MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL

MOSFET - Power,

Single N-Channel, DFNW8, DUAL COOL ⁾

80 V, 1.56 m W , 287 A

NTMTSC1D5N08MC

Features

• Small Footprint (8x8 mm) for Compact Design

• ^{Low R}

to Minimize Conduction Losses

• ^{Low Q}

and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 80 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain

Current R_qJC (Note 2) Steady State

T_C = 25°C ID 287 A Power Dissipation

R_qJC (Note 2) P_D 250 W

Continuous Drain Current R_qJA

(Notes 1, 2) Steady State

T_A = 25°C ID 33 A

Power Dissipation

R_qJA (Notes 1, 2) P_D 3.3 W

Pulsed Drain Current TC = 25°C, tp = 10 ms I_DM 3500 A Operating Junction and Storage Temperature

Range T_J, T_stg −55 to

+150 °C Single Pulse Drain−to−Source Avalanche

Energy (I_L(pk) = 31 A, L = 3 mH) E_AS 1441 mJ Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) T_L 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 2) R_qJC 0.5 °C/W Junction−to−Top Source − Steady State

(Note 2) R_qJC 0.8

Junction−to−Ambient − Steady State (Note 2) R_qJA 38

G (1)

S (2−4) N−CHANNEL MOSFET

D (5−8)

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION V_(BR)DSS R_DS(ON) MAX I_D MAX

80 V 1.56 mW @ 10 V

287 A

MARKING DIAGRAM

N1D5N08 = Specific Device Code A = Assembly Location WL = 2−digit Wafer Lot Code Y = Year Code

W = Work Week Code 4.0 mW @ 6 V

DFNW8 DUAL COOL CASE 507AS

N1D5N08 AWLYW

Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/

T_J I_D = 250 mA, ref to 25°C 82 mV/°C

Zero Gate Voltage Drain Current I_DSS V_GS = 0 V,

V_DS = 80 V T_J = 25°C 1

T_J = 125°C 250 mA

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 650 mA 2.0 3.0 4.0 V

Negative Threshold Temperature Coefficient V_GS(TH)/T_J I_D = 650 mA, ref to 25°C −8.3 mV/°C

Drain−to−Source On Resistance R_DS(on) V_GS = 10 V I_D = 80 A 1.10 1.56 mW

Drain−to−Source On Resistance R_DS(on) V_GS = 6 V I_D = 58 A 1.75 4.0 mW

Forward Transconductance g_FS V_DS = 5 V, I_D = 80 A 219 S

Gate Resistance R_G T_A = 25°C 0.9 W

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C_ISS

V_GS = 0 V, f = 1 MHz, V_DS = 40 V

7420 10,400

Output Capacitance C_OSS 2555 3600 pF

Reverse Transfer Capacitance C_RSS 101 175

Total Gate Charge Q_G(TOT)

V_GS = 10 V, V_DS = 40 V; I_D = 80 A

101 140

nC

Threshold Gate Charge Q_G(TH) 20 28

Gate−to−Source Charge Q_GS 32

Gate−to−Drain Charge Q_GD 21

Output Charge Q_OSS 141

Sync Charge Qsync 82

Plateau Voltage Vplateau 5 V

SWITCHING CHARACTERISTICS, V_GS = 10 V (Note 3)

Turn−On Delay Time td(ON)

V_GS = 10 V, V_DS = 40 V, ID = 80 A, RG = 6 W

30

Rise Time tr 24 ns

Turn−Off Delay Time td(OFF) 69

Fall Time tf 31

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, IS = 2 A 0.7 1.2

VGS = 0 V, IS = 80 A 0.8 1.3 V

Reverse Recovery Time t_RR

I_F = 40 A, di/dt = 300 A/ms 39 62 ns

Reverse Recovery Charge Q_RR 89 142 nC

Reverse Recovery Time t_RR

I_F = 40 A, di/dt = 1000 A/ms 31 50 ns

Reverse Recovery Charge Q_RR 209 335 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) I_D, DRAIN CURRENT (A)

0 300

00 3 5

Figure 3. Normalized On Resistance vs.

Junction Temperature

Figure 4. On−Resistance vs. Gate−to−Source Voltage

T_J, JUNCTION TEMPERATURE (°C) V_GS, GATE−TO−SOURCE VOLTAGE (V) 125

75 50 0.6 0

5 04

Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current V_GS, GATE−TO−SOURCE VOLTAGE (V) V_SD, BODY DIODE FORWARD VOLTAGE (V)

4 02

300

1.2 1.0 0.8

0

ID, DRAIN CURRENT (A) RDS(on), ON−RESISTANCE (mW)

ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)

ID = 80 A VGS = 10 V

V_DS = 5 V

5

1.2

0.2

300 V_GS = 4.5 V

1

T_J = 25°C 100 2

4

7 8

−25 2.0

100

150

TJ = −55°C 0.1

0.01 0.001 4

TJ = 25°C 0

5.0 V

0.4 10

100 5.5 V

1

200

−50

2 3 4

200

−75

3 5 6 7

1

6 8 9

200

T_J = 150°C 10

0.8 1.0 1.4 1.6 1.8

100 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE

VGS = 4.5 V

6.0 V 8.0 V 5.0 V

10 V

TJ = 125°C

I_D = 80 A

25 100

RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE

10

T_J = 25°C

T_J = −55°C T_J = 150°C

0.6 V_GS = 0 V

6.0 V8.0 V10 V

300 6

2

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage

Q_g, GATE CHARGE (nC) V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

4

100.1

Figure 9. Unclamped Inductive Switching

Capability Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

t_AV, TIME IN AVALANCHE (mS) T_C, CASE TEMPERATURE (°C)

100 1 1

50 25

0

Figure 11. Forward Biased Safe Operating

Area Figure 12. Single Pulse Maximum Power

Dissipation

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

10 1

0.10.1 10 100 1K

1M

VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF)

IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT(A) IPEAK, PEAK TRANSIENT POWER (W)

f = 1 MHz VGS = 0 V

0.00001 1

R_DS(on) Limit Thermal Limit

10 ms

100 ms/

DC 1 ms 10 ms TC = 25°C

R_qJC = 0.5°C/W Single Pulse 10

60

V_GS = 10 V

0.0001 6

50 1K

1

100 10

8

300

0.001 100

100

0.01 0.1 10

100

120

100 150

0 1

1K

100 150 200

10 100K

40 0

2

0.1 0.01

1K 10K 100 ms

V_GS = 6 V

R_qJC = 0.5°C/W

75

C_ISS

C_OSS

C_RSS

125 1K

10

TJ = 25°C

T_J = 100°C T_J = 150°C

20 80

V_DD = 40 V

V_DD = 30 V

VDD = 50 V

100

100K 250 10K

4K

TYPICAL CHARACTERISTICS

Figure 13. Transient Thermal Impedance t, RECTANGULAR PULSE DURATION (s)

0.1 0.0001

0.001 0.1

r(t), NORMALIZED THERMAL IMPEDANCE

10

1 0.01

0.00001 0.001

1

Single Pulse Duty Cycle = 0.5 0.2

0.050.1 0.02 0.01 0.01

P_DM

t₁

Notes:

Z_qJC (t) = r(t) x R_qJC R_qJC = 0.5°C/W

Peak T_J = P_DM x Z_qJC (t) + T_C Duty Cycle, D = t₁/t₂

t₂

DEVICE ORDERING INFORMATION

Device Marking Package Shipping^†

NTMTSC1D5N08MC N1D5N08 DFNW8 DUAL COOL

(Pb−Free) 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

CASE 507AS ISSUE B

DATE 29 MAR 2021

XXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Code Y = Year Code W = Work Week Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

98AON95716G DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3

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