Shielded Gate PowerTrench [
150 V, 7.3 mW , 101 A
NTP7D3N15MC
Features
• Shielded Gate MOSFET Technology
• Max R
DS(on)= 7.3 m W at V
GS= 10 V, I
D= 62 A
• 50% Lower Qrr than other MOSFET Suppliers
• Lowers Switching Noise/EMI
• 100% UIL Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 150 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain Current RqJC
(Note 2) Steady
State TC = 25°C
ID 101 A
Power Dissipation
RqJC (Note 2) PD 166 W
Continuous Drain Current RqJA
(Notes 1, 2) Steady
State TA = 25°C
ID 12.1 A
Power Dissipation
RqJA (Notes 1, 2) PD 2.4 W
Pulsed Drain Current TC = 25°C, tp = 100 ms IDM 574 A Operating Junction and Storage Temperature
Range TJ, Tstg −55 to
+175 °C
Single Pulse Drain−to−Source Avalanche
Energy (IL = 20 Apk, L = 3 mH) EAS 600 mJ Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
MARKING DIAGRAM www.onsemi.com
V(BR)DSS RDS(ON) MAX ID MAX 150 V 7.3 mW @ 10 V 101 A
G
S N−CHANNEL MOSFET
D
NTP7D3N15MC = Specific Device Code A = Assembly Location
Y = Year
WW = Work Week ZZ = Lot Traceability
TO−220 CASE 221A 12
3 4
AYWWZZ NTP7D3N15MC 1
Gate 3
Source 4
Drain
2 Drain
Device Package Shipping† ORDERING INFORMATION
NTP7D3N15MC TO−220
(Pb−Free) 800 / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Junction−to−Case − Steady State (Note 2) RqJC 0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 62.5
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 150 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ ID = 250 mA, ref to 25°C 71 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 120 V TJ = 25°C 1.0 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 342 mA 2.5 4.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ ID = 342 mA, ref to 25°C −7.3 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 62 A 6.2 7.3
VGS = 8 V, ID = 31 A 6.6 8.4 mW
Forward Transconductance gFS VDS = 10 V, ID = 62 A 119 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 75 V
4250
Output Capacitance COSS 1250 pF
Reverse Transfer Capacitance CRSS 15
Gate−Resistance RG 0.8 1.6 W
Total Gate Charge QG(TOT)
VGS = 10 V, VDS = 75 V; ID = 62 A
53
Threshold Gate Charge QG(TH) 14 nC
Gate−to−Source Charge QGS 23
Gate−to−Drain Charge QGD 8.5
Plateau Voltage VGP 5.8 V
Output Charge QOSS VDD = 75 V, VGS = 0 V 133 nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time td(ON)
VGS = 10 V, VDD = 75 V, ID = 62 A, RG = 4.7 W
27
Rise Time tr 8.5 ns
Turn−Off Delay Time td(OFF) 33
Fall Time tf 5.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 62 A TJ = 25°C 0.93 1.2 V
Reverse Recovery Time tRR VGS = 0 V, VDD = 75 V
dIS/dt = 300 A/ms, IS = 62 A
55 ns
Reverse Recovery Charge QRR 247 nC
Reverse Recovery Time tRR VGS = 0 V, VDD = 75 V
dIS/dt = 1000 A/ms, IS = 62 A
50 ns
Reverse Recovery Charge QRR 720 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
7.0 V
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
00 120 180
60 00
3
Figure 3. Normalized On−Resistance vs.
Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) 150
50 0
−25 0.6 −50
0 10 40
Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
6 5
4 2
60 180 240
1.4 1.0
0.8 0.6 0.0010
ID, DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCERDS(on), ON−RESISTANCE (mW)
ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
6.0 V
ID = 62 A VGS = 10 V
TJ = 25°C
ID = 62 A
VDS = 10 V
7
6
0
1
0.2 0.4
TJ = −55°C VGS = 5.5 V
1.4 2.0
10
2 180 240
4 7
TJ = 175°C
TJ = 25°C 100
0.1
−75 60
10 V
25 1.6
120
5 10
0.01 1.0
0.8
100 75
120 VGS = 5.5 V
20
8 9
10 8
8.0 V
6 V
8 V 7 V
10 V
125
TJ = 150°C
6
TJ = −55°C TJ = 175°C
TJ = 25°C
VGS = 0 V 240
6 4
1.2 1.8
3
30
RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE
300
Pulse Duration = 250 ms Duty Cycle = 0.5% Max
175 2.2
2.4
1 2 5 4
8 1.2
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage
Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60 30
00 2
0.1 10
Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power TC, CASE TEMPERATURE (°C)
150 100
025
0.1
0.01 1
0.0001 0.001 0.00001
10
Figure 11. Unclamped Inductive Switching
Capability Figure 12. Forward Bias Safe Operating Area tAV, TIME IN AVALANCHE (mS)
10 0.01
0.001 1 100
1
VGS, GATE−TO−SOURCE VOLTAGE (V) CAPACITANCE (pF)
ID, DRAIN CURRENT (A) PEAK TRANSIENT POWER (W)
IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A)
f = 1 MHz VGS = 0 V
0.1
RDS(on) Limit Thermal Limit Package Limit
10 ms
100 ms/DC 1 ms 10 ms
TC = 25°C Single Pulse RqJC = 0.9°C/W 10
100 1000
45
15 1 10
100 1K
1 6
10K
10
1000 0.1
1
120
150
10 10
100
100 ms 100K
1K
75 50
RqJC = 0.9°C/W VGS = 10 V
CISS
COSS
CRSS 4
8 VDD = 75 V VDD = 100 V
VDD = 50 V 10K
125
100
0.1 100
90
30
VGS = 8 V
TJ(initial) = 100°C TJ(initial) = 150°C
TJ(initial) = 25°C
1
t, PULSE WIDTH (s)
VDS, DRAIN−TO−SOURCE VOLTAGE (V) 175
ID = 62 A
60
200 100
TYPICAL CHARACTERISTICS
Figure 13. Transient Thermal Impedance t, RECTANGULAR PULSE DURATION (sec)
0.1 0.0001
0.001 0.01 ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W)
1 10
1 0.01
0.00001 0.001
0.1
Single Pulse Duty Cycle = 0.5 0.2
0.1 0.05 0.02 0.01
PDM
t1
Notes:
RqJC = 0.9°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2 t2
CASE 221A ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
STYLE 2:
PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER
STYLE 3:
PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 7:
PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE STYLE 10:
PIN 1. GATE 2. SOURCE 3. DRAIN 4. SOURCE STYLE 5:
PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
STYLE 8:
PIN 1. CATHODE 2. ANODE
3. EXTERNAL TRIP/DELAY 4. ANODE
STYLE 6:
PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 9:
PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
STYLE 11:
PIN 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE
STYLE 12:
PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED
98ASB42148B DOCUMENT NUMBER:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1 TO−220
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