DATA SHEET www.onsemi.com
© Semiconductor Components Industries, LLC, 2005
April, 2022 − Rev. 3 Publication Order Number:
EMX2DXV6T5/D 1
Dual NPN General Purpose Amplifier Transistor
EMX2DXV6T5
This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT−563 package which is designed for low power surface mount applications, where board space is at a premium.
Features
• Reduces Board Space
• High h FE , 210−460 (Typical)
• Low V CE(sat) , < 0.5 V
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A= 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V
(BR)CBO60 Vdc
Collector-Emitter Voltage V
(BR)CEO50 Vdc
Emitter-Base Voltage V
(BR)EBO7.0 Vdc
Collector Current − Continuous I
C100 mAdc
THERMAL CHARACTERISTICS Characteristic
(One Junction Heated) Symbol Max Unit Total Device Dissipation
T
A= 25°C Derate above 25°C
P
D357 (Note 1)
2.9 (Note 1) mW mW/°C Thermal Resistance,
Junction-to-Ambient R
qJA350 (Note 1) °C/W Characteristic
(Both Junctions Heated) Symbol Max Unit Total Device Dissipation
T
A= 25 ° C Derate above 25 ° C
P
D500 (Note 1)
4.0 (Note 1) mW mW/°C Thermal Resistance,
Junction-to-Ambient R
qJA250 (Note 1) °C/W Junction and Storage
Temperature Range T
J, T
stg−55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MARKING DIAGRAM Q
2SOT−563 CASE 463A
STYLE 2 1
6
1
Device Package Shipping
†ORDERING INFORMATION
Q
13R M G G
DUAL NPN GENERAL PURPOSE AMPLIFIER
TRANSISTORS SURFACE MOUNT
(3) (2)
(4) (5) (6)
(1)
EMX2DXV6T5G SOT−563
(Pb−Free) 8000/Tape & Reel 3R = Specific Device Code
M = Month Code G = Pb−Free Package
(Note: Microdot may be in either location)
EMX2DXV6T1G SOT−563
(Pb−Free) 4000/Tape & Reel
EMX2DXV6T5
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ELECTRICAL CHARACTERISTICS (T
A= 25°C)
Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage
(I
C= 50 mAdc, I
E= 0) V
(BR)CBO60 − − Vdc
Collector-Emitter Breakdown Voltage
(I
C= 1.0 mAdc, I
B= 0) V
(BR)CEO50 − − Vdc
Emitter-Base Breakdown Voltage
(I
E= 50 mAdc, I
E= 0) V
(BR)EBO7.0 − − Vdc
Collector-Base Cutoff Current
(V
CB= 60 Vdc, I
E= 0) I
CBO− − 0.5 mA
Emitter-Base Cutoff Current
(V
EB= 7.0 Vdc, I
B= 0) I
EBO− − 0.5 mA
Collector-Emitter Saturation Voltage (Note 2)
(I
C= 50 mAdc, I
B= 5.0 mAdc) V
CE(sat)− − 0.4 Vdc
DC Current Gain (Note 3)
(V
CE= 6.0 Vdc, I
C= 1.0 mAdc) h
FE120 − 560 −
Transition Frequency
(V
CE= 12 Vdc, I
C= 2.0 mAdc, f = 30 MHz) f
T− 180 − MHz
Output Capacitance
(V
CB= 12 Vdc, I
C= 0 Adc, f = 1 MHz) C
OB− 2.0 − pF
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 m s, D.C. ≤ 2%.
EMX2DXV6T5
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TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. I
C− V
CEV
CE, COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain I
C, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region I
B, BASE CURRENT (mA)
Figure 4. On Voltage I
C, COLLECTOR CURRENT (mA)
I C , COLLECT OR CURRENT (mA)
60
0 50 40 30 20 10
0 2 4 6 8
T
A= 25 ° C 160 m A
140 m A 120 m A 100 m A
80 m A 60 m A 40 m A I
B= 20 m A
DC CURRENT GAIN
1000
0.1 100
10 1 10 100
T
A= 25 ° C
T
A= - 25 ° C T
A= 75 ° C
V
CE= 10 V
V CE , COLLECT OR‐EMITTER VOL TAGE (V)
2
0.01 1.5
1
0.5
0 0.1 1 10 100
T
A= 25 ° C
COLLECT OR VOL TAGE (mV)
900
0.2 800 700 600 500 400 300 200 100
0.5 1 5 10 20 40 60 80 100 150 200
T
A= 25 ° C V
CE= 5 V
0
Figure 5. Capacitance
V
CB(V)
Figure 6. Capacitance V
EB(V)
20
0 18 16
14
12
10 1 2 3 4
7
0
C ib , INPUT CAP ACIT ANCE (pF)
6 5 4 3 2
1 10 20 30 40
C ob , CAP ACIT ANCE (pF)
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021 SCALE 4:1
1 6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
98AON11126D DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2 SOT−563, 6 LEAD
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD CASE 463A
ISSUE H
DATE 26 JAN 2021
XX = Specific Device Code M = Month Code G = Pb−Free Package
XX M G GENERIC MARKING DIAGRAM*
1
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
98AON11126D DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2 SOT−563, 6 LEAD
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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