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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

© Semiconductor Components Industries, LLC, 2012

May, 2019 − Rev. 4 1 Publication Order Number:

NTMFS4921N/D

MOSFET – Power, Single, N-Channel, SO-8 FL

30 V, 58.5 A

Features

• ^{Low R}

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Thermally Enhanced SO−8 Package

• These are Pb−Free Device

• CPU Power Delivery

• DC−DC Converters

• High Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS 30 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain Current R_qJA (Note 1)

Steady State

T_A = 25°C I_D 13.8 A

T_A = 85°C 10

Power Dissipation

R_qJA (Note 1) T_A = 25°C P_D 2.14 W

Continuous Drain Current R_qJA v 10 sec

T_A = 25°C I_D 22.4 A

T_A = 85°C 16.1

Power Dissipation

R_qJA, t v 10 sec T_A = 25°C P_D 5.61 W

Continuous Drain Current R_qJA (Note 2)

TA = 25°C ID 8.8 A

TA = 85°C 6.4

Power Dissipation

R_qJA (Note 2) TA = 25°C PD 0.87 W

Continuous Drain Current R_qJC (Note 1)

TC = 25°C I_D 58.5 A

TC = 85°C 42.3

Power Dissipation

R_qJC (Note 1) T_C = 25°C P_D 38.5 W

Pulsed Drain

Current t_p=10ms T_A = 25°C I_DM 117 A

Current limited by package T_A = 25°C I_Dmaxpkg 100 A Operating Junction and Storage

Temperature T_J,

T_STG −55 to

+150 °C

Source Current (Body Diode) I_S 38.5 A

Drain to Source dV/dt dV/dt 6 V/ns

SO−8 FLAT LEAD CASE 488AA

STYLE 1

MARKING DIAGRAM http://onsemi.com

A = Assembly Location

Y = Year

W = Work Week ZZ = Lot Traceability

4921N AYWZZ

1

V_(BR)DSS R_DS(ON) MAX I_D MAX 30 V 6.95 mW @ 10 V

58.5 A 10.8 mW @ 4.5 V

G (4)

S (1,2,3) N−CHANNEL MOSFET

D (5,6)

Device Package Shipping^† ORDERING INFORMATION

NTMFS4921NT1G SO−8FL

(Pb−Free) 1500 / Tape & Reel NTMFS4921NT3G SO−8FL

(Pb−Free) 5000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

S S S G

D

D D

D

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MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Single Pulse Drain−to−Source Avalanche Energy (V_DD = 50 V, V_GS = 10 V, IL = 24 Apk, L = 0.3 mH, RG = 25 W)

EAS 86 mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s) TL 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) R_qJC 3.25

°C/W

Junction−to−Ambient – Steady State (Note 1) R_qJA 58.3

Junction−to−Ambient – Steady State (Note 2) R_qJA 144.1

Junction−to−Ambient − t v 10 sec R_qJA 22.3

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V_(BR)DSS VGS = 0 V, ID = 250 mA 30 V

Drain−to−Source Breakdown Voltage

(transient) V_(BR)DSSt V_GS = 0 V, I_D(aval) = 13 A,

Tcase = 25°C, ttransient = 100 ns 34 V Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/

T_J 25 mV/°C

Zero Gate Voltage Drain Current I_DSS V_GS = 0 V,

V_DS = 24 V T_J = 25°C 1

T_J = 125°C 10 mA

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 250 mA 1.45 1.8 2.5 V

Negative Threshold Temperature Coefficient V_GS(TH)/T_J mV/°C

Drain−to−Source On Resistance R_DS(on) V_GS = 10 V to

11.5 V I_D = 30 A 5.3 6.95

mW

I_D = 15 A 5.2

V_GS = 4.5 V I_D = 30 A 8.6 10.8

I_D = 15 A 8.4

Forward Transconductance g_FS V_DS = 1.5 V, I_D = 30 A 54 S

CHARGES AND CAPACITANCES

Input Capacitance C_ISS

V_GS = 0 V, f = 1 MHz, V_DS = 12 V

1400

Output Capacitance COSS 282 pF

Reverse Transfer Capacitance CRSS 136

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

10.7 16

Threshold Gate Charge QG(TH) 1.4 nC

Gate−to−Source Charge QGS 4.1

Gate−to−Drain Charge QGD 3.8

Total Gate Charge Q_G(TOT) V_GS = 11.5 V, V_DS = 15 V,

I_D = 30 A 25 nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t_d(ON)

V_GS = 4.5 V, V_DS = 15 V, I_D = 15 A, R_G = 3.0 W

13.3

Rise Time t_r 38 ns

Turn−Off Delay Time t_d(OFF) 16.6

Fall Time t_f 3.8

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(ON)

V_GS = 11.5 V, V_DS = 15 V, ID = 15 A, RG = 3.0 W

8.2

Rise Time tr 20 ns

Turn−Off Delay Time td(OFF) 23

Fall Time tf 3.1

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD V_GS = 0 V,

IS = 30 A

T_J = 25°C 0.85 1.0

T_J = 125°C 0.74 V

Reverse Recovery Time t_RR

VGS = 0 V, dIS/dt = 100 A/ms, I_S = 30 A

11

Charge Time t_a 7.5 ns

Discharge Time t_b 3.5

Reverse Recovery Charge Q_RR 2.0 nC

PACKAGE PARASITIC VALUES

Source Inductance L_S

T_A = 25°C

1.3 nH

Drain Inductance L_D 0.005

Gate Inductance L_G 1.84

Gate Resistance R_G 0.5 1.1 2.0 W

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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0 10 20 30 40 50 60 70 80 90

0 1 2 3 4 5 6

Figure 1. On−Region Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

10 V

T_J = 25°C V_GS = 4.5 V

5.0 V 4.0 V

3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V

0 10 20 30 40 50 60 70 80 90 100

0 1 2 3 4 5 6

ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics VGS, GATE−TO−SOURCE VOLTAGE (V) V_DS≥ 10 V

T_J = 25°C TJ = 125°C

T_J = −55°C

0 0.01 0.02 0.03 0.04

2 4 6 8 10

Figure 3. On−Resistance vs. Gate−to−Source Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A T_J = 25°C

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.002 0.0045 0.007 0.0095 0.012 0.0145 0.017 0.0195

30 40 50 60 70 80 90 100

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

V_GS = 4.5 V

VGS = 11.5 V T_J = 25°C

0.6 0.8 1 1.2 1.4 1.6 1.8

−50 −25 0 25 50 75 100 125 150

Figure 5. On−Resistance Variation with Temperature

TJ, JUNCTION TEMPERATURE (°C) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

ID = 30 A V_GS = 10 V

10 100 1000 10000

5 10 15 20 25 30

Figure 6. Drain−to−Source Leakage Current vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (nA)

T_J = 150°C VGS = 0 V

TJ = 125°C

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0 200 400 600 800 1000 1200 1400 1600 1800

0 5 10 15 20 25 30

Figure 7. Capacitance Variation

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

T_J = 25°C

Coss

Ciss

C_rss

0 2 4 6 8 10

0 4 8 12 16 20 24

Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

Q_g, TOTAL GATE CHARGE (nC) VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 30 A TJ = 25°C QT

VGS

Q_gd Qgs

1 10 100 1000

1 10 100

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

R_G, GATE RESISTANCE (W)

t, TIME (ns)

V_DD = 15 V I_D = 30 A V_GS = 11.5 V

t_f t_r td(off)

td(on)

0 5 10 15 20 25 30

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Figure 10. Diode Forward Voltage vs. Current V_SD, SOURCE−TO−DRAIN VOLTAGE (V) IS, SOURCE CURRENT (A)

V_GS = 0 V T_J = 25°C

0.1 1 10 100 1000

0.1 1 10 100

Figure 11. Maximum Rated Forward Biased Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

10 ms 100 ms

1 ms 10 ms dc V_GS = 20 V

Single Pulse T_C = 25°C

RDS(on) Limit Thermal Limit Package Limit

0 10 20 30 40 50 60 70 80 90 100

25 50 75 100 125 150

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE(°C) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ)

ID = 24 A

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0 10 20 30 40 50 60 70 80 90

0 10 20 30 40 50 60 70 80 90

Figure 13. gDRAIN CURRENT (A)_FS vs. Drain Current gFS (S)

V_DS = 1.5 V

0.1 1 10 100

0.1 1 10 100 1000 10000

Figure 14. Avalanche CharacteristicsPULSE WIDTH (ms) Id (A)

125°C

100°C 25°C

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M 3.00 3.40 q 0 _ −−− ^3.8012 _ DFN5 5x6, 1.27P

(SO−8FL) CASE 488AA

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

1 2 3 4

TOP VIEW

SIDE VIEW

BOTTOM VIEW D1

E1 q

D

E 2

2 B A

0.20 C

0.20 C

2 X

2 X

DIM MINMILLIMETERSNOM A 0.90 1.00 A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28

D 5.15 BSC

D1 4.50 4.90 D2 3.50 −−−

E 6.15 BSC

E1 5.50 5.80 E2 3.45 −−−

e 1.27 BSC

G 0.51 0.61 K 1.20 1.35 L 0.51 0.61 L1 0.05 0.17

A 0.10 C

0.10 C

DETAIL A

1 4

L1 e/2

8X

G D2 E2

K b

A 0.10 C B 0.05 c L

DETAIL A

A1

3 Xe c

4 X

C

SEATING PLANE

MAX 1.10 0.05 0.51 0.33 5.10 4.22 6.104.30

0.71 1.50 0.710.20

STYLE 1:

PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN

M

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.270

2X

0.750 1.000

0.905

0.475 4.530

1.530 4.560 0.495

3.200 1.330

0.965

2X 2X

3X 4X

4X

PIN 5 (EXPOSED PAD)

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Phone: 421 33 790 2910 Japan Customer Focus Center

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NTMFS4921N/D

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