Bipolar Transistor

(1)

Bipolar Transistor

(–)100 V, (–)1 A, Low V _CE (sat), (PNP)NPN Single PCP

2SA1416, 2SC3646

• FBET, MBIT プロセス

• スイッチングタイムがい

• でハイブリット IC として!,

!が"#である

• &'で()"*が+きい

• These Devices are Pb−Free and are RoHS Compliant ( )

は

2SA1416

のをす。

ABSOLUTE MAXIMUM RATINGS at Ta = 25

°

C

Unit

コレクタ・ベース電

V

_CBO

(−) 120 V

コレクタ・エミッタ電

V

_CEO

(−) 100 V

エミッタ・ベース電圧

V

_EBO

(−) 6 V

コレクタ電流

I

_C

(−) 1 A

コレクタ電流 (パルス)

I

_CP

(−) 2 A

コレクタ損失

P

C

500 mW

コレクタ損失 (注1)

1.3 W

接合部温度

T

_J

150

°

C

存周囲温度

T

_STG

−55 to

+150

^°

C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(参考訳)

最大定格を超えるストレスは、デバイスにダメージをえる危険性があります。これらの定格値を超えた場合は、デバイスの機能性を損ない、ダメージが生じ、-頼性に影響を及ぼす危険性があります。

1. セラミック基板 (250mm²

y 0.8mm) 装着時

MARKING DIAGRAM

ORDERING INFORMATION SOT−89 / PCP−1

CASE 419AU 2

3 1

2

3 1 1: Base

2: Collector 3: Emitter

2SA1416 2SC3646

AB

LOT No.

CB

LOT No.

RANK RANK

2SA1416 2SC3646

1 2 3

See detailed ordering and shipping information on page 6 of this data sheet.

(2)

ELECTRICAL CHARACTERISTICS at T

_A

= 25°C

Min Typ Max Unit

コレクタしゃ断電

I

_CBO

V

CB

= (-)100 V,

I

_E

= 0 A (-)100 nA

エミッタしゃ断電流

I

_EBO

V

_EB

= (-)4V, I

C

= 0 A (-)100 nA

直流電流増幅率

h

_FE

V

_CE

= (-)5 V,

I

_C

= ( - )100 mA 100* 400*

利得帯域幅積

f

_T

V

_CE

= ( - )10 V,

I

_C

= (-)100 mA 120 MHz

出力容量

Cob V

_CB

= (-)10 V,

f = 1 MHz (13)8.5 pF

コレクタ・エミッタ飽和電圧

V

_CE

(sat) I

_C

= (-)400 mA,

I

B

= (-)40 mA (−0.2)0.1 (-0.6)0.4 V

ベース・エミッタ飽和電圧

V

BE

(sat) I

C

= (-)400 mA,

I

_B

= (-)−40 mA (-)0.85 (-)1.2 V

コレクタ・ベース降5電圧

V

_(BR)CBO

I

_C

= (-)10 mA, I

E

= 0 A (-)120 V

コレクタ・エミッタ降5電圧

V

_(BR)CEO

I

_C

= (-)1 mA, R

BE

= ∞ (-)100 V

エミッタ・ベース降5電圧

V

_(BR)EBO

I

_E

= (-)10 mA, I

C

= 0 A (-)6 V

ターンオン時間

t

_on 指定回路において

(80)80 ns

蓄積時間

t

_stg

(700)850 ns

:降時間

t

_f

(40)50 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(

参考訳

)

製品パラメータは、特別な記述が無い限り、記載されたテスト条=に対する電気的特性で示しています。異なる条=:で製品動?を行った時には、電気的特性で示している特性を得られない場合があります。

*2SA1416 / 2SC3646

は

100 mA hFE

により次のように分類している。

ランク

R S T h

_FE

100 to 200 140 to 280 200 to 400

スイッチングタイム+,-

+ +

50 W INPUT PW = 20 ms D.C. ≤1%

I

_C

= 10 I

_B1

= −10 I

_B2

= 400 mA (PNPの場合極性逆)

I

_B1

I

B2

R

B

V

R

100 mF 470 mF 50 V

−5 V

R

L

(3)

TYPICAL CHARACTERISTICS

コレクタ・エミッタ電圧, VCE

(V)

コレクタ電流

, I

C

(A)

コレクタ電流

, I

C

(A)

(V)

コレクタ電流

, I

C

(mA)

コレクタ電流

, I

C

(mA)

(V)

コレクタ電流

, I

C

(A)

コレクタ電流

, I

C

(A)

ベース・エミッタ電圧

, V

_BE

(V)

ベース・エミッタ電圧, VBE

(V) 2SA1416

I

_B

= 0 mA

0 −1 −2 −3 −4 −5

0 −0.2

−0.4

−0.6

−0.8

−1.0 2SC3646

I

_B

= 0 mA 0

0.2 0.4 0.6 0.8 1.0

0 1 2 3 4 5

−20 mA

−25 mA

−30 mA

−15 mA

−10 mA

−5 mA

−3 mA

−2 mA

−1 mA

30 mA 25 mA

20 mA 15 mA

10 mA 5 mA 3 mA 2 mA 1 mA

2SA1416

−2.5 mA

−2.0 mA

−1.5 mA

−1.0 mA

−0.5 mA

I

B

= 0 mA 0

−100

−200

−300

−400

−500

0 −10 −20 −30 −40 −50

2SC3646 2.5 mA 2.0 mA

1.5 mA

1.0 mA

0.5 mA

I

_B

= 0 mA 0

100 200 300 400 500

0 10 20 30 40 50

2SA1416 V

CE

= −5 V

0 −0.2

−0.6

−0.8

−1.0

−1.2

−0.4

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0

0.2 0.6 0.8 1.0 1.2

0.4 0 0.2 0.4 0.6 0.8 1.0 1.2

2SC3646 V

_CE

= 5 V

Ta = 75°C 25°C

−25°C Ta = 75°C 25°C

−25 ° C

1.

I

_C

− V

_CE 2.

I

_C

− V

_CE

3.

I

_C

− V

_CE 4.

I

_C

− V

_CE

5.

I

_C

− V

_BE 6.

I

_C

− V

_BE

(4)

TYPICAL CHARACTERISTICS (continued)

コレクタ電流

, I

_C

(A)

, h

FE利得帯域幅積

, f

T

(MHz)

コレクタ電流, IC

(A)

, V

CE

(sat) (mV)

(A)

コレクタ電流

, I

_C

(A)

, h

FE出力容量

, Cob (pF)

コレクタ・ベース電圧, VCB

(V) 1000

100 10 7 5 3 2

7 5 3 2

7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 2SA1416 V

_CE

= −5 V Ta = 75°C

25°C −25 ° C

7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 1000

100 10 7 5 3 2

7 5 3 2

2SC3646 V

_CE

= 5 V Ta = 75°C

25°C −25°C

100 10 3 2

7 5 3 2

7 0.01 2 3 5 7 0.1 2 3 5 7 1.0

2SA1416

2SC3646

2SA1416 / 2SC3646

V

_CE

= 10 V 2SA1416 / 2SC3646

f = 1 MHz

2SA1416

2SC3646 7

5 3 2

7 5 3 2 100

10 7 1.0 2 3 5 7 10 2 3 5 7 100 2

PNP

の場合負号省略

−1000

−100 7 5 3 2

7 5 3 2

2SA1416 I

C

/ I

B

= 10

Ta = 75 ° C

25°C

−25°C

7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 7

5 3 2

7 5 3 2 1000

100 2SC3646 I

C

/ I

B

= 10

Ta = 75°C

−25°C

, V (sat) (mV)

CE

25°C

(A)

7.

h

_FE

− I

_C 8.

h

_FE

− I

_C

9.

f

_T

− I

_C 10.

Cob − V

_CB

11.

V

_CE(sat)

− I

_C 12.

V

_CE(sat)

− I

_C

PNP

の場合負号省略

PNPの場合負号省略

(5)

TYPICAL CHARACTERISTICS (continued)

(A)

, V

BE

(sat) (V)

(A)

周囲温度

, Ta ( ° C)

コレクタ損失

, P

C

(W)

−10

−1.0 7 5 3 2

7 5

3 7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 Ta = −25 ° C

25°C −75°C

2SA1416 I

_C

/ I

_B

= 10

10 1.0 7 5 3 2

7 5

3 7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 2SC3646 I

_C

/ I

_B

= 10

Ta = −25°C

25°C −75°C

, V

BE

(sat) (V)

1.0

0.1 0.01 5 3 2

5 3 2 7

5 7 7

5 1.0 2 3 5 7 10 2 3 5 7 100 2

コレクタ電流

, I

C

(A)

コレクタ・エミッタ電圧

, V

_CE

(V) I

_CP

= 2 A

I

_C

= 1 A 1 ms

10 ms 100 ms DC operation

PNP の場合負号省略 2SA1416 / 2SC3646 1パルス Ta = 25°C

セラミック基板

(250 mm

²

x 0.8 mm) 装着時

1.6 1.4 1.3 1.2 1.0 0.8 0.6 0.5 0.4 0.2

0 0 20 40 60 80 100 120 140 160

2SA1416 / 2SC3646

セラミック基板 (250 mm²

x 0.8 mm)

装着時

放熱板なし

13.

V

_BE(sat)

− I

_C 14.

V

_BE(sat)

− I

_C

15.

ASO

16.

P

_C

− Ta

(6)

ORDERING INFORMATION

Device Marking

パッケージ>

Shipping

^†

2SA1416S−TD−E AB SOT−89 / PCP−1

(Pb−Free) 1000 / Tape & Reel 2SA1416T−TD−E

2SC3646S−TD−E CB

2SC3646T−TD−E

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

(7)

SOT−89 / PCP−1 CASE 419AU

ISSUE O

DATE 30 APR 2012

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98AON79746E DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

SOT−89 / PCP−1

(8)

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT LITERATURE FULFILLMENT:

Bipolar Transistor