IGBT - Ultra Field Stop NGTB25N120FL3WG

IGBT - Ultra Field Stop NGTB25N120FL3WG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• ^T

= 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• These are Pb−Free Devices

• Solar Inverter

• Uninterruptible Power Inverter Supplies (UPS)

• ^Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter Voltage V_CES 1200 V

Collector Current

@ TC = 25°C

@ T_C = 100°C

I_C

5025

A

Pulsed Collector Current, Tpulse

Limited by T_Jmax ICM 100 A

Diode Forward Current

@ T_C = 25°C

@ TC = 100°C

I_F

5025

A

Diode Pulsed Current, Tpulse Limited

by T_Jmax IFM 100 A

Gate−emitter Voltage

Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10)

VGE $20

±30 V

Power Dissipation

@ T_C = 25°C

@ T_C = 100°C

P_D

349174

W

Operating Junction Temperature

Range T_J −55 to +175 °C

Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″

from case for 5 seconds TSLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AM

25 A, 1200 V V

= 1.7 V

E

= 0.7 mJ

Device Package Shipping ORDERING INFORMATION

NGTB25N120FL3WG TO−247

(Pb−Free) 30 Units / Rail 25N120FL3 = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

25N120FL3 AYWWG G

E C

G C E

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.43 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 0.78 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 500 mA V_(BR)CES 1200 − − V Collector−emitter saturation voltage V_GE = 15 V, I_C = 25 A

V_GE = 15 V, I_C = 25 A, T_J = 175°C V_CEsat −

− 1.70

2.20 1.95

− V

Gate−emitter threshold voltage VGE = VCE, IC = 400 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited VGE = 0 V, VCE = 1200 V

V_GE = 0 V, V_CE = 1200 V, T_{J =} 175°C ICES −

− −

0.4 0.1

2 mA

Gate leakage current, collector−emitter

short−circuited V_GE = 20 V , V_CE = 0 V I_GES − − 200 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 3085 − pF

Output capacitance C_oes − 94 −

Reverse transfer capacitance C_res − 52 −

Gate charge total

V_CE = 600 V, I_C = 25 A, V_GE = 15 V

Qg − 136 − nC

Gate to emitter charge Q_ge − 29 −

Gate to collector charge Q_gc − 67 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C V_CC = 600 V, I_C = 25 A

Rg = 10 W V_GE = 15 V

td(on) − 15 − ns

Rise time t_r − 21 −

Turn−off delay time td(off) − 109 −

Fall time t_f − 131 −

Turn−on switching loss E_on − 1.0 − mJ

Turn−off switching loss Eoff − 0.7 −

Total switching loss E_ts − 1.7 −

Turn−on delay time

T_J = 150°C V_CC = 600 V, I_C = 25 A

R_g = 10 W V_GE = 15 V

td(on) − 15 − ns

Rise time t_r − 21 −

Turn−off delay time t_d(off) − 113 −

Fall time tf − 169 −

Turn−on switching loss E_on − 1.45 − mJ

Turn−off switching loss Eoff − 0.95 −

Total switching loss E_ts − 2.4 −

DIODE CHARACTERISTICS

Forward voltage V_GE = 0 V, I_F = 25 A

V_GE = 0 V, I_F = 25 A T_{J =} 175°C V_F −

− 3.0

2.8 3.4

− V

Reverse recovery time

T_J = 25°C I_F = 25 A, V_R = 600 V

di_F/dt = 500 A/ms

t_rr − 90 − ns

Reverse recovery charge Q_rr − 0.62 − mc

Reverse recovery current Irrm − 12 − A

Diode peak rate of fall of reverse recovery dI_rrm/dt − −256 − A/ms

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

DIODE CHARACTERISTICS Reverse recovery time

T_J = 125°C IF = 25 A, VR = 600 V

di_F/dt = 500 A/ms

trr − 114 − ns

Reverse recovery charge Q_rr − 1.17 − mc

Reverse recovery current I_rrm − 17 − A

Diode peak rate of fall of reverse recovery

current during tb dIrrm/dt − −296 − A/ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

8 V 7 V 9 V

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

7 6 5 4 3 2 1 00 20 40 60 80 100

7 6 5 4 3 2 1 0 0 20 40 60 100

Figure 3. Output Characteristics Figure 4. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

7 6 5 4 3 2 1 00 20 40 60 100

7 6 5 4 3 2 1 00 20 40 60 100

Figure 5. Typical Transfer Characteristics Figure 6. V_CE(sat) vs. T_J V_GE, GATE−EMITTER VOLTAGE (V) T_J, JUNCTION TEMPERATURE (°C)

14 12 10 6

4 2 00 20 40 60 80 100

175 125

75 25

−25 1.0−75

2.0 3.0 3.5

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)

8 11 V

10 V

7 V 8 V T_J = 25°C VGE = 20 V − 13 V

11 V

10 V 9 V 8 V 7 V T_J = 150°C

V_GE = 20 V − 13 V

11 V

10 V

9 V 7 V and 8 V T_J = −55°C V_GE =

20 V − 13 V

11 V

10 V 9 V T_J = 175°C

V_GE = 20 V − 13 V

8 80

8 80

8 80

T_J = 25°C

T_J = 175°C

8

I_C = 50 A

1.5 2.5

IC = 25 A

I_C = 10 A

−50 0 50 100 150 200

16

TYPICAL CHARACTERISTICS

Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics

V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_F, FORWARD VOLTAGE (V)

90 80 60

50 40 20

10 100 100 1000 10,000

3.0

2.5 4.5

2.0 1.5 1.0 0.5 00 10 30 40 60 70 80 100

Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature

Q_G, GATE CHARGE (nC) T_J, JUNCTION TEMPERATURE (°C)

160 100

80 60 20

00 2 6 8 10 14 16

180 140

120 100 60

40 20 0.30 0.5 0.9 1.1 1.5 1.7

Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC

T_J, JUNCTION TEMPERATURE (°C) I_C, COLLECTOR CURRENT (A)

180 160 120

100 60

40 20 10 10 100 1000

80 70 60 50 40 30 20 010 1 3 5 6

CAPACITANCE (pF) IF, FORWARD CURRENT (A)

VGE, GATE−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ)

SWITCHING TIME (ns) SWITCHING LOSS (mJ)

30 70 100

T_J = 25°C

Coes

C_ies

Cres

20 50 90

T_J = 25°C T_J = 175°C

4 12

V_CE = 600 V VGE = 15 V IC = 25 A

80 160 200

V_CE = 600 V V_GE = 15 V I_C = 25 A Rg = 10 W

E_off E_on

V_CE = 600 V V_GE = 15 V T_J = 175°C Rg = 10 W

Eoff

E_on

90 2

4

80 140 200

VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W

t_d(off)

t_d(on) tr

tf

3.5 4.0 5.0

40 120 140

0.7 1.3

Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG

I_C, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W)

80 70 60 50 40 30 20 110 10 100 1000

60 50

40 70

30 20 10 00

1 2 3 4 5

Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. V_CE

RG, GATE RESISTOR (W) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

60 70

50 40 30 20 10 100

100 1000

750 700 650 600 500

450 400 0350 0.5 1.0 1.5 2.0

Figure 17. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

700 650 600 550 500 450 400 10350 100 1000

SWITCHING TIME (ns) SWITCHING LOSS (mJ)

SWITCHING TIME (ns) SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

V_CE = 600 V V_GE = 15 V TJ = 175°C Rg = 10 W

E_off E_on t_d(off)

t_d(on) t_r t_f

90

V_CE = 600 V V_GE = 15 V T_J = 175°C I_C = 25 A 6

550 800

E_off E_on V_GE = 15 V

T_J = 175°C I_C = 25 A Rg = 10 W VCE = 600 V

VGE = 15 V TJ = 175°C

IC = 25 A t_d(off)

td(on)

tr

tf

V_GE = 15 V TJ = 175°C IC = 25 A Rg = 10 W t_d(off)

td(on)

t_r t_f

750

2.5

Figure 18. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V)

1K 100

10 0.11

100 1000

IC, COLLECTOR CURRENT (A)

10K 800

10

1

50 ms 100 ms

1 ms dc operation

Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature

TYPICAL CHARACTERISTICS

Figure 19. Reverse Bias Safe Operating Area Figure 20. t_rr vs. di_F/dt V_CE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)

1K 100

10 11

10 100 1000

900

700 1100

500 300

0100 50 100 150 250

Figure 21. Q_rr vs. di_F/dt Figure 22. I_rm vs. di_F/dt diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)

900 1100

700 500

300 0100

1.0

900 700

300 0100

10 20 40 50

Figure 23. V_F vs. T_J T_J, JUNCTION TEMPERATURE (°C)

100 75 50 25 0

−25

−50 1.0−75 2.0 4.5

IC, COLLECTOR CURRENT (A) trr, REVERSE RECOVERY TIME (ns)

Qrr, REVERSE RECOVERY CHARGE (mC) Irm, REVERSE RECOVERY CURRENT (A)

VF, FORWARD VOLTAGE (V)

10K

200

500 1100

150 300

30

200 V_GE = 15 V, T_C = 175°C

T_J = 25°C, I_F = 25 A

T_J = 175°C, IF = 25 A

T_J = 25°C, IF = 25 A TJ = 175°C, IF = 25 A

T_J = 25°C, IF = 25 A TJ = 175°C, IF = 25 A

0.5 1.5 2.5

2.0

IC = 50 A

IC = 25 A

I_C = 10 A 1.5

125 175

2.5 3.0 3.5 4.0

V_R = 400 V

VR = 400 V

V_R = 400 V

Figure 24. Collector Current vs. Switching Frequency

0.01 0.1 1 10 100 1000

FREQUENCY (kHz)

Ipk (A)

V_CE = 600 V, R_G = 10 W, V_GE = 15 V 120

100 80 60 40 20 0

Ramp, T_C = 80°C Ramp, TC = 110°C

Square, T_C = 80°C Square, T_C = 110°C

Figure 25. IGBT Transient Thermal Impedance PULSE TIME (sec)

R(t), SQUARE−WAVE PEAK (°C/W)

Figure 26. Diode Transient Thermal Impedance PULSE TIME (sec)

50% Duty Cycle 20%

10%

5%

2%

Single Pulse

50% Duty Cycle 20%

10%

5%

2%

Single Pulse 0.0001

0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

R_qJC = 0.43

0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

R_qJC = 0.78

Junction Case

C₁ C₂

R1 R2 Rn

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C C_n

Ci (J/W) 0.0105 0.0027 0.0363 0.0206 0.0857 3.3131 Ri (°C/W)

0.0096 0.1168 0.0275 0.1537 0.1167 0.0095

0.001

R(t), SQUARE−WAVE PEAK (°C/W)

Junction Case

C₁ C₂

R₁ R₂ R_n

Duty Factor = t1/t2

Peak T_J = P_DM x Z_qJC + T_C C_n

Ci (J/W) 0.000058 0.000427 0.001260 0.001363 0.003395 0.022881 Ri (°C/W) 0.017265 0.023397 0.025095 0.073345 0.093146 0.043705

0.052571 0.078312 0.128193 1.422617 0.060153 0.127694 0.246682 0.070293

Figure 27. Test Circuit for Switching Characteristics

Figure 28. Definition of Turn On Waveform

Figure 29. Definition of Turn Off Waveform

TO−247 CASE 340AM

ISSUE C

DATE 07 SEP 2021

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAMS*

XXXXXXXXX XXXXXXXXX

AYWWG XXXXXXXXX

AYWWG

98AON77284F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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