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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
N-Channel, D 2 PAK7
100 V, 4.1 m W , 203 A
NTBGS004N10G
Features
• Low R
DS(on)• High Current Capability
• Wide SOA
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
• Hot Swap in 48 V Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain Current RJC
(Note 2) Steady
State TC = 25°C
ID 203 A
Power Dissipation
RJC (Note 2) PD 340 W
Continuous Drain Current RJA
(Notes 1, 2) Steady
State TA = 25°C
ID 21 A
Power Dissipation
RJA (Notes 1, 2) PD 3.7 W
Pulsed Drain Current TA = 25°C, tp = 10 s IDM 2983 A Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175 °C
Source Current (Body Diode) IS 283 A
Single Pulse Drain−to−Source Avalanche
Energy (IL = 106 Apk, L = 0.1 mH) EAS 561 mJ Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
MARKING DIAGRAM www.onsemi.com
V(BR)DSS RDS(ON) MAX ID MAX 100 V 4.1 m @ 10 V 203 A
G (Pin 1)
S (Pins 2,3,5,6,7) N−CHANNEL MOSFET D (Pin 4, TAB)
Device Package Shipping† ORDERING INFORMATION
NTBGS004N10G D2PAK7 (Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
D2PAK7 CASE 418AY
AYWWZZ NTBG S004N10G
A = Assembly Location Y = Year
WW = Work Week ZZ = Assembly Lot Code
NTBGS004N10G = Specific Device Code
NTBGS004N10G
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THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 2) RJC 0.44 °C/W
Junction−to−Ambient − Steady State (Note 2) RJA 40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ ID = 250 A, ref to 25°C 81.3 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 80 V TJ = 25°C 1.0 A
TJ = 125°C 100 A
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 500 A 2.0 4.0 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ ID = 500 A, ref to 25°C −9.3 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 100 A 3.0 4.1 m
Forward Transconductance gFS VDS = 5 V, ID = 100 A 71 S
Gate−Resistance RG TA = 25°C 0.42
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, VDS = 50 V, f = 1 MHz
12100
Output Capacitance COSS 1170 pF
Reverse Transfer Capacitance CRSS 165
Total Gate Charge QG(TOT)
VGS = 10 V, VDS = 50 V; ID = 100 A
178
Threshold Gate Charge QG(TH) 79 nC
Gate−to−Source Charge QGS 66
Gate−to−Drain Charge QGD 43
Plateau Voltage VGP 6.0 V
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 50 V, ID = 100 A, RG = 4.7
44
Rise Time tr 41 ns
Turn−Off Delay Time td(OFF) 81
Fall Time tf 29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 100 A
TJ = 25°C 0.88 1.2
TJ = 125°C 0.77 V
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/s, IS = 50 A
74
Charge Time ta 46 ns
Discharge Time tb 29
Reverse Recovery Charge QRR 151 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
2 1
0 00 4 5
100 150 250
50
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
3
2 7 8 9 10
0 20 170 220
2
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 125
100 75 50 25 0
−25
−50 0.8 1.0 1.2 1.4
55 35
25 5
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (m)RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) IDSS, LEAKAGE (nA)
10V
7V VGS = 15V
TJ = 125°C TJ = −55°C TJ = 25°C
20 40
TJ = 25°C ID = 100 A
0 370
TJ = 25°C
VGS = 10 V
VGS = 10 V ID = 100 A
TJ = 125°C
TJ = 25°C
15 45
10 100 1K 10K RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 5
175 1.6
4
3 6
0.6
150
TJ = 85°C 3
5
TJ = 150°C
1 10
70 320
100K
0.4 1.8
4 6 35
30
5
200
8 7.5V
2 1
6
7 8
120 270
8V 8.5V
15 25
10
2.0
95 75
65 85
4 50
45
9 10 300
400 350
0 100 150 250
50 200 300 400 350
12V 9.5V 9V
6V 6.5V
5V 5.5V 4.5V
NTBGS004N10G
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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
30 40
20 60
10 0 1000 100K
100 75 50 25 00 8
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100 10
11 100 1000
0.5 0.9
250.3
Figure 11. Maximum Rated Forward Biased Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10
0.11 1 10 1000
C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns) IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C VGS = 0 V f = 1 MHz
Ciss
Coss
Crss 4
10 9
VDS = 50 V ID = 100 A TJ = 25°C
VGS = 10 V VDS = 50 V ID = 100 A
tr tf td(off)
td(on)
0.7 1.9
VGS = 0 V
TC = 25°C VGS ≤ 10 V Single Pulse
RDS(on) Limit Thermal Limit Package Limit
10 s
Qgd
100 10K
1ms
Figure 12. Maximum Drain Current vs. Time in Avalanche
tAV, TIME IN AVALANCHE (sec) 1000
IPEAK (A)
0.000001 0.01 1
50
2 6
Qgs
TJ = 25°C TJ = 125°C
TJ = −55°C 1.1 1.3
1
125
1.5
10
0.00001 10
10
250
1.7
100 s
0.0001 0.001 0.1
100
150
100 100 ms 1 sec
TJ(initial) = 150°C
TJ(initial) = 25°C 100
10 ms
175 200 70 80 90 100
TJ = 150°C TJ = 175°C 7
5
3
1
TYPICAL CHARACTERISTICS
Figure 13. Transient Thermal Impedance t, PULSE TIME (sec)
0.1 0.0001
0.0001 0.1
ZJC (°C/W)
1 0.01
0.000001 0.001
1
Single Pulse Duty Cycle = 0.5 0.2
0.1 0.05 0.02 0.01 0.01
0.00001 0.001
NTBGS004N10G
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PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD) CASE 418AY
ISSUE C
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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