IGBT - Field Stop 600 V, 60 A

600 V, 60 A

FGH60N60SMD

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2

generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature: T

= 175 ° C

• Positive Temperature Co−efficient for easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.9 V (Typ.) @ I

= 60 A

• High Input Impedance

• Fast Switching: E

= 7.5 uJ/A

• Tightened Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

TO−247−3LD CASE 340CK

See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION www.onsemi.com

V_CES I_C

600 V 60 A

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FGH60N60SMD = Specific Device Code

COLLECTOR (FLANGE) E

C G

$Y&Z&3&K FGH60N60 SMD

E C

G

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ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 600 V

V_GES Gate to Emitter Voltage ±20 V

Transient Gate to Emitter Voltage ±30 V

I_C Collector Current TC = 25°C 120 A

TC = 100°C 60 A

I_CM (Note 1) Pulsed Collector Current 180 A

IF Diode Forward Current TC = 25°C 60 A

TC = 100°C 30 A

I_FM (Note 1) Pulsed Diode Maximum Forward Current 180 A

PD Maximum Power Dissipation T_{C =} 25°C 600 W

T_C = 100°C 300 W

T_J Operating Junction Temperature −55 to +175 °C

T_STG Storage Temperature Range −55 to +175 °C

T_L Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS

Symbol Parameter Typ. Max. Unit

R_qJC (IGBT) Thermal Resistance, Junction to Case − 0.25 _C/W

R_qJC (Diode) Thermal Resistance, Junction to Case − 1.1 _C/W

R_qJA Thermal Resistance, Junction to Ambient − 40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package

Packing

Method Reel Size Tape Width

Qty per Tube

FGH60N60SMD FGH60N60SMD TO−247 Tube N/A N/A 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BV_CES Collector to Emitter Breakdown Voltage V_GE = 0 V, I_C = 250 mA 600 − − V DBVCES / DTJ Temperature Coefficient of Breakdown Voltage V_GE = 0 V, I_C = 250 mA − 0.6 − V/°C

I_CES Collector Cut−Off Current V_CE = V_CES, V_GE = 0 V − − 250 mA

IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA

ON CHARACTERISTICS

VGE(th) G−E Threshold Voltage I_C = 250 mA, VCE = V_GE 3.5 4.5 6.0 V

V_CE(sat) Collector to Emitter Saturation Voltage I_C = 60 A, V_GE = 15 V, − 1.9 2.5 V I_C = 60 A, V_GE = 15 V,

T_C = 175°C − 2.1 − V

DYNAMIC CHARACTERISTICS

Cies Input Capacitance V_CE = 30 V, V_GE = 0 V,

f = 1 MHz − 2915 − pF

C_oes Output Capacitance − 270 − pF

C_res Reverse Transfer Capacitance − 85 − pF

SWITCHING CHARACTERISTICS

Td(on) Turn−On Delay Time V_CC = 400 V, I_C = 60 A,

R_G = 3 W, VGE = 15 V, Inductive Load, T_C = 25°C

− 18 27 ns

T_r Rise Time − 47 70 ns

T_d(off) Turn−Off Delay Time − 104 146 ns

Tf Fall Time − 50 68 ns

Eon Turn−On Switching Loss − 1.26 1.94 mJ

Eoff Turn−Off Switching Loss − 0.45 0.6 mJ

Ets Total Switching Loss − 1.71 2.54 mJ

T_d(on) Turn−On Delay Time VCC = 400 V, IC = 60 A,

R_G = 3 W, VGE = 15 V, Inductive Load, T_C = 175°C

− 18 − ns

Tr Rise Time − 41 − ns

Td(off) Turn−Off Delay Time − 115 − ns

Tf Fall Time − 48 − ns

Eon Turn−On Switching Loss − 2.1 − mJ

E_off Turn−Off Switching Loss − 0.78 − mJ

Ets Total Switching Loss − 2.88 − mJ

Q_g Total Gate Charge V_CE = 400 V, I_C = 60 A,

VGE = 15 V − 189 284 nC

Qge Gate to Emitter Charge − 20 30 nC

Q_gc Gate to Collector Charge − 91 137 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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ELECTRICAL CHARACTERISTICS OF THE DIODE (T_C = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFM Diode Forward Voltage IF = 30 A TC = 25°C − 2.1 2.7 V

TC = 175°C − 1.7 −

Erec Reverse Recovery Energy I_F = 30 A,

di_F/dt = 200 A/ms TC = 175°C − 79 − uJ

Trr Diode Reverse Recovery Time TC = 25°C − 30 39 ns

T_C = 175°C − 72 −

Q_rr Diode Reverse Recovery Charge T_C = 25°C − 44 62 nC

T_C = 175°C − 238 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation

Voltage Characteristics Figure 4. Transfer Characteristics

Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level Figure 6. Saturation Voltage vs. V_GE Collector−Emitter Voltage, V_CE (V) Collector Current, IC (A)

Collector−Emitter Voltage, V_CE (V) Collector Current, IC (A)

Gate−Emitter Voltage,V_GE (V) Collector Current, IC (A)

Case Temperature, T_C (5C) Collector−Emitter Voltage, VCE (V)

Gate−Emitter Voltage, V_GE (V) Collector−Emitter Voltage, VCE (V)

Collector−Emitter Voltage, V_CE (V) Collector Current, IC (A)

4 8 12 16 20

0 30 60 90 120 150 180

V_GE = 8V TC = 25^oC 20V

15V 12V

10V

0 2 4 6

0 30 60 90 120 150 180

V_GE = 8V TC = 175^oC 20V15V 12V

10V

0 2 4 6

0 30 60 90 120 150 180

Common Emitter VGE = 15V TC = 25^oC TC = 175^oC

0 1 2 3 4 5 02 4 6 8 10 12

30 60 90 120 150 180

Common Emitter VCE = 20V TC = 25^oC TC = 175^oC

1.0 1.5 2.0 2.5

3.0 _120A

60A

IC = 30A Common Emitter

VGE = 15V 3.5

50 75 100 125 150 175

25 0

4 8 12 16 20

IC = 30A

60A 120A

Common Emitter T_C = −40^oC

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Saturation Voltage vs. V_GE Figure 8. Saturation Voltage vs. V_GE

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate Resistance Gate−Emitter Voltage, V_GE (V)

Collector−Emitter Voltage, VCE (V)

Gate−Emitter Voltage, V_GE(V) Collector−Emitter Voltage, VCE (V)

Collector−Emitter Voltage, V_CE (V)

Capacitance (pF)

Gate Charge, Qg(nC) Gate−Emitter Voltage, VGE (V)

Collector Current, IC(A)

Gate Resistance, R_G (W)

Switching Time (ns)

Collector−Emitter Voltage, V_CE (V)

1 10 100 1000

4 8 12 16 20

4 8 12 16 20

0 4 8 12 16 20

IC = 30A

60A 120A

Common Emitter T_C = 25^oC

0 4 8 12 16 20

120A

IC = 30A 60A

Common Emitter TC = 175^oC

0.1 1 10

0 1000 2000 3000 4000 5000 6000 7000

Common Emitter VGE = 0V, f = 1MHz TC = 25^oC

C_res C_oes C_ies

30 00 40 80 120 160 200

3 6 9 12 15

400V Common Emitter

TC = 25^oC

300V V_CC = 200V

0.01 0.1 1 10 100

10 ms1ms DC

*Notes:

1.T_C = 25 5C 2.T_J = 175 5C 3. Single Pulse

10 100 300

ms ms

Common Emitter VCC = 400V, VGE = 15V IC = 60A

TC = 25^oC TC = 175^oC t_d(on)

t_r

0 10 20 30 40 50

10 20 40 60 80 100

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 13. Turn−off Characteristics vs. Gate Resistance

Figure 14. Turn−on Characteristics vs. Collector Current

Figure 15. Turn−off Characteristics vs.

Collector Current

Figure 16. Switching Loss vs.

Gate Resistance

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics

Switching Time (ns)

Gate Resistance, R_G (W)

Switching Time (ns)

Collector Current, I_C (A)

Switching Time (ns)

Collector Current, I_C (A)

Switching Loss (mJ)

Gate Resistance, R_G (W)

Switching Loss (mJ)

Collector Current, I_C (A)

Collector Current, IC(A)

Collector−Emitter Voltage, V_CE (V)

0 10 20 30 40 50

10 100 1000

Common Emitter VCC = 400V, VGE = 15V IC = 60A

TC = 25^oC TC = 175^oC

t_d(off)

t_f 6000

0 30 60 90 120

1 10 100

Common Emitter VGE = 15V, RG = 3 T_C = 25^oC T_C = 175^oC t_d(off)

t_f 1000

0 10 20 30 40 50

0.1 1 5

Common Emitter V_CC = 400V, V_GE = 15V I_C = 60A

T_C = 25^oC T_C = 175^oC E_on

E_off

10

Common Emitter V_GE = 15V, R_G = 3 T_C = 25^oC T_C = 175^oC E_on

E_off

0 30 60 90 120

0.01 0.1 1

1 10 100 1000

1 10 100

Safe Operating Area V_GE = 15V, T_C = 175^oC 300

Common Emitter VGE = 15V, RG = 3 T_C = 25^oC

T_C = 175^oC t_r

t_d(on)

0 30 60 90 120

1 10 100 1000

W

W

W

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 19. Current Derating Figure 20. Load Current vs. Frequency

Figure 21. Forward Characteristics Figure 22. Reverse Current Collector Current, IC (A)

Case Temperature, T_C (5C)

Collector Current, IC (A)

Switching Frequency, f(Hz)

Reverse Current, IR (mA)

Reverse Voltage, V_R (V) Forward Current, IF (A)

Forward Voltage, V_F (V) 10

20 30 40 50 60 70 80 90 100 110

120 Common Emitter

VGE = 15V

o

130

25 50 75 100 125 150 175 01k 10k 100k 1M

20 40 60 80 100 120 140 160 180

Tc = 75^oC Square Wave

TJ < 175^oC,D = 0.5,VCE = 400V VGE = 15/0V, RG = 3

Tc = 100^oC

TC = 125^oC TC = 75^oC TC = 25^oC TC = 175^oC

TC = 25^oC TC = 75^oC−−−−

TC = 125^oC−−−−

TC = 175^oC

0 1 2 3 4

1 10 100 200

0 100 200 300 400 500 600

0.01 0.1 1 10 100 1000

T_C = 125^oC

T_C = 25^oC T_C = 175^oC

T_C = 75^oC 10000

Figure 23. Stored Charge Figure 24. Reverse Recovery Time Reverse Recovery Time, Trr(ns)

Forward Current, I_F (A) Stored Recovery Charge, Qrr (nC)

Forward Current, I_F (A)

0 10 20 30 40 50 60

0 50 100 150 200 250 300

TC = 25^oC TC = 175^oC−−−−

di_F/dt = 200A/ di_F/dt = 100A/

350

di_F/dt = 200A/

di_F/dt = 100A/

100

TC = 25^oC TC = 175^oC−−−−

0 10 20 30 40 50 60

20 30 40 50 60 70 80 90

ms ms

ms ms

W

Thermal Response (Zthjc)

Rectangular Pulse Duration (sec)

Figure 25. Transient Thermal Impedance of IGBT

1E−5 1E−4 1E−3 0.01 0.1 1

1E−3 0.01 0.1 0.5

0.01 0.02 0.1 0.05 0.2

single pulse

Duty Factor, D = t1/t2 Peak T_j = Pdm x Zthjc + T_C 0.5

t1

PDM

t2

Figure 26. Transient Thermal Impedance of Diode

1E−5 1E−4 1E−3 0.01 0.1 1

1E−3 0.01 0.1 1

0.010.02 0.1 0.05

0.2

single pulse

Rectangular Pulse Duration (sec)

Duty Factor, D = t1/t2 Peak T_j = Pdm x Zthjc + T_C 0.5

t1

PDM

t2

Thermal Response (Zthjc)

111 5

TO−247−3LD SHORT LEAD CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code A = Assembly Location Y = Year

WW = Work Week ZZ = Assembly Lot Code

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

GENERIC MARKING DIAGRAM*

AYWWZZ XXXXXXX XXXXXXX

E

D

L1 E2

(3X) b (2X) b2

b4

(2X) e

Q

L

0.25 ^M B A ^M A

A1 A2 A

c

B

D1 P1

S P

E1

D2

1 2 3 2

DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35 E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25 L1 3.69 3.81 3.93

P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

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DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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