FDMC007N30D MOSFET, Dual N-Channel, POWERTRENCH

(1)

MOSFET, Dual N-Channel, POWERTRENCH ⁾

Q1: 30 V, 11.6 m W ; Q2: 30 V, 6.4 m W

General Description

This device includes two specialized N−Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N−Channel

• ^{Max r}

DS(on)

= 11.6 m at V

_GS

= 10 V, I

_D

= 10 A

• Max r

DS(on)

= 13.3 m at V

GS

= 4.5 V, I

D

= 9 A Q1: N−Channel

• ^{Max r}

DS(on)

= 6.4 m at V

GS

= 10 V, I

D

= 16 A

• ^{Max r}

DS(on)

= 7.0 m at V

GS

= 4.5 V, I

D

= 15 A

• RoHS Compliant

Applications

• Mobile Computing

• Mobile Internet Devices

• General Purpose Point of Load

MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol Parameter Q1 Q2 Unit

V_DS Drain to Source Voltage 30 30 V

V_GS Gate to Source Voltage (Note 4) ±12 ±12 V ID Drain Current:

− Continuous, TC = 25°C (Note 6)

− Continuous, T_C= 100°C (Note 6)

− Continuous, T_A= 25°C (Note 1a)

− Pulsed (Note 5)

29 18 (Note 1a)10

113

46 29 (Note 1b)16

302 A

EAS Single Pulse Avalanche

Energy (Note 3) 24 54 mJ

PD Power Dissipation for Single Operation:

T_A = 25°C T_A = 25°C

(Note 1a)1.9 (Note 1c)0.7

(Note 1b)2.5 (Note 1d)1.0

W

T_J, T_STG Operating and Storage Junction

Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

www.onsemi.com

WDFN8 3x3 CASE 511DE

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION Dual N-Channel MOSFET

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&2 = Data Code (Year & Week)

&K = Lot

FDMC7N30D = Specific Device Code Bottom

G2 G1

S2 S2 S2 D1

D1

VIN V_IN VIN G_HS Pin 1

G1 D1D1 D1

D1

G2 S2S2 S2

V_IN

G_LS GNDGND GND

$Y&Z&2&K FDMC 7N30D

(2)

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Quantity

FDMC7N30D FDMC007N30D WDFN−8

(Power 33) 3000/Tape&Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Symbol Parameter Q1 Q2 Unit

R_JC Thermal Resistance, Junction to Case 8.2 6.1 °C/W

R_JA Thermal Resistance, Junction to Ambient 65 (Note 1a) 50 (Note 1b) 180 (Note 1c) 125 (Note 1d)

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Condition Type Min Typ Max Unit

OFF CHARACTERISTICS

BV_DSS Drain to Source Breakdown

Voltage I_D = 250A, VGS = 0 V

ID = 250A, VGS = 0 V Q1

Q2 30

30 V

BVDSS

/TJ

Breakdown Voltage Temperature

Coefficient ID = 250A, referenced to 25°C

I_D = 250A, referenced to 25°C Q1

Q2 15

16 mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 24 V, V_GS= 0 V Q1

Q2 1

1 A

I_GSS Gate to Source Leakage Current,

Forward V_GS = ±12 V, VDS = 0 V Q1

Q2 ±100

±100 nA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage V_GS = V_DS, I_D = 250A

V_GS = V_DS, I_D = 250A Q1

Q2 1.0

1.0 1.3

1.8 3.0

3.0 V

VGS(th)

/T_J Gate to Source Threshold Voltage

Temperature Coefficient I_D = 250A, referenced to 25°C

ID = 250A, referenced to 25°C Q1

Q2 −4

−4 mV/°C

rDS(on) Static Drain to Source On

Resistance VGS = 10 V, ID = 10 A

V_GS = 4.5 V, I_D = 9 A

V_GS = 10 V, I_D = 10 A, T_J= 125°C

Q1 7.7

10.88.9

11.613.3 16.3

m

r_DS(on) Static Drain to Source On Resis-

tance V_GS = 10 V, I_D = 16 A

V_GS = 4.5 V, I_D = 15 A

VGS = 10 V, ID = 16 A, TJ = 125°C

Q2 4.4

5.46.2

6.47.0 9.0

m

g_FS Forward Transconductance V_DD = 5 V, I_D = 10 A

VDD = 5 V, ID = 16 A Q1

Q2 46

70 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance V_DS = 15 V, V_GS = 0 V, f = 1 MHz Q1

Q2 792

1685 1110

2360 pF

C_oss Output Capacitance Q1

Q2 230

467 325

655 pF

Crss Reverse Transfer Capacitance Q1

Q2 20

36 30

50 pF

R_g Gate Resistance Q1

Q2 0.1

0.1 2.0

1.2 4.0

2.4

(3)

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)(continued)

Symbol Parameter Test Condition Type Min Typ Max Unit

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time Q1

V_DD = 15 V, I_D = 10 A, V_GS = 10 V, R_GEN = 6

Q2

V_DD = 15 V, I_D = 16 A, V_GS = 10 V, R_GEN = 6

Q1Q2 7

10 14

20 ns

t_r Rise Time Q1

Q2 2

3 10

10 ns

td(off) Turn-Off Delay Time Q1

Q2 19

24 33

39 ns

t_f Fall Time Q1

Q2 2

3 10

10 ns

Q_g(TOT) Total Gate Charge V_GS = 0 V to 10 V Q1 V_DD = 15 V, V_GS = 0 V to 4.5 V I_D = 10 A

Q2V_DD = 15 V, I_D = 16 A

Q1Q2 12

24 17

34 nC

Q1Q2 5.5

11 7.7

16 nC

Q_gs Gate to Source Charge Q1

Q2 1.7

4.4 nC

Qgd Gate to Drain “Miller” Charge Q1

Q2 1.3

2.7 nC

DRAIN−SOURCE DIODE CHARACTERISTICS V_SD Source−Drain Diode Forward

Voltage V_GS = 0 V, I_S = 10 A (Note 2) VGS = 0 V, IS = 1.5 A (Note 2) V_GS = 0 V, I_S = 16 A (Note 2) VGS = 0 V, IS = 2 A (Note 2)

Q1Q1 Q2Q2

0.850.75 0.830.73

1.21.2 1.21.2

V

t_rr Reverse Recovery Time Q1

I_F = 10 A, di/dt = 100 A/s Q2I_F = 16 A, di/dt = 100 A/s

Q1Q2 17

27 31

42 ns

Q_rr Reverse Recovery Charge Q1

Q2 5

10 10

20 nC

NOTES:

1. R_JA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RCA is determined by the user’s board design.

a. 65 °C/W when mounted on

a 1 in² pad of 2 oz copper. b. 50 °C/W when mounted on a1 in² pad of 2 oz copper.

G DF DS SF SS G DF DS SF SS

G DF DS SF SS

G DF DS SF SS c. 180 °C/W when mounted on

a minimum pad of 2 oz copper. d. 125 °C/W when mounted on a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 uS, Duty cycle < 2.0%.

3. Q1: E_AS of 24 mJ is based on starting T_J = 25°C, L = 3 mH, IAS = 4 A, V_DD = 30 V, V_GS = 10 V. 100% tested at L = 0.1 mH, I_AS = 13 A.

Q2: E_AS of 54 mJ is based on starting T_J = 25°C, L = 3 mH, IAS = 6 A, V_DD = 30 V, V_GS = 10 V. 100% tested at L = 0.1 mH, I_AS = 22 A.

4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

5. Pulsed Id please refer to Figure 11 and Figure. 24 SOA graph for more details.

6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal

& electro−mechanical application board design.

(4)

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

(T_J = 25°C unless otherwise noted)

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

vs. Junction Temperature Figure 4. On−Resistance

vs. Gate to Source Voltage

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current

V_GS = 3.5 V V_GS = 3 V

V_GS = 4.5 V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX V_GS = 2.5 V V_GS =10 V

ID, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V) 40

30

20

10

00.0 0.5 10 1.5 2.0

V_GS = 3 V

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

NORMALIZED DRAIN TO SOURCE ON−RESISTANCE

V_GS= 3.5 V

V_GS = 4.5 V V_GS = 2.5 V

V_GS=10 V 6.0

4.5

3.0

1.5

00 10 20 30 40

−75 −50 −25 0 25 50 75 100 125 150 0.7

0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

ID = 10 A V_GS = 10 V

TJ, JUNCTION TEMPERATURE (^oC)

TJ= 125^oC ID= 10 A

TJ= 25^oC

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAIN TO SOURCE ON−RESISTANCE(m) PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX 40

30

20

10

01 2 3 4 5 6 7 8 9 10

0 1 2 3 4

0 10 20 30 40

T_J = 150^oC VDS= 5 V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

TJ = −55^oC TJ = 25^oC ID, DRAIN CURRENT (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10 40

T_J = −55ôC TJ = 25ôC T_J= 150ôC

VGS= 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

(5)

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

(continued) (T_J = 25°C unless otherwise noted)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 0

2 4 6 8 10

Figure 9. Unclamped Inductive

Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature

Figure 11. Forward Bias Safe

Operating Area Figure 12. Single Pulse Maximum

Power Dissipation

ID= 10 A

VDD = 20 V VDD= 10 V

Qg, GATE CHARGE (nC) VDD = 15 V

0 4 8 12 100.1 1 10 30

100 1000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V) Crss

Coss

Ciss

0.0011 0.01 0.1 1 10

10 30

TJ= 100ôC TJ= 25ôC T_J= 125ôC

t_AV, TIME IN AVALANCHE (ms) IAS, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0 5 10 15 20 25 30 35

VGS= 4.5 V

RJC= 8.2^oC/W

VGS= 10 V

ID,DRAIN CURRENT (A)

T_C, CASE TEMPERATURE (5C)

0.01 0.1 1 10 100

0.01 0.1 1 10 100 300

10s

1 s CURVE BENT TO

MEASURED DATA

100s

10 ms

DC 10 s 100 ms 1 ms

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on)

SINGLE PULSE TJ= MAX RATED R_JA= 180^oC/W T_A= 25^oC

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1 10 100 1000 0.1

1 10 100 1000 10000

SINGLE PULSE RJA= 180^oC/W T_A= 25^oC

P( PK

),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

(6)

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

Figure 13. Junction−to−Ambient Transient Thermal Response Curve

10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 11 0 100 1000

0.0001 0.001 0.01 0.1 1 2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

NOTES:

Z_JA (t) = r(t) ×R_JA R_JA = 180°C/W

Peak TJ = PDM ×Z_JA (t) + TA Duty cycle, D = t1/t2

PDM

t1 t₂

10⁻⁵

(7)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

(T_J = 25°C unless otherwise noted)

Figure 14. On Region Characteristics Figure 15. Normalized On−Resistance vs. Drain Current and Gate Voltage

Figure 16. Normalized On Resistance

vs. Junction Temperature Figure 17. On−Resistance

vs. Gate to Source Voltage

Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltage vs. Source Current

−75 −50 −25 0 25 50 75 100 125 150 0.7

0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

1.6 I_D = 16 A VGS = 10 V

TJ, JUNCTION TEMPERATURE (^oC) V_GS =4 V

V_GS = 4.5 V

V_GS = 3.5 V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX V_GS = 10 V

V_GS =3 V

V_DS, DRAIN TO SOURCE VOLTAGE (V) 40

30 20 10

00.0 0.5 10 1.5 2.0 00 10 20 30 40 50 60 70

1 2 3 4

V_GS = 3.5 V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

V_GS=4 V

V_GS = 4.5 V V_GS = 3 V

V_GS= 10 V

2 3 4 5 6 7 8 9 10

0 10 20 30

T_J= 125^oC ID= 16 A

TJ= 25^oC

rDS(on),DRAIN TO SOURCE ON−RESISTANCE(m) PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

01 10 20 30 40 50 60 70

T_J = 150^oC VDS= 5 V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

T_J = −55^oC TJ = 25^oC ID, DRAIN CURRENT (A)

2 3 4 0.0010.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01 0.1 1 10 70

TJ = −55ôC TJ = 25ôC TJ= 150ôC

VGS= 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V) 50

60 70

(8)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to Source Voltage

Figure 22. Unclamped Inductive

Switching Capability Figure 23. Maximum Continuous Drain Current vs. Case Temperature

Figure 24. Forward Bias Safe

Operating Area Figure 25. Single Pulse Maximum

Power Dissipation

0 2 4 6 8 10

ID= 16 A

VDD = 20 V VDD= 10 V

Qg, GATE CHARGE (nC) VDD = 15 V

0 6 12 18 24 30 100.1 1 10 30

100 1000 10000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss

1 10 30

TJ= 100ôC T_J= 25ôC TJ= 125ôC

t_AV, TIME IN AVALANCHE (ms) IAS, AVALANCHE CURRENT (A)

0.001 0.01 0.1 1 10 100 025 50 75 100 125 150

10 20 30 40 50

VGS= 4.5 V RJC= 6.1^oC/W

VGS= 10 V

ID,DRAIN CURRENT (A)

T_C, CASE TEMPERATURE (5C)

0.01 0.1 1 10 100

0.01 0.1 1 10 100 500

10 s 100s

CURVE BENT TO MEASURED DATA

10s

10 ms

DC 1 s 100 ms 1 ms

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on)

SINGLE PULSE TJ= MAX RATED R_JA= 125^oC/W T_A= 25^oC

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 1 10 100 1000 0.1

1 10 100 1000 10000

SINGLE PULSE RJA= 125^o

A= 25^oC

P( PK

),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

C/W T

(9)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

Figure 26. Junction−to−Ambient Transient Thermal Response Curve

10⁻⁵ 10⁻⁴ 10⁻³ 10⁻² 10⁻¹ 11 0 100 1000

0.0001 0.001 0.01 0.1 1 2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

NOTES:

Z_JA (t) = r(t) ×R_JA R_JA = 125°C/W

Peak TJ = PDM ×Z_JA (t) + TA Duty cycle, D = t1/t2

PDM

t1 t₂

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other countries.

(10)

WDFN8 3x3, 0.65P CASE 511DE

ISSUE O

DATE 31 AUG 2016

98AON13621G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 WDFN8 3X3, 0.65P

(11)

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

Email Requests to: [email protected] onsemi Website: www.onsemi.com

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative

FDMC007N30D MOSFET, Dual N-Channel, POWERTRENCH

MOSFET, Dual N-Channel, POWERTRENCH )

Q1: 30 V, 11.6 m W ; Q2: 30 V, 6.4 m W

Q1: N−Channel

• Max r

= 11.6 m at V

= 10 V, I

= 10 A

• Max r

= 13.3 m at V

= 4.5 V, I

= 9 A Q1: N−Channel

• Max r

= 6.4 m at V

= 10 V, I

= 16 A

• Max r

= 7.0 m at V

= 4.5 V, I

= 15 A

• RoHS Compliant

• Mobile Computing

• Mobile Internet Devices

• General Purpose Point of Load

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)

MOSFET, Dual N-Channel, POWERTRENCH ⁾

• ^{Max r}

• ^{Max r}

• ^{Max r}