Power MOSFET
40 V, 3.7 m W , 123 A, Single N−Channel DPAK
Features
• Low R
DS(on)to Minimize Conduction Losses
• MSL 1 @ 260°C
• 100% Avalanche Tested
• AEC Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS "20 V
Continuous Drain Cur- rent (RqJC) (Notes 1 &
3)
Steady State
TC = 25°C ID 123 A
TC = 85°C 95
Power Dissipation
(RqJC) (Note 1) TC = 25°C PD 107 W
Continuous Drain Cur- rent (RqJA) (Notes 1, 2, 3)
TA = 25°C ID 24 A
TA = 85°C 18.5
Power Dissipation
(RqJA) (Notes 1 & 2) TA = 25°C PD 4.0 W Pulsed Drain Current tp=10ms TA = 25°C IDM 400 A Current Limited by Package
(Note 3) TA = 25°C IDmaxPkg 100 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
175 °C
Source Current (Body Diode) IS 100 A
Single Pulse Drain−to−Source Avalanche Energy (VGS = 10 V, L = 0.3 mH, IL(pk) = 46.2 A, RG = 25 W)
EAS 320 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
CASE 369C DPAK (Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT http://onsemi.com
1 23 4
N−Channel D
S G
Gate1 Drain 32
Source Drain4
YWW 58 90NLG
V(BR)DSS RDS(ON) MAX ID MAX 40 V 3.7 mW @ 10 V
123 A 5.5 mW @ 4.5 V
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THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 1.4 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 37
ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/TJ 40 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V
TJ = 25°C 1.0 mA
TJ = 150°C 100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V
Negative Threshold Temperature
Coefficient VGS(TH)/TJ 7.4 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 2.9 3.7 mW
VGS = 4.5 V, ID = 50 A 4.4 5.5
Forward Transconductance gFS VDS = 15 V, ID = 15 A 16.3 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
4760 pF
Output Capacitance Coss 580
Reverse Transfer Capacitance Crss 385
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V,
ID = 50 A 84 nC
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V, ID = 50 A
42 nC
Threshold Gate Charge QG(TH) 4.2
Gate−to−Source Charge QGS 13.7
Gate−to−Drain Charge QGD 18.8
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(on)
VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.0 W
12 ns
Rise Time tr 35
Turn−Off Delay Time td(off) 38
Fall Time tf 11
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A TJ = 25°C 0.86 1.2 V
VGS = 0 V,
IS = 20 A TJ = 25°C 0.78 1.0
Reverse Recovery Time tRR
VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A
35 ns
Charge Time ta 19
Discharge Time tb 16
Reverse Recovery Charge QRR 34 nC
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TYPICAL PERFORMANCE CURVES
0 50 100 150 200 250
0.0 1.0 2.0 3.0 4.0 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics TJ = 25°C VGS = 4.4 V
4 V
3.6 V
3.2 V 4.8 V
10 V
50 100 150 200 250
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (A) TJ = 25°C
TJ = −55°C TJ = 125°C
0.000 0.002 0.004 0.006 0.008 0.010
2 4 6 8 10
Figure 3. On−Resistance vs. Gate−to−Source Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = 50 A TJ = 25°C
3 5 7 9
VDS ≥ 10 V
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0 0.008
0.006
0.004
0.002
0.001
40 80 120 160 200 240 280
VGS = 4.5 V TJ = 25°C
VGS = 10 V
Figure 5. On−Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
ID = 50 A VGS = 10 V 2.0
−50 1.5
1.0
0.5 −25 0 25 50 75 100 125 150 175
Figure 6. Drain−to−Source Leakage Current vs. Drain Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
VGS = 0 V
TJ = 150°C
TJ = 125°C 100000
5 10000
1000 10 15 20 25 30 35 40
TYPICAL PERFORMANCE CURVES
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation Coss
Ciss
7000
10 20 30 40
VGS = 0 V TJ = 25°C 6000
5000 4000 3000 2000 1000
0 Crss
Figure 8. Gate−To−Source Voltage vs.
Total Charge QG, TOTAL GATE CHARGE (nC)
VDS = 15 V ID = 50 A TJ = 25°C Qgd
Qgs
QT
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
10
10 70 80 90
0 8 6
4 2
0 20 30 40 50 60
10 100 1000
1 10 100
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
tr
td(off) td(on)
tf VDD = 20 V
ID = 50 A VGS = 10 V
0 25 50 75 100
0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current
IS, SOURCE CURRENT (A)
VGS = 0 V TJ = 25°C
(AMPS)
100 ms 10 ms 100
1000
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TYPICAL PERFORMANCE CURVES
Figure 12. Thermal Response t, TIME (s)
0.1 10
0.001 0.1 0.2
0.02 D = 0.5
0.05
0.01 SINGLE PULSE
0.01 1000
0.001 0.0001
0.00001 0.000001
1.0
0.1 1 10 100
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
RqJC = 1.4°C/W Steady State 0.01
ORDERING INFORMATION
Order Number Package Shipping†
NVD5890NLT4G DPAK
(Pb−Free) 2500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
DPAK (SINGLE GAUGE) CASE 369C
ISSUE F
DATE 21 JUL 2015 SCALE 1:1
STYLE 1:
PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
STYLE 2:
PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
STYLE 3:
PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE
STYLE 4:
PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE
STYLE 5:
PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 6:
PIN 1. MT1 2. MT2 3. GATE 4. MT2
STYLE 7:
PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
1 2 3 4
STYLE 8:
PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE
STYLE 9:
PIN 1. ANODE 2. CATHODE 3. RESISTOR ADJUST 4. CATHODE
STYLE 10:
PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE
b D E
b3
L3
L4 b2
0.005 (0.13)M C
c2 A
c
C
Z
DIM MIN MAX MIN MAX MILLIMETERS INCHES
D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01 L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
7. OPTIONAL MOLD FEATURE.
1 2 3
4
XXXXXX = Device Code A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package AYWW XXX XXXXXG XXXXXXG
ALYWW
Discrete IC
5.80 0.228
2.58 0.102
1.60 0.063 6.20
0.244
3.00 0.118
6.17 0.243
GENERIC MARKING DIAGRAM*
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING PLANE
A
B
C
L1 L
H L2GAUGEPLANE
DETAIL A
ROTATED 90 CW5
e BOTTOM VIEW
Z
BOTTOM VIEW SIDE VIEW
TOP VIEW
ALTERNATE CONSTRUCTIONS NOTE 7
Z
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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