IGBT NGTB75N65FL2WG

IGBT NGTB75N65FL2WG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features

• Extremely Efficient Trench with Field Stop Technology

• ^T

= 175 ° C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• ⁵ m s Short−Circuit Capability

• These are Pb−Free Devices

• Solar Inverters

• Uninterruptible Power Supplies (UPS)

• ^Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter Voltage V_CES 650 V

Collector Current

@ T_C = 25°C

@ T_C = 100°C

I_C

10075

A

Diode Forward Current

@ T_C = 25°C

@ T_C = 100°C

IF

10075

A

Diode Pulsed Current

T_PULSE Limited by T_J Max I_FM 200 A

Pulsed Collector Current, T_pulse Limited by TJmax

I_CM 200 A

Short−circuit Withstand Time V_GE = 15 V, V_CE = 400 V, T_J≤ +150°C

tSC 5 ms

Gate−emitter Voltage V_GE ±20 V

Transient Gate−emitter Voltage V

(TPULSE = 5 ms, D < 0.10) ±30

Power Dissipation

@ T_C = 25°C

@ T_C = 100°C

PD

595265

W

Operating Junction Temperature

Range T_J −55 to +175 °C

Storage Temperature Range T_stg −55 to +175 °C Lead temperature for soldering, 1/8″

from case for 5 seconds T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AM

75 A, 650 V V

= 1.70 V

E

= 1.0 mJ

Device Package Shipping ORDERING INFORMATION

NGTB75N65FL2WG TO−247

(Pb−Free) 30 Units / Rail 75N65FL2 = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

75N65FL2 AYWWG G

E C

G C E

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.28 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 0.62 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage,

gate−emitter short−circuited V_GE = 0 V, I_C = 500 mA V(BR)CES 650 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 75 A

VGE = 15 V, IC = 75 A, TJ = 175°C V_CEsat 1.50

− 1.75

2.30 2.00

− V

Gate−emitter threshold voltage V_GE = V_CE, I_C = 350 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited V_GE = 0 V, V_CE = 650 V

VGE = 0 V, VCE = 650 V, TJ = 175°C I_CES −

− −

− 0.1

4.0 mA

Gate leakage current, collector−emitter

short−circuited V_GE = 20 V , V_CE = 0 V I_GES − − 200 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 7500 − pF

Output capacitance C_oes − 300 −

Reverse transfer capacitance C_res − 190 −

Gate charge total

V_CE = 480 V, I_C = 50 A, V_GE = 15 V

Q_g − 310 − nC

Gate to emitter charge Qge − 60 −

Gate to collector charge Qgc − 150 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C VCC = 400 V, IC = 75 A

R_g = 10 W VGE = 0 V/ 15 V

t_d(on) − 110 − ns

Rise time t_r − 48 −

Turn−off delay time t_d(off) − 270 −

Fall time t_f − 70 −

Turn−on switching loss Eon − 2.2 − mJ

Turn−off switching loss Eoff − 1.1 −

Total switching loss E_ts − 3.3 −

Turn−on delay time

TJ = 150°C V_CC = 400 V, I_C = 75 A

R_g = 10 W VGE = 0 V/ 15 V

t_d(on) − 100 − ns

Rise time t_r − 50 −

Turn−off delay time t_d(off) − 280 −

Fall time t_f − 100 −

Turn−on switching loss Eon − 2.8 − mJ

Turn−off switching loss Eoff − 1.6 −

Total switching loss E_ts − 4.4 −

DIODE CHARACTERISTIC

Forward voltage V_GE = 0 V, I_F = 75 A

V_GE = 0 V, I_F = 75 A, T_J = 175°C V_F 1.50

− 2.20

2.40 2.90

− V

Reverse recovery time T_J = 25°C

I_F = 75 A, V_R = 400 V di_F/dt = 200 A/ms

t_rr − 80 − ns

Reverse recovery charge Q_rr − 0.40 − mC

Reverse recovery current I_rrm − 8 − A

Reverse recovery time TJ = 175°C

I_F = 75 A, V_R = 400 V di_F/dt = 200 A/ms

t_rr − 143 − ns

Reverse recovery charge Q_rr − 1.45 − mC

Reverse recovery current Irrm − 16 − A

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

8 6

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

10 5

0

Figure 5. V_CE(sat) vs. T_J T_J, JUNCTION TEMPERATURE (°C)

175 150 125 100 75 50 25 0

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 V_GE = 20 V

to 13 V T_J = 25°C

9 V 8 V7 V

8 6

5 4 3 2 1 IC, COLLECTOR CURRENT (A)

7 T_J = 150°C

9 V 8 V 7 V

8 6

5 4 3 2 1 0

IC, COLLECTOR CURRENT (A)

7 TJ = −55°C

9 V

8 V T_J = 25°C

TJ = 150°C

200

VGE = 20 V to 15 V

VGE = 20 V to 13 V

1 2 3 4 6 7 8 9

−75 −50 −25 2.50

2.00

1.50

1.00

0.50 0

I_C = 75 A I_C = 50 A I_C = 25 A

Figure 6. Typical Capacitance VCE, COLLECTOR−EMITTER VOLTAGE (V)

90 80 50

40 30 20 10 0 100,000

C, CAPACITANCE (pF)

100 Cies

C_oes C_res

70 60 10 V

11 V

10 V 11 V

7 V

10 V 11 V

11 12 13

T_J = 25°C 120

120 100 80 60 40 20 0

10,000 1000

100

10 1 100

80 60 40 20

0 0

200 180 160 140

120 100 80 60 40 20 0 200 180 160 140

120 100 80 60 40 20 0 200 180 160 140

140 160

13 V

TYPICAL CHARACTERISTICS

E_on Figure 7. Diode Forward Characteristics

V_F, FORWARD VOLTAGE (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 70

IF, FORWARD CURRENT (A)

T_J = 25°C T_J = 150°C

60 50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

150 100 50 00

2 4 6 8 12 14 16

VGE, GATE−EMITTER VOLTAGE (V)

200 10

V_CE = 400 V

V_CE = 400 V V_GE = 15 V

I_C = 75 A

Figure 9. Switching Loss vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 V_CE = 400 V V_GE = 15 V I_C = 75 A Rg = 10 W E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0 100 1000

SWITCHING TIME (ns)

160 VCE = 400 V V_GE = 15 V I_C = 75 A Rg = 10 W t_r

td(on)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A)

45 35 25 15 6

SWITCHING LOSS (mJ)

V_CE = 400 V V_GE = 15 V T_J = 150°C Rg = 10 W

Eoff

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 100

1000

SWITCHING TIME (ns) VCE = 400 V

V_GE = 15 V T_J = 150°C Rg = 10 W

3.5 4.0 250

Eon

t_f t_d(off)

10

t_r t_d(on)

tf

t_d(off)

55 65 75 85 1015 25 35 45 55 65 75 85

3.0

300 350

2.5 2.0 1.5 1.0 0.5 0

95 105 5

4 3 2 1

0 95 105

E_on

Eoff

E_off

Figure 13. Switching Loss vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING LOSS (mJ)

VCE = 400 V V_GE = 15 V T_J = 150°C I_C = 75 A

55 65 75 85

Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING TIME (ns)

10,000

55 65 75 85

1000

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400 350

SWITCHING LOSS (mJ)

650 600 V_GE = 15 V T_J = 150°C I_C = 75 A Rg = 10 W

Figure 16. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns)

1000

100

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 0.11

1 10 100 1000

50 ms 100 ms

1 ms dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1 10 100 1000

V_GE = 15 V, T_C = 150°C

1000 100

10 1

Eon

tr

t_d(on)

t_f t_d(off) V_CE = 400 V

V_GE = 15 V T_J = 150°C I_C = 75 A

100

10

V_GE = 15 V TJ = 150°C IC = 75 A Rg = 10 W

t_r t_d(on)

t_f t_d(off)

10 14

12 10 8 6 4 2 0

6

5 4 3 2 1

0150 200 250 300 150200 250 300 350 400 450 500 550 600650

TYPICAL CHARACTERISTICS

Figure 19. t_rr vs. di_F/dt (V_R = 400 V) di_F/dt, DIODE CURRENT SLOPE (A/m)

700 500

300 100 trr, REVERSE RECOVERY TIME (ns)

150

T_J = 25°C, IF = 75 A

900 1100 1300

Figure 20. Q_rr vs. di_F/dt (V_R = 400 V) di_F/dt, DIODE CURRENT SLOPE (A/m)

700 500

300

Q, REVERSE RECOVERY CHARGE (mrr 100

C) 3.0

900 1100 1300 2.0

Figure 21. I_rm vs. di_F/dt (V_R = 400 V) di_F/dt, DIODE CURRENT SLOPE (A/m)

500 300

I, REVERSE RECOVERY CURRENT (A)rm 100

50

900 1100 1300

700

Figure 22. V_F vs. T_J T_J, JUNCTION TEMPERATURE (°C)

25 0

−25

−50

−75 75 100 125 150 200

VF, FORWARD VOLTAGE (V)

3.5

2.5 0.5 0

1.0 130

110

90

70 50

40

30

20

10 0

T_J = 175°C, IF = 75 A

T_J = 25°C, IF = 75 A T_J = 175°C, IF = 75 A

1.0 2.5

TJ = 25°C, IF = 75 A T_J = 175°C, IF = 75 A

50 175

1.5 2.0 3.0

I_F = 50 A

I_F = 25 A I_F = 75 A 1.5

Figure 23. IGBT Transient Thermal Impedance ON−PULSE WIDTH (s)

1 0.1

0.01 0.0001

1

SQUARE−WAVE PEAK R(t) (°C/W)

0.00001 50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.282

Junction

C₁ C₂ R₁ R₂

Duty Factor = t1/t2

Peak TJ = PDM x Z_qJC + TC

Case

C_n R_n 0.1

0.01

0.001

0.0001

0.001

Ri (°C/W) Ci (J/°C) 0.0270 0.0037 0.0243 0.0225 0.0554 0.1121 0.0409

0.0130 0.0445 0.0571 0.0892 0.7725

0.000001

Figure 24. Diode Transient Thermal Impedance ON−PULSE WIDTH (s)

SQUARE−WAVE PEAK R(t) (°C/W) 50% Duty Cycle

20%

10%

5%

2%

Single Pulse 1

R_qJC = 0.622

Junction Case

C₁ C₂

R₁ R₂ R_n

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

1 0.1

0.01 0.0001

0.000001 0.00001 0.001

Ri (°C/W) Ci (J/°C) 0.000156 0.006394

0.1

0.01

0.001

0.007900 0.008527 0.025491 0.022800 0.121738 0.363338

0.001266 0.003708 0.003923 0.013870 0.008214 0.275226

Figure 25. Test Circuit for Switching Characteristics

Figure 26. Definition of Turn On Waveform

Figure 27. Definition of Turn Off Waveform

CASE 340AM ISSUE C

DATE 07 SEP 2021

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAMS*

XXXXXXXXX XXXXXXXXX

AYWWG XXXXXXXXX

AYWWG

98AON77284F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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