MOSFET – P-Channel, POWERTRENCH )
-30 V, -11 A, 13 mW
Description
This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max R
DS(on)= 13 m W at V
GS= −10 V, I
D= −11 A
• Max R
DS(on)= 21.8 mW at V
GS= −4.5 V, I
D= −9 A
• Extended V
GSRange (−25 V) for Battery Applications
• HBM ESD Protection Level of 5.4 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low R
DS(on)• High Power and Current Handling Capability
• This Device is Pb−Free and RoHS Compliant
SpecificationsMAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDS Drain to Source Voltage −30 V
VGS Gate to Source Voltage ±25 V
ID Drain Current
− Continuous (Note 1a)
− Pulsed −11
−55
A
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c)
2.51.2 1.0
W
TJ, TSTG Operating and Storage Junction
Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case 25 °C/W RqJA Thermal Resistance, Junction to
Ambient (Note 1a) 50
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SOIC8 CASE 751EB
MARKING DIAGRAM
FDS4435BZ = Specific Device Code
A = Assembly Site
L = Wafer Lot Number
YW = Assembly Start Week ELECTRICAL CONNECTION
Device Package Shipping† ORDERING INFORMATION
FDS6675BZ SOIC8
(Pb−Free) 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
SG SS DD DD
Pin 1
8 1
7 2
6 3
5 4
D D D D
S S S G
FDS6675BZ ALYW
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol Parameter Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = −250mA, VGS = 0 V −30 V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient ID = −250mA, referenced to 25°C −20 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V −1 mA
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 mA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250mA −1 −2 −3 V
DVGS(th) / DTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = −250mA, referenced to 25°C 15.7 mV/°C
RDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −11 A 10.8 13.0 mW
VGS = −4.5 V, ID = −9 A 17.4 21.8
VGS = −10 V, ID = −11 A, TJ = 125°C 15.0 18.8
gFS Forward Transconductance VDS = −5 V, ID = −11 A 34 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1 MHz 1855 2470 pF
Coss Output Capacitance 335 450 pF
Crss Reverse Transfer Capacitance 330 500 pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = −15 V, ID = −11 A, VGS = −10 V,
RGS = 6 W 3.0 10 ns
tr Rise Time 7.8 16 ns
td(off) Turn−Off Delay Time 120 200 ns
tf Fall Time 60 100 ns
Qg Total Gate Charge VDS = −15 V, VGS = −10 V, ID = −11 A 44 62 nC
Qg Total Gate Charge VDS = −15 V, VGS = −5 V, ID = −11 A 25 35 nC
Qgs Gate to Source Charge 7.2 nC
Qgd Gate to Drain “Miller” Charge 11.4 nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = −2.1 A −0.7 −1.2 V
trr Reverse Recovery Time IF = −11 A, di/dt = 100 A/ms 42 ns
Qrr Reverse Recovery Charge IF = −11 A, di/dt = 100 A/ms 30 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
a.
50°C/W when mounted on a 1 in2 pad of 2 oz copper.b.
105°C/W when mounted on a 0.04 in2 pad of 2 oz copper.c.
125°C/W when mounted on a minimum padTYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage
Figure 3. Normalized On−Resistance vs Junction Temperature
Figure 4. On−Resistance vs Gate to Source Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current
00 10 20 30 40 50 60
PULSE DURATION = 80ms DUTY CYCLE = 0.5%MAX VGS = −5V
VGS= −4V
VGS= −3V VGS = −3.5V VGS= −4.5V
VGS = −10V
−ID, DRAIN CURRENT (A)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
1 2 3 4 0.50
1.0 1.5 2.0 2.5 3.0 3.5 4.0
PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX
NORMALIZED DRAIN TO SOURCE ON−RESISTANCE
−ID, DRAIN CURRENT (A) VGS = −10V
VGS= −5V VGS = −4.5V VGS = −4V
VGS= −3.5V
10 20 30 40 50 60
−80 −40 0 40
0.6 0.8 1.0 1.2 1.4 1.6
ID = −11A VGS = −10V
NORMALIZED DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (5C)
80 100 120 03.0 4.5 6.0 7.5 9.0
10 20 30 40 50
PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX
TJ= 150oC
TJ = 25oC ID= −11A
RDS(on), DRAIN TO SOURCE ON−RESISTANCE(mΩ)
−VGS, GATE TO SOURCE VOLTAGE (V) 10
2.0 2.5 3.0 3.5 4.0 4.5
0 10 20 30 40 50 60
PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX
TJ = −55oC TJ = 25oC TJ= 150oC
−ID, DRAIN CURRENT (A)
−VGS, GATE TO SOURCE VOLTAGE (V)
1E−30.0 0.01
0.1 1 10 100
TJ = −55oC TJ = 25oC TJ= 150oC
VGS= 0V
−IS, REVERSE DRAIN CURRENT (A)
−VSD, BODY DIODE FORWARD VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TYPICAL CHARACTERISTICS
(Continued) (TJ = 25°C unless otherwise noted)Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage
Figure 9. Ig vs VGS Figure 10. Unclamped Inductive Switching Capability
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature Figure 12. Forward Bias Safe Operating Area
0 10 20 30 40 50
0 2 4 6 8 10
VDD = −20V VDD= −10V
−VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE (nC)
VDD = −15V
0.1 1 10
100 1000
f = 1 MHz VGS = 0 V
CAPACITANCE (pF)
−VDS, DRAIN TO SOURCE VOLTAGE (V) Crss
Coss Ciss
4000
30
1E−40 1E−3 0.01
0.1 1 10 100 1000
TJ= 150oC
TJ = 25oC
−Ig(uA)
−VGS(V)
5 10 15 20 25 30 35 110−2 10−1 100 101 102
10
TJ= 25oC
TJ= 125oC
−IAS, AVALANCHE CURRENT(A) 20
tAV, TIME IN AVALANCHE (ms)
025 2 4 6 8 10 12
VGS= −10V
VGS = −4.5V
−ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (5C)
50 75 100 125 150 0.010.01 0.1 1 10 100
0.1 1 10 100
1 ms
1 s 10 s DC 100 ms 10 ms 100 us
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS
LIMITED BY rDS(on) SINGLE PULSE TJ= MAX RATED RqJA= 125oC/W TA= 25oC
200
TYPICAL CHARACTERISTICS
(Continued) (TJ = 25°C unless otherwise noted)Figure 13. Single Pulse Maximum Power Dissipation
Figure 14. Junction To Ambient Transient Thermal Response Curve
10−4 10−3 10−2 10−1 1 10 2 103
0.51 10 102 103 104
SINGLE PULSE RqJA= 125oC/W TA= 25oC
VGS = −10 V
P(PK),PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
10−4 10−3 10−2 10−1 1 10 2 103
10−4 10−3 10−2 10−1 1
SINGLE PULSE RqJA = 125oC/W DUTY CYCLE−DESCENDING ORDER
NORMALIZED THERMAL IMPEDANCE,ZqJA
t, RECTANGULAR PULSE DURATION (s) D = 0.5
0.2 0.1 0.05 0.02 0.01 2
PDM
t1 t2 NOTES:
DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA
10
10
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in
SOIC8 CASE 751EB
ISSUE A
DATE 24 AUG 2017
98AON13735G
DOCUMENT NUMBER: Electronic versions are uncontrolled except when accessed directly from the Document Repository.
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