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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

N-Cha nnel Power Trench ® MOSFET

FDD9407-F085

N-Channel Power Trench ^® MOSFET 40V, 100A, 2.0m Ω

Features

„Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A

„Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A

„UIS Capability

„RoHS Compliant

„Qualified to AEC Q101

Applications

„ Automotive Engine Control

„ Powertrain Management

„ Solenoid and Motor Drivers

„ Electronic Steering

„ Integrated Starter/alternator

„ Distributed Power Architectures and VRM

„Primary Switch for 12V Systems

MOSFET Maximum Ratings ^T

J

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

_DSS

Drain to Source Voltage 40 V

V

_GS

Gate to Source Voltage ±20 V

I

_D

Drain Current - Continuous (V

_GS

=10) (Note 1) T

_C

= 25°C 100 Pulsed Drain Current T

_C

= 25°C

See Figure4

A

E

_AS

Single Pulse Avalanche Energy (Note 2) 171 mJ

P

_D

Power Dissipation 227 W

Derate above 25

^o

C 1.52 W/

^o

C

T

_J

, T

_STG

Operating and Storage Temperature -55 to + 175

^o

C

R

_θJC

Thermal Resistance Junction to Case 0.66

^o

C/W

R

_θJA

Maximum Thermal Resistance Junction to Ambient (Note 3) 52

^o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD9407 FDD9407

-

F085 D-PAK(TO-252) 13” 12mm 2500 units

Notes:

1: Current is limited by bondwire configuration.

2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche

3:

R

_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

D

G

S G

S

D

TO-252

D-PAK

(TO-252)

N-Cha nnel Power Trench ® MOSFET

www.onsemi.com 2

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

B

_VDSS

Drain to Source Breakdown Voltage I

_D

= 250μA, V

_GS

= 0V 40 - - V I

_DSS

Drain to Source Leakage Current V

_DS

= 40V, T

_J

= 25

^o

C - - 1

μA

V

_GS

= 0V T

_J

= 175

^o

C(Note 4) - - 1 mA

I

_GSS

Gate to Source Leakage Current V

_GS

= ±20V - - ±100 nA

V

_GS(th)

Gate to Source Threshold Voltage V

_GS

= V

_DS

, I

_D

= 250μA 2.0 3.1 4.0 V

r

_DS(on)

Drain to Source On Resistance I

_D

= 80A, V

_GS

= 10V

T

_J

= 25

^o

C - 1.6 2 mΩ

T

_J

= 175

^o

C(Note 4) - 2.64 3.22 mΩ

C

_iss

Input Capacitance

V

_DS

= 25V, V

_GS

= 0V, f = 1MHz

- 6390 - pF

C

_oss

Output Capacitance - 1580 - pF

C

_rss

Reverse Transfer Capacitance - 95 - pF

R

_g

Gate Resistance f = 1MHz - 2.3 -

Ω

Q

_g(ToT)

Total Gate Charge at 10V V

_GS

= 0 to 10V V

_DD

= 32V I

_D

= 80A

- 86 112 nC

Q

_g(th)

Threshold Gate Charge V

_GS

= 0 to 2V - 12 15.6 nC

Q

_gs

Gate to Source Gate Charge - 30 - nC

Q

_gd

Gate to Drain “Miller“ Charge - 15 - nC

Switching Characteristics

Drain-Source Diode Characteristics

Notes:

4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

t

_on

Turn-On Time

V

_DD

= 20V, I

_D

= 80A, V

_GS

= 10V, R

_GEN

= 6Ω

- - 120 ns

t

_d(on)

Turn-On Delay Time - 27 - ns

t

_r

Rise Time - 48 - ns

t

_d(off)

Turn-Off Delay Time - 42 - ns

t

_f

Fall Time - 18 - ns

t

_off

Turn-Off Time - - 97 ns

V

_SD

Source to Drain Diode Voltage I

_SD

= 80A, V

_GS

= 0V - - 1.25 V

I

_SD

= 40A, V

_GS

= 0V - - 1.2 V

T

_rr

Reverse Recovery Time I

_F

= 80A, dI

_SD

/dt = 100A/μs, V

_DD

=32V

- 58 88 ns

Q

_rr

Reverse Recovery Charge - 83 143 nC

N-Cha nnel Power Trench ® MOSFET Typical Characteristics

Figure 1. Normalized Power Dissipation vs Case Temperature

0 25 50 75 100 125 150 175

0.0 0.2 0.4 0.6 0.8 1.0 1.2

PO W ER DISS IP ATIO N MULTIP LIER

T

C

, CASE TEMPERATURE(

^o

C)

Figure 2. Maximum Continuous Drain Current vs Case Temperature

25 50 75 100 125 150 175 200 0

50 100 150 200 250 300

CURRENT LIMITED BY SILICON CURRENT LIMITED

BY PACKAGE VGS = 10V

I

D

, DRAIN CURRE NT (A)

T

C

, CASE TEMPERATURE(

^o

C)

Figure 3.

10

^-5

10

^-4

10

^-3

10

^-2

10

^-1

10

⁰

10

¹

0.01 0.1 1

SINGLE PULSE D = 0.50

0.20 0.10 0.05 0.02 0.01

NO RMA LIZED THER MA L IMPE DANCE , Z

θJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

2

NOTES:

DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC

PDM

t1 t2

Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

10

^-5

10

^-4

10

^-3

10

^-2

10

^-1

10

⁰

10

¹

1 10 100 1000

VGS = 10V

SINGLE PULSE

I

DM,

PE AK CU RRE NT (A )

t, RECTANGULAR PULSE DURATION(s)

TC = 25^oC

I = I2 175 - TC 150 FOR TEMPERATURES ABOVE 25^oC DERATE PEAK CURRENT AS FOLLOWS:

N-Cha nnel Power Trench ® MOSFET

Figure 5.

1 10 100

0.1 1 10 100 1000

100us

1ms I, DRAIN CURRENT (A)D 10ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS AREA MAY BE

LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC

100ms

Forward Bias Safe Operating Area

1E-3 1 0.01 0.1 1 10 100 1000 10

100 1000

STARTING TJ = 150^oC

STARTING TJ = 25^oC

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

Figure 6. Unclamped Inductive Switching Capability

Figure 7.

3 4 5 6 7

0 50 100 150 200 250

TJ = -55^oC TJ = 25^oC

TJ = 175^oC PULSE DURATION = 80^μs DUTY CYCLE = 0.5% MAX

VDD= 5V

I

D

, D RAIN CURRENT (A)

V

GS

, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics Figure 8.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1 10 100 300

TJ = 25 ^oC TJ = 175 ^oC

VGS = 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Forward Diode Characteristics

Figure 9.

0 1 2

0 50 100 150 200 250

5.5V VGS 15V Top 10V8V 7V6V 5.5V Bottom

80μs PULSE WIDTH Tj=25^oC

I

D

, DR AI N CU RRE N T (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Saturation Characteristics Figure 10.

0.0 0.5 1.0 1.5 2.0

0 50 100 150 200 250

5.5V ^5.5V

I

D

, DR AI N CU RRE N T (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

VGS 15V Top 10V8V 7V6V 5.5V Bottom

80μs PULSE WIDTH Tj=175^oC

Saturation Characteristics

www.onsemi.com 4

- F085 N-Cha nnel Power Trench ® MOSFET

Figure 11.

2 4 6 8 10

0 6 12 18 24

30

ID = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ)

VGS

, GATE TO SOURCE VOLTAGE (V)

TJ = 25^oC TJ = 175^oC

Rdson vs Gate Voltage Figure 12. Normalized Rdson vs Junction Temperature

-80 -40 0 40 80 120 160 200

0.6 0.8 1.0 1.2 1.4 1.6

1.8

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

I_D = 80A V_GS = 10V

NO RMALIZE D DRA IN TO S O URCE O N-R ES IS TA NCE

T

_J

, JUNCTION TEMPERATURE

(^o

C

)

Figure 13.

-80 -40 0 40 80 120 160 200

0.4 0.6 0.8 1.0 1.2

VGS = VDS I_D = 250μA

NO RMA LIZED G A TE THRE SHO LD VO LT A G E

T

J

, JUNCTION TEMPERATURE(

^o

C)

Normalized Gate Threshold Voltage vs

Temperature Figure 14.

-80 -40 0 40 80 120 160 200

0.8 0.9 1.0 1.1 1.2

ID = 1mA

NOR M ALIZE D DRA IN TO SO UR CE BREAKDOWN VOL TA G E

T

J

, JUNCTION TEMPERATURE (

^o

C) Normalized Drain to Source Breakdown Voltage vs Junction Temperature

Figure 15.

0.1 1 10 100

10 100 1000 10000

f = 1MHz VGS = 0V

Crss Coss Ciss

CAP ACITANCE (p F)

V

DS

, DRAIN TO SOURCE VOLTAGE

(

V

)

Capacitance vs Drain to Source

Voltage Figure 16.

0 20 40 60 80 100

0 2 4 6 8

10

ID = 80A

V

DD

= 20V

Q

g

, GATE CHARGE(nC) V

GS

, GATE TO SO U RCE VOLTAGE( V)

Gate Charge vs Gate to Source Voltage

Typical Characteristics

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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