NGTB30N120L2WG IGBT - Field Stop II

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• ^T

= 175 ° C

• Soft Fast Reverse Recovery Diode

• Optimized for Low V

• ¹⁰ m s Short Circuit Capability

• These are Pb−Free Devices

• Motor Drive Inverter

• Industrial Switching

• ^Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 1200 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

60 30

A

Pulsed collector current, T_pulse limited by T_Jmax, 10 ms Pulse, V_GE = 15 V

ICM 120 A

Diode forward current

@ TC = 25°C

@ TC = 100°C

IF

60 30

A

Diode pulsed current, T_pulse limited by T_Jmax

IFM 120 A

Gate−emitter voltage Transient gate−emitter voltage (T_pulse = 5 ms, D < 0.10)

VGE $20

±30

V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

534 267

W

Short Circuit Withstand Time V_GE = 15 V, V_CE = 500 V, T_J≤ 150°C

T_SC 10 ms

Operating junction temperature range

T_J −55 to +175 °C Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds

T_SLD 260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

30 A, 1200 V V

= 1.70 V

E

= 1.4 mJ

Device Package Shipping ORDERING INFORMATION

NGTB30N120L2WG TO−247 (Pb−Free)

30 Units / Rail http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM G

E C

TO−247 CASE 340AL C

G E

30N120L2 AYWWG

Thermal resistance junction−to−case, for IGBT R_qJC 0.28 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 0.85 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited

V_GE = 0 V, I_C = 500 mA V_(BR)CES 1200 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 30 A V_GE = 15 V, I_C = 30 A, T_J = 175°C

V_CEsat −

−

1.70 2.07

1.90

−

V Gate−emitter threshold voltage V_GE = V_CE, I_C = 400 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited

V_GE = 0 V, V_CE = 1200 V V_GE = 0 V, V_CE = 1200 V, T_{J =} 175°C

I_CES −

−

−

−

1.0 2

mA Gate leakage current, collector−emitter

short−circuited

V_GE = 20 V , V_CE = 0 V I_GES − − 200 nA

Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 7500 − pF

Output capacitance C_oes − 200 −

Reverse transfer capacitance C_res − 140 −

Gate charge total

V_CE = 600 V, I_C = 30 A, V_GE = 15 V

Q_g − 310 − nC

Gate to emitter charge Q_ge − 61 −

Gate to collector charge Q_gc − 150 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C V_CC = 600 V, I_C = 30 A

R_g = 10 W V_GE = 0 V/ 15V

t_d(on) − 116 − ns

Rise time t_r − 35 −

Turn−off delay time t_d(off) − 285 −

Fall time t_f − 175 −

Turn−on switching loss E_on − 4.4 − mJ

Turn−off switching loss E_off − 1.4 −

Total switching loss E_ts − 5.8 −

Turn−on delay time

T_J = 175°C V_CC = 600 V, I_C = 30 A

R_g = 10 W V_GE = 0 V/ 15V

t_d(on) − 110 − ns

Rise time t_r − 36 −

Turn−off delay time t_d(off) − 300 −

Fall time t_f − 331 −

Turn−on switching loss E_on − 5.5 − mJ

Turn−off switching loss E_off − 2.5 −

Total switching loss E_ts − 8.0 −

DIODE CHARACTERISTIC

Forward voltage V_GE = 0 V, I_F = 30 A

V_GE = 0 V, I_F = 30 A, T_J = 175°C

V_F −

−

1.50 1.40

1.70

−

V

Reverse recovery time T_J = 25°C

I_F = 30 A, V_R = 400 V di_F/dt = 200 A/ms

t_rr − 450 − ns

Reverse recovery charge Q_rr − 7.85 − mc

Reverse recovery current I_rrm − 32 − A

TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

8 6

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

10 5

0

Figure 5. V_CE(sat) vs T_J T_J, JUNCTION TEMPERATURE (°C)

175 150 125 100 75 50 25 0 3.00

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 V_GE = 20 V

to 13 V

T_J = 25°C

9 V 7 V 8 V

8 6

5 4 3 2 1 IC, COLLECTOR CURRENT (A)

7 T_J = 150°C

9 V 8 V 7 V

8 6

5 4 3 2 1 0 IC, COLLECTOR CURRENT (A)

7 T_J = −55°C

9 V

8 V T_J = 25°C

T_J = 150°C

200

V_GE = 20 V to 13 V

V_GE = 20 V to 13 V

1 2 3 4 6 7 8 9

−75 −50 −25 2.50

2.00 1.50 1.00 0.50 0.00

I_C = 60 A

I_C = 30 A I_C = 15 A

Figure 6. Typical Capacitance V_CE, COLLECTOR−EMITTER VOLTAGE (V)

90 80 50

40 30 20 10 0 100000

C, CAPACITANCE (pF)

100 C_ies

C_oes C_res

70 60 10 V

11 V

10 V 11 V

7 V

10 V 11 V

120

11 12 13

3.50

T_J = 25°C 120

120 100 80 60 40 20 0

120 100 80 60 40 20 0

10000 1000 100 10 1 100

80 60 40 20 0

0 100

80 60 40 20 0

Figure 7. Diode Forward Characteristics V_F, FORWARD VOLTAGE (V)

3.0 2.5 2.0 1.5 1.0 0.5 0 70

IF, FORWARD CURRENT (A)

T_J = 25°C

T_J = 150°C 60

50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

150 100

50 0

0 2 4 6 8 12 14 16

VGE, GATE−EMITTER VOLTAGE (V)

200 10

V_CE = 600 V

V_CE = 600 V V_GE = 15 V

I_C = 30 A

Figure 9. Switching Loss vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 V_CE = 600 V V_GE = 15 V I_C = 30 A Rg = 10 W E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0 100 1000

SWITCHING TIME (ns)

160 V_CE = 600 V V_GE = 15 V I_C = 30 A Rg = 10 W t_r

t_d(on)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A)

45 35 25 15 5 20

SWITCHING LOSS (mJ)

V_CE = 600 V V_GE = 15 V T_J = 150°C Rg = 10 W

E_off

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 100

1000

SWITCHING TIME (ns) V_CE = 600 V

V_GE = 15 V T_J = 150°C Rg = 10 W

3.5 4.0 250

E_on 6

t_f t_d(off)

10

E_on

t_r t_d(on)

t_f t_d(off)

55 65 75 85 105 15 25 35 45 55 65 75 85

5 4 3 2 1 0 7

18 16 14 12 10 8 6 4 2 0

TYPICAL CHARACTERISTICS

Figure 13. Switching Loss vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING LOSS (mJ)

V_CE = 600 V V_GE = 15 V T_J = 150°C I_C = 30 A

E_off

55 65 75 85

Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING TIME (ns)

10000

55 65 75 85

1000

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400 350

SWITCHING LOSS (mJ)

9

650 700 750 800 600

E_off

V_GE = 15 V T_J = 150°C I_C = 30 A Rg = 10 W

Figure 16. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns)

1000

100

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 1

0.01 0.1 1 10 100 1000

50 ms

100 ms 1 ms dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1 10 100 1000

V_GE = 15 V, T_C = 125°C

1000 100

10 1

E_on

t_r

t_d(on) t_f

t_d(off) V_CE = 600 V

V_GE = 15 V T_J = 150°C I_C = 30 A

100

10

E_on

V_GE = 15 V T_J = 150°C I_C = 30 A Rg = 10 W

t_r t_d(on) t_f

t_d(off)

10

10000 10000

14 12 10 8 6 4 2 0

8 7 6 5 4 3 2 1 0

550 500 450 400

350 600 650 700 750 800

140

0.01

FREQUENCY (kHz)

Ipk (A)

0.1 1 10 100 1000

Figure 19. Collector Current vs. Switching Frequency

T_C = 110°C

T_C = 80°C V_CE = 600 V, R_G = 10 W, V_GE = 0/15 V

120 100 80 60 40 20 0

Figure 20. IGBT Transient Thermal Impedance ON−PULSE WIDTH (s)

1 0.1

0.01 0.0001

1E−06 1

SQUARE−WAVE PEAK R(t) (°C/W)

1E−05 50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJA = 0.277

Junction

C₁ C₂ R₁ R₂

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

Case

C_n R_n 0.1

0.01

0.001

0.0001

0.001

R_i (°C/W) C_i (J/°C) 0.048747 0.006487 0.043252 0.051703 0.107932 0.025253

0.023120 0.061163 0.092651 1.252250

ON−PULSE WIDTH (s)

SQUARE−WAVE PEAK R(t) (°C/W) 50% Duty Cycle

20%

10%

5%

2%

Single Pulse 0.01

0.1 1

R_qJC = 0.848

Junction Case

C₁ C₂

R₁ R₂ R_n

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

1 0.1

0.01 0.0001

1E−06 1E−05 0.001

R_i (°C/W) C_i (J/°C) 0.000058 0.017247 0.000213 0.022447 0.026328 0.063916 0.118778 0.075016 0.061573 0.145707 0.254415 0.062512

0.014848 0.000446 0.001201 0.001565 0.002662 0.013330 0.051358 0.068631 0.124296 1.608971

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

PACKAGE DIMENSIONS

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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