䇯․䈮↪ඨ
ዉ䊂䊋䉟䉴䉕ቝቮ↪ㇱຠ䈮ォ↪䈜䉎COTS(Commercial off the Shelf)䈮㑐䈜䉎ᬌ⸛䈲᰷☨䈱
ቝቮᯏ㑐䈮䈍䈇䈩㐳ᐕታᣉ䈘䉏䈩䈇䉎䇯COTS㗴䈮㑐䈚䈩䈲䇮↪ㇱຠ䈫ቝቮ↪ㇱຠ䈱ቯ⊛
䈭㆑䈇䈫䈭䉎⠴✢ᕈ䉕ㆱ䈔䈩⼏⺰䈜䉎䈖䈫䈲䈪䈐䈭䈇䇯䈖䈱䈢䉄䇮ฦ࿖䈱ቝቮᯏ㑐䈪䈲䊒䊨䉶䉴
䉇᭴ㅧ䈮㑐䈚䈩ᦨవ┵ᛛⴚ䉕⹏ଔ䈚䈩䈇䉎䇯䉁䈢䇮ᓸ⚦ൻ╬䈮䈦䈩ᣂ䈢䈮⏕䈘䉏䈢⽎䈮㑐䈚䈩
䉅ቇળ╬䈮䈍䈇䈩ᵴ⊒䈮⼏⺰䈘䉏䈩䈇䉎䇯䈖䈱䉋䈉䈭ᛛⴚ㕟ᣂ䈏ㅴ䉃ਛ䇮䈇䈎䈮ඨዉ䊂䊋䉟䉴䈱⠴
✢ᕈ䉕ㆡᱜ䈮⹏ଔ䈜䉎䈎䈏䇮㊀ⷐ䈭⺖㗴䈫䈭䈦䈩䈇䉎䇯
䈖䉏䉌䈱⢛᥊䉕〯䉁䈋䈩䇮ᧄᐕᐲ䈱⠴✢ᕈᒝൻᛛⴚ䈮㑐䈜䉎ᬌ⸛᧚ᢱ䈱⺞ᩏ䈲䇮ኻ⽎䊂䊋䉟
䉴䈫䈚䈩MOS䉻䉟䉥䊷䊄⚛ሶ䇮SOI⚛ሶ䇮䊥䊆䉝䊋䉟䊘䊷䊤IC䇮䊂䉞䊷䊒䉰䊑䊚䉪䊨䊮䊶䊂䉳䉺䊦䊨䉳䉾
䉪⚛ሶ䇮SRAM䇮FPGA䇮䊖䊃䉦䊒䊤䈮䈧䈇䈩䉕䇮⽎䈫䈚䈩䊃䊷䉺䊦䊄䊷䉵⽎䋨ELDRS 䉕䉃䋩䇮䉲
䊮䉫䊦䊶䉟䊔䊮䊃⽎䇮㓁ሶ䊶ਛᕈሶᩭᔕ䉲䊮䉫䊦䊶䉟䊔䊮䊃䇮ᄌ៊்ലᨐ䈮䈧䈇䈩䈱ᖱႎ䉕⺞ᩏ
䈚䈢䇯
䈠䈱⚿ᨐ䇮ඨዉ䊂䊋䉟䉴䈮ኻ䈜䉎⠴✢ᕈ䉕⎇ⓥ䈜䉎ቇળ䈪䈲⇇ᦨ㜞ፄ䈱 IEEE
Nuclear and Space Radiation Effects Conference(NSREC:2006ᐕ7☨࿖㩷 䊐䊨䊥䉻ᎺPonte
Vedra Beach䈪㐿)䈪⊒䈘䉏䈢⺰ᢥ䈎䉌13ઙ䉕ᬌ⸛᧚ᢱ䈫䈚䈩ㆬቯ䈚䈢䇯
3.1.1-1㩷 ᬌ⸛᧚ᢱ䈱ᢥ₂৻ⷩ
ኻᔕ䈱ᧄᦠ㗄⇟
ಽ㘃 ᢥ ₂ ฬ
ౖ(1)䍫䍽䍎䍚䍼ᢙ
䊂䉳䉺䊦CMOS䊤䉟䊑䊤䊥䈱ὑ䈱વ៝SET⹏ଔᣇᴺ 3.2.1㗄
SET
Propagating SET Characterization Technique for Digital CMOS
Libraries p3472
䉲䊮䉫䊦䊶䉟䊔䊮䊃䊶䊃䊤䊮䉳䉢䊮䊃䈱䊁䉪䊉䊨䉳䊷䊉䊷䊄䈮䉋䉎ะ 3.2.2㗄
SET
Digital Single Event Transient Trends With Technology Node
Scaling p3462
ᭂ⭯䊗䊂䉞䉲䊮䉫䊦䉭䊷䊃䇮䉻䊑䊦䉭䊷䊃䊂䊋䉟䉴䈮䈍䈔䉎㊀䉟䉥䊮ᾖ䈱
㊂ሶലᨐ䈱⎇ⓥ 3.2.3㗄
SET
Investigation of Quantum Effects in Ultra-Thin Body Single- and
Double-Gate Devices Submitted to Heavy Ion Irradiation p3363
䊂䉳䉺䊦࿁〝ਛ䈱䉲䊮䉫䊦䊶䉟䊔䊮䊃䊶䊃䊤䊮䉳䉢䊮䊃વ䈮䈍䈔䉎䊈䉧䊁䉞䊑䊶
䊐䉞䊷䊄䊋䉾䉪ലᨐ 3.2.4㗄
SET
The Effect of Negative Feedback on Single Event Transient
Propagation in Digital Circuits p3285
䉲䊮䉫䊦䉟䊔䊮䊃⽎䈮࿃䈜䉎䊂䊷䉺䉣䊤䊷䈱䊉䊷䊙䊥䊷䉥䊐䊃䊤䊮䉳䉴䉺
䉕䈚䈢વ 3.2.5㗄
SET
Single Event-Induced Error Propagation Through Nominally-off
Transmission Gates p3558
䊌䊪䊷MOSFET䈱䉲䊮䉫䊦䉟䊔䊮䊃䊋䊷䊮䉝䉡䊃䈫䉝䊋䊤䊮䉲䉢․ᕈ 3.2.6㗄
SEB
Single-Event Burnout and Avalanche Characteristics of Power
DMOSFETs p3379
㩷 ᐢ▸䈭䉣䊈䊦䉩䊷㗔ၞ䈱ਛᕈሶ䉕↪䈇䈢䉲䊮䉫䊦䉟䊔䊮䊃⹜㛎䈫ᮡḰ⹜㛎
䈫䈱㑐ㅪ 3.2.7㗄
SEU
Neutron-Induced Single Event Effects Testing Across a Wide Range
of Energies and Facilities and Implications for Standards p3596
65nm CMOS ⠴✢RAM 䈱㱍✢䈮䉋䉎ᄙ㊀䉶䊦䉝䉾䊒䉶䉾䊃䈱⎇ⓥ 3.2.8㗄
SEU
Alpha-Induced Multiple Cell Upsets in Standard and Radiation
Hardened SRAMs Manufactured in a 65 nm CMOS Technology p3479
䊌䉟䊒䊤䉟䊮ᒻA-D䉮䊮䊋䊷䉺䈱䉲䊮䉫䊦䉟䊔䊮䊃⠴ᕈ䈫䈠䈱ᒝൻ 3.2.9㗄
SEU
Single-Event Sensitivity and Hardening of a Pipelined
Analog-to-Digital Converter p3532
AlGaN/GaN HFET䊂䊋䉟䉴䈱䊒䊨䊃䊮䈍䉋䈶㊀☸ሶᾖലᨐ 3.2.10㗄
TID
Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET
Devices p3661
㩷ᦨᣂ㩷᳃↢2Gbit NANDဳࡈ࠶ࠪࡘࡔࡕߩSEE߅ࠃ߮TID․ᕈ 3.2.11㗄
TID
SEE and TID Characterization of an Advanced Commercial 2Gbit
ኻᔕ䈱ᧄᦠ㗄⇟
ಽ㘃 ᢥ ₂ ฬ
ౖ(1)䍫䍽䍎䍚䍼ᢙ
✢ᾖ䈮䉋䉎FG䊜䊝䊥․ᕈᄌൻ 3.2.12㗄
TID
Variability in FG Memories Performance After Irradiation p3349
㩷ࠪࠦࡦਛߩૐࠛࡀ࡞ࠡࠗࠝࡦ៊ᄬࠍ⹏ଔߔࠆߚߩᣂߒಽ㈩ଥ
ᢙ⸘▚ 3.2.13㗄
NIEL
New Partition Factor Calculations for Evaluating the Damage of
Low Energy Ions in Silicon p3667
3.1.2ᬌ⸛ᆔຬળߩ⸳⟎
3.1.1㗄ߢㆬቯߒߚᬌ⸛᧚ᢱࠍᬌ⸛ߔࠆߚߦޔᄢቇޔ⊛⎇ⓥᯏ㑐ޔડᬺ╬ߩቇ⼂⼂⠪
߆ࠄ᭴ᚑߐࠇࠆᬌ⸛ᆔຬળࠍ⚵❱ߒޔฦᆔຬߦᆔབྷߒߚޕᆔབྷߒߚᆔຬฬߣᚲዻޔᓎ⡯ࠍ
3.1.2-1ߦ␜ߔޕ
3.1.2-1 ᬌ⸛ᆔຬ৻ⷩ㧔ᢘ⒓⇛㧕
ಽ ᆔຬฬ ᚲዻฬ ᓎ⡯
1 㘈 ᄢ㩷 ৻ഞ ᣣᧄᄢቇ 㕖Ᏹൕ⻠Ꮷ
2 ᆔຬ㐳 દㇱ㩷 ⧷ผ 䋨ᩣ䋩ᣣ┙ᚲ㩷 ↢↥ᛛⴚ⎇ⓥᚲ ਥ▤⎇ⓥຬ
3 ᆔຬ㐳 ⍫᎑㩷 ቁᄥ㇢ ਃ⪉㔚ᯏ(ᩣ)㩷 㜞ᵄశ䊂䊋䉟䉴ᚲ ኾછ
4 ᆔຬ ⍹㩷 ⨃ ਃ⪉㊀Ꮏᬺ(ᩣ)㩷 ฬฎደ⺃ዉផㅴ䉲䉴䊁䊛ᚲ ਥછ
5 ᆔຬ ⮮ፉ㩷 ⋥ੱ ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷(ᩣ) 䍭䍦䍎䍚䍼䍊䍎
6 ᆔຬ ⍹㩷 ၮኡ NEC᧲⦼䉴䊕䊷䉴䉲䉴䊁䊛(ᩣ) ਥછ
7 ᆔຬ 㜞ᯅ㩷 ⧐ᶈ ᣣᧄᄢቇ ಎᢎ
8 ᆔຬ ᐔየ㩷 ᢅ㓶 ⁛┙ⴕᴺੱ㩷 ᣣᧄේሶജ⎇ⓥ㐿⊒ᯏ᭴ ᛛⴚਥᐙ
9 ᆔຬ ⮮↰㩷 ታ ᴺᄢቇ છ⻠Ꮷ
10 ᆔຬ ဝጊ㩷 ㅘ 㜞䉣䊈䊦䉩䊷ടㅦེ⎇ⓥᯏ᭴ ⻠Ꮷ
11 ᆔຬ ᷓ↰㩷 ቁม 䉂䈝䈾ᖱႎ✚⎇䋨ᩣ䋩 䍭䍦䍎䍚䍼䍊䍎
13 ᆔຬ ศ㩷 ዏ㇢ 䋨ᩣ䋩᧲⦼㩷 䉶䊚䉮䊮䉻䉪䉺䊷␠ ෳ
14 ᆔຬ ⍫㩷 ᄦ 䋨ᩣ䋩ᣣ┙ᚲ㩷 ↢↥ᛛⴚ⎇ⓥᚲ ਥછ⎇ⓥຬ
3.1.3ᆔຬળᵴേ
3.1.1㗄ߢㆬቯߒߚᬌ⸛᧚ᢱߪޔฦᆔຬߦഀࠅᒰߡᬌ⸛ࠍଐ㗬ߒߚޕฦᆔຬߩႎ๔ߔࠆᬌ⸛
ౝኈߦߟߡᒰᆔຬળߦߡ⸛⼏ߒޔߘࠇࠄࠍ⼏㍳ߣߒߡ߹ߣߚޕ
╙2࿁ߢߪޔോዪࠃࠅ2007ᐕ7ߦ㐿ߐࠇߚNSRECߩ࠻ࡇ࠶ࠢࠍႎ๔ߒᦨᣂᖱႎߩឭ
ଏࠍⴕߞߚޕߐࠄߦޔ╙3࿁ߢߪޔJAXAᑝἑᬌᩏຬࠃࠅޔ2006ᐕ㐿ߩNSREC Award⺰ᢥ
ߩ⚫ࠍⴕߞߚ㧔 3.1.3-1㧕ޕ╙ 5࿁ᆔຬળ㧔ᦨ⚳࿁㧕ߢߪޔદㇱᆔຬ㐳㧔ᣣ┙㧕߆ࠄޔᧄᆔ
ຬળࠍ⛔ߒߡޔᧄᐕᐲߩ⠴✢ಽ㊁ߩേะߦߟߡ߹ߣࠍႎ๔ߒߚޕ߹ߚޔോዪࠃࠅᒰ ᆔຬળߩㆇ༡ߦߟߡႎ๔ߒߚޕ
ᆔຬળߩ⼏㗴╬ࠍ 3.1.3-2ޔ⼏㍳ࠍᷝઃ6-2ޔ㈩ઃ⾗ᢱࠍᷝઃ6-3ߦᷝઃߔࠆ
3.1.3-1 2006ᐕ㐿ߩNSRECߦ߅ߌࠆAward⺰ᢥ
⺰ᢥ࠲ࠗ࠻࡞ ⊒⠪
╙ 3 ࿁ ᆔຬળ
Statistical Analysis of the Charge Collected in SOI and Bulk Device Under Heavy Ion and Proton Irradiation-Implications for Digital SETs
JAXA ᑝἑᲚ
3.1.3-2 ᆔຬળߩᣣᤨޔ⼏㗴ߥߤ
࿁ᢙ ᣣᤨ䇮⼏㗴䈭䈬
╙1࿁ 㐿ᣣᤨ䋺2007ᐕ629ᣣ䋨㊄䋩
㐿႐ᚲ䋺HIREC䋨ᩣ䋩㩷 Ꮉፒᬺᚲ
ਥ䈭⼏㗴䋺ᧄᐕᐲᬌ⸛ౝኈ䈱ⷐ䇮ോዪ䈮䉋䉎⺰ᢥ⊒䈶⸛⼏
╙2࿁ 㐿ᣣᤨ䋺2007ᐕ928ᣣ䋨㊄䋩
㐿႐ᚲ䋺HIREC䋨ᩣ䋩㩷 Ꮉፒᬺᚲ
ਥ䈭⼏㗴䋺ฦᆔຬᜂᒰ⺰ᢥ䈱⊒䈶⸛⼏䋨2ઙ䋩
2007ᐕRADECSႎ๔
2007ᐕNSRECႎ๔
╙3࿁ 㐿ᣣᤨ䋺2007ᐕ1026ᣣ䋨㊄䋩
㐿႐ᚲ䋺HIREC䋨ᩣ䋩㩷 Ꮉፒᬺᚲ
ਥ䈭⼏㗴䋺ฦᆔຬᜂᒰ⺰ᢥ䈱⊒䈶⸛⼏䋨4ઙ䋩
2006ᐕNSREC Award⺰ᢥ䈱⚫
╙4࿁ 㐿ᣣᤨ䋺2007ᐕ1130ᣣ䋨㊄䋩
㐿႐ᚲ䋺HIREC䋨ᩣ䋩㩷 Ꮉፒᬺᚲ
ਥ䈭⼏㗴䋺ฦᆔຬᜂᒰ⺰ᢥ䈱⊒䈶⸛⼏䋨5ઙ䋩
╙5࿁ 㐿ᣣᤨ䋺2008ᐕ222ᣣ䋨㊄䋩
㐿႐ᚲ䋺HIREC䋨ᩣ䋩㩷 Ꮉፒᬺᚲ
ਥ䈭⼏㗴䋺ฦᆔຬᜂᒰ⺰ᢥ䈱⊒䈶⸛⼏䋨1ઙ䋩
䊶ᚑᨐႎ๔ળ 䊶ᆔຬળㆇ༡䈱ႎ๔
3.1.4⠴✢ᒝൻᛛⴚ
3.1.4.1 ඨዉ⚛ሶߦኻߔࠆ✢ᾖലᨐߩേะ
⚛ሶ䈱ᓸ⚦ൻ䈏ㅴ䉃ਛ䈪䇮㓸Ⓧ࿁〝䈱㜞ኒᐲൻ䇮ᄢⷙᮨൻ䈏ㅴ䉖䈪䈇䉎䇯䈖䉏䉁䈪䈲ቝቮ↪ඨ
ዉ⚛ሶ䈪㊀ⷐ䈭㗴ὐ䈪䈅䈦䈢㓸Ⓧ࿁〝䈱✢䈮䉋䉎ഠൻ䇮⺋േ䈏䇮䈪䉒䉏䉎⚛ሶ
䈮䈍䈇䈩䉅䇮䈠䈱㗴䈏㗼ൻ䈚䈩䈐䈩䈇䉎䇯䈘䉌䈮ඨዉ⚛ሶ䈮↪䈘䉏䉎᧚ᢱ䉅ᄙጘ䈮ਗ਼䈦䈩
䈍䉍䇮䈠䉏䉌䉕ቝቮ✢ⅣႺ䈪↪䈇䉎႐ว䈱㗴䉕䉌䈎䈮䈜䉎ข䉍⚵䉂䉅ⴕ䉒䉏䈩䈇䉎䇯䉁䈢䇮
⠴✢ᒝൻᛛⴚ䉅䇮᧚ᢱ䇮⚛ሶ᭴ㅧ䇮࿁〝⊛䈭㕙䈎䉌ᄙ䈒䈱ឭ᩺䈏䈭䈘䉏䈩䈇䉎䇯ᐕᐲ䈲䈖䈱
䉋䈉䈭⁁ᴫ䈱ਛ䈎䉌䇮2006ᐕ7䈮☨࿖䊐䊨䊥䉻䈪㐿䈘䉏䈢䇮IEEE(The Institute of Electrical
and Electronics Engineers)䈱2006 NSREC (Nuclear and Space Radiation Conference,
Ponte Vedra Beach, FL, July 17-21)䈪⊒䈘䉏䈢⺰ᢥ䈪IEEE Trans. Nuc. Sci., Vol. 53,
No.6 䈮ឝタ䈘䉏䈢䉅䈱䈎䉌䇮㊀ⷐ䈫ᕁ䉒䉏䉎䉅䈱䉕ㆬᛯ䈚䈩⺞ᩏ䈚䈢䇯
3.1.4.2 ⺞ᩏᢥ₂
ᐕᐲ䈱⺞ᩏᢥ₂䈲ᰴ䈱13ઙ䈪䈅䉎䇯
3.1.4-1 ⺞ᩏᢥ₂
㗄⇟ ಽ㘃 ⪺㩷 㩷 㩷 㩷 㩷 ⠪ 䉺㩷 䉟㩷 䊃㩷 䊦
3.2.1 SET
M. P. Baze, J. Wert, J. W. Clement, M. G. Hubert, A. Witulski, O. A. Amusan, L. Massengill, and D. McMorrow
Propagating SET Characterization Technique for Digital CMOS Libraries
3.2.2 SET J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger
Digital Single Event Transient Trends With Technology Node Scaling
3.2.3 SET
D. Munteanu, V. Ferlet-Cavrois, J. L. Autran, P. Paillet, J. Baggio, O. Faynot, C. Jahan, and L. Tosti
Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation
3.2.4 SET
B. Narasimham, B. L. Bhuva, W. T. Holman, R. D. Schrimpf, L. W. Massengill, A. F. Witulski, and W. H. Robinson
The Effect of Negative Feedback on Single Event Transient Propagation in Digital Circuits
3.2.5 SET
J. M. Hutson, V. Ramachandran, B. L. Bhuva, X. Zhu, R. D. Schrimpf, O. A. Amusan, and L. M. Massengill
Single Event-Induced Error Propagation Through Nominally-off Transmission Gates
3.2.6 SEB S. Liu, M. Boden, D. A. Girdhar, and J. L. Titus
Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs
3.2.7 SEU C. Dyer, A. Hands, K. Ford, A. Frydland, and P. Truscott
Neutron-Induced Single Event Effects Testing Across a Wide Range of Energies and Facilities and Implications for Standards .
3.2.8 SEU G. Gasiot, D. Giot, and P. Roche
㗄⇟ ಽ㘃 ⪺㩷 㩷 㩷 㩷 㩷 ⠪ 䉺㩷 䉟㩷 䊃㩷 䊦
3.2.9 SEU A. L. Sternberg, L. W. Massengill, M. Hale, and B. Blalock
Single-Event Sensitivity and Hardening of a Pipelined Analog-to-Digital Converter
3.2.10 TID
G. Sonia, F. Brunner, A. Denker, R. Lossy, M. Mai, J. Opitz-Coutureau, G. Pensl, E. Richter, J. Schmidt, U. Zeimer, L. Wang, M. Weyers, J. Würfl, and G. Tränkle
Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices
3.2.11 TID
T. R. Oldham, R. L. Ladbury, M. Friendlich, H. S. Kim, M. D. Berg, T. L. Irwin, C. Seidleck, and K. A. LaBel
SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory
3.2.12 TID G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi
Variability in FG Memories Performance After Irradiation
3.2.13 NIEL A. Akkerman and J. Barak
New Partition Factor Calculations for Evaluating the Damage of Low Energy Ions in Silicon
ᐕᐲ䈲SET䈮㑐䈜䉎䉅䈱䈏5ઙ䇮TID㑐ଥ3ઙ䇮SEU㑐ଥ3ઙ䇮SEB䇮NIEL㑐ଥ䈏ฦ1
ઙ䈪䈅䉎䇯⚦䈭ౝኈ䈮䈧䈇䈩䈲3.2㗄䈱ฦ㗄⋡䈪⺑䈚䈩䈅䉎䇯
(1) SET䈮㑐䈜䉎䉅䈱㩷
⺰ℂ࿁〝䈲ᄢ䈐䈒ಽ䈔䈩⚵䉂ว䉒䈞(combinational)⺰ℂ࿁〝䈫㗅ᐨ䋨Sequential䋩⺰ℂ࿁〝䈮
ᄢ䈘䉏䉎䇯㗅ᐨ࿁〝䈲ାภ䈱વ䈜䉎࿁〝ਛ䈮䊂䊷䉺䉕ᜬ䈜䉎 FF 䈭䈬䈱䊜䊝䊥ⷐ⚛䉕䉃䉅
䈱䈪䇮࿁〝ో䈫䈚䈩䈱ജ䈏䈠䈉䈚䈢䊜䊝䊥ⷐ⚛䈱⺰ℂ⁁ᘒ䈮ଐሽ䈜䉎䇯⚵䉂ว䉒䈞⺰ℂ࿁〝䈲䇮
䈠䈉䈚䈢䊜䊝䊥ⷐ⚛䉕䉁䈭䈇䉅䈱䉕ᜰ䈜䇯䉟䉥䊮䈏࿁〝ਛ䈱䊉䊷䊄䋨ᢔጀ䋩䈱ⓨਲጀ䉕ㅢㆊ䈜䉎䈫䇮
䈠䈱ਛ䈪⊒↢䈚䈢㔚⩄䈏䊐䉜䊈䊥䊮䉫䈭䈬䈱䊜䉦䊆䉵䊛䉕䈚䈩䊉䊷䊄䈮㓸䈘䉏䇮䊉䉟䉵䈏⊒↢䈜䉎䇯
䈖䈱䊉䉟䉵䈏䉲䉴䊁䊛䋨䊙䉟䉮䊮䈭䈬㔚ሶⵝ⟎䋩䈫䈚䈩⺋䈦䈢ജ䈫䈭䈦䈢ᤨ䈮䉣䊤䊷䈫䈭䉍䇮䈖䉏䉕
SET䈫⒓䈜䉎䇯
࿁〝ౝ䈪⊒↢䈚䈢䊉䉟䉵䈲ᔅ䈝䈚䉅 SET 䈮䈲䈭䉌䈭䈇䇯䈠䉏䈲䇮એਅ䈱䉋䈉䈭䊜䉦䊆䉵䊛䈮䉋䉍䇮䊉
䉟䉵䈱વ䈏㒖ᱛ䈘䉏䉎䈢䉄䈪䈅䉎䇯
(a) Window masking(Timing derateing)
FF䈪䈲ㅢᏱ䉪䊨䉾䉪ାภ䈱┙䈤䈏䉍䉁䈢䈲┙ਅ䉍䈮หᦼ䈚䈩ାภD䈏䊤䉾䉼䋨ᜬ䋩䈘䉏䉎䇯䈖
䈱䉪䊨䉾䉪ାภ䈱䉰䉟䉪䊦䉕c䇮ផ⒖ᤨ㑆䉕w䈫䈜䉎䈫䇮䊉䉟䉵d䈏w䉋䉍ዊ䈘䈇႐ว䈲䇮䊉䉟䉵䈲
䊤䉾䉼䈘䉏䈭䈇䋨䊤䉾䉼䈘䉏䉎⏕₸P=0䋩䇯d䈏w䉋䉍ᄢ䈐䈒䇮c+w䉋䉍ዊ䈘䈇႐ว䈲䋨d-w䋩/c䈱⏕₸䈪
䊤䉾䉼䈘䉏䉎䇯d>(c+w)䈱႐ว䈲䇮䈬䉖䈭႐ว䈪䉅d䈱ਛ䈮latch window䈏䈦䈩䈒䉎䈱䈪⏕₸䈲
1 䈫䈭䉎䇯ૉ䈚䇮䈖䉏䈲䇮䈦䈩䈒䉎䊉䉟䉵䈏චಽ䈭䊌䊦䉴㜞䉕ᜬ䈦䈩䈇䉎䈖䈫䈏೨ឭ䈮䈭䉎䇯䉪䊨䉾䉪
ᵄᢙ䈏㜞䈇䈾䈬䇮c 䈏⍴䈒䈭䉎䈱䈪䇮䉣䊤䊷䈱⊒↢⏕₸䈲㜞䈒䈭䉎䇯䉁䈢䇮ᓸ⚦ൻ䈏ㅴ䉃䈫䇮േ
㔚䈱ૐਅ䉅หᤨ䈮ㅴ䉃䈢䉄䇮䊌䊦䉴㜞䈱䈚䈐䈇୯䈏ਅ䈏䉎䈖䈫䈮ട䈋䇮䊌䊦䉴䈲㐳䈒䈭䉎䈫䈘䉏
(b) Electric masking (derating)
FF 䈮䊤䉾䉼䈘䉏䉎ᤨὐ䈪䊉䉟䉵䈏ᷫ䈚䈩ᔅⷐ䈭䊌䊦䉴㜞䈮㆐䈚䈩䈇䈭䈇႐ว䇮䊉䉟䉵䈲વ䈘
䉏䈭䈇䇯䈖䈱ലᨐ䉕Electric Masking䈫䈹䇯
(c) Logic masking (derating)
AND 䉭䊷䊃䈱৻ᣇ䈱ജ䈏 L 䈱႐ว䇮ઁᣇ䈮䊉䉟䉵䈏䈦䈩䉅䊉䉟䉵䈲વ䈚䈭䈇䇯䈖䈱䉋䈉䈭
ലᨐ䉕Logic masking䈫⒓䈜䉎䇯
એ䈱ലᨐ䋨ଥᢙ䋩䉕↪䈇䈩䇮䉣䊤䊷䈫䈭䉍䈉䉎䊌䊦䉴㜞䉕ᜬ䈧䊉䉟䉵䈱⊒↢㗫ᐲ䈎䉌⸘▚䈘䉏䉎䉣
䊤䊷₸䋨Nominal FIT䋩䈮䈖䉏䉌䈱ലᨐ䉕䈚䈢ଥᢙ䉕ដ䈔䈩ᱜⷙ䈱䉣䊤䊷₸䈏᳞䉄䉌䉏䉎䇯䈖䉏䈲䇮
䉭䊷䊃න䈪䉅䇮䉲䉴䊁䊛ో䈪䉅ห᭽䈮ㆡ↪䈪䈐䉎䇯
SET䈱⊒↢䊶વ䈱᭽ᑼ䈮䈲࿑ 3.1.4-1䈮␜䈜䉋䈉䈮FF䈭䈬䈱䊜䊝䊥ⷐ⚛䋨㗅ᐨ࿁〝䋩䈱ਛ䈪⋥
ធ⊒↢䈜䉎䉅䈱䈫䇮FF 䈱㑆䈮䈜䉎⚵䉂ว䉒䈞⺰ℂ࿁〝䈱ਛ䈪⊒↢䈚䇮㗅ᐨ࿁〝䈮䊤䉾䉼䈘䉏
䉎䋲ㅢ䉍䈱᭽ᑼ䈏䈅䉎䇯
⚵วߖ⺰ℂ࿁〝ౝߢ⊒↢ߔࠆSET (Single Event Transient)ߪޔㄭᐕߩᓸ⚦ൻߐࠇߚ࠺ࠫ
࠲࡞CMOS࿁〝ߦ߅ߡ㕖ᏱߦᷓೞߥࠛḮߢࠅޔߎࠇࠄߩ㒐ᱛኻ╷ࠍ⠨߃ࠆߢߪޔ
߹ߕߪ⊒↢ߔࠆSETࠍല₸⊛ߦ⹏ଔߔࠆᚻᴺ߇ᔅⷐߢࠆޕ߹ߚޔASIC↪ߩࠬ࠲ࡦ࠳࠼
࡞ࠗࡉࠍ᭴▽ߔࠆߢߪޔ⸥SET⹏ଔࠍ൮⊛ߦޔ߹ߚࠃࠅല₸⊛ߦታᣉߒߡᔅ
ⷐߥ࠺࠲ࠍขᓧߒޔ࿁〝߹ߚߪࠗࠕ࠙࠻ߢߩ SET 㒐ᱛኻ╷ࠍ⻠ߓࠆᔅⷐ߇ࠆޕ
SET䊌䊦䉴䈏䊜䊝䊥⚛ሶ䈮䊤䉾䉼䈘䉏SEU䈱ේ࿃䈫䈭䉎䈮䈲䇮䈠䈱䊜䊝䊥⚛ሶ䈱Setup/Hold䉕ḩ䈢
䈜䉋䈉䈭䈅䉎⒟ᐲ䈱“䊌䊦䉴”䈏ᔅⷐ䈪SET⹏ଔ䈱䈪䈱䉪䊥䊁䉞䉦䊦䊌䊤䊜䊷䉺䈲“SET䊌䊦䉴
“䈪䈅䉎䇯SET䊌䊦䉴⹏ଔ䈱ὑ䈱ᓥ᧪䈱⹜㛎࿁〝䈲䇮䈇䈝䉏䉅หᦼ䊜䊝䊥⚛ሶ䉕↪䈇䈢Dynamic
⹜㛎↪࿁〝䋨 䉲䊐䊃䊧䉳䉴䉺䇮䉁䈢䈲 ⋥ធ⊛䈭SET䊌䊦䉴᷹ቯ䋩䈏↪䈇䉌䉏䈩䈐䇮䈠䈱⚿ᨐ䈲㕖Ᏹ
䈮ല䈪䈲䈅䈦䈢䈏䇮䈖䉏䉌䈱⹜㛎ᣇᴺ䈮䈲䇮㜞ㅦേ䈏น⢻䈭⹜㛎ᴦౕ䈏ᔅⷐ䈪䈅䉍䇮หᦼ䊜䊝
䊥⚛ሶ䈱Setup/Hold䊥䊚䉾䊃䈮ḩ䈢䈭䈇SET䈲ᬌ⍮䈪䈐䈭䈇╬䈱⚂䈏䈅䈦䈢䇯䈠䈖䈪䇮Bazeࠄ[2]
ߪޔ䉋䉍䉲䊮䊒䊦䈭⹜㛎࿁〝䈶⹜㛎ᴦౕ䈪SET⹏ଔ䈏ታ᧪䉎ᚻᲑ䈫䈚䈩䇮ᧄ⺰ᢥ䈪䈲SET
䉺䊷䉭䉾䊃࿁〝䇮SET ᑯ࿁〝䋨guard-gate䋩䈫㕖หᦼ䊤䉾䉼⚛ሶ䉕↪䈇䈢࿑ 3.1.4-2䈮␜䈜䉋䈉䈭
⹜㛎ᣇᴺ䉕ឭ᩺䈚䇮Lawrence Berkeley Laboartories䈱88䉟䊮䉼䉰䉟䉪䊨䊃䊨䊮䉕↪䈇䈩㊀䉟䉥䊮
ᾖ䈮䉋䉍⊒↢䈜䉎SET䊌䊦䉴䉕᷹ቯ䈚䈢䇯
⚿ᨐࠍ࿑ 3.1.4-3ߦ߹ߣࠆޕォᢿ㕙Ⓧ=10-9cm2/inverter䉕⸵ኈ᧪䉎ォᢿ㕙Ⓧ䈱䊥䊚䉾
䊃䈫䈚䈢႐ว䇮ᧄ䊒䊨䉶䉴(130nmBulk/CMOS)ౝ䈪⊒↢䈜䉎SET䈱䊌䊦䉴䈲䇮480ps䈎䈠䉏䉋䉍
䉅ᐢ䈇⒟ᐲ䈪䈅䉎䈖䈫䈏್䈚䈢䇯480ps 䈲䇮䉴䉺䊮䉻䊷䊄䉶䊦䊤䉟䊑䊤䊥ਛ䈱䉟䊮䊋䊷䉺 20 Ბ䈱
䉼䉢䊷䊮䈪䈱વ៝ㆃᑧᤨ㑆䈫ห╬䈪䈅䉎䇯࿑ 3.1.4-4䈲ㅢᏱ䈱䉟䊮䊋䊷䉺䊶䉼䉢䊷䊮䈮ട䈋䇮DMR,
TMR䈱᭴ᚑ䉕␜䈚䈢䉅䈱䈪䇮࿑ 3.1.4-5䈮2㊀౬㐳䋨DMR䋩䈶3㊀౬㐳䋨TMR䋩᭴ᚑ䈫䈚䈢࿁
〝䈪䈱䇮LET䈮ኻ䈜䉎SEUォᢿ㕙Ⓧ䉕␜䈚䈢䇯Single䉋䉍䉅DMR䇮TMR䈱ᣇ䈏䇮SET㒐ᱛ䈮
䉋䉍ലᨐ⊛䈪䈅䉎䇯DMR/TMR䈲䇮ዊⷙᮨ䈭䊨䉳䉾䉪࿁〝䈪䈲䇮SETᑯ࿁〝䉋䉍䉅ᅢ䉁䉏䈩↪䈘
䉏䉎䇯࿑ 3.1.4-6䈲䇮䉟䊮䊋䊷䉺䊶䉼䉢䊷䊮䈱䊧䉟䉝䉡䊃䈱䉟䊮䊋䊷䉺㑆䊏䉾䉼䉕ᄌ䈋䈢႐ว䈱䇮
LET䈮ኻ䈜䉎SEUォᢿ㕙Ⓧ䉕␜䈚䈩䈇䉎䇯䉟䊮䊋䊷䉺㑆䊏䉾䉼䉕䇮2Pm䈫 10Pm䈮ᄌൻ䈘䈞䈢
႐ว䇮ォᢿ㕙Ⓧ䈮ᄢ䈐䈭㆑䈇䈲䉌䉏䈭䈎䈦䈢䇯
䈚䈢䈏䈦䈩䈖䈱㑆㓒䈱▸࿐䈪䈲㔚⩄䉲䉢䉝䊥䊮䉫䈲⊒↢䈚䈩䈇䈭䈇䈫⠨䈋䉌䉏䉎䇯
࿑ 3.1.4-3 ࡄ࡞᷹ࠬቯ⚿ᨐ
࿑ 3.1.4-4 ౬㐳♽ߩઍ㧦
a) ㅢᏱߩࠗࡦࡃ࠲࠴ࠚࡦޔ
b) MR (Double Module Redundancy), c) TMRZ (Triple Module Redundancy )
Benedetto䉌䈲นᄌㆃᑧ࠶࠴( programmable delay temporal latch )ࠍ↪ߡ0.25ޔ0.18ޔ
0.13Ǵm CMOSߦߟߡSETߩᢿ 㕙Ⓧࠍ᷹ቯߔࠆߎߣߦࠃࠅޔ࠹ࠢࡁ ࡠࠫࡁ࠼ߦࠃࠆะࠍ⹏ଔߒߚ
[3]ޕ0.25㱘m䈫0.18㱘m CMOS䉼䉾 䊒䈲TSMC(Taiwan Semiconductor
Manufacturing Company)䈱 ⺰ ℂ
LSI ↪䉰䊥䉰䉟䊄䊒䊨䉶䉴䈪䈘䉏䇮
0.13㱘m䈲 IBM䈪䈘䉏䈢䇯ታ㛎
ᣉ ⸳ 䈲 Brookhaven National
Laboratories (BNL) 䈫 Lawrence
Berkley National Laboratories
(LBL)䉕↪䈇䈢䇯ਔᣉ⸳䈪ᓧ䉌䉏
䈢䊂䊷䉺䈲⦟䈇৻⥌䈏䉌䉏䈢䇯
ᣉ⸳䈱․ᓽ䈎䉌䇮㜞䉟䉥䊮ᵹ᧤䈱䉅
䈱䈲BNL䇮㜞LET䈱䉅䈱䈲LBL
䉕↪䈇䈢䇯SETߩࡄ࡞ࠬ߅ࠃ߮
ᢿ㕙Ⓧߩᦨᄢ୯ߪ࿑ 3.1.4-7ߦ␜ ߔࠃ߁ߦਥߦ㔚Ḯ㔚ߦଐሽߒޔ ਔ⠪ߪേ㔚ࠍਅߍࠆߣ⪺ߒ ߊჇടߔࠆߎߣ߇ࠊ߆ߞߚޕ߹ߚޔ
ᓸ⚦ൻߦଐߞߡޔേ㔚߇ૐᷫߔࠆߎߣߦࠃࠅޔ࿑ 3.1.4-8ߦ␜ߔࠃ߁ߦࡄ࡞ࠬ߇㐳ߊߥ
ࠆะ߇ࠄࠇߚޕ
࿑ 3.1.4-7 0.13umຠࡄ࡞ࠬߩേ㔚ଐሽᕈ
࿑ 3.1.4-5 ౬㐳࿁〝᭴ᚑߩലᕈ
SET䊌䊦䉴䈱વ䈲䊌䊦䉴䈏䇱䈱
䉭䊷䊃䈱ㆫ⒖ᤨ㑆䉕䈋䉎䈫ᷫ䈜䉎䈖䈫䈭䈒
વ䈜䉎䈫䈘䉏䈩䈇䉎䈏䇮࿑ 3.1.4-9䈮␜䈜
䉋䈉䈭䉭䊷䊃䊶䊄䊧䉟䊮㑆䈱䉦䉾䊒䊥䊮䉫ኈ㊂䈭
䈬䊈䉧䊁䉞䊑䊶䊐䉞䊷䊄䊋䉾䉪䉕⠨ᘦ䈜䉎䈫䊌
䊦䉴䈏⪺䈚䈒ᷫዋ䈜䉎䈖䈫䉕
Narasimham[4]䈲SPICE䈮䉋䉎⸃ᨆ䈪␜
䈚䈩䈇䉎䇯࿑ 3.1.4-10䈲䇮䊈䉧䊁䉞䊑䊶䊐䉞䊷
䊄䊋䉾䉪䈱ലᨐ䉕䇮䉭䊷䊃䊶䊄䊧䉟䊮㑆䈱
䊐䉞䊷䊄䊋䉾䉪ኈ㊂(Cgd)䉕ᄌ䈋䈢䈫䈐䈱䊌
䊦䉴䈮䈧䈇䈩␜䈚䈢䉅䈱䈪䈅䉎䇯80Ბ䈱
䉟䊮䊋䊷䉺䊶䉼䉢䊷䊮䈱ೋᲑ䈱ജ䈮90ps
䈱SET䊌䊦䉴䉕ශട䈚䈢ᤨ䈱ฦ䉟䊮䊋䊷䉺
ജ䈱SET䊌䊦䉴䉕␜䈜䇯䈖䈱ലᨐ䉕ಽ
㔌䈪䈐䉎䉋䈉䈮↪䈜䉎SPICE䊝䊂䊦䈱䊧
䊔䊦1䈮ୃᱜ䉕ᣉ䈚䇮䉟䊮䊋䊷䉺㑆䈱䉦䉾䊒
䊥䊮䉫䉕䇮䈠䉏䈡䉏䈱䉟䊮䊋䊷䉺䈱䊐䉞䊷䊄
䊋䉾䉪ኈ㊂(Cgd)䈫⽶⩄ኈ㊂(Cl)䈱
(Cgd+Cl)䉕৻ቯ䈮䈤䈭䈏䉌䇮䊐䉞䊷䊄䊋䉾
䉪ኈ㊂(Cgd)䈫⽶⩄ኈ㊂(Cl)䈱Ყ䉕ᄌ䈋䈩
䈇䉎䇯䊌䊦䉴䈲䇮㔚ᝄ䈱ඨಽ(VDD/2)
࿑ 3.1.4-8 ࡄ࡞ࠬߩઍ㑆Ყセ㧔ᮡḰ㔚േ㧕
࿑ 3.1.4-9 ⋥䈮ធ⛯䈘䉏䈢䉟䊮䊋䊷䉺㑆䈱䉦䉾
䊒䊥䊮䉫䇯CL䈲⽶⩄ኈ㊂䇯Cgd䈲䉦䉾䊒䊥䊮䉫ኈ㊂
࿑ 3.1.4-10 ✚⽶⩄ኈ㊂㧔Cgd㧗CL=৻ቯ㧕ߢޔ
⇣ߥࠆ Cgd ߣ CL ߩᲧߦኻߔࠆฦࠗࡦࡃ
࠲ࠬ࠹ࠫߢߩࡄ࡞ࠬ㧦✚⽶⩄ኈ㊂㧔Cgd
㧗CL㧕ߦ߅ߌࠆ Cgd㧔ࡈࠖ࠼ࡃ࠶ࠢኈ㊂㧕ߩ
Ყࠍᄢ߈ߊߒߡߊߣSETߩવᲑᢙߪᕆỗߦ
䈪ቯ⟵䈜䉎䇯䉲䊚䊠䊧䊷䉲䊢䊮⚿ᨐ䈲䇮䉟䊮䊋䊷䉺䊶䉼䉢䊷䊮䉕ㅴ䉃䈮ㅪ䉏䊌䊦䉴䈏ᷫዋ䈜䉎䈖䈫䉕
␜䈚䈩䈇䉎䇯䊐䉞䊷䊄䊋䉾䉪ኈ㊂䈏䇮䊃䊷䉺䊦䈱ജኈ㊂䈮ኻ䈚䈩⋧ኻ⊛䈮ᄢ䈐䈇䋨㓞ធ䈱䉟䊮䊋䊷䉺
㑆䈱䊈䉧䊁䉞䊑䊶䊐䉞䊷䊄䊋䉾䉪䈏ᄢ䈐
䈇䋩䈫䇮SET䊌䊦䉴䈲䉋䉍ᕆỗ䈮ᷫዋ
䈚䈩䈇䈒䇯㩷
Munteanu䉌䈲ᭂ⭯SOI MOSFET
䈮ኻ䈜䉎 SET 䉕䇮㊀䉟䉥䊮ᾖታ㛎䇮
䈍䉋䈶䇮㊂ሶലᨐ䉕⠨ᘦ䈚䈢 3 ᰴర䊂
䊋 䉟 䉴 䉲 䊚 䊠 䊧 䊷 䉲 䊢 䊮
䋨DESSIS+BALMOS3D䋩 䈪 ⎇ ⓥ 䈚 䈢
[5]䇯ᭂ⭯䊂䊋䉟䉴䋨⤑ෘ䈏 10nm એਅ䋩䈮䈍䈇䈩䈲䇮㊂ሶജቇ⊛ലᨐ䈏㊀ⷐ䈪䈅䉎䇯䊅䊉䉴䉬䊷䊦
䈻ะ䈎䈉MOSFET䈱䈭䈎䈪ᦨജ䈫⠨䈋䉌䉏䈩䈇䉎DG䊂䊋䉟䉴䈲䇮2䈧䈱䉭䊷䊃㔚ᭂ䈮䉋䉎㕒㔚
⊛ᓮ䈱䈢䉄䈍䉋䈶⍴䉼䊞䊈䊦ലᨐ䈱㒰䈱䈢䉄䈮㕖Ᏹ䈮⭯䈇Si⤑䉕ᔅⷐ䈫䈚䈩䈇䉎䇯DG䊂䊋䉟
䉴䈪䈲⒖േᐲ䈏Ⴧട䈚䇮ਇ⚐‛䉉䉌䈑䈏㒰䈘䉏䇮㜞⏕₸䈭䊋䊥䉴䊁䉞䉾䉪ャㅍ䉕ឭଏ䈜䉎৻ᣇ䇮ᭂ
⭯䉼䊞䊈䊦䈲ᒝജ䈭㊂ሶജቇ⊛㐽䈛ㄟ䉄ല
ᨐ䉕䈖䈜䇯50nmFD(ቢోⓨਲဳ)䉲䊮䉫䊦
䉭 䊷 䊃 SOI 䈮 GANIL䋨 䉦 䊮 䌀 䊐 䊤 䊮䉴 䋺
780MeV Kr78 䉟 䉥 䊮 䋻
LET30MeVcm2/mg䇮䋩䈱ᣂታ㛎ⵝ⟎䉕䈦
䈩㊀䉟䉥䊮䉕ᾖ䈚䈢䇯ᰴઍᭂ⭯䉲䊮䉫䊦
䉭䊷䊃䇮䉻䊑䊦䉭䊷䊃䊂䊋䉟䉴䈪䈲㊂ሶ㐽䈛
ㄟ䉄ലᨐ䈏㊀ⷐ䈪䈅䉍䇮㊀䉟䉥䊮ᾖᤨ䈱േ
䈮ኻ䈚䈩䉅ᓇ㗀䈏ᄢ䈐䈇䇯
࿑ 3.1.4-11䈮ᭂ⭯SOI䊝䊂䊦䋨FG, DG䋩
䉕 ␜ 䈜 䇯 ቢ ో ⓨ ਲ ဳ SG SOI 䈪 䈲 ࿑
3.1.4-12䈮␜䈜䉋䈉䈮䉼䊞䊈䊦㕙䋨Ꮐ䋩䈪
㊂ሶലᨐ䈏⪺䈚䈒䉏䇮㊂ሶലᨐ䉕ข䉍䉏
䈢႐ว䇮㔚ሶಽᏓ䈱䊏䊷䉪䈏㕙䈎䉌 2nm
⒟ᐲౝㇱ䈮䉍ㄟ䉂䇮䉌䈎䈮ో㔚⩄㊂䉅
ᷫዋ䈚䈩䈇䉎䈖䈫䈏ಽ䈎䉎䇯৻ᣇ I-V ଐሽᕈ
䈪䈲䉒䈝䈎䈮ฝ䈮䉲䊐䊃䈚䇮䈚䈐䈇㔚䈏
Ⴧട䈚䈩䈇䉎䈖䈫䈏ಽ䈎䉎䇯࿑ 3.1.4-13䈲䉟
䉥䊮ᤨ䈱㔚ᵹᵄᒻ䈱 LET ଐሽᕈ䉕␜䈚䈢䉅䈱䈪䇮LET-4 䈱ᤨ䈱䊁䊷䊦䈏ᦨ䉅㐳䈇䇯࿑
3.1.4-14䈲䇮䊋䉟䊘䊷䊤䉭䉟䊮䉕␜䈚䈢䉅䈱䈪䇮䉲䊚䊠䊧䊷䉲䊢䊮⚿ᨐ䈫ታ㛎୯䉕૬䈞䈩␜䈚䈢䇯㊂ሶ
࿑ 3.1.4-11 ቢోⓨਲဳ SG/DG SOI䊝䊂䊦
ലᨐ䉕ข䉍䉏䈢ᣇ䈏䇮⧯ᐓ䉭䉟䊮䈏ዊ䈘䈒䇮ታ㛎䈫䈱৻⥌䉅⦟䈇䇯
৻ᣇ䇮DG SOI䈪䈲䇮ෘ䈘5nm䈫10nm
䈮䈧䈇䈩㔚ሶኒᐲಽᏓ䉕᳞䉄䉎䈫࿑
3.1.4-15䈱䉋䈉䈮䈭䉍䇮ෘ䈘10nm䈪䈲ਔ
䈎䉌1.5nm䈱⟎䈮䋲䈧䈱䊏䊷䉪䈏䉏䇮
ෘ䈘5nm䈪䈲ਛᄩ䈮৻䈧䈱䊏䊷䉪䈏ᒻᚑ
䈘䉏䉎䈭䈬䇮㊂ሶലᨐ䈏㗼⪺䈮䉏䈢䇯
Hutson 䉌䈲䇮ᓸ⚦ൻ䈮䉋䉍䇮ᓸ⚦ൻߦ
ޔേᵄᢙ߇ᢙGHz߹ߢჇടߒߡߊ
ࠆߣޔᢙࠢࡠ࠶ࠢࠨࠗࠢ࡞೨ߩޔࠗࠝࡦ
߿ޔᓥ᧪ߪޔή㑐ଥߩࡁ࠼߆ࠄߩᓇ㗀ߢSET߇↢ߓޔᤨ㑆࠼ࡔࠗࡦߢߩ࠳ࡦ࠳ࡦࠪ
ߥߤߩᚻᴺ߇߃ߥߊߥࠆน⢻ᕈ߇ࠆߎߣࠍᜰ៰ߒޔ࿑ 3.1.4-16䈮␜䈜䉋䈉䈭ㅢᏱoff⁁ᘒ
࿑ 3.1.4-15 ቢోⓨਲဳ DG SOI䈱⸃ᨆ⚿ᨐ
࿑ 3.1.4-14 ቢ ో ⓨ ਲ ဳ SG SOI 䊝 䊂 䊦 䈮 䉋 䉎
Bipolar gain䈱⸃ᨆ⚿ᨐ
࿑ 3.1.4-16 D-FFߣ 䊃䊤䊮䉴䊚䉾䉲䊢䊮䉭䊷䊃
࿑ 3.1.4-13 ቢోⓨਲဳSG SOIߩࠗࠝࡦᤨߩ
䈱 D-F/F 䈱 Transmission gate
䈪䈱 SET 䊌䊦䉴䈱વ䈱㗴䉕
65nm 䊂䊋䉟䉴䈮䈧䈇䈩⸃ᨆ䈚䈩
䈇䉎[6]䇯䉲䊚䊠䊧䊷䉲䊢䊮⚿ᨐ䉕࿑
3.1.4-17䈮 ␜ 䈜 䇯Master 䈮
SET䊌䊦䉴䈏⊒↢䇮㔚䈏Vdd䉕
䈋䈩 Transmission 䉭䊷䊃䈏ዉ
ㅢ⁁ᘒ䈮䈭䉍䇮Slave䈮SET䊌
䊦䉴䈏વ䈜䉎䇯
(2) SEB䈮㑐䈜䉎⊒
Liu 䉌䈲Power DMOSFET䈮䈧䈇䈩
SEB 䉕䉝䊋䊤䊮䉲䉢․ᕈ䈫㑐ㅪઃ䈔䈢⼏
⺰䉕ዷ㐿䈚䈩䈇䉎[7]䇯
࿑ 3.1.4-18䈲 ౖ ဳ ⊛ 䈭 ❑ ဳ Power
DMOSFET 䈱᭴ㅧ䉕␜䈚䈢䉅䈱䈪䇮࿑
3.1.4-19䈲නጀ䉣䊏䊂䊋䉟䉴䈮䈧䈇䈩䈱
ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮⚿
ᨐ䉕␜䈚䈢䉅䈱䈪䇮䊎䊷䊛䈭䈚䈱႐ว
䈱․ᕈ䉕␜䈜䇯⚛ሶ⎕უ䈲䊄䊧䉟䊮㔚
505V એ䇮㔚ᵹ 2.19mA 䉕䈋䈩 2
ᰴ䊑䊧䉟䉪䉻䉡䊮㗔ၞ䈮䉎䈫⊒↢䈜䉎䇯
䈧䉁䉍䇮ㅢᏱ䈱႐ว䈲䇮㔚䈏 880V䉕
䈋䈩䇮䊋䉟䊘䊷䊤䈏䉺䊷䊮䉥䊮䈚䈭䈇䈫䇮
2ᰴ⎕უ㗔ၞ䈮䈲㆐䈚䈭䈇䈏䇮䉟䉥䊮
䈮䉋䉍䇮㔚ᵹ䈏2.19mA䉕䈋䉏䈳䇮
⋥ធ 2 ᰴ䊑䊧䉟䉪䉻䉡䊮㗔ၞ䈮䈲䈇䉍䇮
SEB䈫䈭䉎䇯
SEBኻ╷䈫䈚䈩䇮䉣䊏ጀ䉕2ጀ䈮䈜䉎
ᣇᑼ(device#2)䉕⠨᩺䈚䇮⚿ᨐ䈫䈚䈩䊋
䉟䊘䊷䊤䉺䊷䊮䉥䊮㔚䉕1180V䇮2 ᰴ
䊑䊧䉟䉪䉻䉡䊮㔚䉕 578V 䉁䈪㜞䈒䈜䉎䈖䈫䈏᧪䈢䇯䈘䉌䈮䉸䊷䉴Ớᐲ䉕ૐᷫ䈚䈢䊂䊋䉟䉴
䋨device#3䋩䈪䈲2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚䉕728V䉁䈪㜞䈒䈜䉎䈖䈫䈏᧪䈢䇯
࿑ 3.1.4-19 නጀࠛࡇ࠺ࡃࠗࠬߩᡆૃቯᏱࠕࡃࡦ
ࠪࠚࠪࡒࡘ࡚ࠪࡦ
࿑ 3.1.4-18 ❑ဳPower DMOSFET
䈱᭴ㅧ
㊀䉟䉥䊮ᾖታ㛎䋨Kr,Xe䋩䈪䈲䇮2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚䈮⋧ᒰ䈜䉎㔚䈪SEB䈏⊒↢䈚䈩䈍䉍䇮
ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮䈏SEB⠴ᕈ䉕੍᷹䈜䉎ല䈭ᚻᲑ䈪䈅䉎䈖䈫䉕␜䈚䈩䈇䉎䇯
(3) SEU䈮㑐䈜䉎⊒
Dyer 䉌䈲䇮ฦ⒳䈱ਛᕈሶᾖᣉ⸳(Triumf, LANSCE, TSL, IUCF, NPL, NIST)䉕↪䈇䈩
SRAM䈱SEU, SEL䈮䈧䈇䈩ᮮᢿ⊛䈭Ყセ䉕ታᣉ䈚䈢[8]䇯↪䈇䈢SRAM䈲99ᐕ䈎䉌2005ᐕ
䈮䈎䈔䈩䈱ຠ䈪䇮േ㔚䈲3.3V䈫5V䈫Ყセ⊛ฎ䈇䊂䊋䉟䉴䈪䈅䉎䇯
࿑ 3.1.4-20䈲SELᢿ㕙Ⓧ䉕䊂䊋䉟䉴A䈫Hitachi B䊂䊋䉟䉴䈮䈧䈇䈩Ყセ䈚䈢䉅䈱䈪䇮ᾖᣉ ⸳䈲LANSCE(WNR)䈫TRIUMF䈪䈅䉎䇯TRIUMF䈲ᦨᄢ䉣䊈䊦䉩䊷䈏400MeV䈫LANSCE
䈫Ყ䈼䈩ૐ䈇䈢䉄䇮SELᢿ㕙Ⓧ䈲⧯ᐓૐ䈒䈭䉎䇯࿑ 3.1.4-21䈲Samsung䈱4Mbit SRAM䈮䈧䈇
䈩䈱ฦ⒳ᾖ⸳䈮䉋䉎ᢿ㕙Ⓧ⹏ଔ⚿ᨐ䉕␜䈚䈢䉅䈱䈪䇮ฦ⒳䈱⸳䈪㘻ᢿ㕙Ⓧ䈱୯䈲䈰৻
⥌䈚䈩䈇䉎ὐ䇮㓁ሶ䈮䈧䈇䈩䈲㜞䈇䈚䈐䈇୯䈏⏕䈘䉏䈩䈇䉎䇯࿑ 3.1.4-22䈲ฦ䊂䊋䉟䉴䈱㜞䉣䊈
䊦䉩䊷SEUᢿ㕙Ⓧ䇮࿑ 3.1.4-23䈲ᾲਛᕈሶ䈮䉋䉎SEUᢿ㕙Ⓧ䈱᷹ቯ⚿ᨐ䉕䉁䈫䉄䈢䉅䈱䈪䈅䉎䇯
࿑ 3.1.4-20 SELߩᢿ㕙Ⓧߩ2ᾖᣉ⸳Ყセ ࿑ 3.1.4-21 Samsung 4Mbit SRAMߩSEU ᢿ㕙Ⓧߩᾖᣉ⸳㑆Ყセ
Gasiot䉌䈲䇮241Am䈎䉌䈱5MeV㱍✢䈮䉋䉎MCU䈱᷹ቯ⚿ᨐ䉕䉁䈫䉄䈩䈍䉍䇮ὼ䈱MCU䈱
䉦䉡䊮䊃䉕㒐䈓⛔⸘⊛ᚻᴺ䉕ឭ᩺䈚䈩䈇䉎[9]䇯
3.1.4-2䈮⹜㛎䈚䈢SRAM䈱․ᕈ䉕䉁䈫䉄䈢䇯
࿑ 3.1.4-24䈲 SEU ᢿ㕙Ⓧ᷹ቯ୯䈱⋧ኻ୯䉕␜䈚
䈢䉅䈱䈪䇮130nm ຠ䈮Ყ䈼䇮90nm ຠ䈱ᣇ䈏⠴ᕈ
䈏ะ䈚䈩䈇䉎䈏䇮65nm䈪䈲ౣ䈶ᖡൻ䈚䈩䈇䉎䈖䈫
䉕 ข 䈕 䇮 䈖 䉏 䉕 䉲 䊷 䊃 ᛶ ᛫ 䈏 ේ ࿃ 䋨130nm䋺
90nm:65nm䈏nWell䈪䈲100:73:120䇮pWell䈪
䈲 100:71:135䋩䈫䈚䈩䈇䉎䇯䉁䈢䇮SRAM
䈱⠴ᕈะ╷䈫䈚䈩䇮䊉䊷䊄䈮㕒㔚ኈ㊂
䉕ઃട䈜䉎 rSRAM䈱ലᨐ䉅⹏ଔ䈚䈩䈇
䉎䇯
Sternberg䉌䈲䇮䊌䉟䊒䊤䉟䊮ဳAD䉮
䊮䊋䊷䉺䋨IBM␠130nmCMOS 䊒䊨䉶
䉴䈪ㅧ䈘䉏䈢10bit䊌䉟䊒䊤䉟䊮ᒻA-D
䉮䊮䊋䊷䉺䇮㔚Ḯ㔚 1.2V,ᦨᄢ䉪䊨䉾䉪
15MHz䋩䈱SE⠴ᕈ䉕⹏ଔ䈚䈩䈇䉎[10]䇯
AD 䉮䊮䊋䊷䉺䈲 9 䈱䉴䊁䊷䉳䈫䉣䊤䊷⸓ᱜ࿁〝䈪᭴ᚑ䈘䉏䈍䉍䇮࿑ 3.1.4-25䈮␜䈜䉋䈉䈮ฦ䉴
䊁䊷䉳䈮䈍䈇䈩䊎䉾䊃䈎䉌㗅䈮1䊎䉾䊃ಽ䈱䉝䊅䊨䉫䊂䊷䉺䈏䊂䉞䉳䉺䊦୯䈮ᄌ឵䈘䉏䉎䇯ᦨೋ䈱
3.1.4-2 ⹜㛎ߦ↪ߚSRAM
࿑ 3.1.4-23 3ᾖᣉ⸳ߦࠃࠆᾲਛᕈሶSEUᢿ㕙ⓍߩᲧセ
䊂䉞䉳䉺䊦ജ䈲䉴䊁䊷䉳ᢙ⋧ᒰ䈱䉪䊨䉾䉪ಽ䈣䈔ㆃᑧ䈜䉎䈏䇮䉴䊦䊷䊒䉾䊃䈲䊐䊤䉾䉲䊠ᒻ䈫ห䈛䈒1
䉪 䊨 䉾 䉪 䈪 䈅 䉎 䇯 ฦ 䉴 䊁 䊷 䉳 䈲࿑
3.1.4-26䈮䊑䊨䉾䉪࿑䉕␜䈜䉋䈉䈮䇮
S&H䋨䉰䊮䊒䊦䋧䊖䊷䊦䊄䋩࿁〝䇮
1䊎䉾䊃ADC, 1䊎䉾䊃DAC, ᱷᏅ䉝
䊮䊒䈪᭴ᚑ䈘䉏䈩䈍䉍䇮䉝䊅䊨䉫
ജ䈫 1 䊎䉾䊃⋧ᒰ㔚䉕䉮䊮䊌䊧䊷
䉺䈪Ყセ䈚䇮䈠䈱ᱷᏅ䉕ᰴ䈱䉴䊁䊷
䉳䈻ജ䈚䈩䈇䉎䇯
䈖䈱䊂䊋䉟䉴䈱SE䈮ኻ䈜䉎ᗵฃ
ᕈ 䉕 ⏕ 䈜 䉎 䈢 䉄 䈮 䇮 䉴 䊕 䉪 䊃 䊤 䉲 䊚 䊠
䊧䊷䉺䋨the Spectra simulator䋩䉕↪
䈚䈢࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䋨䊝䊮䊁䉦䊦䊨
ᴺ䋩䉕ታᣉ䈚䈢䇯䈠䈱䊌䊤䊜䊷䉺䈲 A-D 䉮
䊮䊋䊷䉺䈻䈱ജାภ㔚䇮㊀䉟䉥䊮䈱
ᤨᦼ䇮㊀䉟䉥䊮䈏䈜䉎䊃䊤䊮䉳䉴
䉺䈠䈚䈩㊀䉟䉥䊮䈱LET䈪䈅䉎䇯
ᢿ㕙Ⓧ䈱䉲䊚䊠䊧䊷䉲䊢䊮⚿ᨐ䉕 LET 䈱㑐ᢙ䈫䈚䈩␜䈜䇯࿑ਛ䈱䊌䊤䊜䊷䉺䋨䉝䉾䊒䉶䉾䊃䈚䈐䈇
ജ㔚䋩䈲䇮ADC䈱ജಽ⸃⢻䈫䈚䈩ⷐ᳞䈜䉎㔚䋨V䋩୯䈪䈅䈦䈩䇮ಽ⸃⢻䈱ⷐ᳞୯䈏㜞䈇䈾䈬䉣
䊤䊷䈫⋴䈘䉏䉎ᢿ㕙Ⓧ䈲㜞䈒䈭䉎䇯䈖䉏䈏䇮䊜䊝䊥䈭䈬䈱SEUᢿ㕙Ⓧ䈫ᄢ䈐䈒⇣䈭䉎ὐ䈪䈅䉍䇮䉝䊒䊥
䉬䊷䉲䊢䊮䈮ᒝ䈒ଐሽ䈜䉎䈖䈫䈮䈭䉎䇯
࿑ 3.1.4-25 䊌䉟䊒䊤䉟䊮ဳAD䉮䊮䊋䊷䉺䈱ᔨ
࿑ 3.1.4-26 ฦ䉴䊁䊷䉳䈱䊑䊨䉾䉪࿑
࿑ 3.1.4-27 䈚䈐䈇㔚50mV䈱႐ว䈱S&H࿁ 〝䈍䉋䈶䉮䊮䊌䊧䊷䉺䈱⠴ᕈᲧセ
࿑ 3.1.4-27䈲䈚䈐䈇ജ㔚50mV䇮࿑ 3.1.4-28䈲5mV䈱႐ว䈱䉮䊮䊌䊧䊷䉺䈫S&H࿁〝䈱 ⠴ᕈᲧセ䉕䈚䈢䉅䈱䈪䇮䈚䈐䈇㔚䈏ᄢ䈐䈇䈫䈐䈲䉮䊮䊌䊧䊷䉺䈱⠴ᕈ䈏ᖡ䈒䇮䈚䈐䈇㔚䈏ૐ䈇䈫䈐
䈲䇮LET䈏㜞䈇䈾䈬S&H࿁〝䈏ᒙ䈒䈭䉎䈖䈫䈏ಽ䈎䉎䇯
(4) TID䈮㑐䈜䉎⊒
Sonia䉌䈲ൻว‛ඨዉAlGaN/GaN HFET䈮䈧䈇䈩䇮68MeV,2MeV䈱䊒䊨䊃䊮䈫⚛䋯㉄⚛
䋯㋕䈭䈬䈱㊀☸ሶᾖ䈪䈱AlGaN/GaN HFET䈱േ䉕⺞ᩏ䈚䈢[11]䇯
GaN 䊔䊷䉴䈱䊓䊁䊨䉳䊞䊮䉪䉲䊢䊮㔚⇇ലᨐ䊃䊤䊮䉳䉴䋨HFET䋩䉺䈲䇮㜞ജ䈱䊙䉟䉪䊨ᵄ↪ຠ
䈻䈱ㆡ↪䈮㑐䈚䈩ᵈ⋡ᐲ䈏㜞䈇䇯GaN䊂䊋䉟䉴䈱㔚᳇․ᕈ䈎䉌㜞ജ䇮㜞ᵄ䈪േ䈏น⢻䈭䈢
䉄䊑䊨䊷䊄䊋䊮䊄ㅢା䉲䉴䊁䊛䈮ㆡ䈚䈩䈇䉎䇯䉁䈢䇮GaN 䊔䊷䉴䈱䊂䊋䉟䉴䈲㜞䈇✢⠴㊂䉕ᜬ
䈧䈖䈫䈏䉌䉏䈩䈇䉎䇯࿑ 3.1.4-19䈮␜䈜䉣䊏䉺䉨䉲䊞䊦ጀ䉕ᜬ䈧䇮䉸䊷䉴䉮䊮䉺䉪䊃:Ti/Al/Ti/Au䇮
䉭䊷䊃䉲䊢䉾䊃䉨䊷㔚ᭂ:Pt/Ti/Au䇮㕙⼔⤑ PECVD-SiN,䉭䊷䊃㐳䇮䈲ฦ䇱0.35um, 250um
䈱GaN HFET䉕↪䈇䈢䇯ෘ䈇GaNጀ䈱䉰
䊮䊒䊦䈪䇮䊐䉤䊃䊦䊚䊈䉾䉶䊮䉴䇮X ✢࿁᛬䈫
䊖䊷䊦᷹ቯ䈮䉋䉍ᾖ೨ᓟ䈱․ᕈ⹏ଔ䉕䈍
䈖䈭䈦䈢䇯
䊶㜞䉣䊈䊦䉩䊷䈪䈲䊂䊋䉟䉴ᕈ⢻䈮ᓇ㗀䈭
䈇䈏ૐ䉣䊈䊦䉩䊷䈱㜞䊐䊦䉣䊮䉴䈪ഠൻ䈏
⏕䈘䉏䈢䇯
68MeV䈱䊒䊨䊃䊮䇮C.O䈪䈲䇮䉭䊷䊃䊥䊷䉪
㔚ᵹ䇮䈚䈐䈇୯㔚䇮⠴䇮䉮䊮䉺䉪䊃ᛶ᛫䇮
䊌䊦䉴䌉䋭䌖․ᕈ䇮300K䋬77K 䈪᷹
ቯ䈚䈢䉨䊞䊥䉝Ớᐲ䇮⒖േᐲ䈇䈝䉏
䉅ᄢ䈐䈭ᄌൻ䈲ή䈎䈦䈢䇯䈖䉏䈲䇮䉟
䉥䊮䈱㘧⒟䈏䊂䊋䉟䉴䈱ෘ䉂䉋䉍㐳
䈇䈢䉄䇮ᰳ㒱䈏ᒻᚑ䈘䉏䈭䈎䈦䈢䈢
䉄䈫⠨䈋䉌䉏䉎䇯
৻ᣇ䇮2MeV 䉟䉥䊮ᾖ䈱႐ว䇮
IDS-VDS ․ ᕈ 䈮 䈧 䈇 䈩 ࿑
3.1.4-30䈮␜䈜䉋䈉䈮䇮䊒䊨䊃䊮䈱ᓇ
㗀䈲ዊ䈘䈇䈏䇮C,O,Fe 䈮䈧䈇䈩䈲
㘻୯䈏ᄢ䈐䈒ᷫዋ䈜䉎䈖䈫䈏ಽ䈎
䉎䇯
࿑ 3.1.4-29 MOVPE ᴺ䈮ଐ䈦䈩ᒻᚑ䈘䉏䈢
GsN HFET䈱䉣䊏䉺䉨䉲䊞䊦ጀ
䉁䈢䇮࿑ 3.1.4-31,࿑ 3.1.4-32䈮␜䈜䉋䈉䈮䇮⒖േᐲ,䉮䊮䉺䉪䊃ᛶ᛫䈮䈧䈇䈩䉅 C,O,Fe 䈪䈲
1011/cm2એ䈱䊐䊦䉣䊮䉴䈪ᄢ䈐䈭ᄌൻ䈏䉌䉏䉎䇯
Oldham 䉌䈲䇮Micron Semiconductor
90nm 2Gb NANDဳ䊐䊤䉾䉲䊠䊜䊝䊥䈮
ኻ䈚TID䈶SEE⹏ଔ䉕ታᣉ䈚䇮ᣥ䊁䉪䊉
䊨䉳䊷ຠ䈮Ყ䈼䇮䉭䊷䊃㉄ൻ⤑䈱⭯⤑ൻ䈮
䉋䉎䊃䊷䉺䊦䊄䊷䉵ᔕ╵䈱৻⥸⊛䈭ᡷༀ䈫
䉲䊠䊥䊮䉪䈮䉋䉎 SEEᢿ㕙Ⓧ䈱ૐᷫ䈏⏕
䈪䈐䈢ઁ䇮䊃䊷䉺䊦䊄䊷䉵⹏ଔ䈮䈍䈇䈩䈲䇮
ᣂ䈭䉻䉟䊅䊚䉾䉪䉣䊤䊷䊝䊷䊄䉕ᬌ䈚䈢䈖䈫
䉕ႎ๔䈚䈩䈇䉎[12]䇯DUT 䈲㔚Ḯ㔚䈲
3.3V䈪ౝㇱ࿁〝䉕䈚䇮2048䊑䊨䉾䉪,
64䊕䊷䉳/䊑䊨䉾䉪, 2K×8䊎䉾䊃/䊕䊷䉳䈪䈅䉎ޕ
䊃䊷䉺䊦䊄䊷䉵⹜㛎䈪䈲60Co✢Ḯ䉕↪
䈇䇮ᦨᄢ30-rad/s䉁䈪✢㊂₸䉕䈕䈢䇯
േ䊝䊷䊄䈲Read only, Exercised
manually 䋨䉼䉾䊒৻䈪read / Erase / Write 䋩, Exercised manually and
dynamically 䋨䊑䊨䉾䉪න䈪read /
Erase / Write 䋩䈱3ㅢ䉍䇯
SEE ⹜㛎䈪䈲䇮㊀☸ሶ䋨NSCL, TAM
䈪 Ne,Ar,Kr,Xe䋩䈫䊒䊨䊃䊮ᾖ(IUCF)䉕
࿑ 3.1.4-33 TID⹜㛎䈱⚿ᨐ䋨Dynamic䉣䊤䊷䈲 ૐ䊄䊷䉵㊂䈪⊒↢䈜䉎䇯䋩
࿑ 3.1.4-31 2MeV䉟䉥䊮ᾖ䈱႐ว䈱⒖േᐲ䈱ᄌൻ
࿑ 3.1.4-32 2MeV䉟䉥䊮ᾖ䈱႐ว䈱䉮䊮䉺䉪䊃ᛶ᛫ 䈱ᄌൻ
ታᣉ䈚䈢䇯
TID ⹜㛎䈪䈲䇮ቶ᷷䉝䊆䊷䊦ᓟୃᓳ䈜䉎䉅䈱䋨Static䋩䈫ୃᓳ䈞䈝ᄙ䊎䉾䊃䊝䊷䊄䋨dynamic 䋻࿑
3.1.4-34䈮䊎䉾䊃䊙䉾䊒䈱䉕␜䈜䋩䈱 2 ㅢ䉍䈱䉣䊤䊷䊝䊷䊄䈏⊒↢䈚䈢䇯࿑ 3.1.4-33䈮ਔ䊝䊷䊄䈱 䊄䊷䉵㊂ଐሽᕈ䉕␜䈜䇯
SEE⹜㛎䈪䈲䇮Static䋨ᾖਛRead䈚䈭䈇䋩㔚ශട䈚䈭䈇䊝䊷䊄䇮Static䈪ශട䈜䉎䊝䊷䊄䇮
Dynamic䋨ᾖਛRead䉕➅䉍䈜䋩Read, Dynamic Read/Write, Dynamic Read/Erase/Write
䈱 5 䊝䊷䊄䈪ታᣉ䈚䈢䇯㊀☸ሶ䈱႐ว䇮All“0”䈏䊪䊷䉴䊃䊂䊷䉺䊌䉺䊷䊮䈪䇮Page/Block䉣䊤䊷䋨䉮
䊮䊐䉞䉫䊧䊷䉲䊢䊮䊧䉳䉴䉺䈱䉣䊤䊷࿃䈫ᕁ䉒䉏䉎䊕䊷䉳䉁䈢䈲䊑䊨䉾䉪ో䈮䈹䉣䊤䊷䋩䇮SEFI
䋨䉮䊙䊮䊄䈮ᔕ╵䈚䈭䈇䇯৻ㇱ䈲SEGR䈫ផቯ䋩䈏⊒↢䈚䈢䇯
࿑ 3.1.4-35䌾࿑ 3.1.4-38䈮䈠䉏䈡䉏䈱䊝䊷䊄䈮ኻ䈜䉎 Page/Block 䉣䊤䊷䉕㒰䈇䈢ᢿ㕙Ⓧ
䊂䊷䉺䉕䉁䈫䉄䉎䇯ᢿ㕙Ⓧ䈱୯䈲ᓥ᧪ႎ๔䈘䉏䈩䈇䉎䊧䊔䊦䉋䉍䋲ᩴૐ䈒䈭䈦䈩䈍䉍䇮90nm䈪䈲ᡷༀ
䈏䉌䉏䉎䇯
Floating Gate (FG)ᒻਇើ⊒ᕈ䊜䊝䊥䈮㊀䉟䉥䊮䈏ᾖ䈘䉏䉎䈫䋬FGਛ䈱㔚⩄䈏㔚䈚䇮䉁䈢䊃
䊮䊈䊦㉄ൻ⤑ਛ䈪ᰳ㒱䈏⊒↢䈜䉎䇯䈖䉏䉌䈱ᰳ㒱䈮䉋䉎䊃䊤䉾䊒䉕䈚䈢䊃䊮䊈䊦䊌䉴䈏ᒻᚑ䈘䉏䇮
FGౝ䈱㔚⩄㔚䈏䈐䉎䋨RILC: Radiation induced Leakage Current䋩䇯Cellere䉌䈲䇮䊜䊝䊥
ᜬ․ᕈ䈍䉋䈶䉴䊃䊧䉴ශടታ㛎䉋䉍䇮RILC䈏SILC䈫ห᭽䈭ਇⷙೣᕈ䉕ᜬ䈧䈖䈫䉕䈚䇮䈖䈱ਇⷙೣ
ᕈ䈲ᰳ㒱Ḱ䈱㔚ሶභ⁁ᘒ䈱ᄌൻ䈮䉋䉎䉅䈱䈫䈚䈢[13]䇯
࿑ 3.1.4-39䈮␜䈜䉋䈉䈭FG䊜䊝䊥䊂䊋䉟䉴䈲䇮RILC䈮ኻ䈚䈩ᗵฃᕈ䈏㜞䈇䇯䈱FG䊜䊝䊥
࿑ 3.1.4-35 Static䊝䊷䊄䈱
SEUᢿ㕙Ⓧ
࿑ 3.1.4-36 Dynamic Read䊝䊷䊄䈱SEU
ᢿ㕙Ⓧ
࿑ 3.1.4-37 Dynamic Read / write䊝䊷
䊄䈱SEUᢿ㕙Ⓧ
࿑ 3.1.4-38 Dynamic Read / Erase / write
䈪䈲ᢙජ⒟ᐲ䈱㔚ሶᵈ䈮䉋䉍⸥ᙘ䈏ⴕ䉒䉏䉎䈢䉄䇮䊃䊮䊈䊦㉄ൻ⤑䈱䊥䊷䉪㔚ᵹᄌൻ䈮ኻ䈚䈩
㕖 Ᏹ 䈮 ᢅ ᗵ 䈪 䈅 䉎 䇯 ᧄ ⺰ ᢥ 䈪 䈲 䇮 ᦨ ᣂ
4Mbit FG 䊜䊝䊥䊂䊋䉟䉴䈱 RILC 䈮䉋䉎․
ᕈᄌൻ䈮䈧䈇䈩ᬌ⸛䉕ⴕ䈦䈢䇯
DUT䈲8䉶䉪䉺䊷䈮ಽഀ䈘䉏䈢䊃䊮䊈䊦㉄
ൻ⤑ෘ䋺⚂10nm䈱NORᒻFG䉝䊧䉟䈪䈅
䉍䇮W/E䉰䉟䉪䊦10ਁ࿁એ䇮ᜬᤨ㑆10
ᐕએ䈏⸽䈘䉏䈩䈍䉍䋨ᦨᄢ 512MB䋩䇮㕖
Ᏹ䈮䊥䊷䉪㔚ᵹ䈏ዊ䈘䈇䉶䊦䈫䈭䈦䈩䈇䉎䇯䉁
䈢 䇮 ․ ᱶ 䈭 ᷹ ቯ ⵝ ⟎ 䈍 䉋 䈶 Direct
Memory Access (DMA)䉝䊦䉯䊥䉵䊛
䉕↪䈜䉎䈖䈫䈮䉋䉍䇮ฦ䉶䊦䈱VTH᷹
ቯ䈏น⢻䈪䈅䉎䇯
㊀ 䉟 䉥 䊮 ᾖ 䈲 Laboratori
Nazionali di Legnaro (INFN: 䉟䉺䊥
䉝)䈱15MeV䉺䊮䊂䊛ടㅦེ䉕↪䈇䈩䇮
Au (273MeV, SiO2 㕙 䈪 䈱
LET=85MeVcm2/mg) 䈍 䉋 䈶 I
(286MeV, LET=65MeVcm2/mg)䈮䈧䈇䈩ⴕ䈦䈢䇯
࿑ 3.1.4-40䈮166ᤨ㑆䋨⚂1ㅳ㑆䋩ᜬ⹜㛎ᓟ䈱Vthᄌൻ䈫Au䉟䉥䊮ᾖᓟ䈱Vthᄌൻ䈫䈱
㑐ଥ䉕␜䈜䇯࿑䈎䉌䇮ᜬ⹜㛎䈲㕖Ᏹ䈮⍴䈇ᦼ㑆䈪䈅䉎䈮䉅㑐䉒䉌䈝䇮Au 䉟䉥䊮ᾖᓟ䈱 Vth ᄌ
ൻ䈫ห⒟ᐲ䈪䈅䉎䈖䈫䇮ᜬ⹜㛎䈮䉋䉎 Vth ᄌൻ䈲ᦠ䈐ㄟ䉁䉏䈢 Vth 䈱୯䈮ଐሽ䈚䈩䈇䈭䈇䈖䈫䈏
ಽ䈎䉎䇯
Cellere 䉌䈲ᭂ⭯㉄ൻ⤑䈱ഠൻ䊜䉦䊆䉵䊛䈫䈚䈩䇮ᓥ᧪䈎䉌ឭ᩺䈘䉏䈩䈇䉎᳓⚛䉟䉥䊮䉇䇮䊖䊷䊦
䈭䈬ᱜ㔚⩄䈱⒖േ䉇䇮FG⫾Ⓧ㔚⩄䈱㔚㔚ᵹ䈪䈲䈭䈒䇮㉄ൻ⤑ౝ䈱ᱜሹ䇮㔚ሶ䈱ౣ⚿ว䈠䈱䉅䈱
䈫䈜䉎⺑䉕ឭ᩺䈚䈩䈇䉎䇯
࿑ 3.1.4-41䈮ૐ Vth䋨FG䈮ᱜሹ⫾Ⓧ䋩䉕ᦠ䈐ㄟ䉖䈣ᓟ䇮Au 䉟䉥䊮ᾖᓟ䇮166 ᤨ㑆ᜬ⹜㛎
䋨EXPERIMENT 1-3䋩䉕➅䉍䈚䈢ᤨ䈱VthಽᏓ䈱ᄌൻ䉕␜䈜䇯ૐVth䈱䊁䊷䊦䈲ᾖ䈮䉋䉎
䉅䈱䈪䇮⋧ᒰ䈜䉎䉶䊦ᢙ䈲 230 䈪䈅䉎䇯ᜬ࿁ᢙ䈮䉋䉎ᄌൻ䈲ή䈒䇮䈖䉏䈲㜞Vth 䉕ᦠ䈐ㄟ䉖䈣႐
ว䋨FG 䈮㔚ሶ䉕ᵈ䋩䉅ห᭽䈪䈅䈦䈢䇯৻ᣇ䇮䉶䊦Ფ䈮䇮ᜬ࿁ᢙᲤ䈱 Vth ᄌൻ䉕䉎䈫䇮࿑
3.1.4-42䈮␜䈜䉋䈉䈮䇮䉶䊦Ფ䈮ਇⷙೣ䈭ะ䈏䉄䉌䉏䈢䇯䈖䈱䉋䈉䈭ะ䈲 SILC䋨Streaa
Induced Leakage Current䋩䈮䉌䉏䉎ะ䈫ห᭽䈪䈅䉍䇮SILCห᭽䇮䊌䊷䉮䊧䊷䉲䊢䊮䊌䉴䈱ዉ
㔚₸ᄌൻ䈱ਇⷙೣᕈ䈮࿃䈜䉎䉅䈱䈫ផቯ䈚䈢䇯
࿑ 3.1.4-39৻⥸⊛䈭FG䊜䊝䊥䉶䊦䈱ᢿ㕙
࿑ 3.1.4-40 166ᤨ㑆ᜬᓟ䈱Vthᄌൻ䈫Au䉟䉥䊮
(5) NIEL䋨㕖䉟䉥䊮ൻ䉣䊈䊦䉩䊷៊ᄬ䋩䈮㑐䈜䉎⊒
ಽ㈩ଥᢙQߩࡦ࠼ࡂ࡞࠻⸘▚ߩ⸃ᨆߣSRIM⸘▚߆ࠄᓧࠄࠇߚଥᢙߪޔ100keVએਅߩ
ࠗࠝࡦߦࠃࠆࠛࡀ࡞ࠡ៊ᄬࠍㆊዊ⹏ଔߒߡࠆޕߎࠇߪ‛⾰ਛߩࠗࠝࡦߦ߅ߌࠆ㔚ሶ៊ᄬ
ߩㆊᄢ⹏ଔߦࠃࠆ⚿ᨐߢࠆޕAkkermanࠄߪ500KeVએਅߩૐࠛࡀ࡞ࠡߦኻߔࠆᣂߒ
ಽ㈩ଥᢙࠍ․ߦ㐿⊒ߐࠇߚࡕࡦ࠹ࠞ࡞ࡠࠦ࠼ߦࠃߞߡ⸘▚ߒߚ[14]ޕᣂߚߥQ୯ߪޔᓥ
᧪ߩ⚿ᨐࠃࠅ߽ᄢ߈ߊޔߒ߆߽ޔᦨㄭ⊒ߐࠇߚࠪࠦࡦࡈࠜ࠻࠳ࠗࠝ࠼ࠍ↪ߚ㔚㔌᷹
ቯߩታ㛎࠺࠲ߣ⦟ߊ৻⥌ߒߡࠆޕ㔚ሶߣ㓁ሶߩ㕖ࠗࠝࡦൻࠛࡀ࡞ࠡ៊ᄬ㧔NIEL㧕ࠍ⸘
▚ߔࠆߚߦޔᣂߒಽ㈩ଥᢙࠍ↪ߒߚޕߘߩ⚿ᨐߪᓥ᧪ߩ⚿ᨐࠃࠅ߽15㧑ᄢ߈ߎߣ߇
ࠊ߆ߞߚޕ
✢៊்䉕⸘▚䈜䉎ലᨐ⊛䈭ᣇᴺ䈫䈚䈩䉣䊈䊦䉩䊷៊ᄬ䋨NIEL䋩䊌䊤䊜䊷䉺䉕䈉䈖䈫䈪䈅䉎䇯
NIEL䈲‛⾰ਛ䉕⒖േ䈚䈩䈇䉎☸ሶ䈮䉋䉎න㐳䈘䈅䈢䉍䈮៊ᄬ䈜䉎䉣䊈䊦䉩䊷䈫䈚䈩ቯ⟵䈘䉏䈩䈇
䉎䇯
TdT T Q A
N E
NIEL TT E
dT d
A ( ) ( )
) (
0 max min
0 ³ V (1)
䈖䈖䈪NA䈲䉝䊗䉧䊄䊨䈱ᢙ䇮A䈲ේሶ㊂䈪䈅䉎䇯dV/dT䈲ోᓸಽᢿ㕙Ⓧ䈪䈅䉎䇯Tmin䈫Tmax䈲ᦨዊ
䈫ᦨᄢ㒢䈱䉣䊈䊦䉩䊷䇮Q(T)䈲ಽ㈩ଥᢙ䇯䉟䉥䊮䈎䉌䉣䊈䊦䉩䊷T 䉕ฃ䈔ข䈦䈩䇮〡䈜䉎ේ
ሶ䈲䇮ઁ䈱ේሶ䈫䈱䉪䊷䊨䊮ᒢᕈ䊶㕖ᒢജ⊛ᢔੂ䉕ⴕ䈇䇮䉣䊈䊦䉩䊷䉕ᄬ䈦䈩䇮䉋䉍ૐ䈇䉣䊈䊦䉩䊷
䈮ォ⒖䈜䉎䇯ಽ㈩ଥᢙQ(T)䈲䇮ⓨሹᩰሶ㑆ේሶኻ䉕↢ᚑ䈘䈞䉎ᦨዊ䉣䊈䊦䉩䊷 (䉲䊥䉮䊮䈮ኻ䈚䈩
䈲Tmin=21eV) 䈱Tmin䈮㆐䈜䉎䉁䈪䈱ᄌ䈮䉋䉎T䈱㑐ᢙ䈪䈅䉎䇯᭽䇱䈭᧚ᢱਛ䈱NIEL䉕᳞䉄
䉎䈖䈫䈲䇮f(T)=(1/V)dVdT 䉕䈜䈖䈫䈮Ꮻ⚿䈜䉎䇯㔚ሶ䈮ኻ䈚䈩䈲䇮䊝䉾䊃⋧ኻ⺰⊛ᢿ㕙Ⓧ䉕䈦
䈩ᱜ⏕䈮⸘▚䈜䉎䈖䈫䈏䈪䈐䉎䇯㓁ሶ䋨ਛᕈሶ䋩䈶㜞䉣䊈䊦䉩䊷㊀䉟䉥䊮䈮䈍䈔䉎 f(T)䈱⸘▚䈲䇮
࿎㔍䈪䈅䉎䇯Akkerman䉌䈲ᣂ䈚䈒䊝䊮䊁䉦䊦䊨䉮䊷䊄䉕㐿⊒䈚䇮䉲䊥䉮䊮ਛ䈱500keV䉁䈪䈱䉣䊈䊦
䉩䊷䉕䈋䈢⇣䈭䉎䉟䉥䊮䈱Q(T)䉕⸘▚䈚䈢䇯
࿑ 3.1.4-41 ૐ Vth 䉕ᦠ䈐ㄟ䉂ᓟ䇮Au 䉟䉥䊮䉕ᾖ
䇮166ᤨ㑆ᜬ䉕➅䉍䈚䈢ᤨ䈱䌖䌴䌨ಽᏓᄌൻ ࿑ 3.1.4-42 ⵍᾖFGߩVthᄌൻޕ1࿁⋡
䊝䊂䊦䈱ၮᧄ䈲 120-190eV 䈪 Z-6-14 䈮ㆡ↪䈪䈐䉎䈖䈫䈏⏕⸽䈘䉏䈩䈇䉎2 㑆ⴣ⓭(Binary
Collision)䈪䈅䉍䇮䈖䉏䈮ⴣ᠄䉕✭䈜䉎ലᨐ䉕ઃട䈜䉎䇯ᒢᕈ䉪䊷䊨䊮ᢔੂ䈪䈲䉴䉪䊥䊷䊆䊮䉫䊘䊁
䊮䉲䊞䊦䉕⠨ᘦ䈚䇮(dE/dx)nuc䉕⸘▚䈚䇮SRIM䈱⸘▚䈫৻⥌䈜䉎⚿ᨐ䉕ᓧ䈢䇯
㕖ᒢᕈ㔚ሶᢔੂ䈪䈲ૐ䉣䊈䊦䉩䊷䉟䉥䊮䈪䈱ᦨㆡ䈭䉣䊈䊦䉩䊷៊ᄬ䉕᳞䉄䉎䈖䈫䈏㊀ⷐ䈪䈅䉎䇯
࿑ 3.1.4-43䈮ಽ㈩ଥᢙ䈮䈧䈇䈩䈱⸘▚⚿ᨐ䉕Siਛ䈱Ne, C, O䈮䈧䈇䈩ታ᷹୯䈫䈮␜䈜䇯
⸘▚⚿ᨐ䈲ᓥ᧪䊝䊂䊦䈏ㆊᄢ⹏ଔ䉕ਈ䈋䉎䈱䈮ኻ䈚䇮ታ᷹୯䈫⦟䈒৻⥌䈚䈩䈇䉎䇯࿑ 3.1.4-44䈲䇮
Geਛ䈱K䉟䉥䊮䈏䉟䉥䊮ൻ䈜䉎䈢䉄䈮ᶖ⾌䈘䉏䉎䉣䊈䊦䉩䊷䈱Ყ₸䉕ታ᷹୯䈫䈮␜䈚䈢䉅䈱䈪䇮
䈖䈖䈪䉅⦟䈇৻⥌䈏ᓧ䉌䉏䈩䈇䉎䇯
䈠䈖䈪䇮ᰴ䈮 NIEL 䈱⸘▚䉕Siਛ䈱㔚ሶ䈮䈧䈇䈩ⴕ䈦䈢⚿ᨐ䉕࿑ 3.1.4-45䈮␜䈜䇯䉅䈦䈫䉅
䈮⟎䈜䉎䊤䉟䊮䈏 Akkerman 䉌䈱䊝䊂䊦䈮䉋䉎⸘▚⚿ᨐ䈪䇮Summers 䈱䊂䊷䉺䈫⦟䈒৻⥌䈚䈩
䈇䉎䇯࿑ 3.1.4-46䈲䊒䊨䊃䊮䈱 Si ਛ䈱 NIEL 䈱⸘▚୯䈱ᢥ₂୯[16]䈫䈱Ყ䉕␜䈚䈢䉅䈱䈪䇮
Coulomb៊ᄬ䈣䈔䉕⠨ᘦ䈚䈢႐ว䈲15%⒟ᐲ㜞䉄䈱⹏ଔ䈮䈭䉎䈱䈮ኻ䈚䇮Total䈱NIEL䈮ኻ䈚
䈩䈲10MeVએ䈪㕖Ᏹ䈮⦟䈇৻⥌䉕ᓧ䈩䈇䉎䈖䈫䈏ಽ䈎䉎䇯
࿑ 3.1.4-43 SiਛNe, O, C䉟䉥䊮䈱ಽ㈩ଥᢙ䈱 ⸘▚୯䈫ታ᷹୯䈱Ყセ
࿑ 3.1.4-44 GeਛK䉟䉥䊮䈱䉟䉥䊮ൻ䈮ᶖ⾌䈘䉏 䉎䉣䊈䊦䉩䊷䈱Ყ₸䈮䈧䈇䈩䈱ታ᷹୯䈫⸘▚୯䈱 Ყセ
࿑ 3.1.4-45 Si ਛ㔚ሶ䈱⸘▚୯䈫 Summers 䈱
䊂䊷䉺䈫䈱Ყセ ࿑ 3.1.4-46 Siਛ㓁ሶ䈱NIEL⸘▚⚿ᨐ䈱ᢥ₂୯
3.1.4.3 ߹ߣ
(1) ቝቮ䊶⥶ⓨᯏ䊶䈱ᄦ䇱䈪ᓸ⚦ൻ䈮䈉ඨዉ䊂䊋䉟䉴䈱䉣䊤䊷䈏䊝䊷䊄䈫䈮ᄢ䇮ᷓೞൻ
䈚䈩䈇䉎䈖䈫䈏㞲ൻ䈚䈧䈧䈅䉎䇯
(2) 䉕䉄䊨䉳䉾䉪䊂䊋䉟䉴䈱SET㗴䈏৻ጀ㗼ൻ䈚䈩䈇䉎䇯SET䊌䊦䉴䈱⹏ଔ㗴䈏ὶ
⋲䈪䇮䊌䊦䉴ᵄᒻ䉇䇮䊌䊦䉴䈱⸘᷹ᚻᴺ䈮䈧䈇䈩䈱⼏⺰䈲ᓟ䈫䉅ᷓ䉁䉎䈫੍ᗐ䇯
(3) ቝቮ䈪䈲SEB,TID䈏ਛᔃ䇯․䈮䇮Flash䊜䊝䊥䈱RILC䈏ᵈ⋡䈘䉏䈩䈇䉎䇯
(4) ਛᕈሶ䉣䊤䊷䈮㑐䈚䈩䈲ᣉ⸳䊶ᚻᴺ㑆䈱䊔䊮䉼䊙䊷䉨䊮䉫䇮ᮡḰൻ䈏ㅴⴕ䇯ᣉ⸳㑆䈱Ყセ⊛⦟
䈇⚿ᨐ䈏␜䈘䉏䈢䈏䇮⇣䈭䉎⚿ᨐ䉕␜䈚䈩䈇䉎ႎ๔䉅ㆊᄙ䇱䈅䉍䇮ᓟ䈫䉅⛮⛯⊛䈭ᬌ⸛䈏ᔅ
ⷐ䈫ᕁ䉒䉏䉎䇯
(5) ᣂ䈚䈇䊂䊋䉟䉴䉇ᓸ⚦ൻ䈮ኻᔕ䈚䈩ᣂ䈚䈇䉣䊤䊷䊝䊷䊄䈏Flash䊜䊝䊥䋨Page/Block䉣䊤䊷䇮ㄝ
࿁〝䈱䉣䊤䊷䋩䉇D-F/F䋨Off⁁ᘒ䈱Transmission gate䈱SETવ䋩䈭䈬䈪⊒↢䈏ႎ๔䈘䉏䈢䇯
ㄝ࿁〝࿃䈪䊜䊝䊥䈏ᢙᄙ䈒䉣䊤䊷䈮䈋䉎䊝䊷䊄䈲 DRAM䈪ᢙᄙ䈒ႎ๔䈘䉏䈩䈍䉍䇮ၮᧄ⊛
䈮䈲⺰ℂ࿁〝䈱䉣䊤䊷䈏⏕䈮䈋ᆎ䉄䈢䈫⚿⺰䈪䈐䉎䇯
㩷
㩷
3.1.4.4 ෳ⠨ᢥ₂
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E., Schmidt, J., U. Zeimer, Wang, L., Weyers, M., J. Wurf, and G. Trunkl,, "Proton and
Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices," TNS, Vol.53, No.6, pp. 3661-3666 (2006).
[12] Oldham, T.R., Ladbury, R.L., Friendlich, M., Kim, H.S., Berg, M.D., Irwin, T.L., C.
Seidleck, and LaBel, K.A., "SEE and TID Characterization of an Advanced
Commercial 2Gbit NAND Flash Nonvolatile Memory," TNS, Vol.53, No.6, pp. 3217-3222 (2006).
[13] Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., and Beltrami, S., "Single
Event Effects in NAND Flash Memory Arrays," TNS, Vol.53, No.4, pp. 1813-1818 (2006).
[14] Akkerman, A., and Barak, J., "New Partition Factor Calculations for Evaluating the㩷
Damage of Low Energy Ions in Silicon," TNS, Vol.53, No.6, pp. 3667-3674 (2006). [15] Tilinin, S., “Impact-parameter dependence of inelastic energy losses in slow
3.2ᬌ⸛ᢥ₂
3.2.1 䊂䉳䉺䊦CMOS䊤䉟䊑䊤䊥䈱ὑ䈱વ៝SET⹏ଔᣇᴺ
ᢥ₂ฬ Propagation SET Characterization Technique for Digital CMOS Libraries
ౖ IEEE Transaction on Nuclear Science, Vol.53, No.6, pp. 3472- 3478, Dec. 2006.
⪺⠪ฬ M. P. Baze, J. Wert, J. W. Clement, M. G. Hubert, A. Witulski, O. A. Amusan, L. Massengill, and D. McMorrow
ኻ⽎䊂䊋䉟䉴 0.13Ǎm CMOS/Bulk
ታ㛎⸳ Lawrence Berkley National Laboratories (LBL)
ᾖ✢⒳䈶 䉣䊈䊦䉩䊷䈱ಽ
㊀䉟䉥䊮
LET䋺 < 120MeV-cm2/mg
න⊒⽎䈲 Ⓧ▚✢㊂ലᨐ䈱ಽ
න⊒⽎
ታ㛎䈲ℂ⺰䈱ಽ ታ㛎
(1) ⷐ
⚵ว䈞䊨䉳䉾䉪䉶䊦ౝ䈪⊒↢䈜䉎SET (Single Event Transient)䈲䇮ㄭᐕ䈱ᓸ⚦ൻ䈘䉏䈢䊂䉳
䉺䊦CMOS࿁〝䈮䈍䈇䈩㕖Ᏹ䈮ᷓೞ䈭䉣䊤䊷Ḯ䈪䈅䉍䇮䈖䉏䉌䈱㒐ᱛኻ╷䉕⠨䈋䉎䈪䈲䇮䉁䈝䈲
⊒↢䈜䉎SET䉕ല₸⊛䈮⹏ଔ䈜䉎ᚻᴺ䈏ᔅⷐ䈪䈅䉎䇯䉁䈢䇮ASIC↪䈱䉴䉺䊮䉻䊷䊄䉶䊦䊤䉟䊑䊤䊥
䉕᭴▽䈜䉎䈪䈲䇮⸥SET ⹏ଔ䉕൮⊛䈮䇮䉁䈢䉋䉍ല₸⊛䈮ታᣉ䈚䈩ᔅⷐ䈭䊂䊷䉺䉕ขᓧ䈚䇮
࿁〝䉁䈢䈲䊧䉟䉝䉡䊃䈪䈱SET 㒐ᱛኻ╷䉕⻠䈛䉎ᔅⷐ䈏䈅䉎䇯ᧄ⺰ᢥ䈪䈲䇮䊂䉳䉺䊦࿁〝ਛ䈮
⊒↢䊶વ៝䈜䉎SET䉕⹏ଔ䈜䉎ὑ䈱䉲䊮䊒䊦䈭ૐㅦേ䊶㕖หᦼ䈱⹜㛎࿁〝䈶⹜㛎ᣇᴺ䉕ឭ᩺
䈜䉎䇯130nm Bulk/CMOS 䊒䊨䉶䉴䈱䉴䉺䊮䉻䊷䊄䊤䉟䊑䊤䊥䉕䈮䇮SET ⹏ଔ↪䈱⹜㛎࿁〝䉕⸳
⸘䇮㊀䉟䉥䊮ᾖ䈮䉋䉎䊂䊷䉺䉕␜䈚䇮ឭ᩺䈜䉎࿁〝䊶⹜㛎ᣇᴺ䈎䉌ዉ䈐䈘䉏䈢⚿ᨐ䉕ᬌ⸽䈜䉎䇯
(2) ᐨ⺰
৻⥸⊛䈭䊂䉳䉺䊦CMOS࿁〝䈮䈍䈇䈩SEU䈏⊒↢䈜䉎䊒䊨䉶䉴䈲䇮ᰴ䈱2䈧䈱䊌䉺䊷䊮䈏⠨
䈋䉌䉏䉎䇯㽲㗅ᐨ䊨䉳䉾䉪䉶䊦䋨ฦ⒳䊜䊝䊥⚛ሶ䋩ౝ䈪䈱㔚⩄㓸䈮䉋䉎ᜬ䊂䊷䉺䈱ォ䇮㽳⚵ว
䈞䊨䉳䉾䉪䉶䊦ౝ䈪䈱㔚⩄㓸䈮䉋䉍⊒↢䈚䈢SET䈏䇮㗅ᐨ䊨䉳䉾䉪䉶䊦䈻વ៝䇮⺋ାภ䈱䊤䉾䉼䇮
䈮䉋䉎ᜬ䊂䊷䉺䈱ォ䇮䈪䈅䉎䇯䈖䈱ਛ䈪䇮㽳䈱䊌䉺䊷䊮䈮ᵈ⋡䈜䉎䈖䈫䈮䈜䉎䇯SET䊌䊦䉴䈏䊜䊝
䊥⚛ሶ䈮䊤䉾䉼䈘䉏SEU 䈱ේ࿃䈫䈭䉎䈮䈲䇮䈠䈱䊜䊝䊥⚛ሶ䈱Setup/Hold䉕ḩ䈢䈜䉋䈉䈭䈅䉎⒟ᐲ
䈱“䊌䊦䉴”䈏ᔅⷐ䈪䈅䉎䇯ᓥ䈦䈩䇮SET ⹏ଔ䈱䈪䈱䉪䊥䊁䉞䉦䊦䊌䊤䊜䊷䉺䈲“SET 䊌䉴䊦”䈪
䈅䉎䈫⸒䈋䉎䇯SET 䊌䊦䉴⹏ଔ䈱ὑ䈱ᓥ᧪䈱⹜㛎࿁〝䈲䇮䈇䈝䉏䉅หᦼ䊜䊝䊥⚛ሶ䉕↪䈇䈢
Dynamic⹜㛎↪࿁〝䋨 䉲䊐䊃䊧䉳䉴䉺䇮䉁䈢䈲 ⋥ធ⊛䈭SET䊌䊦䉴᷹ቯ䋩䈏↪䈇䉌䉏䈩䈐䇮䈠䈱⚿
ᨐ䈲㕖Ᏹ䈮ല䈪䈲䈅䈦䈢䈏䇮䈖䉏䉌䈱⹜㛎ᣇᴺ䈮䈲䇮㜞ㅦേ䈏น⢻䈭⹜㛎ᴦౕ䈏ᔅⷐ䈪䈅䉍䇮
หᦼ䊜䊝䊥⚛ሶ䈱Setup/Hold䊥䊚䉾䊃䈮ḩ䈢䈭䈇SET䈲ᬌ⍮䈪䈐䈭䈇╬䈱⚂䈏䈅䈦䈢䇯䈠䈖䈪䇮䉋
䊥⚛ሶ䉕↪䈇䈢⹜㛎ᣇᴺ䉕ឭ᩺䈜䉎ޕ
(3) ⹜㛎࿁〝
SET 䊌䊦䉴⹜㛎↪࿁〝䈱ၮᧄ᭴ᚑ䉕䇮࿑ 3.2.1-1䈮␜䈜䇯⹜㛎↪࿁〝䈲䇮(a)SET 䉺䊷䉭䉾䊃
࿁〝䇮(b)SETᑯ࿁〝䇮(c)㕖หᦼ䊤䉾䉼࿁〝䇮䈱3ㇱ᭴ᚑ䈮䈭䈦䈩䈇䉎䇯SET䉺䊷䉭䉾䊃࿁〝䊪䊷
䉴䊃䉬䊷䉴䈱SET䊌䊦䉴⹏ଔ䈱ὑ䈮䇮ᦨዊ䊄䊤䉟䊑䍼⢻ജ䈱䉟䊮䊋䊷䉺䉕ㆬᛯ䈚䈩䈇䉎䇯䉟䊮䊋䊷䉺
䉼䉢䊷䊮䈲䇮33 Ბ䈪᭴ᚑ䈚䈩䈇䉎䇯SET ᑯ࿁〝䋨࿑ 3.2.1-2䋩䈲䇮䉟䊮䊋䊷䉺䉼䉢䊷䊮䈫䉧䊷䊄
䉭䊷䊃䈪᭴ᚑ䈘䉏䈩䈇䉎䇯䉧䊷䊄䉭䊷䊃䈲䇮2ജ1ജ䈪䇮2ജ䈏⇣䈭䉎䊨䉳䉾䉪䈱႐ว䇮ജ䈏
⋥೨䈱⁁ᘒ䉕⛮⛯䈜䉎䇯IN 䈎䉌વ៝䈘䉏䈩䈒䉎 SET䈱䊌䊦䉴䈏ㆃᑧ࿁〝䈱વ៝ㆃᑧᤨ㑆䉋䉍䉅
ዊ䈘䈇႐ว䇮䉧䊷䊄䉭䊷䊃䈮䉋䉍 SET 䈲 OUT 䈻䈲વ៝䈘䉏䈭䈇䇯㕖หᦼ䊤䉾䉼䋨࿑ 3.2.1-3䋩䈲䇮
SET䊂䉞䊁䉪䉺䊷䈱ᓎഀ䉕ᨐ䈢䈚䈩䈇䉎䇯ᦨ䉅䉲䊮䊒䊦䈭࿁〝䈪䈎䈧⁜䈇SET䊌䊦䉴䈪䉅ᬌ⍮䈪䈐
䉎䈱䈏䇮2䈱2NAND䈪᭴ᚑ䈜䉎RS䊤䉾䉼䈪䈅䈦䈢䇯䈖䉏䉌䈱࿁〝䈮䉋䉎SET䊌䊦䉴䈱ᬌ䈲䇮
એਅ䈱⁁ᘒ䈪ⴕ䉒䉏䉎䋨࿑ 3.2.1-4䋩䇯
• TEST=0䈶RESET=0-1-0ㆫ⒖ᓟ䈱UPSET=0䈱ᤨ䈏䇮SET䉶䊮䉲䊁䉞䊑䈭⁁ᘒ䇯 㸢a䈮1-0-1䈱SET䈏વ៝䈘䉏䈢႐ว䇮ᜬ䊂䊷䉺䈏ォ䈚䇮UPSET=1䈫䈭䉎䇯
• RS 䊤䉾䉼䈠䈱䉅䈱䈻䈱㊀䉟䉥䊮䈮䉋䉎䊂䊷䉺ォ䈱น⢻ᕈ䉅䈅䉎䈏䇮䈠䉏䈲䇮ㅜ
RS䊤䉾䉼䉼䉢䊷䊮䈮䈩⹏ଔ䈜䉎䇯
࿑ 3.2.1-1 SETࡄ࡞ࠬ⹜㛎࿁〝ߩၮᧄ᭴ᚑ
࿑ 3.2.1-2 SETᑯ࿁〝
࿑ 3.2.1-3 㕖หᦼ䊤䉾䉼࿁〝
࿑ 3.2.1-4 SET⹜㛎䈱േ
(a)SET䍞䍎䍗䍼䍍䍢࿁〝
(b)SETᑯ࿁〝
(c)㕖หᦼ䍵䍍䍟࿁〝
(a)SET䍞䍎䍗䍼䍍䍢࿁〝
(b)SETᑯ࿁〝
(c)㕖หᦼ䍵䍍䍟࿁〝
a
b
a
b
TEST RESET UPSET
0 0
a b
1 1 䋭
0 1 1 0 0
䉁䈢䇮⹜㛎࿁〝ో䈫䈚䈩䈲䇮࿑ 3.2.1-5䈮␜䈚䈢䈫䈍䉍䈪䇮એਅ䈱ᚻ㗅䈪ታᣉ䈘䉏䉎䇯
• 21⒳㘃䈱⚵ว䈞䊨䉳䉾䉪䉶䊦䈮䈧䈇䈩䇮⸥⹜㛎࿁〝䊑䊨䉾䉪䉕᭴ᚑ䈜䉎䇯
• ၮᧄ⊛䈭䊁䉴䊃䉲䊷䉬䊮䉴䈲䇮
Step 1) RESET䉕0-1-0䈪UPSET䉕0䈮䉶䉾䊃䈜䉎䇯
Step 2) 䉝䊄䊧䉴䉕䉲䊷䉬䊮䉲䊞䊦䈮ᝄ䉍䇮ㅪ⛯䈚䈩ᾖ⹜㛎䉕ታᣉ䈜䉎䇯
Step 3) UPSET(i)=1䈫䈭䈦䈢䉝䊄䊧䉴(i)䉕⸥㍳䈚䇮Step 1)䈮ᚯ䉎䇯
࿑ 3.2.1-5 ⹜㛎࿁〝䊑䊨䉾䉪䈱ో᭴ᚑ
(4) ታ㛎᧦ઙ
ᾖ䈮↪䈚䈢ᣉ⸳䈲䇮Lawrence Berkeley Laboratories䈱88䉟䊮䉼 䉰䉟䉪䊨䊃䊨䊮䈪䈅䉎䇯
⹜㛎᧦ઙ䈫䈚䈩䈲䇮
䊶 㔚䋺1.2V
䊶 ᷷ᐲ䋺ቶ᷷
䊶 䊁䉴䊃䉰䉟䉪䊦䋺200ms (1secᲤ䈮䉣䊤䊷⸥㍳)
䊶 ᾖ㊂䋺<100/s(Fluxes)
䊶 1⹜㛎䈮ઃ䈐107/cm2(Fluence)
⸘29⹜㛎ታᣉ䈚䈢↪ᤨ㑆䈲⚂4ᤨ㑆䈪䈅䈦䈢䇯
(5) ታ㛎⚿ᨐ䈶⠨ኤ
࿑ 3.2.1-6䈮䇮LET 䈮䉋䉎SET䊌䊦䉴䈱᷹ቯ⚿ᨐ䉕␜䈜䇯ォᢿ㕙Ⓧ=10-9cm2/inverter䉕
⸵ኈ᧪䉎ォᢿ㕙Ⓧ䈱䊥䊚䉾䊃䈫䈚䈢႐ว䇮ᧄ䊒䊨䉶䉴(130nmBulk/CMOS)ౝ䈪⊒↢䈜䉎 SET
䈱䊌䊦䉴䈲䇮480ps 䈎䈠䉏䉋䉍䉅ᐢ䈇⒟ᐲ䈪䈅䉎䈖䈫䈏್䈚䈢䇯480ps 䈲䇮䉴䉺䊮䉻䊷䊄䉶䊦䊤䉟
䊑䊤䊥ਛ䈱䉟䊮䊋䊷䉺 20 Ბ䈱䉼䉢䊷䊮䈪䈱વ៝ㆃᑧᤨ㑆䈫ห╬䈪䈅䉎䇯࿑ 3.2.1-7䈲䇮2 ㊀౬㐳
䋨DMR䋩䈶3㊀౬㐳䋨TMR䋩᭴ᚑ䈫䈚䈢࿁〝䈪䈱䇮LET䈮ኻ䈜䉎SEUォᢿ㕙Ⓧ䉕␜䈚䈩䈇䉎䇯
Single䉋䉍䉅DMR䇮TMR䈱ᣇ䈏䇮SET㒐ᱛ䈮䉋䉍ലᨐ⊛䈪䈅䉎䇯DMR/TMR䈲䇮ዊⷙᮨ䈭䊨䉳䉾
䉪࿁〝䈪䈲䇮SETᑯ࿁〝䉋䉍䉅ᅢ䉁䉏䈩↪䈘䉏䉎䇯࿑ 3.2.1-8䈲䇮䉟䊮䊋䊷䉺䉼䉢䊷䊮䈱䊧䉟䉝䉡
䉟䊮䊋䊷䉺㑆䊏䉾䉼䉕䇮2mm 䈫 10mm 䈮ᄌൻ䈘䈞䈢႐ว䇮ォᢿ㕙Ⓧ䈮ᄢ䈐䈭㆑䈇䈲䉌䉏䈭
䈎䈦䈢䇯䉁䈢䇮䉟䊮䊋䊷䉺㑆䈱㓸㔚⩄䉲䉢䉝䊥䊮䉫䈲⊒↢䈚䈩䈇䈭䈇䈫⠨䈋䉌䉏䉎䇯࿑ 3.2.1-9䈲䇮
TID ኻ╷䉕ᣉ䈚䈢䉟䊮䊋䊷䉺䈪䈱 SEU ォᢿ㕙Ⓧ䉕␜䈚䈩䈇䉎䇯✢ኻ╷ή䈚䈱䉟䊮䊋䊷䉺䈫
TIDኻ╷䉕ᣉ䈚䈢䉟䊮䊋䊷䉺䈫䉕Ყセ䈜䉎䈫䇮TIDኻ╷䉍䈱ᣇ䈏ォᢿ㕙Ⓧ䈏ᄢ䈐䈇䇯TIDኻ╷䈫
䈚䈩ઃ䈔ട䈋䉌䉏䈢䉶䊦㕙Ⓧ䈏䇮SET⠴ᕈഠൻ䈮ᓇ㗀䈚䈩䈇䉎䈫⠨䈋䉌䉏䉎䇯
࿑ 3.2.1-6 LET䈮䉋䉎SET䊌䊦䉴㩷
࿑ 3.2.1-7 ౬㐳᭴ᚑ࿁〝䈪䈱ォᢿ㕙Ⓧ
࿑ 3.2.1-8 ࠗࠕ࠙࠻ߩ㆑ߦࠃࠆォᢿ㕙Ⓧ
࿑ 3.2.1-9 TIDኻ╷࡞ߩォᢿ㕙Ⓧ
(6) ⚿⺰
䊂䉳䉺䊦CMOS࿁〝䈱ല₸⊛䈭SET⹏ଔ䈱ὑ䈱䇮ᄙ⋡⊛䈎䈧䉲䊮䊒䊦䈭⹜㛎࿁〝䉕ឭ᩺䈚䇮
130nmBulk/CMOS 䉕䈮 SET 䊌䊦䉴䈱᷹ቯ䉕ⴕ䈦䈢䇯ឭ᩺䈚䈢⹜㛎࿁〝䈲䇮䉴䉺䊮䉻䊷䊄䉶
䊦એᄖ䈮䈲䈢䈦䈢৻䈧䈱䊂䉳䉺䊦࿁〝(Guard Gate)䈱䉶䊦⸳⸘䉕䈜䉎䈣䈔䈪ታ䈪䈐䉎䇮䉲䊮䊒
䊦䈭࿁〝䈪䈅䉎䇯䈖䈱⹜㛎࿁〝䈪䈲䇮䉲䊮䊒䊦䈭࿁〝᭴ᚑ䇮䉋䉍ዊ䈘䈇ኾ㕙Ⓧ䇮㕒⊛⹜㛎ᚻᴺ䈪䇮
䉌䉏䈢SET⹏ଔ⚿ᨐ䉕䉁䈫䉄䉎䈫䇮એਅ䈱䉋䈉䈮䈭䉎䇯
Ԙ ᦨዊ䊄䊤䉟䊑䈱䉟䊮䊋䊷䉺䈪⊒↢䈜䉎SET䈱䊌䊦䉴䈲䇮LET<60MeV(mg/cm2)䈪䈲䇮
500ps䉕䈋䈭䈇䇯SET㒐ᱛ䈮䈲䇮ᦨᄢ500ps䈱SET䉕㒐ᱛ䈜䉎䉋䈉䈭ᑯ࿁〝䉕↪䈇䉏䈳
䉋䈇䇯
ԙ DMR/TRM᭴ㅧ䈱䉋䈉䈭౬㐳࿁〝᭴ᚑ䈲䇮SET㒐ᱛ䈮ല䈪䈅䉎䇯
Ԛ TIDኻ╷䉕ᣉ䈚䈢䉶䊦䈲䇮SETォᢿ㕙Ⓧ䈏Ⴧട䈜䉎䋨SET⠴ᕈ䈏ᷫዋ䋩䇯䈖䉏䈲䇮TIDኻ
3.2.2 䉲䊮䉫䊦䊶䉟䊔䊮䊃䊶䊃䊤䊮䉳䉢䊮䊃䈱䊁䉪䊉䊨䉳䊷䊉䊷䊄䈮䉋䉎ะ
ᢥ₂ฬ Digital Single Event Transient Trends With Technology Node Scaling
ౖ IEEE Transaction on Nuclear Science, Vol.53, No.6, pp. 3462 - 3465, Dec. 2006.
⪺⠪ฬ J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger
ኻ⽎䊂䊋䉟䉴 0.25, 0.18, 0.13Ǎm CMOS
ታ㛎⸳ Brookhaven National Laboratories (BNL), Lawrence Berkley National Laboratories (LBL)
ᾖ✢⒳䈶 䉣䊈䊦䉩䊷䈱ಽ
㊀䉟䉥䊮
LET䋺 60MeV-cm2/mg
න⊒⽎䈲 Ⓧ▚✢㊂ലᨐ䈱ಽ
න⊒⽎
ታ㛎䈲ℂ⺰䈱ಽ ታ㛎
(1) ⷐ
นᄌㆃᑧ䊤䉾䉼(programmable delay temporal latch)䉕↪䈇䈩0.25, 0.18, 0.13㱘m CMOS
䈮䈧䈇䈩SET䈱ᢿ㕙Ⓧ䉕᷹ቯ䈜䉎䈖䈫䈮䉋䉍䇮䊁䉪䊉䊨䉳䊷䊉䊷䊄䈮䉋䉎ะ䉕⹏ଔ䈚䈢䇯SET䈱䊌
䊦䉴䈍䉋䈶ᢿ㕙Ⓧ䈱ᦨᄢ୯䈲ਥ䈮㔚Ḯ㔚䈮ଐሽ䈚䇮ਔ⠪䈲േ㔚䉕ਅ䈕䉎䈫⪺䈚䈒Ⴧട䈜
䉎䈖䈫䈏䉒䈎䈦䈢䇯
(2) ᐨ⺰
వ┵ᛛⴚ䈱 CMOS 䈪䈲 SET 䈏⺋േ䈱ਥⷐ䈭ⷐ࿃䈮䈭䈦䈩䈇䉎䈖䈫䈏䉌䈎䈮䈘䉏䈩䈇䉎
[1]-[5]䇯䈖䉏䉁䈪䇮PDTL(programmable delay temporal latch䇮એᓟ ’นᄌㆃᑧ䊤䉾䉼’ 䈫䈜)
䉕↪䈇䈩0.25䈫0.18㱘m 䊂䊋䉟䉴䈱SET䊌䊦䉴䉕᷹ቯ䈚䈢⚿ᨐ䈏ႎ๔䈘䉏䈩䈇䉎[6]䇯䈠䉏䈮䉋
䉎䈫䊁䉪䊉䊨䉳䊷䊉䊷䊄䈫㔚䈱䉴䉬䊷䊥䊮䉫䈏ㅴ䉃䈫SET䈱㗴䈏ᖡൻ䈜䉎䈖䈫䈏␜䈘䉏䈢䇯
ੑ䈧䈱ℂ↱䈮䉋䈦䈩䇮SET 䈲ᓟ䈱䊂䉳䉺䊦࿁〝䈱䉸䊐䊃䉣䊤䊷䈱㊀ⷐ䈭ⷐ࿃䈮䈭䉎䇯৻䈧䈮䈲
䊁䉪䊉䊨䉳䊷䊉䊷䊄䈱䉴䉬䊷䊥䊮䉫䈮䉋䉍SET䊌䊦䉴䈲ข䉍ㄟ䉁䉏䉎䈮චಽ䈭ᄢ䈐䈘䈱䊌䊦䉴䈫ᝄ
䉕ᜬ䈧䉋䈉䈮䈭䉎䈖䈫䇯ੑ䈧⋡䈮䈲േᵄᢙ䈏㜞䈒䈭䉎䈢䉄 SET 䈏ข䉍ㄟ䉁䉏䉎⏕₸䈏Ⴧᄢ䈜䉎
䈢䉄䈪䈅䉎䇯⚵䉂ว䉒䈞࿁〝䈱䉣䊤䊷ᢿ㕙Ⓧ䈲㗅ᐨ࿁〝䉋䉍䉅䈲䉎䈎䈮ᄢ䈐䈇䈢䉄䇮SET 䈱㗴䈏
ᓟ䉁䈜䉁䈜ᄢ䈐䈒䈭䈦䈩䈒䉎䇯䈖䉏䉁䈪䈱⎇ⓥ䉇䊝䊂䊥䊮䉫䈪䉅 SET 䈏⚵䉂ว䉒䈞⺰ℂ࿁〝䉕વ
៝䈚䈩䉉䈒䈖䈫䈏ႎ๔䈘䉏䈩䈇䉎[7]-[12]䇯
ᧄ⺰ᢥ䈪䈲SET䈱䊌䊦䉴䈫ᢿ㕙Ⓧ䈏䊁䉪䊉䊨䉳䊷䊉䊷䊄(0.25, 0.18, 0.13㱘m)䈫േ㔚(2.0,
1.5, 1.25, 1.0V)䈪䈬䈱᭽䈮ᄌൻ䈜䉎䈎⺞䈼䈢䉅䈱䈪䈅䉎䇯LET䈲60MeV-cm2/mg䈫৻ቯ䈮䈚䈢䇯
䊁䉪䊉䊨䉳䊷䊉䊷䊄䈫േ㔚䈱䉴䉬䊷䊥䊮䉫䈮䉋䉍SET䈱䊌䊦䉴䈏Ⴧട䈜䉎䈖䈫䉕␜䈜䈏䇮ᱜⷙ䈱
࿑ 3.2.2-2 0.13㱘m䊉䊷䊄䈱㔚Ḯ㔚䈫SETᢿ 㕙Ⓧ䈱㑐ଥ
࿑ 3.2.2-4 0.13㱘m䈱േ㔚䉕ዋ䈚䈕䈩ઁ 䈱䊒䊨䉶䉴䈫ห䈛ಽᏓ䈮䈚䈢䉅䈱㩷
(3) 䊂䉞䉳䉺䊦䉲䊮䉫䊦䉟䊔䊮䊃䈱⹜㛎ⵝ⟎
SET 䈱䊌䊦䉴䈱᷹ቯ࿁〝䈮䈲นᄌㆃᑧ䊤䉾䉼䉕↪䈇䈢䇯นᄌㆃᑧ䊤䉾䉼䈲⸳ቯ䈘䉏䈢ㆃᑧᤨ
㑆䉋䉍⍴䈇䊌䊦䉴䈱 SET 䉕㒰䈚䇮ㆃ
ᑧᤨ㑆䉋䉍䉅㐳䈇䊌䊦䉴䈱 SET 䈲ข䉍
ㄟ䉃䉋䈉䈮⸳⸘䈘䉏䈩䈇䉎[6]䇯ㆃᑧᤨ㑆䈲
㔚ᵹᓮ䈮䉋䉎䉟䊮䊋䊷䉺䈪ᄖㇱ䈎䉌ᓮ
䈪䈐䉎䉋䈉䈮䈭䈦䈩䈇䉎䇯ታ㛎ਛ䈮ㆃᑧᤨ
㑆䉕ᄌൻ䈘䈞䉎䈖䈫䈪ㆊᷰ䊌䊦䉴䈱ᦨᄢ
䉕᷹ቯ䈜䉎䈖䈫䈏᧪䉎䇯
╙ੑ䈱᷹ቯ࿁〝䈫䈚䈩䇮1,000 䈱䉟䊮
䊋䊷䉺䉕䉼䉾䊒䈮⚵䉂ㄟ䉖䈣䇯⹜㛎೨
䈮䉥䉲䊨䉴䉮䊷䊒䈭䈬䉕↪䈇䈩ోㆃᑧᤨ㑆
䉕᷹ቯ䈚䈩䉟䊮䊋䊷䉺䈱ᢙ䈪ഀ䉎䈖䈫䈪䇮
৻Ბᒰ䈢䉍䈱ㆃᑧᤨ㑆䉕᳞䉄䉎䈖䈫䈏
᧪䉎[3]䇯
0.25㱘m䈫0.18㱘m CMOS䉼䉾䊒䈲
TSMC(Taiwan Semiconductor
Manufacturing Company)䈱⺰ℂLSI
↪䉰䊥䉰䉟䊄䊒䊨䉶䉴䈪䈘䉏䇮0.13㱘
m 䈲 IBM 䈪䈘䉏䈢䇯ታ㛎ᣉ⸳䈲
Brookhaven National Laboratories
(BNL)䈫Lawrence Berkley National Laboratories (LBL)䉕↪䈇䈢䇯ਔᣉ⸳䈪ᓧ䉌䉏䈢䊂䊷䉺
䈲⦟䈇৻⥌䈏䉌䉏䈢䇯ᣉ⸳䈱․ᓽ䈎䉌䇮㜞䉟䉥䊮ᵹ᧤䈱䉅䈱䈲BNL䇮㜞LET䈱䉅䈱䈲LBL䉕↪
䈇䈢䇯
࿑ 3.2.2-1 0.18㱘m CMOS䈮䈍䈇䈩㔚䉕ᄌൻ䈘
䈞䈢䈫䈐䈱SET䊌䊦䉴䈫ᢿ㕙Ⓧ䈱㑐ଥ㩷
࿑ 3.2.2-3 ਃ䈧䈱䊉䊷䊄䉕ᮡḰ㔚䈪േ䈘䈞
࿑ 3.2.2-6 DICE䉶䊦䈮䈍䈔䉎䊂䊷䉺ข䉍ㄟ 䉂䉕⺑䈜䉎䉺䉟䊚䊮䉫䉻䉟䉝䉫䊤䊛
࿑ 3.2.2-5 DICE 䉶䊦䈪㔚Ḯ㔚䉕ᄌ䈋䈢
䈫䈐䈱LET䈫SEEᢿ㕙Ⓧ䈱㑐ଥ
(4) ㊀䉟䉥䊮⹜㛎⚿ᨐ䈫ᬌ⸛
࿑ 3.2.2-1䈮䈲䊤䉾䉼䈱ㆃᑧᤨ㑆(SET䈱ᦨᄢ䊌䊦䉴)䈫䉣䊤䊷ᢿ㕙Ⓧ䈱㑐ଥ䉕␜䈚䈢䇯䊂䊋䉟
䉴䈲TSMC䈱0.18㱘m CMOS䈪䈅䉎䇯వ䈮⊒䈚䈢⺰ᢥ[1]䈫ห䈛䈒䊌䊦䉴䈲ᐢ䈒ಽᏓ䈚䈢䇯േ
㔚䈪䊌䊦䉴䈏ᄢ䈐䈒ᄌ䉒䉎䈱䈏್䉎䇯0.18㱘m䈱ᮡḰ㔚䈲1.8V䈪䈅䉍䇮䈖䈱䈫䈐䈱ᦨᄢ䊌䊦䉴
䈲1.5ns䈪䈅䉎䈏䇮䈖䉏䉕1.1V䉁䈪ਅ䈕䉎䈫䊌䊦䉴䈲3ns䉁䈪Ⴧᄢ䈜䉎䇯ห᭽䈱ะ䈲ઁ䈱䊁䉪
䊉䊨䉳䊷䊉䊷䊄䈪䉅䉌䉏䈢ޕ
࿑ 3.2.2-2䈲0.13㱘m CMOS䈮䈧䈇䈩ห᭽䈱᷹ቯ䉕䈚䈢⚿ᨐ䈪䈅䉎䇯SET䊌䊦䉴䈲ᦝ䈮ᐢ
䈇▸࿐䈮ಽᏓ䈚1.1V䈪䈲4.5ns䉕䈋䉎䉅䈱䉅䈅䈦䈢䇯
࿑ 3.2.2-3䈲ਃ䈧䈱䊁䉪䊉䊨䉳䊷䊉䊷䊄䉕ᮡḰ㔚䈪േ䈘䈞䈢⚿ᨐ䈪䈅䉎䇯
0.25㱘m䈫0.18㱘m䈲ห䈛ಽᏓ䈪䈅䉎䈏䇮0.13㱘m䈪䈲ಽᏓ䈏ᐢ䈒䈭䈦䈩䈇䉎䇯
࿑ 3.2.2-4䈲0.13㱘m䈱േ㔚䉕ዋ䈚䈕䈩ઁ䈱䊒䊨䉶䉴䈫ห䈛ಽᏓ⁁ᘒ䈮ว䉒䈞䈢䉅䈱䈪
䈅䉎䇯䈖䉏䈮䉋䈦䈩SET䊌䊦䉴䈱ಽᏓ䈏㔚䈮ଐሽ䈚䈩䈇䉎䈖䈫䈏್䉎䇯
䈖䉏䉁䈪นᄌㆃᑧ䊤䉾䉼䈪᳞䉄䈢䊂䊷䉺䈱ᅷᒰᕈ䉕⺞䈼䉎䈢䉄䇮DICE 䉶䊦䈪䉅⹜㛎䊂䊷䉺䉕
᷹ቯ䈚䈢䇯࿑ 3.2.2-5䈲 200MHz䈱䊂䊷䉺䈪䈅䉎䇯㔚䉕ਅ䈕䉎䈫䇮䊌䊦䉴䈏ᐢ䈏䉎䈢䉄䇮DICE
䉶䊦䈮ข䉍ㄟ䉁䉏䉎 SET 䈏ᄙ䈒䈭䈦䈩䈍䉍䇮นᄌㆃᑧ䊤䉾䉼䈫ห䈛⚿ᨐ䈮䈭䉎䈖䈫䈏䉒䈎䉎䇯ታ㛎䈲
㕒ᱛ⁁ᘒ(0Hz)䈎䉌 500MHz 䉁䈪⹜㛎䈚䈢䈏䇮䈬䉏䉅࿑䈫ห䈛ะ䉕ᓧ䈢䇯㕒ᱛᤨ䈮䈲䉣䊤䊷䈲䉷
䊨䈪䇮ᵄᢙ䈏㜞䈒䈭䉎䈫SET䈱ข䉍ㄟ䉂ᢙ䈏Ⴧട䈚䇮એ೨䈱⺰ᢥ[2]䈫ห᭽䈱⚿ᨐ䉕ᓧ䈢䇯
࿑ 3.2.2-6䈲SET䊌䊦䉴䈏ข䉍ㄟ䉁䉏䉎䉺䉟䊚䊮䉫䉕⺑䈚䈢䉅䈱䈪䈅䉎䇯⸳⸘䈪䈲䉪䊨䉾䉪䈱┙ਅ
䉍䈪䊂䊷䉺䉕ข䉍ㄟ䉃䉋䈉䈮䈭䈦䈩䈇䉎䇯࿑䈱⌀ਛ䈱ੑ䈧䈱䉺䉟䊚䊮䉫䈪䈲SET䊌䊦䉴䈏䉪䊨䉾䉪䈱ข
ㄟ䉂ᦼ㑆䈮䈎䈎䉎䈱䈪ข䉍ㄟ䉁䉏䉎䇯৻⇟䈫ਅ䈲ขㄟ䉂ᦼ㑆䈮ኻ䈚䈩 SET 䊌䊦䉴䈱㆐䈏ᣧㆊ
䈑䈢䉍ㆃㆊ䈑䈢䉍䈜䉎䈱䈪ข䉍ㄟ䉁䉏䈭䈇䇯䈖䈱࿑䈎䉌䉪䊨䉾䉪ᵄᢙ䈏㜞䈒䈭䉍䇮䊌䊦䉴䈏ᐢ䈒䈭䈦
(5) 䉁䈫䉄䈫⚿⺰
ᧄ⺰ᢥ䈪䈲LET৻ቯ䈱ਅ䈪䇮0.25, 0.18, 0.13㱘m䈱䊁䉪䊉䊨䉳䊷䊉䊷䊄䈮䈧䈇䈩േ㔚䉕ᄌ
䈋䈩SET䈱䊌䊦䉴䈫ᢿ㕙Ⓧ䉕⺞䈼䈢䇯䊁䉪䊉䊨䉳䊷䊉䊷䊄䈫േ㔚䈱䉴䉬䊷䊥䊮䉫䈏ㅴ䉃䈫SET
䊌䊦䉴䈏㐳䈒䈭䈦䈩䉉䈒䈖䈫䉕␜䈚䈢䇯䈖䉏䈫ᵄᢙ䈏㜞䈒䈖䈫䈮䉋䉍䇮SET 䈮䉋䉎䉸䊐䊃䉣䊤䊷䈏
ᓟ䈱㊀ⷐ䈭㗴䈮䈭䉎䈖䈫䉕␜䈚䈢䇯ታ㛎䈪䈲นᄌㆃᑧ䊤䉾䉼䈪䊂䊷䉺䉕ขᓧ䈚䈢䈏䇮DICE䉶䊦
䈪䉅ታ㛎䉕ⴕ䈦䈩Ყセ䈜䉎䈖䈫䈪䇮䊂䊷䉺䈱ᅷᒰᕈ䉕⏕䈎䉄䈢䇯
(6) ᢥ₂䈮ኻ䈜䉎⠨ኤ
ᧄ⺰ᢥ䈲ᓥ᧪䈱⺰ᢥ䈱䊂䊷䉺䈮 0.13㱘m 䈱䊂䊷䉺䉕ㅊട䈚䈢䉅䈱䈪䈅䉎䇯⓭䈐䉄䈩ౝኈ䉕ี
䈜䉎䈫䇮0.25䈫0.18㱘m䈪䈲SET䊌䊦䉴䈱Ꮕ䈏䈭䈒䇮0.13㱘m CMOS䉕ᮡḰ㔚䈱1.25V䈪
േ䈘䈞䉎䈫 SET 䈱䊌䊦䉴䈏ᄢ䈮Ⴧᄢ䈚䈩㗴䈮䈭䉎䈫䈇䈉ὐ䉕ਥᒛ䈚䈩䈇䉎䇯䈖䈱䊉䊷䊄䈱
䊂䊷䉺䈣䈔䈪వ䈱ㅢ䈚䉕䉄ઃ䈔䈩䉋䈇䈎䈫䈇䈉⇼䉕↢䈛䉎䇯ITRS 䈱䊨䊷䊄䊙䉾䊒䈪䈲䉅䈦䈫వ
䈱䊉䊷䊄䉁䈪ᮡḰ㔚䉕ឭ␜䈚䈩䈇䉎䈱䈪䇮䉅䈉ዋ䈚ᄙ䈒䈱䊉䊷䊄䈱䊂䊷䉺䉕ข䈦䈩వ䈱ㅢ䈚䉕┙䈩
