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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Power MOSFET
40 V, 0.42 m W , 554.5 A, Single N−Channel
Features
• Small Footprint (8x8 mm) for Compact Design
• Low R
DS(on)to Minimize Conduction Losses
• Low Q
Gand Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC (Note 2) Steady
State TC = 25°C ID 554.5 A
TC = 100°C 392.1
Power Dissipation
RqJC (Note 2) Steady
State TC = 25°C PD 245.4 W
TC = 100°C 122.7
Continuous Drain Current RqJA (Notes 1, 2)
Steady
State TA = 25°C ID 78.9 A
TA = 100°C 55.8
Power Dissipation
RqJA (Notes 1, 2) Steady
State TA = 25°C PD 5.0 W
TA = 100°C 2.5
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature
Range TJ, Tstg −55 to
+175 °C
Source Current (Body Diode) IS 204.5 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 52.7 A) EAS 2058 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 2) RqJC 0.61 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 30.2 1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
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ORDERING INFORMATION V(BR)DSS RDS(ON) MAX ID MAX
40 V 0.42 mW @ 10 V
554.5 A 0.66 mW @ 4.5 V
G (1)
S (2−4) N−CHANNEL MOSFET
D (5−8)
POWER 88 CASE 507AP MARKING DIAGRAM
XXXXXXXX AWLYWW
XXX = Device Code (8 A−N characters max) A = Assembly Location WL = 2−digit Wafer Lot Code Y = Year Code
WW = Work Week Code
NTMTS0D6N04CL
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ ID = 250 mA, ref to 25°C 12.6 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 40 V TJ = 25°C 10
TJ = 125°C 250 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 2.0 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ ID = 250 mA, ref to 25°C −6.0 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 0.35 0.42
VGS = 4.5 V ID = 50 A 0.52 0.66 mW
Forward Transconductance gFS VDS =5 V, ID = 50 A 323 S
Gate Resistance RG TA = 25°C 1.0 W
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 20 V
16013
Output Capacitance COSS 6801 pF
Reverse Transfer Capacitance CRSS 299
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
126
Threshold Gate Charge QG(TH) 22.5 nC
Gate−to−Source Charge QGS 39.9
Gate−to−Drain Charge QGD 38.4
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 265 nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 6 W
89.4
Rise Time tr 111 ns
Turn−Off Delay Time td(OFF) 180
Fall Time tf 84.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A
TJ = 25°C 0.75 1.2
TJ = 125°C 0.6 V
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A
99.3
Charge Time ta 62.4 ns
Discharge Time tb 36.9
Reverse Recovery Charge QRR 228 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 0 0.25
200 600 1000
2 1
00 400 600
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9 8 7 0 6
260 110
10
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 145
105 65
−15 0−55 2.0
40 35 30 25 10
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS, LEAKAGE CURRENT (nA)
TJ = 125°C TJ = 25°C
TJ = −55°C
TJ = 25°C ID = 50 A
VGS = 10 V
VGS = 10 V ID = 50 A
25
TJ = 85°C 2.00
12
4
5 15
3 5
VGS = 4.6 V to 10 V
3.0 V 0.75
TJ = 25°C 1E+06
1.0
300 300
2 8
1.50 100
500 800
500
VDS = 10 V
210 0.6
1.0 1.4
5 6
10
0.2 0.4 0.8 1.2 1.6 1.8
10
TJ = 150°C TJ = 125°C
1E+03 1E+02 1E+01 1E+00 0 0.2 0.4 0.8 1.2
TJ = 25°C 0
4.2 V
1
20 1E+04
1E+05 1.00
400 700
100 200
60 160
0.6 1.4
VGS = 4.5 V
4 3 2
0.50 1.25 1.75
900
800 1000
700 900
4 4.0 V
3.2 V 3.4 V 3.6 V
NTMTS0D6N04CL
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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
100 00 40 80
2 4 6 5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
50 30
1E−082 1E−05
0.5
0.4 1.1
0.3 0.2 0.1 0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
1000 10
1 0.10.1
10 100 1000
100
C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)
t, SWITCHING TIME (ns) IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT(A) IPEAK (A)
VGS = 0 V TJ = 25°C f = 1 MHz
CISS
COSS
CRSS
VDS = 20 V TJ = 25°C ID = 50 A
QGS QGD
VGS = 4.5 V VDS = 20 V ID = 50 A
td(off)
td(on)
tf tr
TJ = 25°C TJ = −55°C
TJ(initial) = 100°C
TJ(initial) = 25°C
0.00001 0.01
RDS(on) Limit Thermal Limit Package Limit
10 ms
0.5 ms 1 ms 10 ms TC = 25°C
Single Pulse VGS≤ 10 V 100K
1000 1
0.1
VGS = 0 V
0.0001 1K
1 1E−06
1
100 1
20 60
10K
10
0.001 10
TJ = 125°C 1E−07
14 22 26 34 42 46
100 120
1 3
10
10 0.6
TJ = 150°C TJ = 175°C
0.7 0.8 0.9 1.0 38
18 6
100 100
TYPICAL CHARACTERISTICS
Figure 13. Thermal Characteristics PULSE TIME (sec)
1000 10
0.1 0.0001
0.000001 0.001
R(t) (°C/W) 0.1 10 100
100 1
0.01
0.00001 0.001
1
Single Pulse Duty Cycle = 0.5 0.2
0.050.1 0.02 0.01
0.01
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NTMTS0D6N04CLTXG 0D6N04CL POWER 88
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
NTMTS0D6N04CL
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PACKAGE DIMENSIONS
DFNW8 8.3x8.4, 2P CASE 507AP
ISSUE O
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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