MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor

(1)

High Speed, High Gain Bipolar NPN Power Transistor

with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network

The MJE18004D2 is state−of−art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( ± 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h FE window.

It’s characteristics make it also suitable for PFC application.

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ I _C = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (T _J = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V CEO 450 Vdc Collector−Base Breakdown Voltage V CBO 1000 Vdc Collector−Emitter Breakdown Voltage V CES 1000 Vdc

Emitter−Base Voltage V _EBO 12 Vdc

Collector Current − Continuous

Collector Current − Peak (Note 1) I C

I _CM 5

10 Adc

Base Current − Continuous

Base Current − Peak (Note 1) I _B

I _BM 2

4 Adc

Total Device Dissipation @ T C = 25_C

Derate above 25°C P D 75

0.6 W

W/°C Operating and Storage Temperature T _J , T _stg –65 to 150 °C THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case R _qJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient R _qJA 62.5 _C/W Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds T L 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS

TO−220AB CASE 221A STYLE 1 1 2 3

4 http://onsemi.com

18004D2 = Device Code G = Pb−Free Package A = Assembly Location

Y = Year

WW = Work Week

MARKING DIAGRAM

18004D2G AYWW

Device Package Shipping ^† ORDERING INFORMATION

MJE18004D2G TO−220AB

(Pb−Free) 50 Units / Rail

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

(2)

ELECTRICAL CHARACTERISTICS (T _C = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

^ÎÎÎÎ

ÎÎÎÎ

Symbol

^ÎÎÎ

ÎÎÎ

Min

^ÎÎÎÎ

ÎÎÎÎ

Typ

^ÎÎÎ

ÎÎÎ

Max

^ÎÎÎ

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I _C = 100 mA, L = 25 mH)

^ÎÎÎÎ

ÎÎÎÎ

V _CEO(sus)

^ÎÎÎ

ÎÎÎ

450

^ÎÎÎÎ

ÎÎÎÎ

547

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

Vdc

Collector−Base Breakdown Voltage (I _CBO = 1 mA)

^ÎÎÎÎ

ÎÎÎÎ

V _CBO

^ÎÎÎ

ÎÎÎ

1000

^ÎÎÎÎ

ÎÎÎÎ

1100

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

Vdc

Emitter−Base Breakdown Voltage (I _EBO = 1 mA)

^ÎÎÎÎ

ÎÎÎÎ

V _EBO

^ÎÎÎ

ÎÎÎ

12

^ÎÎÎÎ

ÎÎÎÎ

14

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current (V _CE = Rated V _CEO , I _B = 0)

^ÎÎÎÎ

ÎÎÎÎ

I _CEO

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

−

^ÎÎÎ

ÎÎÎ

100

^ÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (V _CE = Rated V _CES , V _EB = 0) Collector Cutoff Current (V CE = 500 V, V EB = 0)

ÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎÎ

I _CES

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

−

^ÎÎÎ

ÎÎÎ

100 500 100

ÎÎÎ

mAdc

Emitter−Cutoff Current (V _EB = 10 Vdc, I _C = 0)

ÎÎÎÎ

I _EBO

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

100

ÎÎÎ

m Adc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (I C = 0.8 Adc, I B = 80 mAdc)

ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125 ° C

ÎÎÎÎ

V _BE(sat)

^ÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

0.8 0.7

ÎÎÎ

0.9 1

ÎÎÎ

Vdc

(I _C = 2 Adc, I _B = 0.4 Adc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.9 0.8

ÎÎÎ

0.9 1

Collector−Emitter Saturation Voltage (I _C = 0.8 Adc, I _B = 80 mAdc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎÎ

V CE(sat)

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.38 0.55

ÎÎÎ

0.75 0.5

ÎÎÎ

Vdc

(I C = 2 Adc, I B = 0.4 Adc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.45 0.75

ÎÎÎ

0.75 1

(I C = 0.8 Adc, I B = 40 mAdc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.9 1.6

ÎÎÎ

1.5 (I C = 1 Adc, I B = 0.2 Adc)

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.25 0.28

ÎÎÎ

0.5 0.6

DC Current Gain (I C = 0.8 Adc, V CE = 1 Vdc)

ÎÎÎÎÎ ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

^ÎÎÎÎ

ÎÎÎÎ

h _FE

ÎÎÎ

15 10

^ÎÎÎÎ

ÎÎÎÎ

28 14

^ÎÎÎ

ÎÎÎ

−

ÎÎÎ

−

(I _C = 2 Adc, V _CE = 1 Vdc)

ÎÎÎÎÎ

@ T _C = 25°C

@ T C = 125°C

ÎÎÎ

6 4

ÎÎÎÎ

8 6

ÎÎÎ

−

(I _C = 1 Adc, V _CE = 2.5 Vdc)

ÎÎÎÎÎ

@ T _C = 25°C

@ T C = 125°C

ÎÎÎ

18 14

ÎÎÎÎ

28 20

ÎÎÎ

−

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎÎÎ

Dynamic Saturation Voltage:

Determined 1 ms and 3 ms respectively after rising I _B1 reaches 90% of final I B1

ÎÎÎÎÎ

I _C = 1 Adc I B1 = 100 mA

V _CC = 300 V

ÎÎÎÎ

@ 1 ms

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T _C = 25 ° C

@ T C = 125°C

ÎÎÎÎ

V _CE(dsat)

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

16 9

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

V

ÎÎÎÎ

@ 3 ms

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

3.1 9

ÎÎÎ

−

ÎÎÎÎÎ

I _C = 2 Adc I _B1 = 0.4 A V CC = 300 V

ÎÎÎÎ

@ 1 m s

ÎÎÎÎÎ

@ T _C = 25°C

@ T C = 125°C

ÎÎÎ

−

ÎÎÎÎ

18 11

ÎÎÎ

−

ÎÎÎÎ

@ 3 ms

^ÎÎÎÎÎ

ÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

1.4 8

ÎÎÎ

−

(3)

ELECTRICAL CHARACTERISTICS (T _C = 25°C unless otherwise noted)

Characteristic

^ÎÎÎÎ

ÎÎÎÎ

Symbol

^ÎÎÎ

ÎÎÎ

Min

^ÎÎÎÎ

ÎÎÎÎ

Typ

^ÎÎÎ

ÎÎÎ

Max

^ÎÎÎ

ÎÎÎ

Unit

DIODE CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Diode Voltage (I _EC = 1 Adc)

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T C = 125°C

ÎÎÎÎ

V _EC

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

0.96 0.72

ÎÎÎ

1.5

^ÎÎÎ

ÎÎÎ

V

(I EC = 2 Adc)

ÎÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125°C

^ÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

1.15 0.8

^ÎÎÎ

ÎÎÎ

1.7 Forward Recovery Time (I _F = 0.4 Adc, di/dt = 10 A/ms)

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25°C

^ÎÎÎÎ

ÎÎÎÎ

t _fr

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

440

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

ns

(I _F = 1 Adc, di/dt = 10 A/ms)

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25°C

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

335

^ÎÎÎ

ÎÎÎ

−

(I _F = 2 Adc, di/dt = 10 A/ m s)

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25°C

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

335

^ÎÎÎ

ÎÎÎ

−

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I _C = 0.5 Adc, V _CE = 10 Vdc, f = 1 MHz)

^ÎÎÎÎ

ÎÎÎÎ

f _T

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

13

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎ

ÎÎÎ

MHz

Output Capacitance (V _CB = 10 Vdc, I _E = 0, f = 1 MHz)

^ÎÎÎÎ

ÎÎÎÎ

C _ob

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

60

^ÎÎÎ

ÎÎÎ

100

^ÎÎÎ

ÎÎÎ

pF

Input Capacitance (I _C = 0.5 Adc, V _CE = 10 Vdc, f = 1 MHz)

^ÎÎÎÎ

ÎÎÎÎ

C _ib

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

450

^ÎÎÎ

ÎÎÎ

750

^ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)

ÎÎÎÎÎÎÎÎÎ

Turn−on Time

^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

I C = 2.5 Adc, I B1 = 0.5 Adc I B2 = 1 Adc V _CC = 250 Vdc

ÎÎÎÎÎÎ

@ T C = 25°C

^ÎÎÎÎ

ÎÎÎÎ

t on

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

500

^ÎÎÎ

ÎÎÎ

750

^ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Turn−off Time

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T C = 25°C

^ÎÎÎÎ

ÎÎÎÎ

t off

ÎÎÎ

1.1

^ÎÎÎÎ

ÎÎÎÎ

−

^ÎÎÎ

ÎÎÎ

1.4

^ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎ

Turn−on Time

^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

I _C = 2 Adc, I _B1 = 0.4 Adc I _B2 = 1 Adc V _CC = 300 Vdc

ÎÎÎÎÎÎ

@ T C = 25°C

@ T C = 125°C

ÎÎÎÎ

t on

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

100 150

ÎÎÎ

150

^ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Turn−off Time

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25 ° C

@ T _C = 125 ° C

ÎÎÎÎ

t _off

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

1.15 1.6

ÎÎÎ

1.3

^ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎ

I _C = 2.5 Adc, I _B1 = 0.5 Adc I _B2 = 0.5 Adc V _CC = 300 Vdc

ÎÎÎÎÎÎ

@ T _C = 25 ° C

@ T _C = 125°C

^ÎÎÎÎ

ÎÎÎÎ

t _on

ÎÎÎ

−

ÎÎÎÎ

120

500

^ÎÎÎ

ÎÎÎ

150

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Turn−off Time

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎÎ

t _off

ÎÎÎ

1.85

ÎÎÎÎ

− 2.6

ÎÎÎ

2.15

ÎÎÎ

m s

SWITCHING CHARACTERISTICS: Inductive Load (V _CC = 15 V)

ÎÎÎÎÎÎÎÎÎ

Fall Time

^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

I _C = 2.5 Adc I _B1 = 500 mAdc I _B2 = 500 mAdc V _Z = 350 V L _C = 300 m H

ÎÎÎÎÎÎ

@ T _C = 25 ° C

@ T _C = 125°C

ÎÎÎÎ

t _f

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

130 300

ÎÎÎ

175

^ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

^ÎÎÎÎ

ÎÎÎÎ

t _s

ÎÎÎ

−

ÎÎÎÎ

2.12

2.6

^ÎÎÎ

ÎÎÎ

2.4

ÎÎÎ

m s

ÎÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎÎ

t _c

ÎÎÎ

−

ÎÎÎÎ

355 750

ÎÎÎ

500

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Fall Time

^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

I _C = 2 Adc I _B1 = 400 mAdc I _B2 = 400 mAdc V _Z = 300 V L _C = 200 mH

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T _C = 125°C

ÎÎÎÎ

t _f

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

95 230

ÎÎÎ

150

^ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Storage Time

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T _C = 25°C

@ T C = 125°C

ÎÎÎÎ

t _s

^ÎÎÎ

ÎÎÎ

2.1

^ÎÎÎÎ

ÎÎÎÎ

2.9

ÎÎÎ

2.4

^ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ T C = 25°C

@ T C = 125°C

ÎÎÎÎ

t c

ÎÎÎ

−

ÎÎÎÎ

300 700

ÎÎÎ

450

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Fall Time

^{ÎÎÎÎÎÎÎÎ}

ÎÎÎÎÎÎÎÎ

I C = 1 Adc I B1 = 100 mAdc I B2 = 500 mAdc V Z = 300 V L C = 200 mH

ÎÎÎÎÎÎ

@ T C = 25°C

@ T C = 125°C

ÎÎÎÎ

t f

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

70 100

ÎÎÎ

90

^ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎ

Storage Time

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ T C = 25°C

@ T _C = 125 ° C

ÎÎÎÎ

t s

^ÎÎÎ

ÎÎÎ

−

^ÎÎÎÎ

ÎÎÎÎ

1.05 0.7

ÎÎÎ

0.9

^ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ T _C = 25 ° C

@ T _C = 125°C

^ÎÎÎÎ

ÎÎÎÎ

t _c

ÎÎÎ

−

ÎÎÎÎ

75

160

^ÎÎÎ

ÎÎÎ

120

ÎÎÎ

ns

(4)

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt 100

10

1 10 1

0.1 0.01

0.001 I _C , COLLECTOR CURRENT (AMPS)

h FE , DC CURRENT GAIN

T _J = 125 ° C T _J = 25 ° C

T _J = -20 ° C

V _CE = 1 V

Figure 2. DC Current Gain @ 5 Volt 100

10

1 10 1

0.1 0.01

0.001 I _C , COLLECTOR CURRENT (AMPS)

h FE , DC CURRENT GAIN

T _J = 125 ° C

T _J = -20 ° C

V _CE = 5 V

Figure 3. Collector Saturation Region 3

2

0 10 1

0.1 0.01

I _B , BASE CURRENT (mA) I _C = 500 mA

Figure 4. Collector−Emitter Saturation Voltage

10

1

0.1 10 1

0.1 0.01

0.001 I _C , COLLECTOR CURRENT (AMPS) T _J = 125 ° C

T _J = 25 ° C

T _J = -20 ° C I _C /I _B = 5

V CE , VOL TAGE (VOL TS) V CE , VOL TAGE (VOL TS)

1 T _J = 25 ° C

1 A

5 A

Figure 5. Collector−Emitter Saturation Voltage

10

1

0.1 10 0.1

0.01 0.001

I _C , COLLECTOR CURRENT (AMPS)

Figure 6. Collector−Emitter Saturation Voltage

10

1

0.1 10 0.1

0.01 0.001

I _C , COLLECTOR CURRENT (AMPS) T _J = 125 ° C

T _J = -20 ° C

V CE , VOL TAGE (VOL TS) V CE , VOL TAGE (VOL TS)

1 I _C /I _B = 10 T _J = 125 ° C

T _J = -20 ° C

I _C /I _B = 20 4 A

3 A 2 A

T _J = 25 ° C

1

(5)

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base−Emitter Saturation Region 10

1

0.1 10 0.1

0.01 0.001

I _C , COLLECTOR CURRENT (AMPS)

Figure 8. Base−Emitter Saturation Region 10

1

0.1 10 0.1

0.01 0.001

I _C , COLLECTOR CURRENT (AMPS) T _J = 125 ° C

T _J = -20 ° C

V BE , VOL TAGE (VOL TS) V BE , VOL TAGE (VOL TS)

1 T _J = 125 ° C T _J = 25 ° C T _J = -20 ° C

I _C /I _B = 10

1 I _C /I _B = 5

Figure 9. Base−Emitter Saturation Region 10

1

0.1 10 0.1

0.01 0.001

I _C , COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage 10

1

0.1 10 0.1

0.01 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 125 ° C

25 ° C

V BE , VOL TAGE (VOL TS) FOR W ARD DIODE VOL TAGE (VOL TS)

T _J = 125 ° C T _J = -20 ° C

1 I _C /I _B = 20

Figure 11. Capacitance 1000

10 100 10

1 V _R , REVERSE VOLTAGE (VOLTS)

C, CAP ACIT ANCE (pF)

100 C _ib (pF)

C _ob T _J = 25 ° C f _(test) = 1 MHz

Figure 12. BVCER = f(R _BE ) 1200

600 1000 100

10 BASE-EMITTER RESISTOR ( W )

COLLECT OR EMITTER VOL TAGE (VOL TS) T _C = 25 ° C

BVCER @ ICER = 10 mA 1000

800 BVCER(sus) @ ICER = 200 mA, Lc = 25 mH 1

T _J = 25 ° C

(6)

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Resistive Switch Time, t _on 3200

0 2 4 1

I _C , COLLECTOR CURRENT (AMPS) 3

t, TIME (ns)

2400

1600

800 T _J = 125 ° C T _J = 25 ° C

I _C /I _B = 10

I _C /I _B = 5 I _Bon = I _Boff

V _CC = 300 V PW = 20 m s

Figure 14. Resistive Switch Time, t _off 5

2

0 4 3

1 I _C , COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time, t _si @ I _C /I _B = 5

4

2

0 4 1

0 I _C , COLLECTOR CURRENT (AMPS) 3 3

1

3 t, TIME (s) μ

t, TIME (s) μ

4 1 T _J = 125 ° C T _J = 25 ° C

I _C /I _B = 10

I _C /I _B = 5

I _Bon = I _Boff V _CC = 300 V PW = 20 m s

2 T _J = 125 ° C T _J = 25 ° C

I _Bon = I _Boff V _CC = 15 V V _Z = 300 V L _C = 200 m H

Figure 16. Inductive Storage Time, t _si @ I _C /I _B = 10

2 I _C /I _B = 5

4

2

0 4 1

0 I _C , COLLECTOR CURRENT (AMPS) 3 3

1 t, TIME (s) μ

2 T _J = 125 ° C T _J = 25 ° C

I _Bon = I _Boff V _CC = 15 V V _Z = 300 V L _C = 200 m H I _C /I _B = 10

Figure 17. Inductive Switching Time, t _c and t _fi @ I _C /I _B = 5

1000

0 4 1

0 I _C , COLLECTOR CURRENT (AMPS) 3

t, TIME (ns)

800

600

200 T _J = 125 ° C T _J = 25 ° C

400 2 I _Bon = I _Boff

V _CC = 15 V V _Z = 300 V L _C = 200 m H

I _C /I _B = 5

Figure 18. Inductive Switching Time, t _fi @ I _C /I _B = 10

1000

0 4 1

0 I _C , COLLECTOR CURRENT (AMPS) 3

t, TIME (ns)

800

600

200 T _J = 125 ° C T _J = 25 ° C

400 2 I _Boff = I _Bon

V _CC = 15 V V _Z = 300 V L _C = 200 m H

I _C /I _B = 10

t _c

t _fi

(7)

, ST ORAGE TIME ( t si

μ s)

TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Inductive Switching, t _c @ I _C /I _B = 10 1600

800

0 4 2

0 I _C , COLLECTOR CURRENT (AMPS)

t, TIME (ns)

1200

T _J = 125 ° C T _J = 25 ° C 400

1 3

I _C /I _B = 10 I _Boff = I _Bon

V _CC = 15 V V _Z = 300 V L _C = 200 m H

Figure 20. Inductive Storage Time 5

2 20 0

h _FE , FORCED GAIN 4

3 5 10 15

T _J = 125 ° C T _J = 25 ° C

I _C = 2 A I _Bon = I _Boff V _CC = 15 V V _Z = 300 V L _C = 200 m H

I _C = 1 A

Figure 21. Inductive Fall Time 1000

0 20 8

2 h _FE , FORCED GAIN

Figure 22. Inductive Crossover Time 2000

500

0 20 8

2 h _FE , FORCED GAIN 1500

1000 600

t fi , F ALL TIME (ns)

t c , CROSSOVER TIME (ns)

800

400

200 4 6 10 12

T _J = 125 ° C T _J = 25 ° C I _Boff = I _Bon

V _CC = 15 V V _Z = 300 V L _C = 200 m H

14 I _Bon = I _Boff

V _CC = 15 V V _Z = 300 V L _C = 200 m H

T _J = 125 ° C T _J = 25 ° C

14 16 18

I _C = 1 A I _C = 2 A

I _C = 2 A

I _C = 1 A

Figure 23. Inductive Storage Time, t _si 4

2

1 4 0.5

I _C , COLLECTOR CURRENT (AMPS) 1.5

1 I _Bon = I _Boff V _CC = 15 V V _Z = 300 V L _C = 200 m H 3

t, TIME (s) μ

2 2.5 3 3.5

I _B = 50 mA

I _B = 100 mA I _B = 200 mA

I _B = 500 mA I _B = 1 A

Figure 24. Forward Recovery Time, T _FR 420

300 2 1

0.5 0

I _F , FORWARD CURRENT (AMP)

dI/dt = 10 A/ m s T _C = 25 ° C

1.5 t fr

, FOR W ARD RECOVER Y TIME (ns)

380

340

(8)

10

4

0 8 2

0 6

8

6

2 4 9

7

5

3

1 1 3 5 7

I _B I _C

V _clamp

t _si

t _c t _fi 90% I _C

10% I _C

90% I _B1 10% V _clamp V _CE

0 V

I _B

90% I _B 1 m s

3 m s dyn 1 m s

dyn 3 m s

Figure 25. Dynamic Saturation Voltage Measurements TIME

VOL TS

Figure 26. Inductive Switching Measurements TYPICAL SWITCHING CHARACTERISTICS

Figure 27. t _fr Measurements 0

10 6

0 V _F

I _F

2 4 8

V _FR (1.1 V _F unless otherwise specified) V _FRM

t _fr V _F

0.1 V _F

10% I _F

TIME

Table 1. Inductive Load Switching Drive Circuit V (BR)CEO(sus)

L = 10 mH RB2 = ∞ V _CC = 20 V I _C(pk) = 100 mA

Inductive Switching L = 200 m H RB2 = 0 V _CC = 15 V RB1 selected for desired Ib1

RBSOA L = 500 m H RB2 = 0 V _CC = 15 V RB1 selected for desired Ib1 +15 V

1 m F

150 W 3 W

100 W 3 W MPF930

+10 V

50 W COMMON

-V _off

500 m F MPF930

MTP8P10

MUR105

MJE210

MTP12N10 MTP8P10

150 W 3 W

100 m F

I _out A

1 m F R _B2 R _B1

I _C PEAK V _CE PEAK

V _CE

I _B I _B 1

I _B 2

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TYPICAL CHARACTERISTICS

Figure 28. Forward Bias Safe Operating Area 100

0.01 1000 10

V _CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area 6

2

0 1000 200

V _CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4

100 600

1

0.1 I C , COLLECT OR CURRENT (AMPS)

I C , COLLECT OR CURRENT (AMPS)

DC 5 ms

1 ms 10 m s 1 m s

EXTENDED

SOA 3

1 0 V -1.5

V - 5 V

T _C ≤ 125 ° C GAIN ≥ 5 L _C = 2 mH 10

5 400 800

POWER DERA TING F ACT OR

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

Safe operating area curves indicate I _C −V _CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on T _C = 25 ° C; T _J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T _C > 25 ° C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30.

T J (pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse biased. The safe level is specified as a reverse−biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

T _C , CASE TEMPERATURE ( ° C) 1.0

0.8 0.6 0.4

0.2 0

160 140 120 100 80 60 40 20

SECOND BREAKDOWN

DERATING

THERMAL DERATING

Figure 31. Typical Thermal Response (Z _qJC(t) ) for MJE18004D2 TYPICAL THERMAL RESPONSE

1

0.01 10 0.1

0.01 t, TIME (ms) 0.1

1 100 1000

r(t) , TRANSIENT THERMAL RESIST ANCE (NORMALIZED)

R _qJC (t) = r(t) R _qJC R _qJC = 2.5 ° C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t ₁ T _J(pk) - T _C = P _(pk) R _qJC (t) P _(pk)

t ₁ t ₂

DUTY CYCLE, D = t ₁ /t ₂ 0.05

SINGLE PULSE 0.5

0.2 0.1

0.02

(10)

TO−220 CASE 221A

ISSUE AK

DATE 13 JAN 2022

SCALE 1:1

STYLE 1:

PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

STYLE 2:

PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER

STYLE 3:

PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE

STYLE 4:

PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 7:

PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE STYLE 10:

PIN 1. GATE 2. SOURCE 3. DRAIN 4. SOURCE STYLE 5:

PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

STYLE 8:

PIN 1. CATHODE 2. ANODE

3. EXTERNAL TRIP/DELAY 4. ANODE

STYLE 6:

PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 9:

PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

STYLE 11:

PIN 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE

STYLE 12:

PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED

98ASB42148B DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−220

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the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

(11)

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor

High Speed, High Gain Bipolar NPN Power Transistor

with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network

The MJE18004D2 is state−of−art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( ± 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h FE window.

It’s characteristics make it also suitable for PFC application.

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ I C = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (T J = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V CEO 450 Vdc Collector−Base Breakdown Voltage V CBO 1000 Vdc Collector−Emitter Breakdown Voltage V CES 1000 Vdc

Emitter−Base Voltage V EBO 12 Vdc

Collector Current − Continuous

Collector Current − Peak (Note 1) I C

I CM 5

10 Adc

Base Current − Continuous

Base Current − Peak (Note 1) I B

I BM 2

4 Adc

Total Device Dissipation @ T C = 25_C

Derate above 25°C P D 75

0.6 W

W/°C Operating and Storage Temperature T J , T stg –65 to 150 °C THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case R qJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient R qJA 62.5 _C/W Maximum Lead Temperature for Soldering

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS

TO−220AB CASE 221A STYLE 1 1 2 3

4

http://onsemi.com

18004D2 = Device Code G = Pb−Free Package A = Assembly Location

Y = Year

WW = Work Week

MARKING DIAGRAM

18004D2G AYWW

Device Package Shipping † ORDERING INFORMATION

MJE18004D2G TO−220AB

(Pb−Free) 50 Units / Rail

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I C = 100 mA, L = 25 mH)

V CEO(sus)

450

547

−

Vdc

Collector−Base Breakdown Voltage (I CBO = 1 mA)

V CBO

1000

1100

−

Vdc

Emitter−Base Breakdown Voltage (I EBO = 1 mA)

V EBO

12

14

−

Vdc

Collector Cutoff Current (V CE = Rated V CEO , I B = 0)

I CEO

−

−

100

mAdc

Collector Cutoff Current (V CE = Rated V CES , V EB = 0) Collector Cutoff Current (V CE = 500 V, V EB = 0)

• High Peak DC Current Gain (55 Typical) @ I _C = 100 mA

MAXIMUM RATINGS (T _J = 25°C unless otherwise noted)

Emitter−Base Voltage V _EBO 12 Vdc

I _CM 5

Base Current − Peak (Note 1) I _B

I _BM 2

W/°C Operating and Storage Temperature T _J , T _stg –65 to 150 °C THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case R _qJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient R _qJA 62.5 _C/W Maximum Lead Temperature for Soldering

Device Package Shipping ^† ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (T _C = 25°C unless otherwise noted)

Collector−Emitter Sustaining Voltage (I _C = 100 mA, L = 25 mH)

V _CEO(sus)

Collector−Base Breakdown Voltage (I _CBO = 1 mA)

V _CBO

Emitter−Base Breakdown Voltage (I _EBO = 1 mA)

V _EBO

Collector Cutoff Current (V _CE = Rated V _CEO , I _B = 0)

I _CEO

Collector Cutoff Current (V _CE = Rated V _CES , V _EB = 0) Collector Cutoff Current (V CE = 500 V, V EB = 0)

@ T _C = 25°C

@ T _C = 125°C

@ T _C = 125°C

I _CES

Emitter−Cutoff Current (V _EB = 10 Vdc, I _C = 0)

I _EBO

@ T _C = 125 ° C

V _BE(sat)

(I _C = 2 Adc, I _B = 0.4 Adc)

@ T _C = 25°C

@ T _C = 125°C

Collector−Emitter Saturation Voltage (I _C = 0.8 Adc, I _B = 80 mAdc)

@ T _C = 25°C

@ T _C = 125°C

@ T _C = 125°C

@ T _C = 125°C

@ T _C = 125°C

@ T _C = 125°C

h _FE

(I _C = 2 Adc, V _CE = 1 Vdc)

@ T _C = 25°C