NGTB30N65IHL2WG IGBT

NGTB30N65IHL2WG IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features

• Extremely Efficient Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for Low Losses in IH Cooker Application

• ^T

= 175 ° C

• Soft, Fast Free Wheeling Diode

• This is a Pb−Free Device

• Inductive Heating

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 650 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

60 30

A

Pulsed collector current, T_pulse limited by T_Jmax

ICM 120 A

Diode forward current

@ TC = 25°C

@ TC = 100°C

I_F

60 30

A

Diode pulsed current, T_pulse limited by T_Jmax

IFM 120 A

Gate−emitter voltage VGE $20 V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

300 150

W

Operating junction temperature range

T_J −55 to +175 °C Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds

T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AL C

G

30 A, 650 V V

= 1.6 V

E

= 0.2 mJ

E

Device Package Shipping ORDERING INFORMATION

NGTB30N65IHL2WG TO−247 30 Units / Rail http://onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

30N65IHL2 AYWWG G

E C

Thermal resistance junction−to−case, for IGBT R_qJC 0.50 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 1.46 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited

V_GE = 0 V, I_C = 500 mA V_(BR)CES 650 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 30 A V_GE = 15 V, I_C = 30 A, T_J = 175°C

V_CEsat −

−

1.6 2.0

2.2

−

V Gate−emitter threshold voltage V_GE = V_CE, I_C = 150 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited

V_GE = 0 V, V_CE = 650 V V_GE = 0 V, V_CE = 650 V, T_{J =} 175°C

I_CES −

−

−

−

0.2 2

mA Gate leakage current, collector−emitter

short−circuited

V_GE = 20 V , V_CE = 0 V I_GES − − 100 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 3200 − pF

Output capacitance C_oes − 130 −

Reverse transfer capacitance C_res − 85 −

Gate charge total

V_CE = 480 V, I_C = 30 A, V_GE = 15 V

Q_g 135 nC

Gate to emitter charge Q_ge 26

Gate to collector charge Q_gc 66

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turn−off delay time T_J = 25°C

V_CC = 400 V, I_C = 30 A R_g = 10 W V_GE = 0 V/ 15V

t_d(off) 145 ns

Fall time t_f 71

Turn−off switching loss E_off 0.2 mJ

Turn−off delay time T_J = 150°C

V_CC = 400 V, I_C = 30 A R_g = 10 W V_GE = 0 V/ 15V

t_d(off) 151 ns

Fall time t_f 94

Turn−off switching loss E_off 0.41 mJ

DIODE CHARACTERISTIC

Forward voltage V_GE = 0 V, I_F = 30 A

V_GE = 0 V, I_F = 30 A, T_J = 175°C

V_F 1.1

1.0

1.3 V

Reverse recovery time T_J = 25°C

I_F = 30 A, V_R = 200 V di_F/dt = 200 A/ms

t_rr 430 ns

Reverse recovery charge Q_rr 7700 nc

Reverse recovery current I_rrm 35 A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

8 V 120

100 80 60 40 20 0

0 1 2 3 4 5 6 7 8

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 1. Output Characteristics 10 V

9 V

7 V

8 V

V_GE = 20 V to 13 V

11 V 10 V 9 V 8 V 7 V

0 1 2 3 4 5 6 7 8

120 100 80 60 40 20 0

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 2. Output Characteristics

120 100 80 60 40 20 0

0 1 2 3 4 5 6 7 8

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 3. Output Characteristics 11 V

10 V

9 V

V_GE, GATE−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 4. Typical Transfer Characteristics 120

100 80 60 40 20 0

0 4 8 12 14

−75 3.00 2.50

2.00

1.50 1.00 0.50

−25 25 75 125 175

T_J, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 5. V_CE(sat) vs. T_J

0 10 20 90 100

10000

1000

100

10

80

30 40 50 60 70

V_CE, COLLECTOR−EMITTER VOLTAGE (V)

CAPACITANCE (pF)

Figure 6. Typical Capacitance T_J = 25°C V_GE = 20 V to 13 V

11 V

T_J = 150°C

T_J = −55°C V_GE = 20 V to 13 V T_J = 25°C

T_J = 150°C

−50 0 50 100 150 200

I_C = 50 A I_C = 40 A I_C = 30 A I_C = 20 A

C_ies

C_oes C_res

T_J = 25°C

2 6 10

V_F, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A)

Figure 7. Diode Forward Characteristics T_J = 25°C

T_J = 150°C 120

100 80 60 40 20 0

0 0.5 1.0 1.5 2.0

20

Q_G, GATE CHARGE (nC) VGE, GATE−EMITTER VOLTAGE (V)

Figure 8. Typical Gate Charge 14

10

2 0

0 20 40 60 80 100 120 160

T_J, JUNCTION TEMPERATURE (°C)

SWITCHING LOSS (mJ)

Figure 9. Switching Loss vs. Temperature

0 20 40 60 80 100 120 140 160

0.6 0.5 0.4 0.3 0.2 0.1 0

T_J, JUNCTION TEMPERATURE (°C)

SWITCHING TIME (ns)

Figure 10. Switching Time vs. Temperature 1000

0 20 40 60 80 100 120 140

100

10

160 t_d(off)

t_f

I_C, COLLECTOR CURRENT (A)

SWITCHING LOSS (mJ)

Figure 11. Switching Loss vs. I_C 1.6

4 14 24 34 44 54 74 84

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

I_C, COLLECTOR CURRENT (A)

SWITCHING TIME (ns)

Figure 12. Switching Time vs. I_C 1000

100

10

t_d(off) t_f

4 14 24 34 44 64 74

140 4

6 8 12 16 18

V_CE = 400 V V_GE = 15 V I_C = 30 A

V_CE = 400 V V_GE = 15 V I_C = 30 A R_g = 10 W

V_CE = 400 V V_GE = 15 V I_C = 30 A R_g = 10 W

V_CE = 400 V V_GE = 15 V T_J = 150°C R_g = 10 W

64

V_CE = 400 V V_GE = 15 V T_J = 150°C R_g = 10 W 54

E_off

E_off

TYPICAL CHARACTERISTICS

5 15 25 35 45 55 65 75 85

R_G, GATE RESISTOR (W) Figure 13. Switching Loss vs. R_G

SWITCHING LOSS (mJ)

1.0

5 15 25 35 45 55 65 75 85

0.5

0

SWITCHING TIME (ns)

R_G, GATE RESISTOR (W) Figure 14. Switching Time vs. R_G 1000

100

10

t_d(off)

t_f

V_CE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. V_CE

SWITCHING LOSS (mJ)

0.50

175 225 275 325 375 425 475 525 575 0.45

0.40 0.35 0.30 0.25 0.20 0.15 0.10 0

SWITCHING TIME (ns)

V_CE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Switching Time vs. V_CE 1000

100

10

175 225 275 325 375 425 475 525 575 t_d(off)

t_f

1000

1

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 17. Safe Operating Area

10 100 1000

100

10

0.1

50 ms

100 ms

1 ms dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 1

1 10 100 1000

V_GE = 15 V, T_C = 150°C V_CE = 400 V

V_GE = 15 V I_C = 30 A T_J = 150°C

V_CE = 400 V V_GE = 15 V I_C = 30 A T_J = 150°C

R_g = 10 W V_GE = 15 V I_C = 30 A T_J = 150°C 0.05

R_g = 10 W V_GE = 15 V I_C = 30 A T_J = 150°C

1

E_off E_off

50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.50

Figure 19. IGBT Transient Thermal Impedance

R(t) (°C/W)

PULSE TIME (sec) 0.0001

0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

0.01 0.1 1 10

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

Figure 20. Diode Transient Thermal Impedance PULSE TIME (sec)

R(t) (°C/W)

R_qJC = 1.46 50% Duty Cycle

20%

10%

5%

2%

Single Pulse

Junction Case

C₁ C₂

R₁ R₂ R_n

C_i = ti/R_i

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

R_i (°C/W) 0.064185 0.060802 0.050673 0.170671 0.142159 0.009510

Junction Case

C₁ C₂

R₁ R₂ R_n

C_i = ti/R_i

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n 0.001

C_i (J/W)

0.000004 0.001558 0.005201 0.019734 0.018529 0.070344 3.325233 26863.47

R_i (°C/W) 0.026867 0.000237 0.034915 0.039625 0.087617 0.161215

C_i (J/W)

0.336873 0.000037 0.013344 0.000286 0.000798 0.001141 0.001962 0.002968 0.265205 0.361515 0.148056

0.011924 0.027661 0.213586

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

PACKAGE DIMENSIONS

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.