䊌䊪䊷MOSFET 䈱䉲䊮䉫䊦䉟䊔䊮䊃䊋䊷䊮䉝䉡䊃䈫䉝䊋䊤䊮䉲䉢․ᕈ

ᢥ₂ฬ Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

಴ౖ IEEE Transactions on Nuclear Science, Vol. 53, No.6,pp. 3379-3385, Dec 2006

⪺⠪ฬ Sandra Liu, Member, IEEE, Milton Boden, Member, IEEE, Dev Alok Girdhar, Senior Member, IEEE, and Jeffrey L. Titus, Senior Member, IEEE

ኻ⽎䊂䊋䉟䉴 ❑ဳ䊌䊪䊷MOSFET, n-ch㩷 ቯᩰ㔚࿶ 600V䈍䉋䈶250V㩷

ታ㛎⸳஻ Texas A&M

ᾖ኿✢⒳෸䈶 䉣䊈䊦䉩䊷䈱඙ಽ

Xe 160䌾2960MeV Kr 160䌾2960MeV න⊒⃻⽎෶䈲

Ⓧ▚✢㊂ലᨐ䈱඙ಽ

න⊒⃻⽎

ታ㛎෶䈲ℂ⺰䈱඙ಽ ታ㛎䈍䉋䈶ℂ⺰

(1) ᭎ⷐ

䊌䊪䊷MOSFET 䈱᡼኿✢⠴㊂䈮䈧䈇䈩䇮ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮⸃ᨆ䉕ⴕ䈇ታ 㛎䈫Ყセᬌ⸽䈚䈢䇯䉲䊮䉫䊦䉟䊔䊮䊃䊋䊷䊮䉝䉡䊃䋨SEB䋩䈲ነ↢䊋䉟䊘䊷䊤䈮⿠࿃䈚䈩䈇䉎䇯SEB 䈲 䉝䊋䊤䊮䉲䉢․ᕈ䈪᳿䉁䉍䇮2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈮ଐሽ䈜䉎䇯SEB䈲䉟䉥䊮ᾖ኿䈣䈔䈪䈭䈒䇮ᾖ኿

䉟䉥䊮䈪⊒↢䈜䉎㔚ሶᱜሹኻ䈫㜞㔚⇇㗔ၞ䈱ಽᏓ⁁ᘒ䈮㑐ଥ䈜䉎䇯2 ㊀䉣䊏ㆡ↪䈫䉸䊷䉴䊄䊷䉵㊂ ૐᷫ䈏600V䊌䊪䊷MOSFET䈱᡼኿✢⠴㊂ะ਄䈮᦭ല䈪䈅䉎䈖䈫䉕ታ㛎䈫䉲䊚䊠䊧䊷䉲䊢䊮䈪␜䈚䇮 250V ຠ䈮䉅ㆡ↪䈚䈢䇯ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮䈲 SEB ੍᷹䈮᦭ല䈪䈅䉍䇮዁᧪䇮ච ಽ䈭᡼኿✢⠴㊂䉕ᜬ䈧䊌䊪䊷MOSFET䉕㐿⊒䈜䉎਄䈪᦭⋉䈭䉿䊷䊦䈫䈭䉎䇯

(2) 䊌䊪䊷MOS䊂䊋䉟䉴᭴ㅧ䈫SEB⎕უ䊜䉦䊆䉵䊛

࿑ 3.2.6-1䈱䉋䈉䈭❑ဳ䊌䊪䊷MOSFET 䈪䈲 N+䉸䊷䉴䇮P 䊗䊂䉞䇮䉣䊏ጀ䈪ነ↢䊋䉟䊘䊷䊤䊃䊤 䊮䉳䉴䉺䉕᭴ᚑ䈚䈩䈇䉎䇯䈖䈱䉋䈉䈭⚛ሶ䈮㊀䉟䉥䊮䈏

౉኿䈜䉎䈫ነ↢䊋䉟䊘䊷䊤䉕䉺䊷䊮䉥䊮䈚ᱜᏫㆶ䈮䉋 䉍䉮䊧䉪䉺㔚ᵹ䈏Ⴧᄢ䈚䇮2 ᰴ䊑䊧䉟䉪䉻䉡䊮䉕ᒁ䈐⿠

䈖䈜䇯䊂䊋䉟䉴䈱᳗ਭ⎕უ䈮⥋䉎(࿑ 3.2.6-1)䇯ᧄ⺰

ᢥ䈲䈖䈱䉋䈉䈭⚛ሶ䈱䉝䊋䊤䊮䉲䉢․ᕈ䇮䊋䉟䊘䊷䊤䊃 䊤䊮䉳䉴䉺䈱䉺䊷䊮䉥䊮․ᕈ䉕䉲䊚䊠䊧䊷䉲䊢䊮䈚䇮㊀ 䉟䉥䊮䈏⚛ሶ䈮౉኿䈜䉎䈫䈐䈮SEB䈏↢䈛䉎䊜䉦䊆䉵 䊛䉕ᬌ⸛䈚䈩䈇䉎䇯

䉲䊚䊠䊧䊷䉲䊢䊮䈮↪䈇䈢⹜ᢱ䈲䇮IR⵾䈱n䉼䊞䊮 䊈䊦MOSFET 600V 䊒䊨䊃䉺䉟䊒R6䈪䈅䉎䇯

䉲䊚䊠䊧䊷䉲䊢䊮䈪䈲䇮䊄䊧䉟䊮㔚ᵹ䊧䊔䊦䈏ૐ䈇䈎

ᾖ኿䈭䈚䈱႐ว䇮ㅢᏱ䉝䊋䊤䊮䉲䉢㔚࿶䈪䈅䉎 704V 䉁䈪䈲ቯᏱᐔⴧ⁁ᘒ䉕଻䈧䇯䉁䈢㔚ᵹ䈏

࿑ 3.2.6-1. Cross-sectional representation of a vertical power MOSFET (not drawn to scale) where the n+ source acts like the emitter, p-body acts like the base and the epitaxial layer acts like the collector of the inherent parasitic bipolar transistor.

9.18×10^-5A એਅ䈪ㆊᷰ䊄䊧䉟䊮㔚࿶䈏 880Vએਅ䈪 䈅䉏䈳䇮᡿㓚䈜䉎䈖䈫䈲䈭䈇䇯䈘䉌䈮㔚࿶䈏505Vએਅ 䈪䈅䉏䈳㔚ᵹ୯ 2.19×10^-3A 䉁䈪⎕უ䈜䉎䈖䈫䈲䈭䈇䇯

৻ᣇ䇮චಽ䈭䉟䉥䊮ᾖ኿䈱႐ว䈪䉅䇮㔚࿶䈏505Vએ ਅ䈪䈅䉏䈳䇮2 ᰴ䊑䊧䉟䉪䉻䉡䊮䉇䊋䉟䊘䊷䊤䉺䊷䊮䉥 䊮䈱᧦ઙ䉕ḩ䈢䈘䈭䈇䈱䈪SEB䈮䈲⥋䉌䈭䈇䇯䈚䈎䈚 䊄䊧䉟䊮䊋䉟䉝䉴䈏505V䉕⿥䈋䇮2ᰴ䊑䊧䉟䉪䉻䉡䊮䈱

᧦ઙ䉕ḩ䈢䈞䈳⽶ᕈᛶ᛫㗔ၞ䈮౉䉍ነ↢䊋䉟䊘䊷䊤 䈏䉥䊮䈚䇮⚛ሶ⎕უ䈮⥋䉎(࿑ 3.2.6-2)䇯

એ਄䈎䉌ᰴ䈱䈖䈫䈏⸒䈋䉎䇯(1)䉟䉥䊮䊎䊷䊛⥄૕䈲

⚛ሶ䈮䉻䊜䊷䉳䉕ਈ䈋䈭䈇䇮(2)䉟䉥䊮ᾖ኿䈎䉌䈱ㆊ

ᷰ㔚ᵹ䈣䈔䈪䈲ነ↢䊋䉟䊘䊷䊤䉕䉥䊮䈚䈭䈇䇮(3)䉟 䉥䊮ᾖ኿૏⟎䈏㊀ⷐ䈪䈅䉍䇮SEB ⎕უ䈲㜞ㆊᷰ㔚 ᵹ䈫ශട㔚࿶䈱⚵䉂ว䉒䈞䈪⊒↢䇯

䈖䈱䉋䈉䈮䇮䉟䉥䊮ᾖ኿䈮䉋䉎SEB⹜㛎䈲䇮ㅒ䊋 䉟䉝䉴⁁ᘒ䈪䈱㔚ሶᱜሹኻᵈ౉䈱ᓇ㗀䉕⹏ଔ䈜䉎 䈖䈫䈫╬ଔ䈫⠨䈋䉌䉏䉎䇯ᓥ䈦䈩ᡆૃቯᏱ䉝䊋䊤䊮 䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮䈮䉋䉍䇮⠴࿶䉇䉥䊮ᛶ᛫䈫䈇䈉ઁ

䈱⚛ሶ․ᕈ䉕ᦨㆡൻ䈚䈧䈧SEB․ᕈ䉕⹏ଔ䊶੍᷹

䈪䈐䉎䇯

(3) SEB⎕უ⠴㊂䈱ะ਄

2ጀ䉣䊏䈮䉋䉎䉝䊋䊤䊮䉲䉢․ᕈᡷༀ

ᓥ᧪䈱නጀ䉣䊏᭴ㅧ䋨Device#1䋩䈮ኻ䈚䇮⎕უ⠴

㊂ะ਄╷䈫䈚䈩䇮1ጀ⋡䈱䉣䊏䉕Ყセ⊛㜞Ớᐲ䈫䈜 䉎 2 ጀ䉣䊏᭴ㅧ䋨Device#2䋩䉕⠨᩺䈚䈢䇯䈖䉏䈮䉋䉍䇮 䉝䊋䊤䊮䉲䉢⊒↢ᤨ䈮1ጀ⋡䈱㔚⇇䉕㜞䈒䈜䉎䈖䈫 䈪䇮䊋䉟䊘䊷䊤䉺䊷䊮䉥䊮㔚࿶䈏900V䈎䉌1180V 䈮䇮䉁䈢2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈏505V䈎䉌578V 䈮ะ਄䈚䈢(࿑ 3.2.6-3)䇯㔚⇇ಽᏓ䈱Ყセ䈪䈲䇮ૐ 䉝䊋䊤䊮䉲䉢㔚ᵹ䊧䊔䊦䈪䈲䇮ਔ⠪䈱㔚⇇ಽᏓ䈮 ᄢ䈐䈭Ꮕ⇣䈲⷗䉌䉏䈭䈇䈏䇮䊋䉟䊘䊷䊤䈏䉥䊮䈜䉎 㜞䉝䊋䊤䊮䉲䉢㔚ᵹ⁁ᘒ䈪䈲䇮Device#2䈱㔚⇇ಽ Ꮣ䈲1ጀ⋡䉣䊏䋨䊋䉾䊐䉜ጀ䋩䈮䉁䈪᜛ᒛ䈚䇮䉋䉍㜞㔚

࿑ 3.2.6-2. Illustration of relationship between avalanche characteristics and SEB of Device#1 (single epitaxial layer). Under heavy ion irradiation, SEB can occur if drain voltage exceeds 505V.

࿑ 3.2.6-3. Quasi-stationary avalanche curves from simulations of Device#1 (single epitaxial layer) and Device#2 (dual

epitaxial layers). A comparison of the two devices shows an improvement of 72volts in secondary breakdown voltage along with a significant improvement in the bipolar turn-on voltage.

࿑ 3.2.6-4. SEB test results of Device #2 using Kr and Xe. All devices failed for SEB between 570V and 590V as simulation indicated.

࿶䉕ᡰᜬ䈚䈩䈇䉎䇯

SEB⹜㛎䈮䈍䈇䈩䉅䇮䉟䉥䊮⒳䇮䉣䊈䊦䉩䊷䈮࿃䉌䈝䇮570䌾590V䈪⎕უ䈚䈢䇯䉲䊚䊠䊧䊷䉲䊢䊮 䈪␜䈚䈢䉋䈉䈮䇮䊂䊋䉟䉴2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䉕ะ਄䈜䉎䈖䈫䈪䇮SEB⠴㊂䈏ะ਄䈚䈢

(࿑ 3.2.6-4)䇯

䉸䊷䉴ᛶ᛫Ⴧട䈮䉋䉎 2 ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈱ะ

਄

䉸䊷䉴䊄䊷䉵㊂䉕33%ᷫዋ䈜䉎䈖䈫䈪䋨Device#3䋩䇮 䉸䊷䉴ᛶ᛫䉕Ⴧട䈚䈢䇯䈖䈱䈫䈐䈱䉝䊋䊤䊮䉲䉢․ᕈ 䉕࿑ 3.2.6-5䈮␜䈜䇯䈖䈱䉋䈉䈮䇮2ᰴ䊑䊧䉟䉪䉻䉡䊮 㔚࿶䈏578V䈎䉌728V䈮ะ਄䈚䈢䇯䈖䉏䈲䇮䉸䊷䉴 䊄䊷䉵㊂䉕ૐᷫ䈜䉎䈖䈫䈪䇮䉣䊚䉾䉺ᵈ౉ല₸䉕ૐਅ 䈘䈞䇮ነ↢䊋䉟䊘䊷䊤䈱㔚ᵹ೑ᓧ䉕ᛥ䈋䈩䈇䉎䈢䉄 䈪䈅䉎䇯䈖䈱ᄌᦝ䈮䉋䉍䉸䊷䉴䉮䊮䉺䉪䊃ᛶ᛫䈏਄᣹

䈜䉎䈏䇮1%એਅ䈮෼䉁䈦䈩䈍䉍䇮໧㗴䈭䈇䇯䉁䈢㑣 ୯㔚࿶䈱਄᣹䈲㗼⪺䈪䈅䉍䇮Ꮏ⒟䈱ᓸ⺞ᢛ䈏ᔅⷐ 䈪䈅䉎䈏⺞ᢛน⢻䈭▸࿐䈪䈅䉎䇯࿑ 3.2.6-6䈮 SEB⹜㛎⚿ᨐ䉕␜䈜䇯SEB⹜㛎䈱⚿ᨐ䈪䈲䇮 Device#3䋨ૐ䉸䊷䉴䊄䊷䉵㊂䋩䈲ቯᩰ䊄䊧䉟䊮㔚࿶

600V䉁䈪⎕უ䈚䈭䈎䈦䈢䇯䈢䈣䈚䇮䉲䊚䊠䊧䊷䉲䊢䊮 䈪䈱੍ᗐ㔚࿶678V䉁䈪䈲䉅䈢䈝䇮620䌾630V䈪

⎕უ䈚䈢䇯䈖䉏䈲ታ㛎䈮૶↪䈚䈢䊂䊋䉟䉴䈱⚳┵ㇱ

⠴࿶䈏640V⒟ᐲ䈪䈅䉎䈢䉄䈫ផቯ䇯䉟䉥䊮䊎䊷䊛 ᾖ኿䈪䈱┵ㇱ⠴࿶ૐᷫ䈮䈧䈇䈩䈲䈘䉌䈮⺞ᩏ䈏ᔅ ⷐ䈪䈅䉎䇯

(4) 250V MOSFET䈱SEB․ᕈ

250V⚖MOSFET䈱ᦨㆡ⸳⸘䋨2ጀ䉣䊏䋩䉕ⴕ䈇䇮䉲䊚䊠䊧䊷䉲䊢䊮䈮䈩䉝䊋䊤䊮䉲䉢䊑䊧䉟䉪䉻䉡

䊮㔚࿶䈏267V䇮䊋䉟䊘䊷䊤䉺䊷䊮䉥䊮㔚࿶䈏501V䇮䈠䈚䈩2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈏384V䉕ᓧ䈢䇯 2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈏1ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䉋䉍ᄢ䈐䈇䈱䈪䇮SEB䈪⎕უ䈜䉎೨䈮1ᰴ䉝䊋䊤 䊮䉲䉢䊑䊧䉟䉪䉻䉡䊮䈪⎕უ䈜䉎䇯䉸䊷䉴㔚ሶ㔚ᵹ䈏1.64×10^-4A䈮㆐䈜䉎䉁䈪䈲䇮ነ↢䊋䉟䊘䊷䊤േ

૞䈲ᛥ೙䈘䉏䉎䇯SEB⹜㛎䈮䈍䈇䈩ㅢᏱ䈱1ᰴ䉝䊋䊤䊮䉲䉢䊑䊧䉟䉪䉻䉡䊮䉁䈢䈲䉭䊷䊃䊋䉟䉝䉴䈱 㜞䈇SEGR䈪⎕უ䈫䈭䉍䇮SEB⎕უ䈲᷹ⷰ䈘䉏䈭䈎䈦䈢䇯

࿑ 3.2.6-5. Quasi-stationary avalanche curves of three different MOSFETs with buffer layers. Each device uses a

different source dose (Device#2 is the baseline device, Device#3 has a 33%

less dose, and Device#4 has a 67increase in dose).

࿑ 3.2.6-6. SEB test results of Device#3, which uses a lower source dose, at different Xenon energies. Devices passed 600V as simulation suggested. Indicated failures reflect termination breakdown.

(5) ⚿⺰

ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮䈪䈱⸃ᨆ䉕ⴕ䈇䇮એਅ䉕⏕⹺䈚䈢䇯(1)SEB䈲ነ↢䊋䉟 䊘䊷䊤䊃䊤䊮䉳䉴䉺䈱䉺䊷䊮䉥䊮䈮࿃䉎䇯(2)SEB䈲䉝䊋䊤䊮䉲䉢․ᕈ䈪᳿䉁䉍䇮SEB⎕უ䈱㑣୯㔚࿶

䈲2ᰴ䊑䊧䉟䉪䉻䉡䊮㔚࿶䈮䉋䉍᳿䉁䉎䇯(3)䉁䈢䇮SEB䈲䉟䉥䊮ᾖ኿䈣䈔䈪䈭䈒䇮ᾖ኿䉟䉥䊮䈪⊒↢

䈜䉎㔚ሶᱜሹኻ䈫㜞㔚⇇㗔ၞ䈱⚵䉂ว䉒䈞䈏䊃䊥䉧䊷䈫䈭䉎䇯䈘䉌䈮䇮䉣䊏䈱ጀ᭴ᚑ䈫䉸䊷䉴䊄䊷䉵

㊂䉕ᄌᦝ䈚䈢䉲䊚䊠䊧䊷䉲䊢䊮䈲ታ㓙䈱⹜㛎⚿ᨐ䈫⦟䈇৻⥌䉕␜䈚䈢䇯

ᡆૃቯᏱ䉝䊋䊤䊮䉲䉢䉲䊚䊠䊧䊷䉲䊢䊮䈲SEB੍᷹䈮᦭ല䈪䈅䉍䇮዁᧪䇮චಽ䈭᡼኿✢⠴㊂䉕ᜬ 䈧䊌䊪䊷MOSFET䉕㐿⊒䈜䉎਄䈪᦭⋉䈭䉿䊷䊦䈫䈭䉎䇯

3.2.7㩷 ᐢ▸䈭䉣䊈䊦䉩䊷㗔ၞ䈱ਛᕈሶ䉕↪䈇䈢䉲䊮䉫䊦䉟䊔䊮䊃⹜㛎䈫ᮡḰ⹜㛎䈫䈱㑐ㅪ