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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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August, 2006− Rev. 3 1 Publication Order Number:

2N6437/D

High−Power PNP Silicon Transistors

High−power PNP silicon transistors are designed for use in industrial−military power amplifier and switching circuit applications.

• High Collector−Emitter Sustaining Voltage — V CEO(sus) = 100 Vdc (Min) — 2N6437

= 120 Vdc (Min) — 2N6438

• High DC Current Gain —

h _FE = 20−80 @I _C = 10 Adc

= 12 (Min) @ I C = 25 Adc

• Low Collector−Emitter Saturation Voltage — V CE(sat) = 1.0 Vdc (Max) @ I C = 10 Adc

• Fast Switching Times @ I _C = 10 Adc t r = 0.3 μs (Max)

t _s = 1.0 μs (Max) t f = 0.25 μs (Max)

• Complement to NPN 2N6339 thru 2N6341

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

Vdc

Emitter−Base Voltage

^ÎÎÎÎ

ÎÎÎÎ

V

_EB ^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

6.0

^ÎÎÎ

ÎÎÎ

Vdc

Collector Current — Continuous Peak

ÎÎÎÎ

I

C ^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

25 50

ÎÎÎ

Adc

Base Current

ÎÎÎÎ

I

_B ÎÎÎÎÎÎ ÎÎÎÎÎÎ

10

ÎÎÎ

Adc

Total Device Dissipation @ T

C

= 25_C

Derate above 25_C

ÎÎÎÎ

P

_D

ÎÎÎÎÎÎ

200 1.14

ÎÎÎ

Watts W/ _ C

Operating and Storage Junction

Temperature Range

^ÎÎÎÎ

ÎÎÎÎ

T

_J

,T

_stg ÎÎÎÎÎÎ ÎÎÎÎÎÎ

– 65 to + 200

ÎÎÎ ÎÎÎ

_ C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

^ÎÎÎÎ

ÎÎÎÎ

Symbol

^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

Max

^ÎÎÎ

ÎÎÎ

Unit

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

R

_θJC ^ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

0.875

^ÎÎÎ

ÎÎÎ

_C/W (1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

http://onsemi.com

25 AMPERE POWER TRANSISTORS

PNP SILICON

100, 120 VOLTS, 200 WATTS

(TO−3)

CASE 1−07

TO−204AA

(3)

http://onsemi.com 2

200

50 0 0 25 50 75 100 125 150 175 200

Figure 1. Power Derating T

_C

, CASE TEMPERATURE (°C) P D , POWER DISSIP AT ION (W

ATTS) 150 125 100 175

75

25

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http://onsemi.com 3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

(I

_C

= 50 mAdc, I

_B

= 0) 2N6437

2N6438

ÎÎÎÎÎ

V

_CEO(sus)

ÎÎÎ

100 120

ÎÎÎÎ

—

ÎÎÎ

Vdc

Collector Cutoff Current

(V

_CE

= 50 Vdc, I

_B

= 0) 2N6437

(V

_CE

= 60 Vdc, I

_B

= 0) 2N6438

ÎÎÎÎÎ

I

_CEO

ÎÎÎ

—

ÎÎÎÎ

50 50

ÎÎÎ

μAdc

Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(V

CE

= 110 Vdc, V

BE(off)

= −1.5 Vdc) 2N6437

(V

_CE

= 130 Vdc, V

_BE(off)

= −1.5 Vdc) 2N6438

(V

CE

= 100 Vdc, V

BE(off)

= −1.5 Vdc, T

C

= 150_C) 2N6437 (V

CE

= 120 Vdc, V

BE(off)

= −1.5 Vdc, T

C

= 150_C) 2N6438

ÎÎÎÎÎ

I

CEX ^ÎÎÎ

ÎÎÎ

—

— —

—

ÎÎÎÎ

10 1.0 10 1.0

ÎÎÎ

μAdc

mAdc

Collector Cutoff Current

(V

_CB

= 120 Vdc, I

_E

= 0) 2N6437

(V

_CB

= 140 Vdc, I

_E

= 0) 2N6438

ÎÎÎÎÎ

I

_CBO

ÎÎÎ

—

ÎÎÎÎ

10 10

ÎÎÎ

μAdc

Emitter Cutoff Current (V

_EB

= 6.0 Vdc, I

_C

= 0)

^ÎÎÎÎÎ

ÎÎÎÎÎ

I

_EBO ^ÎÎÎ

ÎÎÎ

—

^ÎÎÎÎ

ÎÎÎÎ

100

^ÎÎÎ

ÎÎÎ

μAdc

ON CHARACTERISTICS

Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(I

_C

= 0.5 Adc, V

_CE

= 2.0 Vdc) (I

_C

= 10 Adc, V

_CE

= 2.0 Vdc) (I

_C

= 25 Adc, V

_CE

= 2.0 Vdc)

ÎÎÎÎÎ

h

_FE

ÎÎÎ

30 20 12

ÎÎÎÎ

— 120

—

ÎÎÎ

—

= 10 Adc, I

_B

= 1.0 Adc) (I

_C

= 25 Adc, I

_B

= 2.5 Adc)

ÎÎÎÎÎ

V

_BE(sat) ^ÎÎÎ

ÎÎÎ

—

ÎÎÎÎ

1.8 2.5

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product (I

_C

= 1.0 Adc, V

_CE

= 10 Vdc, f

_test

= 10 MHz)

^ÎÎÎÎÎ

ÎÎÎÎÎ

f

_T ^ÎÎÎ

ÎÎÎ

40

^ÎÎÎÎ

ÎÎÎÎ

—

^ÎÎÎ

ÎÎÎ

MHz

Output Capacitance (V

_CE

= 10 Vdc, I

_E

= 0, f = 100 kHz)

^ÎÎÎÎÎ

ÎÎÎÎÎ

C

_ob ^ÎÎÎ

ÎÎÎ

—

^ÎÎÎÎ

ÎÎÎÎ

700

^ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Rise Time (V

_CC

= 80 Vdc, I

_C

= 10 A, V

_BE(off)

= 6.0 Vdc, I

_B1

= 1.0 Adc)

ÎÎÎÎÎ ÎÎÎÎÎ

t

_r ÎÎÎ

ÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

μs

Storage (V

_CC

= 80 Vdc, I

_C

= 10 A, V

_BE(off)

= 6.0 Vdc, I

_B1

= I

_B2

= 1.0 Adc)

ÎÎÎÎÎ

t

_s

ÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

μs

Fall Time (V

_CC

= 80 Vdc, I

_C

= 10 A,V

_BE(off)

= 6.0 Vdc, I

_B1

= I

_B2

= 1.0 Adc)

ÎÎÎÎÎ

t

_f

ÎÎÎ

—

ÎÎÎÎ

0.25

ÎÎÎ

μs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 μs; Duty Cycle v 2.0%.

Figure 2. Switching Time Test Circuit

0.5 Figure 3. Turn−On Time I

C

, COLLECTOR CURRENT (AMP) 0.7

0.2 0.1 0.07

0.7 2.0 3.0 7.0

t

d

@ V

BE(off)

= 6.0 V

+ 9.0 V 0

V

CC

SCOPE R

B

=

10 OHMS

− 5.0 V t

r

, t

f

v 10 ns

DUTY CYCLE = 1.0%

R

C

8.0 OHMS

0.03 0.05

5.0 20

10 μs

− 11 V

1.0 0.3 0.5

1.0 10

NOTE: For information on Figures 3 and 6, R

B

and R

C

were varied to obtain desired test conditions.

+ 80 V

MBR74 5

30 V

CC

= 80 V I

C

/I

B

= 10 T

J

= 25°C

t

r

t, TIME (s) μ

0.3

0.2

0.3

(5)

http://onsemi.com 4

Figure 4. Thermal Response t, TIME OR PULSE WIDTH (ms) 1.0

0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02

0.02 0.03

r(t) EFFECTIVE TRANSIENT THERMAL RESIST ANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

D = 0.5

SINGLE PULSE 0.2

0.05 0.1

DUTY CYCLE, D = t

1

/t

2

100

2.0 Figure 5. Active Region Safe Operating Area 50

5.0 0.01 10 20 70 200

T

J

= 200°C

0.1 10

0.5 I C , COLLECT OR CURRENT (AMP)

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20

0.2 50 100

200 μs

dc 2.0

0.02 0.05 1.0

3.0 5.0 7.0 30

BONDING WIRE LIMITED THERMALLY LIMITED T

_C

= 25°C(SINGLE PULSE) PULSE DUTY CYCLE v 10%

SECOND BREAKDOWN LIM- ITED CURVES APPLY

BELOW RATED V

CEO

5.0 ms 1.0 ms

2N6437 2N6438

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)

v 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

3.0

0.3 Figure 6. Turn-Off Time I

C

, COLLECTOR CURRENT (AMP)

t, TIME (s) μ

0.7 0.5

0.2 0.1

0.03 0.7 1.0 2.0 5.0 10 30

V

CC

= 80 V I

B1

= I

B2

I

C

/I

B

= 10 T

J

= 25°C t

s

3.0 0.3

1.0 0.07 0.05

7.0 20

t

f

2.0 0.5 0.1

Figure 7. Capacitance V

R

, REVERSE VOLTAGE (VOLTS)

0.5 1.0 2.0 5.0 10 20 50 100

CAP ACIT ANCE (pF) 1000

700 300 200

T

J

= 25°C C

ib

C

ob

4000

2000

500

0.2 3000

(6)

http://onsemi.com 5

, BASE CURRENT (A) μ

I B V CE

, COLLECT OR−EMITTER VOL TAGE (VOL TS)

, COLLECT OR CURRENT (A) μ

I C 0.3

Figure 8. DC Current Gain I

C

, COLLECTOR CURRENT (AMP)

10 0.7 1.0 2.0 3.0 5.0 10 20

50 30 20

1.0

0.3 Figure 9. Collector Saturation Region

I

C

, COLLECTOR CURRENT (AMP) 2.0

1.2

0.8

0.4

0 T

_J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

_CE(sat)

@ I

_C

/I

_B

= 10

Figure 10. “On” Voltages

I

B

, BASE CURRENT (AMP)

0 0.02 0.05 0.1 0.2 0.3 1.0 2.0

1.6

0.8 V

_BE

, BASE-EMITTER VOLTAGE (VOLTS) 100

70 h FE

, DC CURRENT GAIN

T

J

= 150°C

+ 25°C

−55 °C

−0.2

−0.1 0 +0.1

+0.2 −0.3 −0.4 −0.5

V

CE

= 40 V T

J

= +150°C

+100°C

REVERSE FORWARD

7.0 30

T

J

= 25°C

I

_C

= 2.0 A 5.0 A 10 A 20 A

V, VOL TAGE (VOL TS)

+2.5

Figure 11. Temperature Coefficients I

C

, COLLECTOR CURRENT (AMP)

V, TEMPERA TURE COEFFICIENTS (mV/ C) ° θ

+2.0

+1.0

−0.5

−2.5

θ

VB

FOR V

BE

*θ

VC

FOR V

CE(sat)

*APPLIES FOR I

C

/I

B

v hFE@VCE + 2.0V 2

Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region V

_BE

@ V

_CE

= 2.0 V

1.8

1.4 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

V

BE

, BASE-EMITTER VOLTAGE (VOLTS) 0

+0.08

+0.16 −0.08 −0.16 −0.24

V

CE

= 40 V

REVERSE FORWARD

V

CE

= 2.0 V V

CE

= 4.0 V

0.5 0.03 0.07 0.5 0.7

1.8

1.4

1.0 0.6 0.4 0.2

0.5 −55 °C to + 25°C + 25°C to +150°C

+ 25°C to +150°C

−55 °C to + 25°C

0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 +1.5

+0.5

−1.0

−1.5

−2.0

+100°C

+ 25°C T

J

= +150°C 1.2

0.6 0.2 1.6

0

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http://onsemi.com 6

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE 2. EMITTER CASE: COLLECTOR

DIM MININCHESMAX MILLIMETERSMIN MAX A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

A N E

C K

−Y−

2

1

U L

G B

V H

CASE 1−07 TO−204AA (TO−3)

ISSUE Z

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N6437/D

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