NTMYS011N04C Power MOSFET

Power MOSFET

40 V, 12 m W , 35 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• ^{Low R}

to Minimize Conduction Losses

• ^{Low Q}

and Capacitance to Minimize Driver Losses

• LFPAK4 Package, Industry Standard

• These Devices are Pb−Free and are RoHS Compliant

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS 40 V

Gate−to−Source Voltage V_GS ±20 V

Continuous Drain Current R_JC (Notes 1, 2, 3)

Steady

State T_C = 25°C I_D 35 A

TC = 100°C 20

Power Dissipation

R_JC (Notes 1, 2) T_C = 25°C P_D 28 W

T_C = 100°C 9.1

Continuous Drain Current R_JA (Notes 1, 2, 3)

Steady

State T_A = 25°C I_D 13 A

TA = 100°C 9.1

Power Dissipation

R_JA (Notes 1, 2) T_A = 25°C P_D 3.8 W

T_A = 100°C 1.9

Pulsed Drain Current T_A = 25°C, t_p = 10 s I_DM 173 A Operating Junction and Storage Temperature T_J, T_stg −55 to

+ 175 °C

Source Current (Body Diode) IS 24 A

Single Pulse Drain−to−Source Avalanche

Energy (T_J = 25°C, IL(pk) = 1.9 A) EAS 75 mJ Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) T_L 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State R_JC 5.3 °C/W Junction−to−Ambient − Steady State (Note 2) R_JA 39

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

MARKING DIAGRAM www.onsemi.com

V_(BR)DSS R_DS(ON) MAX I_D MAX

40 V 12 m @ 10 V 35 A

See detailed ordering, marking and shipping information on page 5 of this data sheet.

ORDERING INFORMATION G (4)

S (1,2,3) N−CHANNEL MOSFET

D (5)

LFPAK4 CASE 760AB

011N04C = Specific Device Code A = Assembly Location

WL =Wafer Lot

Y = Year

W = Work Week

011N04 C AWLYW

Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/

T_J 25 mV/°C

Zero Gate Voltage Drain Current I_DSS VGS = 0 V, V_DS = 40 V

T_J = 25°C 10

T_J = 125°C 250 A

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = 20 V 100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 20 A 2.5 3.5 V

Negative Threshold Temperature Coefficient V_GS(TH)/T_J −7.6 mV/°C

Drain−to−Source On Resistance R_DS(on) V_GS = 10 V I_D = 10 A 10 12 m

Forward Transconductance g_FS V_DS = 15 V, I_D = 10 A 111 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C_ISS

V_GS = 0 V, f = 1 MHz, V_DS = 25 V

420

Output Capacitance C_OSS 230 pF

Reverse Transfer Capacitance C_RSS 11

Total Gate Charge Q_G(TOT)

VGS = 10 V, VDS = 32 V; ID = 10 A

7.9

Threshold Gate Charge Q_G(TH) 1.6 nC

Gate−to−Source Charge Q_GS 2.5

Gate−to−Drain Charge Q_GD 1.5

Plateau Voltage V_GP 4.7 V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time t_d(ON)

V_GS = 10 V, V_DS = 32 V, ID = 10 A, RG = 1

8.0

Rise Time tr 16 ns

Turn−Off Delay Time td(OFF) 16

Fall Time tf 5.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V_SD V_GS = 0 V,

I_S = 10 A

TJ = 25°C 0.84 1.2

TJ = 125°C 0.71 V

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/s, I_S = 10 A

19

Charge Time ta 9.0 ns

Discharge Time t_b 10

Reverse Recovery Charge Q_RR 6.7 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 s, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V_DS, DRAIN−TO−SOURCE VOLTAGE (V) V_GS, GATE−TO−SOURCE VOLTAGE (V)

1.5 1.0

0.5 00

5 10 25 35

4.0 03.0

10 25 30 35

Figure 3. On−Resistance vs. Gate−to−Source Voltage

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

V_GS, GATE−TO−SOURCE VOLTAGE (V) I_D, DRAIN CURRENT (A)

10 9

8 7

6 0 5

5 20

30 80

10 6 8 15

Figure 5. On−Resistance Variation with Temperature

Figure 6. Drain−to−Source Leakage Current vs. Voltage

T_J, JUNCTION TEMPERATURE (°C) V_DS, DRAIN−TO−SOURCE VOLTAGE (V) 125

100 75 50 25 0

−25 0.7−50 1.1 1.3 1.5 1.9

40 30

25 20 5

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (m)RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) IDSS, LEAKAGE (nA)

10 V 6 V

5 V

4 V

V_DS = 3 V

TJ = 125°C

T_J = −55°C T_J = 25°C

10 15 25

I_D = 10 A TJ = 25°C

5 40 10 12

V_GS = 10 V

I_D = 10 A V_GS = 10 V

TJ = 125°C T_J = 150°C

15 35

10 1K 10K RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 4

175 1.7

3.0 2.5

2.0 6.0

0.9

150

20 20

15

5

50 7

9 13

T_J = 85°C 15

30

4.5 3.5

35 30 40

20 70

100

0 60

8 V 7 V

9 V

5.0 5.5

11 14

10

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) Q_g, TOTAL GATE CHARGE (nC)

30 25

5 10 20 40

10 100

5 4 3 2 1 00 4 9 10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE () V_SD, SOURCE−TO−DRAIN VOLTAGE (V)

10 11

10

0.7 0.8 0.9

0.6 0.10.3

8.5

Figure 11. Maximum Rated Forward Biased Safe Operating Area

V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

1000 10

1 0.10.1

1 10 1000

C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns) IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = 25°C V_GS = 0 V f = 1 MHz

C_iss Coss

C_rss

2 5 6

VDS = 32 V I_D = 10 A T_J = 25°C

V_GS = 10 V V_DS = 32 V tr

t_f

t_d(off) t_d(on)

VGS = 0 V

T_C = 25°C V_GS ≤ 10 V Single Pulse

RDS(on) Limit Thermal Limit Package Limit

10 s

10 ms

7 6 Q_gd

100 1K

8

0.5 ms 1 ms

Figure 12. Maximum Drain Current vs. Time in Avalanche

TIME IN AVALANCHE (s) 0.00001

0.1 1 10 100

IPEAK (A)

T_J(initial) = 25°C

T_J(initial) = 100°C

0.0001 0.001 0.01

100

15 35

1 3 7 8

Q_gs

T_J = 25°C T_J = 125°C

T_J =

−55°C 1.0 10

0.5 4.3

100

0.4 2.2

6.4

TYPICAL CHARACTERISTICS

0.001 0.1 1 10 100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 13. Thermal Characteristics PULSE TIME (sec)

RJA (°C/W)

Single Pulse 50% Duty Cycle

20%

10%

5%

2%

1%

0.01

0.0000001

DEVICE ORDERING INFORMATION

Device Marking Package Shipping^†

NTMYS011N04CTWG 011N04C LFPAK4

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

CASE 760AB ISSUE C

DATE 19 NOV 2019

XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot

Y = Year

W = Work Week

GENERIC MARKING DIAGRAM*

*This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking.

XXXXXX XXXXXX AWLYW

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98AON82777G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 LFPAK4 5x6

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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