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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

el Shielded Gate P o we rT ren ch ® MOSF ET

Semiconductor Components Industries, LLC, 2017 Publication Order Number:

www.onsemi.com

FDMS003N08C

N-Channel Shielded Gate PowerTrench ^® MOSFET 80 V, 147 A, 3.1 mΩ

Features

„

Shielded Gate MOSFET Technology

„

Max r

= 3.1 mΩ at V

= 10 V, I

= 56 A

„

Max r

= 8.1 mΩ at V

= 6 V, I

= 28 A

„

50% lower Qrr than other MOSFET suppliers

„

Lowers switching noise/EMI

„

MSL1 robust package design

„

100% UIL tested

„

RoHS Compliant

General Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench

process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications

„

Primary DC-DC MOSFET

„

Synchronous Rectifier in DC-DC and AC-DC

„

Motor Drive

„

Solar

Bottom

Power 56 Top

Pin 1 G S S

S

D D D

D

D

D D D S

S S G Pin 1

MOSFET Maximum Ratings

T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

V

Drain to Source Voltage 80 V

V

Gate to Source Voltage ±20 V

I

Drain Current -Continuous T

= 25 °C (Note 5) 147 -Continuous T

= 100 °C (Note 5) 92 A -Continuous T

= 25 °C (Note 1a) 22 -Pulsed (Note 4) 658

E

Single Pulse Avalanche Energy (Note 3) 486 mJ P

Power Dissipation T

= 25 °C 125

Power Dissipation T

= 25 °C (Note 1a) 2.7 W

T

, T

Operating and Storage Junction Temperature Range -55 to +150 °C

R

Thermal Resistance, Junction to Case 1

R

Thermal Resistance, Junction to Ambient (Note 1a) 45 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS003N08C FDMS003N08C Power 56 13 ’’ 12 mm 3000 units

el Shielded Gate P o we rT ren ch ® MOSF ET

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Electrical Characteristics ^T

= 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

BV

Drain to Source Breakdown Voltage I

= 250 μA, V

= 0 V 80 V

ΔBV_DSS ΔT_J

Breakdown Voltage Temperature

Coefficient I

= 250 μA, referenced to 25 °C 60 mV/°C

I

Zero Gate Voltage Drain Current V

= 64 V, V

= 0 V 1

I

Gate to Source Leakage Current V

= ±20 V, V

= 0 V 100 nA

V

Gate to Source Threshold Voltage V

= V

, I

= 310 μA 2.0 2.9 4.0 V

ΔV_GS(th) ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient I

= 310 μA, referenced to 25 °C -8.2 mV/°C

r

Static Drain to Source On Resistance

V

= 10 V, I

= 56 A 2.6 3.1

mΩ

V

= 6 V, I

= 28 A 3.8 8.1

V

= 10 V, I

= 56 A, T

= 125 °C 4.3 5.2

g

Forward Transconductance V

= 5 V, I

= 56 A 123 S

C

Input Capacitance

V

= 40 V, V

= 0 V, f = 1 MHz

3820 5350 pF

C

Output Capacitance 1335 1870 pF

C

Reverse Transfer Capacitance 44 80 pF

R

Gate Resistance 0.1 0.6 1.3

t

Turn-On Delay Time

V

= 40 V, I

= 56 A, V

= 10 V, R

= 6 Ω

20 36 ns

t

Rise Time 8 16 ns

t

Turn-Off Delay Time 40 64 ns

t

Fall Time 12 23 ns

Q

Total Gate Charge V

= 0 V to 10 V

V

= 40 V, I

= 56 A

52 73 nC

Q

Total Gate Charge V

= 0 V to 6 V 33 46 nC

Q

Gate to Source Charge 17 nC

Q

Gate to Drain “Miller” Charge 10 nC

Q

Output Charge V

= 40 V, V

= 0 V 77 nC

Q

Total Gate Charge Sync V

= 0 V, I

= 56 A 44 nC

V

Source to Drain Diode Forward Voltage V

= 0 V, I

= 2.2 A (Note 2) 0.7 1.2 V

= 0 V, I

= 56 A (Note 2) 0.8 1.3 V t

Reverse Recovery Time

I

= 28 A, di/dt = 300 A/μs 28 45 ns

Q

Reverse Recovery Charge 53 84 nC

t

Reverse Recovery Time

I

= 28 A, di/dt = 1000 A/μs 23 36 ns

Q

Reverse Recovery Charge 121 194 nC

Notes:

1. R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E_AS of 486 mJ is based on starting T_J = 25 °C; N-ch: L = 3 mH, I_AS = 18 A, V_DD = 80 V, V_GS =10 V. 100% test at L = 0.1 mH, I_AS = 57 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

G DF DS SF SS G DF DS SF SS

a. 45 °C/W when mounted on a 1 in² pad of 2 oz copper.

b. 115 °C/W when mounted on a minimum pad of 2 oz copper.

el Shielded Gate P o we rT ren ch ® MOSF ET Typical Characteristics ^T

= 25 °C unless otherwise noted.

Figure 1.

0 1 2 3 4 5

0 50 100 150 200 250 300

V_GS = 5 V V_GS = 6 V

V_GS = 10 V

V_GS = 7 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

V_GS = 5.5 V V_GS = 8 V

ID, DRAIN CURRENT (A)

V_DS

,

On Region Characteristics Figure 2.

0 50 100 150 200 250 300

0 1 2 3 4 5

V_GS = 10 V V_GS = 8 V

V_GS = 5 V

V_GS = 6 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

I_D, DRAIN CURRENT (A)

V_GS = 7 V V_GS = 5.5 V

Normalized On-Resistance vs. Drain Current and Gate Voltage

Figure 3. Normalized On Resistance -75 -50 -25 0 25 50 75 100 125 150 0.6

0.8 1.0 1.2 1.4 1.6 1.8 2.0

I_D = 56 A V_GS = 10 V

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

TJ

,

(

)

vs. Junction Temperature Figure 4.

4 5 6 7 8 9 10

0 5 10 15 20

T_J = 125 ^oC I_D = 56 A

T_J = 25 ^oC

VGS

,

rDS(on),DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs. Gate to Source Voltage

Figure 5. Transfer Characteristics

2 3 4 5 6 7

0 50 100 150 200 250 300

T_J = 150 ^oC V_DS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

T_J = -55 ^oC T_J = 25 ^oC ID, DRAIN CURRENT (A)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10 100 300

T_J = -55 ^oC T_J = 25 ^oC T_J = 150 ^oC

V_GS = 0 V

IS, REVERSE DRAIN CURRENT (A)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs. Source Current

el Shielded Gate P o we rT ren ch ® MOSF ET

www.onsemi.com Figure 7.

0 10 20 30 40 50 60

0 2 4 6 8 10

I_D = 56 A

V_DD = 50 V V_DD = 40 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC) VDD = 30 V

Gate Charge Characteristics Figure 8.

0.1 1 10 80

1 10 100 1000 10000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

V_DS, DRAIN TO SOURCE VOLTAGE (V) C_rss Coss C_iss

Capacitance vs. Drain to Source Voltage

Figure 9.

0.001 1 0.01 0.1 1 10 100 1000 10

100

T_J = 125 ^oC T_J = 25 ^oC

T_J = 100 ^oC

t_AV, TIME IN AVALANCHE (ms) IAS, AVALANCHE CURRENT (A)

Unclamped Inductive

Switching Capability Figure 10.

25 50 75 100 125 150

0 30 60 90 120 150

V_GS = 6 V

R_θJC = 1.0 ^oC/W

V_GS = 10 V

ID, DRAIN CURRENT (A)

T_C

,

(

)

Maximum Continuous Drain Current vs. Case Temperature

Figure 11.

0.1 1 10 100 500

0.1 1 10 100 1000

CURVE BENT TO MEASURED DATA

10 μs

100 ms/DC 10 ms 1 ms 100 μs

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on) SINGLE PULSE TJ= MAX RATED R_θJC= 1.0 ^oC/W TC= 25 ^oC

Forward Bias Safe

Operating Area Figure 12. Single Pulse Maximum Power Dissipation

10

10

10

10

10

1 10

100 1000 10000 100000

SINGLE PULSE R_θJC= 1.0 ^oC/W T_C= 25 ^oC

P( PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics ^T

= 25 °C unless otherwise noted.

el Shielded Gate P o we rT ren ch ® MOSF ET

Figure 13.

10

10

10

10

10

1

0.001 0.01 0.1 1 2

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec) D = 0.5

0.2 0.1 0.05 0.02 0.01

NOTES:

Z_θJC(t) = r(t) x R_θJC R_θJC = 1.0 ^oC/W Duty Cycle, D = t1 / t2 Peak T_J = P_DM x Z_θJC(t) + T_C

P_DM

t₁ t₂

Junction-to-Case Transient Thermal Response Curve

Typical Characteristics ^T

= 25 °C unless otherwise noted.

el Shielded Gate P o we rT ren ch ® MOSF ET

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Dimensional Outline and Pad Layout

ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by

ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.