3.2 ᬌ⸛ᢥ₂
3.2.7 㩷 ᐢ▸䈭䉣䊈䊦䉩䊷㗔ၞ䈱ਛᕈሶ䉕↪䈇䈢䉲䊮䉫䊦䉟䊔䊮䊃⹜㛎䈫ᮡḰ⹜㛎䈫䈱㑐ㅪ
3.2.7㩷 ᐢ▸䈭䉣䊈䊦䉩䊷㗔ၞ䈱ਛᕈሶ䉕↪䈇䈢䉲䊮䉫䊦䉟䊔䊮䊃⹜㛎䈫ᮡḰ⹜㛎䈫䈱㑐ㅪ
䈎䉌㜞ᐲ60000䊐䉞䊷䊃䈱䊧䊔䊦䈮䈍䈔䉎ᦨ㊀ⷐੑᰴ☸ሶ䈪䈅䉍䇮ᢙ⊖GeV䈮䈹ㅪ⛯⊛䈭䉣䊈䊦 䉩䊷䉴䊕䉪䊃䊦䉕ᜬ䈧䇯䉁䈢䇮ቝቮ⦁䉇䉲䊞䊃䊦䉇ISSౝ䇮䈠䈚䈩㜞䉣䊈䊦䉩䊷☸ሶടㅦེㄝ䈮䈍 䈇䈩䉅㜞䉣䊈䊦䉩䊷ਛᕈሶ䈱ᓇ㗀䉕⠨ᘦ䈚䈭䈔䉏䈳䈭䉌䈭䈇䇯䉁䈢䇮䈜䈼䈩䈱ⅣႺ䈪ਛᕈሶ䉴䊕䉪 䊃䊦䈱ᾲൻ䈏䈍䈖䉍䇮ᾲਛᕈሶ䈲䊖䉡
⚛䉕䈚䈢䊂䊋䉟䉴䈱ጀ㑆⛘✼⤑
䋨BPSG䋩ਛ䈱10B䈱₪ᔕ䈮䉋䉍䉟 䉥䊮䉕↢ᚑ䈜䉎䈖䈫䉅㗴䈫䈭䉎䇯䈜䈼 䈩䈱ⅣႺ䈮ㆡ䈚䈢ᮡḰ⹜㛎ᴺ䉕䉍
䈕䉎䈢䉄䈮䇮ᾲ䉣䊈䊦䉩䊷䈎䉌㜞䉣䊈 䊦䉩䊷䈮䈹ᐢ▸䈭䉣䊈䊦䉩䊷▸࿐
䈱SEEᢿ㕙Ⓧᦛ✢䉕ᓧ䉎ᔅⷐ䈏䈅䉍䇮 ⶄᢙ䈱ᾖᣉ⸳䈮䈍䈇䈩ⶄᢙ䈱 SRAM䊂䊋䉟䉴䈮㑐䈜䉎SEE⹜㛎䉕 ታᣉ䈚䈩⋧Ყセ䈜䉎䇯
(3) ᾖ䊂䊋䉟䉴䈫SEE⹜㛎ᣇᴺ ᾖኻ⽎ߩSRAMࠍ 3.2.7-1ߦ
߹ߣߚޕSEE⹜㛎䈲ਅ⸥᧦ઙ䈪ታ ᣉ䈚䈢䇯㩷
䊶Test Pattern: Checkerboard Pattern 55(hex)㩷
䊶㔚ᵹ䊝䊆䉺䊷䋺SEL⹏ଔ㩷 䊶䊥䉦䊋䊥䊷ᤨ㑆䋺20⑽㩷 䊶ቶ᷷㩷
䊶ု⋥㩷
䉁 䈢 䇮 ᾖ ⹜ 㛎 䊗 䊷 䊄 䋱 ᨎ ᒰ 䈢 䉍 SRAM䉕3䉼䉾䊒タ䈚䇮LANSCE 䈪䈲䊗䊷䊄3ᨎหᤨᾖ䇮TRIUMF 䈍䉋䈶 IUCF/LENS 䈪䈲䊗䊷䊄䋱ᨎ 䈱䉂ᾖ䈚䈢䇯IUCF/LENS 䈱ਛᕈ ሶ䉴䊕䉪䊃䊦䈲䇮࿑ 3.2.7-1ߦ␜ߒߚ
ࠃ߁ߦޔᾲࠛࡀ࡞ࠡߣ3MeVߦࡇࠢࠍ߽ߟޕ䈖䉏䉌3ᣉ⸳䈪䈲䇮ࡏ࠼ࠍCd᧚ߢⷒߞߚ ႐วߣⷒࠊߥ߆ߞߚ႐วߢߩᢿ㕙ⓍࠍᲧセߒߡޔᾲਛᕈሶᚑಽߩ⹏ଔࠍⴕߞߚޕ
(4) ⹜㛎⚿ᨐߣ⠨ኤ
࿑ 3.2.7-1 IUCF/LENS䈱ਛᕈሶ䉴䊕䉪䊃䊦
࿑ 3.2.7-2 Hitachi-BߩSEL⹏ଔ⚿ᨐ
࿑ 3.2.7-3 Samsung䈱SEU⹏ଔ⚿ᨐ
(a) SELߩ⚿ᨐ
േ㔚5V♽ߢߪHitachi-Bߩߺޔ3. 3V♽ߪߔߴߡߩSRAMߢSEL߇⊒↢ߒߚޕ࿑
3.2.7-2ߦHitachi-BߩSELᢿ㕙Ⓧߩਛᕈሶ߮㓁ሶࠛࡀ࡞ࠡଐሽᕈࠍ␜ߒߚޕSELᢿ㕙
ⓍߪWNRߩ߶߁߇TRIUMFࠃࠅ߽ᄢ߈ߊޔ㜞ࠛࡀ࡞ࠡCut-Offߩᓇ㗀߇ࠄࠇࠆޕ
(b) SEUߩ⚿ᨐ
࿑ 3.2.7-3 ߦ Samsung SRAMߩSEUᢿ㕙Ⓧߩਛᕈሶ
߮㓁ሶࠛࡀ࡞ࠡଐሽᕈࠍ␜ߒߚޕ
10MeV એߩ⊕⦡ਛᕈሶࡈ࡞ࠛ
ࡦࠬߢ⸘▚ߔࠆߣ㓁ሶ SEU ᢿ㕙
Ⓧ㘻୯㧔Plateau㧕ߦࠃߊ৻⥌ߔ ࠆޕ߹ߚޔ3-5MeVਛᕈሶSEU
ᢿ㕙ⓍߪPlateauࠃࠅࡈࠔࠢ࠲
5.3 ߛߌૐޕ߹ߚޔ࿑ 3.2.7-4 ߦฦSRAMߦ㑐ߒߡᾲਛᕈሶᢿ 㕙Ⓧࠍޔ࿑ 3.2.7-5ߦ3-5MeV
߮ᾲਛᕈሶߦኻߔࠆ⊕⦡ਛᕈሶ ߩᢿ㕙ⓍᲧࠍ␜ߒߚޕᾲਛᕈሶߩ ᢿ㕙Ⓧߪ࠺ࡃࠗࠬଐሽᕈ߇ᄢ߈ ߊޔ႐วߦࠃߞߡߪ⊕⦡ਛᕈሶࠃ ࠅ߽ᄢ߈ޕߎࠇࠍ⠨ᘦߔࠆߣޔ
⥶ⓨᯏౝߩࡈ࠶ࠢࠬߩ⸘▚⚿
ᨐ㧔 3.2.7-2䋺⚂ 47%߇ᾲਛᕈ ሶ㧕߆ࠄޔᾲਛᕈሶߦᗵᐲߩ㜞
࠺ࡃࠗࠬߢߪ⊕⦡ਛᕈሶ⹜㛎ߩ ߺታᣉߩ႐วޔSEU ₸ࠍㆊዊ⹏
ଔߔࠆߎߣߦߥࠆޕ
(5) ⚿⺰
(a) ㄭᐕ䈱䊂䊋䉟䉴䈲SELᗵᐲ䈏㜞䈒䇮䉣䊈䊦䉩䊷ଐሽᕈ䈏䈅䉎䇯⊕⦡⹜㛎䈱䉂䈪䈲SEL₸䉕ㆊ ዊ⹏ଔ䈜䉎䈖䈫䈮䈭䉎䇯
(b) SEUᢿ㕙Ⓧ䈲ฦᣉ⸳㑆䈪⍦⋫䈱䈭䈇⚿ᨐ䈏ᓧ䉌䉏䈢䇯
(c) 3-5MeVਛᕈሶ䈱SEUᢿ㕙Ⓧ䈲⊕⦡ਛᕈሶ䈱1/5-1/600䇯
࿑ 3.2.7-4 ᾲਛᕈሶ䈱SEUᢿ㕙Ⓧ
࿑ 3.2.7-5 3-5MeV 䈶ᾲਛᕈሶ䈮ኻ䈜䉎⊕⦡ਛᕈሶ䈱 ᢿ㕙ⓍᲧ
3.2.7-2 Boeing747 ဳ⥶ⓨᯏౝ䈱ਛᕈሶ䊐䊤䉾䉪䉴⸘
▚୯
(d) ㄭᐕ䈱䊂䊋䉟䉴䈲ᾲਛᕈሶ䈮ኻ䈜䉎ᗵᐲ䈏㜞䈒䈭䈦䈩䈍䉍䇮ᾲਛᕈሶ䈱ᓇ㗀䉕ήⷞ䈜䉎䈫䇮⥶
ⓨᯏౝ䈱䉋䈉䈭ᾲਛᕈሶᚑಽ䈱㜞䈇ⅣႺ䈮ኻ䈚䈩䈲䉣䊤䊷₸䉕1ᩴ⒟ᐲㆊዊ⹏ଔ䈜䉎䈖䈫䈮䈭 䉎䇯
(6) ᢥ₂䈮ኻ䈜䉎⠨ኤ
ᧄᢥ₂䈲ⅣႺਛᕈሶ䈱䊂䊋䉟䉴䈮ኻ䈜䉎SEEടㅦེ⹜㛎ᣇᴺ䈮㑐䈜䉎䉅䈱䈪䈅䉍䇮․䈮ᾲਛᕈ ሶ䈱ᓇ㗀䉕⼏⺰䈚䈢䉅䈱䈪䈅䉎䇯ᧄᢥ₂䈪ข䉍ᛒ䈦䈢SRAM䈱ᱴ䈬䈲1998-99ᐕ䈪䈅䉍䇮⺰ᢥ⊒
ᤨὐ䋨2006 ᐕ䋩䈪䈲ᣢ䈮ᦨᣂ䊂䊋䉟䉴䈫䈲⸒䈇㔍䈇䇯ᐨ⺰䈮䉅ㅀ䈼䉌䉏䈩䈇䉎䊖䉡⚛䉕䈚䈢 ጀ㑆⛘✼⤑䋨BPSG䋩䈲䇮䊂䊋䉟䉴ㅧ䊒䊨䉶䉴䈮䈍䈇䈩䇮㈩✢ᒻᚑ䈮䉋䉎ಳಲ䈱ᐔမൻ䈮⋉䈪 䈅䈦䈢䈏䇮ᐔမൻᛛⴚ䈲ᣢ䈮CMP䋨Chemical Mechanical Polishing䋩䈮ข䈦䈩ᦧ䉒䉌䉏䈩䈇䉎䇯 ᓥ䈦䈩䇮BPSG䉕↪䈇䈩䈇䈭䈇䊂䊋䉟䉴䈪䈲ᾲਛᕈሶ䈱SEE䈮ኻ䈜䉎ᓇ㗀䈲䈾䈫䉖䈬⠨ᘦ䈚䈭䈒䈩 䉅䉋䈇䇯㜞䉣䊈䊦䉩䊷ਛᕈሶ⹜㛎⚿ᨐ䈏ᦨᣂ䊂䊋䉟䉴䈮Ყ䈼䈩⦟䈇ฎ䈇䊂䊋䉟䉴䉕䉲䉴䊁䊛䈮⚵䉂 ㄟ䉃㓙䈮䈲䇮ᧄᢥ₂䈮⸥ㅀ䈘䉏䈩䈇䉎䉋䈉䈮䇮䈠䈱᭴ᚑ᧚ᢱ䉕⺞ᩏ䈜䉎䈭䈬䈱ᵈᗧ䈏ᔅⷐ䈪䈅䉎䇯
3.2.8 65nm CMOS ⠴✢RAM 䈱㱍✢䈮䉋䉎ᄙ㊀䉶䊦䉝䉾䊒䉶䉾䊃䈱⎇ⓥ
ᢥ₂ฬ Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology
㩷 ౖ IEEE Transaction on Nuclear Science, Vol. 53 No. 6, pp.3479-3486, Dec. 2006.
⪺⠪ฬ G. Gasiot, D. Giot, and P. Roche
ኻ⽎䊂䊋䉟䉴 65, 90, 130 nm 䊦䊷䊦䈪ㅧ䈘䉏䈢SRAM ታ㛎⸳ ᐔ㕙⁁ 100㱘 䉨 䊠䊥䊷䈱241Am㱍 ✢䉸䊷䉴 ᾖ✢⒳䈶
䉣䊈䊦䉩䊷䈱ಽ
241Am 䈎䉌䈱5 MeV 䉝䊦䊐䉜☸ሶ න⊒⽎䈲
Ⓧ▚✢㊂ലᨐ䈱ಽ
න⊒⽎䊶ᄙ㊀䉶䊦䉝䉾䊒䉶䉾䊃
ታ㛎䈲ℂ⺰䈱ಽ ታ㛎
(1) ⷐ㩷
65nm䊦䊷䊦䈪䉌䉏䈢SRAM䈱㱍✢䈮䉋䉎SER (Soft Error Rate)䉕90, 130nm䊦䊷䊦䈪
䉌䉏䈢ห䈛᭴ㅧ䈱SRAM䈫Ყセ䈚䈢䇯SER䈱ା㗬ᕈ䈅䉎⹏ଔᣇᴺ䉕ឭ␜䈚䈢䇯 䉲䊚䊠䊧䊷䉲䊢䊮 䉇᭴ㅧ䈱ᬌ⸛䈮䉋䉍᷹ቯ䈘䉏䈢䊂䊷䉺䉕⸃㉼䈚䈢䇯
(2) ታ㛎㩷 (a) ታ㛎ᣇᴺ
⹜㛎䈮䈲130nm䊶90nm䈱↪䊒䊨䉶䉴䈫65nm䈱㐿⊒䊒䊨䉶䉴䈪䉌䉏䈢SRAM䉕↪䈇䈢䇯
䊜䊝䊥䉶䊦䈲࿑ 3.2.8-1䈮␜䈜䉋䈉䈮6䊃䊤䊮䉳䉴䉺䈪᭴ᚑ䈘䉏䉎䇯CAPA1/2䈲SERᡷༀ䈱䈢䉄 䈮䉭䊷䊃VSS㑆䈮䉏䉎MIMኈ㊂䈪䈅䉍䇮36/14/8 fF䈪䈅䉎䇯࿁䈱⹏ଔ䈪䈲䈖䈱ኈ㊂䉕䉃䊂 䉱䉟䊮䋨ኻ╷ຠ䋩䈫䉁䈭䈇䊂䉱䉟䊮䋨ᮡḰຠ䋩䉕Ყセ䈜䉎䇯ᾖ䈲100㱘䉨䊠䊥䊷䈱241Am㱍✢䉸䊷 䉴䉕↪䈇䉎䇯
(b) SEU᷹ቯ⚿ᨐ
ᮡḰຠ䈱SER䈱Ყ䈲130, 90, 65nm䊦䊷䊦䈱䉅䈱䈪100 : 63 : 130䈪䈅䉎䇯90nmຠ䈏130nm
ຠ䉋䉍SER⠴ᕈ䈏㜞䈇䈖䈫䈲䇮䈖䉏䉁䈪䉅ႎ๔䈏䈅䉎䇯65nm䈱SER䈲90nmຠ䉋䉍Ⴧട䈚䈩䈇䉎䇯
ᰴ䈮ኻ╷ຠ䈱SER䉕᷹䉍䇮ᮡḰຠ䈫䈱ᡷༀᐲ䉕䈮␜䈜䇯130nmຠ䈲ኈ㊂ㅊട䈪SEU䈲⊒↢䈚
ㅧ䊦䊷䊦 (nm)
㔚Ḯ㔚
(V)
䉶䊦㕙Ⓧ
(㱘m2)
SER (⋧ኻ୯)
CAPA1/2 (fF/cell)
ኻ╷೨ᓟ䈱 SER ᡷༀ(Ყ)
130㩷(᳢↪) 1.2 2.5 ≡100 36 㺙
90㩷 (ૐ㔚ജ) 1.2 1.15 63 14 15,000
65㩷 (ૐ㔚ജ) 1.2 0.525 130 8 2,000
䈭䈒䈭䉎䋨㺙䋩䇯䈠䉏䈮ኻ䈚䇮90nm, 65nmຠ䈱ᡷ ༀ䈲15,000䇮2,000 䈪䈅䉎䇯䈖䈱ᡷༀഀว䈲 䊜䊝䊥䉶䊦䈱㕙Ⓧ䈪 MIM ኈ㊂䈏䉁䉎䈖䈫䈮ኻᔕ 䈜䉎䇯
㩷
(3) 90nm䊂䊋䉟䉴65nm䊂䊋䉟䉴䈱SER䈱Ყセ㩷 ታ↪䈮䈍䈇䈩䈲䇮ECC(⺋䉍⸓ᱜ╓ภ)䈪䉣䊤䊷
࿁ᓳ䈏䈪䈐䉎䉲䊮䉫䊦䊎䉾䊃䈱䉝䉾䊒䉶䉾䊃䉋䉍䇮ᄙ
㊀䉶䊦䉝䉾䊒䉶䉾䊃(MCU)䈱䈾䈉䈏㊀ⷐ䈪䈅䉎䇯
࿁䈱䉝䉾䊒䉶䉾䊃᷹ቯ䈱䉕࿑ 3.2.8-2䈮␜䈜䇯 䈖䈱䉋䈉䈮䈢䈒䈘䉖䈱䉶䊦䈏ォ䈚䈢ᓟ䈮MCU䉕ᱜ
ᒰ䈮⹏ଔ䈜䉎䈢䉄䈮䈲䇮1䉣䊔䊮䊃䈪ⶄᢙ䈱䉶䊦䈏ォ䈜䉎䇸⌀䈱MCU䇹䈫䇮⁛┙䈮⊒↢䈚䈢SEU 䈏ὼ㊀䈭䉎䇸ன䈱MCU䇹䉕್ቯ䈜䉎ᔅⷐ䈏
䈅 䉎 䇯 䈮 ್ ቯ 䈏 䈪 䈐 䈭 䈒 䈫 䉅 ⛔ ⸘ ⊛ 䈮 MCU䊧䊷䊃䉕ផቯ䈜䉎ᔅⷐ䈏䈅䉎䇯
(a) MCU⹏ଔᴺ䈱ឭ᩺
䉝䉾䊒䉶䉾䊃䈚䈢ⶄᢙ䈱䉶䊦䈱㑆㓒䉕↪䈇 䈩䈅䉎㑆㓒(k)એౝ䈮䈭䉝䉾䊒䉶䉾䊃䈏⊒↢
䈚䈢႐ว䉕 MCU 䈫ቯ⟵䈜䉎䇯⹏ଔ䈚䈢䈇䈱 䈲න⁛㱍✢䈮䉋䉎MCU 䈱⊒↢䊧䊷䊃䈪䈅䉎䇯 න⁛SEU䈱䉍䈮䈱SEU䈏ὼ⊒↢䈜 䉎⏕₸䈲䇸䉫䊦䊷䊒䈱䊎䉾䊃ᢙ(Adjcell)/䊜䊝 䊥䊷ో䈱䊎䉾䊃ᢙ䇹䈮Ყ䈜䉎䇯䈖䈉䈚䈩⊒
↢䈜䉎䈱䈏ன䈱MCU䈪䈅䉎䇯᷹ቯ䈘䉏䈢䉝䉾䊒䉶䉾䊃ᢙ(ESRP)䈏ዊ䈘䈇႐ว䈲䇮னMCU䈱⊒↢
⏕₸䈲䇮ESRP䋪AdjCell/Nbit䈪䈅䉎䈏䇮ᄙᢙ䈱䉝䉾䊒䉶䉾䊃䈏䈅䉎႐ว䈲㊀ⶄ䈱⏕₸䉕ᱜ䈜䉎 䈢䉄䇮ᰴ䈱ᑼ䈱䉋䈉䈮ᜰᢙ㑐ᢙ䉕↪䈇䈢ᑼ䈮䈭䉎䇯
ன MCU 䈱 ⊒ ↢ ⏕ ₸ 䋽1-exp (-ESRP䋪 AdjCell/Nbit)
㩷 㩿Adjcell䈲k䈱᧦ઙ䉕䉂䈢䈜䉶䊦ᢙ䈪䇮k=1,3,5 䈮ኻ䈚8 (䈧䉁䉍32-1), 48 (72-1), 120 (112-1)䈫䈭䉎)䇯
3.2.8-1䈲65nm SRAM䈮㑐䈚䈩䇮⇣䈭䉎Vdd䈪 䊂䊷䉺䉕ข䉍䇮MCU 䉕⸘▚䈚䈢䉅䈱䈪䈅䉎䇯⇣䈭䉎 k 䉕↪䈇䈩䉅⸥䈱ᱜᓟ䈲ห৻䈱 MCU 䊧䊷䊃䉕ᓧ
3.2.8-1 MCU Vdd
Rate k
Nominal -20%
Raw 1 9.4 % 8.8 %
Corrected 1 4.0 % 3.7 % Raw 3 32.0 % 31.1 % Corrected 3 3.9 % 3.8 %
࿑ 3.2.8-1
࿑ 3.2.8-2
䉎䈖䈫䈏䇮䈖䈱ᚻᴺ䈱ᱜᒰᕈ䉕␜䈜䇯䈖䈱ᱜ䉕⠨ᘦ䈞䈝䈮MCU䊧䊷䊃䉕ផቯ䈜䉎䈫䇮MCU䊧䊷 䊃䉕ㆊᄢ⹏ଔ䈜䉎䈖䈫䈮䈭䉎䇯ਛᕈሶ䈱႐ว㔚⩄⊒↢䈱䊜䉦䊆䉵䊛䈏⇣䈭䉎䈱䈪䇮65nmຠ䈱MCU 䊧䊷䊃䈲䈘䉌䈮㜞䈇䈫ផ᷹䈘䉏䉎䇯㩷
㩷
(b) 3ᰴర䊂䊋䉟䉴䉲䊚䊠䊧䊷䉲䊢䊮
ඨዉ䊂䊋䉟䉴䈫࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䉕หᤨ䈮ⴕ䈉㵰Device㵱䉕㐿⊒䈚䇮SEU 㑣୯䉕ផቯ䈚䈢䇯
Device 䈲ዋᢙ䉨䊞䊥䉝ኼ䈱䉨䊞䊥䉝Ớᐲଐሽᕈ䇮䉥䊷䉳䉢䊷䊥䉮䊮䊎䊈䊷䉲䊢䊮䇮䊄䊷䊏䊮䉫䊶㔚
႐䊶䉨䊞䊥䉝䈬䈉䈚䈱ᢔੂ䉕⠨ᘦ䈚䈢ᤃേᐲ䊝䊂䊦䈭䈬䈱‛ℂ䊝䊂䊦䉕䉃䇯ਇ⚐‛ಽᏓ䈲 SIMS 䊝䊂䊦䈪䊝䊂䊦ൻ䈚䈢䇯65nm 䊂䉱䉟䊮䈪䈲⍴䉼䊞䊈䊦ലᨐ䈮䉋䉎䊥䊷䉪㔚ᵹ䈱Ⴧട䈱ലᨐ䉕 3D 䉲䊚䊠䊧䊷䉲䊢䊮䈮䉏䉎䈖䈫䈲㔍䈚䈇䇯䈖䈱䉲䊚䊠䊧䊷䉲䊢䊮䈮ᱜ⏕䈭䊃䊤䊮䉳䉴䉺䈱ᒻ⁁䊶㈩⟎䉕↪
䈇䈩⸘▚䉕ⴕ䈉䇯䈘䉌䈮࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䉕SPICE䈪ⴕ䈉䇯࿑ 3.2.8-3Ꮐ䈮䉲䊚䊠䊧䊷䉲䊢䊮䈜䉎 䊜䊝䊥䉶䊦䈱䊃䊤䊮䉳䉴䉺㈩⟎䇮࿑ 3.2.8-3ਛᄩ䈮 P-䉡䉣䊦/N-䉡䉣䊦䈱᭴ㅧ䇮࿑ 3.2.8-3ฝ䈮㱍✢
䈮䉋䉎䉨䊞䊥䉝⊒↢䈱䉲䊚䊠䊧䊷䉲䊢䊮䈱᭽ሶ䉕␜䈜䇯
ࠪࡒࡘ࡚ࠪࡦ⚿ᨐ 1㧦NMOS࠻ࡦࠫࠬ࠲ߣPMOS࠻ࡦࠫࠬ࠲ߩᲧセ
65nmຠ䈱䈾䈉䈏90nmຠ䉋䉍SER䈏㜞䈇ේ࿃䈱䈵䈫䈧䈫䈚䈩PMOS䊃䊤䊮䉳䉴䉺䈏ᓇ㗀䉕ฃ 䈔䉇䈜䈇䈫䈇䈉น⢻ᕈ䈏䈅䉎䇯䈠䈖䈪SEU䉕䈖䈜LET䈱㑣୯䉕⺞䈼䈢䇯⚿ᨐ䈲
NMOS-off drain㧦 5.5<SEUTH<6 fC/ȝm, PMOS-off drain㧦 21<SEUTH<22 fC/ȝm 䈫੍ᗐㅢ䉍䈪䈅䉎䇯䈖䈱䈖䈫䈎䉌䉅䇮SEU䈱ਥ䈭ේ࿃䈲NMOS䊃䊤䊮䉳䉴䉺䈱Drain 䈮㱍✢䈏䈅䈢 䉎䈖䈫䈣䈫⠨䈋䉌䉏䉎䇯
ࠪࡒࡘ࡚ࠪࡦ⚿ᨐ 2㧦SER߳ߩLET㑣୯ߩᓇ㗀
SER߇ᗵ㗔ၞߩ㕙ⓍߦᲧߔࠆߥࠄ߫ޔSER(130 nm)>SER(90 nm)>SER(65 nm) ߣ ߥࠆߪߕߛ߇ޔߘ߁ߥߞߡߥޕ࠼ࠗࡦઃㄭࠍㅢࠆ☸ሶߣㅢࠄߥ☸ሶ߇MOS࠻ࡦ
ࠫࠬ࠲ߦਈ߃ࠆᓇ㗀ߪ߹ߞߚߊ⇣ߥࠆޕ࠼ࠗࡦઃㄭߪ㔚႐߇ᒝߊ㔚⩄ߪ࠼ࡈ࠻ߒߡ࠼
ࠗࡦߦ㓸߹ࠆޕ࠼ࠗࡦ߆ࠄ㔌ࠇࠆߣ㔚႐߇ᒙߊ㔚⩄ߪᢔߢ⒖േߔࠆޕ241Am߆ࠄߩ
࿑ 3.2.8-3
5.4MeVߩǩ✢ߪࠪࠦࡦ ਛߢ30Ǵmߒ߆ࠄߥޕ
৻⥸⊛ߦߪ⩄㔚☸ሶ߇ࠪ
ࠦࡦਛࠍ᳓ᐔߦࠆߣ߈ߦ SEUࠍߎߒ߿ߔ߇ޔ
࿁ߩᾖᣇᴺ㧔࿑ 3.2.8-4 Ꮐ㧕
ߢߪޔࠕ࡞ࡈࠔ☸ሶߪࠪࠦࡦਛࠍ߆ࠄਅߦࠆ႐ว߇ᄙޕ࿑ 3.2.8-4ฝߪޔ࠻ࡦ
ࠫࠬ࠲ᢿ㕙ߩᮨᑼ࿑ߢࠆޕSTI ߣߪShallow Trench Insulation ߩᗧߢޔߎߎߦࠪࠦ
ࡦߪߥޕ࠼ࠗࡦࠍ⋥᠄ߔࠆ႐ ว㧔Impact 1㧕ߣ0.10Ǵmߛߌߕ ࠇߚ႐ว㧔Impact 2㧕ߩ႐วࠍࠪ
ࡒࡘ࡚ࠪࡦߢᲧセߔࠆߣޔ Impact 2ߩ႐ว㔚⩄ߪ㆙ࡄࠬ
ࠍㅢߞߡ࠼ࠗࡦ
㗔ၞߦዯߊޕߘߩ⚿ᨐޔLET㑣 ୯ߪImpact 1ࠃࠅ㜞ߊߥࠆޕ
䈘䉌䈮㱍✢䈫ਛᕈሶ䈻䈱ᔕ╵䉕⸘▚䈪䈐䉎䈭䉲䊚䊠䊧䊷䉲䊢䊮䉕↪䈇䉎䇯䊄䊧䉟䊮䉕☸ሶ䈏ㅢㆊ 䈜䉎䈫䈐䈲䊄䊥䊐䊃䇮䈠䉏એᄖ䈱㗔ၞ䉕ㅢㆊ䈜䉎䈫䈐䈲ᢔ䈱䊝䊂䊦䉕↪䈇䈩࿁〝䈻䈱ᓇ㗀䉕⸘▚
䈜䉎䇯 3.2.8-2䈱SEU䈱LET㑣୯䈲NMOS䈱䊄䊧䉟䊮䈮⋥ធ 㱍✢䈏ᒰ䈢䉎႐ว䈱⸘▚⚿ᨐ 䈪䈅䉎䇯130nm䈎䉌90nm䈪ᡷༀ䈚䈢LET㑣୯䈏65nm䊂䉱䉟䊮䈪䈲ᖡൻ䈚䈩䈇䉎䇯3⋡䊶4
⋡䈲䇮ฦLET㑣୯䈮ኻ䈚䈩䇮241Am䈱㱍✢䈫ᄢ᳇ਛᕈሶ䋨ᢙMeV㗔ၞ䋩䈮䉋䉎SER䈱⸘▚⚿
ᨐ䈪䈅䉎䇯㱍✢䈱႐ว䈲SER 䈏NMOS䈱LET㑣୯䈮ଐሽ䈜䉎䈖䈫䈏䉒䈎䉎䇯
ࠪࡒࡘ࡚ࠪࡦ⚿ᨐ3㧦65nmຠߩLETth߇ૐේ࿃
3.2.8-3䈪␜䈜䉋䈉䈮䇮䈖䈖䈪↪䈇䈢 65nm 䊦䊷䊦䈱 ඨዉ䊒䊨䉶䉴䈪䈲p-well/n-well 䈱䉲䊷䊃ᛶ᛫୯䈏ᄢ䈐 䈇䇯䉲䊷䊃ᛶ᛫୯䈏ᄢ䈐䈇႐ว䇮䉲䊥䉮䊮ਛ䈮⊒↢䈜䉎㔚
⩄䈏⺃䈜䉎㔚Ꮕ䉅ᄢ䈐䈇䇯䋨࿑ 3.2.8-5䋩䈘䉌䈮䉲䊷䊃 ᛶ᛫䈏ᄢ䈐䈇䈫䇮ዋᢙ䉨䊞䊥䉝䈱ኼ䈏㐳䈒䈭䉍䇮䊄䊧䉟䊮䈮
㆐䈜䉎㔚⩄䈏䈘䉌䈮Ⴧ䈋䉎䇯䊄䊧䉟䊮䈮 Well 䈎䉌䈱㔚⩄
䈏㓸䉁䉎䈖䈫䈪䇮䉸䊷䉴-P 䉡䉣䊦-䊄䊧䉟䊮䈮䉋䉎ᗐ䊋䉟 䊘䊷䊤䊃䊤䊮䉳䉴䉺䈏ON䈮䈭䉎䇯䈖䈱䈢䉄䇮NMOS䊃䊤䊮䉳
䉴䉺䈱䉸䊷䉴䈎䉌䊄䊧䉟䊮䈮ะ䈎䈇㔚ᵹ䈏ᵹ䉏䉎䇯65nm䈱႐วN+㗔ၞ㑆䈱㑆㓒䈏䈻䉎䈢䉄䇮䈖䈱
3.2.8-2 䊂䊋䉟䉴㩷 LET 㑣୯
(fC/Ǎm)
䉝䊦䊐䉜
⋧ኻ SER
ਛᕈሶ
⋧ኻ SER
65 nm 6.0 255 106±5
--- 7.5 215 103±5
130 nm 8.7 163 ŋ100±5
90 nm 10.5 ŋ100 108±5
3.2.8-3
Sheet resistance (Relative) Technology
(nm)
N-well P-well
130 100 100
90 73 71
65 120 135
࿑ 3.2.8-4
ᗐ䊃䊤䊮䉳䉴䉺䈱േ䈏 90nm 䈮Ყ䈼䈩ኈᤃ䈮䈭䉎 䈫⠨䈋䉌䉏䉎䇯⸘▚䈮䉋䉎䈫䇮䉸䊷䉴䈎䉌䈱㔚ᵹ䈱ᵹ䉏 ㄟ䉂䈲1.8䈮䈭䉎䇯
ࠪࡒࡘ࡚ࠪࡦ⚿ᨐ4㧦ਛᕈሶߦࠃࠆSER
3.2.8-2䈮␜䈜䉋䈉䈮ਛᕈሶ䈱႐ว䈲䇮⚿ᨐ䈏⸘
▚䈱ਇቯᕈ䈱▸࿐䈮ಽᏓ䈚䈩䈍䉍䇮65nm 䈪 LET 㑣 ୯䈏ᦨૐ䈪䈅䉎䈖䈫䈏ᓇ㗀䈚䈩䈇䈭䈇䇯ㆊ䈱⎇ⓥ䈪 䇸ਛᕈሶ䈮䉋䉎 SEU 䈲䊄䊧䉟䊮䉕ㅢ䉌䈭䈇☸ሶ䈎䉌䈱
ᢔ䈮䉋䉎㔚⩄㓸䈱ነਈ䈏㑐ଥ䈅䉎䇹䈫䈇䈉ႎ๔䈏 䈅䉎䈏䇮䈠䈱⼏⺰䈫⍦⋫䈚䈭䈇䇯䈘䉌䈮䇮䇸MCU䊧䊷䊃䈫 PMOS䈱LET㑣୯䈏90nm䈫65nm䈫䈪ᄌ䉒䉌䈭䈇䇹 䈫ቯ䈜䉏䈳䇮65nm䊂䉱䉟䊮䈱ਛᕈሶ䈮ኻ䈜䉎SER 䈲90nm䈱䈠䉏䉋䉍ዊ䈘䈇น⢻ᕈ䈏䈅䉎䇯
(4) 䉁䈫䉄㩷
1) 65nm䊦䊷䊦䈱SRAM䈱SEU㗫ᐲ䈲䉭䊷䊃䈮ኈ㊂䉕ㅊട䈜䉎䈖䈫䈪2000ᡷༀ䈜䉎䈖䈫䈏䉒 䈎䈦䈢䇯
2) ⸥ኻ╷䉕䈚䈭䈇65nm䊦䊷䊦䈱SRAM䈱SEU㗫ᐲ䈲䇮90nm䊦䊷䊦SRAM䈱2⒟ᐲ䈪䈅 䉎䇯
3) 65nm䊦䊷䊦䈪䈲90nm䊦䊷䊦䈮Ყ䈼䈩p䉡䉢䊦䈱䉲䊷䊃ᛶ᛫䈏Ⴧᄢ䈚䇮䉋䉍ᄢ䈐䈭㔚ᵹ䈏䊄䊧䉟 䊮䈮ᵹ䉏䉎䇯䈖䈱䈖䈫䈏䇮ૐ䈇LET㑣୯䈫ǂ✢SERჇട䈱ේ࿃䈫䈭䈦䈩䈇䉎䇯
࿑ 3.2.8-5