MOSFET – Dual, N-Channel,POWERTRENCH), Specified2.5 V

MOSFET – Dual, N-Channel, POWERTRENCH ⁾ , Specified

2.5 V

FDC6401N

General Description

This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

and fast switching speed.

Features

• 3.0 A, 20 V. R

= 70 mW @ V

= 4.5 V R

= 95 mW @ V

= 2.5 V

• Low Gate Charge (3.3 nC)

• High Performance Trench Technology for Extremely Low R

• High Power and Current Handling Capability

• This is a Pb−Free and Halide Free Device

• DC/DC Converter

• Battery Protection

• Power Management

ABSOLUTE MAXIMUM RATINGS T_A = 25°C unless otherwise noted

Symbol Parameter Value Unit

VDSS Drain−Source Voltage 20 V

VGSS Gate−Source Voltage ±12 V

I_D Drain Current

−Continuous (Note 1a.)

−Pulsed

3.0 12

A

P_D Power Dissipation for Single Operation

(Note 1a.) (Note 1b.) (Note 1c.)

0.96 0.9 0.7

W

T_J, T_STG Operating and Storage Junction

Temperature Range −55 to

+150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS T_A = 25°C unless otherwise noted

Symbol Parameter Value Unit

R_qJA Thermal Resistance,

Junction−to−Ambient (Note 1a.) 130 °C/W

R Thermal Resistance, 60 °C/W

MARKING DIAGRAM TSOT23 6−Lead (SUPERSOTt−6)

CASE 419BL

401 = Specific Device Code

M = Date Code

G = Pb−Free Package 401 MG

G

Device Package Shipping^† ORDERING INFORMATION

FDC6401N TSOT−23−6 (SUPERSOTt−6)

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

V_DSS R_DS(ON) MAX I_D MAX

20 V 70 mW @ 4.5 V 3.0 A

95 mW @ 2.5 V

PIN ASSIGNMENT

4 5

6 1

2 3 D1S1

G1S2 G2 D2

(Note: Microdot may be in either location)

ELECTRICAL CHARACTERISTICS T_A = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA 20 − − V

DBV_DSS DT_J

Breakdown Voltage Temperature

Coefficient I_D = 250 mA, Referenced to 25°C − 13 − mV/°C

I_DSS Zero Gate Voltage Drain Current V_DS = 16 V, V_GS = 0 V − − 1 mA

I_GSSF Gate–Body Leakage, Forward V_GS = 12 V, V_DS = 0 V − − −100 nA

I_GSSR Gate–Body Leakage, Reverse V_GS = −12 V, V_DS = 0 V − − 100 nA

ON CHARACTERISTICS (Note 2)

V_GS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 0.5 0.9 1.5 V

DV_GS(th) DT_J

Gate Threshold Voltage Temperature

Coefficient ID = 250 mA, Referenced to 25°C − −3 − mV/°C

R_DS(on) Static Drain–Source On–Resistance V_GS = 4.5 V, I_D = 3.0 A V_GS = 2.5 V, I_D = 2.5 A

V_GS = 4.5 V, I_D = 3.0 A, T_J = 125°C

−

−

−

50 66 71

70 95 106

mW

ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 12 − − A

gFS Forward Transconductance VDS = 5 V, ID = 3.0 A − 10 − S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance V_DS = 10 V, V_GS = 0 V, f = 1.0 MHz − 324 − pF

Coss Output Capacitance − 82 − pF

Crss Reverse Transfer Capacitance − 42 − pF

SWITCHING CHARACTERISTICS (Note 2)

td(on) Turn–On Delay Time VDD = 10 V, ID = 1 A,

V_GS = 4.5 V, R_GEN = 6 W − 5 10 ns

tr Turn–On Rise Time − 7 14 ns

td(off) Turn–Off Delay Time − 13 23 ns

t_f Turn–Off Fall Time − 1.6 3 ns

Q_g Total Gate Charge VDS = 10 V, ID = 3.0 A,

V_GS = 4.5 V − 3.3 4.6 nC

Q_gs Gate–Source Charge − 0.95 − nC

Q_gd Gate–Drain Charge − 0.7 − nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S Maximum Continuous Drain–Source Diode Forward Current − − 0.8 A

V_SD Drain–Source Diode Forward Voltage V_GS = 0 V, I_S = 0.8 A (Note 2) − 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R_qJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_qJC is guaranteed by design while R_qCA is determined by the user’s board design.

a. 130°C/W when mounted on a 0.125 in² pad of 2 oz.

copper.

b. 140°C/W when mounted on a .004 in² pad of 2 oz.

copper.

c. 180°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

0 1 2

0 2 6 8

I_D, Drain Current (A) RDS(ON), Normalized Drain−Source On−Resistance

V_DS, Drain−Source Voltage (V) ID, Drain Current (A)

0 2 4 6 12

0.8 1.2 1.4 1.6

Figure 2. On−Resistance Variation with Drain Current and Gate Voltage

12

1.8 2

Figure 3. On−Resistance Variation with Temperature

−50 0 25 100 150

0.6 0.8 1 1.2

V_GS, Gate to Source Voltage (V) RDS(ON), On−Resistance (W)

T_J, Junction Temperature (5C)

1 3 4

0.02 0.1

Figure 4. On−Resistance Variation with Gate−to−Source Voltage 1.6

0.18 0.22

3

0.5 1 1.5 2

0 2 4 8

V_GS, Gate to Source Voltage (V) 10

0.06

5

ID, Drain Current (A)

V_GS = 4.5 V

3 10

8

3.5 V 2.5 V V_GS = 2.0 V

2.5 V

3.0 V

3.5 V

−4.5 V

−25 50 75 125

1.4

I_D = 3.0 A V_GS = 4.5 V

RDS(ON), Normalized Drain−Source On−Resistance

0.14

2

I_D = 1.5 A

TA = 125°C

T_A = 25°C

2.5 6

VDS = 5 V T_A = −55°C 25°C

125°C

VGS = 0 V

T_A = 125°C 25°C

−55°C

0 0.2 0.4 0.6 0.8 1 1.2

V_SD, Body Diode Forward Voltage (V) 0.0001

0.01 0.1 1 10 100

IS, Reverse Drain Current (A) 3.0 V

2.0 V 4

10 1

0.001

TYPICAL CHARACTERISTICS

Figure 7. Gate Charge Characteristics

0 1

0 1 2 3

V_DS, Drain to Source Voltage (V)

Capacitance (pF)

Q_g, Gate Charge (nC) VGS, Gate Source Voltage (V)

0 5 10 20

0 90 180 270

Figure 8. Capacitance Characteristics

5 450

360

Figure 9. Maximum Safe Operating Area

0.1 1 10 100

0.01 1

t₁, Time (s)

P(pk), Peak Transient Power (W)

V_DS, Drain−Source Voltage (V)

00.01 2 4

Figure 10. Single Pulse Maximum Power Dissipation 10

100 10

Figure 11. Transient Thermal Response Curve

NOTE: Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

0.001 1

1000

r(t), Normalized Effective Transient Thermal Resistance

2 3

4

15

0.1

1 10 100

4 I_D = 3 A V_DS = 5 V

15 V 10 V

f = 1 MHz V_GS = 0 V C_ISS

COSS

CRSS

VGS = 4.5 V Single Pulse R_qJA = 180°C/W TA = 25°C

R_DS(ON) Limit 100 ms

1 ms 10 ms 100 ms

1 s I, Drain Current (A)D DC

Single Pulse R_qJA = 180°C/W T_A = 25°C 8

0.0001 0.001 0.01 0.1 1 10 100 1000

R_qJA (t) = r(t) * R_qJA R_qJA = 180°C/W

TJ − TA = P * R_qJA(t) Duty Cycle, D = t₁/t₂ P(pk)

t₁ t2

t₁, Time (s) 0.01

0.1

6

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse

TSOT23 6−Lead CASE 419BL

ISSUE A

DATE 31 AUG 2020

XXX MG G GENERIC MARKING DIAGRAM*

1

XXX = Specific Device Code M = Date Code

G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.

(Note: Microdot may be in either location) SCALE 2:1

1

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PAGE 1 OF 1 TSOT23 6−Lead

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