NTMFS4931N MOSFET – Power, Single, N-Channel, SO-8 FL

© Semiconductor Components Industries, LLC, 2014

May, 2019 − Rev. 2 1 Publication Order Number:

NTMFS4931N/D

MOSFET – Power, Single, N-Channel, SO-8 FL

30 V, 246 A

Features

• Low R

to Improve Conduction and Overall Efficiency

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• OR−ing FET, Power Load Switch, Motor Control

• Refer to Application Note AND8195/D for Mounting Information

• Motor Control, UPS, Fault−Tolerant Power Systems, Hot Swap

Parameter Symbol Value Unit

Drain−to−Source Voltage V_DSS 30 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain Current R_qJA (Note 1)

Steady State

T_A = 25°C I_D 40 A

T_A = 100°C 25

Power Dissipation

R_qJA (Note 1) T_A = 25°C P_D 2.74 W

Continuous Drain Current R_qJA ≤ 10 s (Note 1)

T_A = 25°C ID 77 A

T_A = 100°C 48

Power Dissipation

R_qJA ≤ 10 s (Note 1) TA = 25°C PD 10.2 W Continuous Drain

Current R_qJA (Note 2)

T_A = 25°C I_D 23 A

TA = 100°C 15

Power Dissipation

R_qJA (Note 2) T_A = 25°C P_D 0.95 W

Continuous Drain Current R_qJC (Note 1)

TC = 25°C I_D 246 A

T_C =100°C 156

Power Dissipation

R_qJC (Note 1) TC = 25°C PD 104 W

Pulsed Drain Current T_A = 25°C, tp = 10 ms I_DM 490 A Operating Junction and Storage Temperature T_J,

T_STG −55 to

+150 °C

Source Current (Body Diode) IS 100 A

Drain to Source DV/DT dV/d_t 4.4 V/ns

SO−8 FLAT LEAD CASE 488AA

STYLE 1

MARKING DIAGRAM www.onsemi.com

A = Assembly Location

Y = Year

W = Work Week ZZ = Lot Traceability

4931N AYWZZ

1

V_(BR)DSS R_DS(ON) MAX I_D MAX 30 V 1.1 mW @ 10 V

246 A 1.5 mW @ 4.5 V

G (4)

S (1,2,3) N−CHANNEL MOSFET

D (5,6)

Device Package Shipping^† ORDERING INFORMATION

NTMFS4931NT1G SO−8 FL

(Pb−Free) 1500 / Tape & Reel NTMFS4931NT3G SO−8 FL

(Pb−Free) 5000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

S S S G

D

D D

D

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, I_L = 41 A_pk, L = 0.3 mH, R_G = 25 W)

E_AS 252 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) R_qJC 1.2

°C/W

Junction−to−Ambient – Steady State (Note 3) R_qJA 45.7

Junction−to−Ambient – Steady State (Note 4) R_qJA 132

Junction−to−Ambient – (t ≤ 10 s) (Note 3) R_qJA 12.3

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V_(BR)DSS VGS = 0 V, ID = 250 mA 30 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V_(BR)DSS/ TJ

18 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

V_DS = 24 V TJ = 25°C 1.0

T_J = 125°C 15 mA

Gate−to−Source Leakage Current I_GSS V_DS = 0 V, V_GS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V_GS(TH) V_GS = V_DS, I_D = 250 mA 1.2 1.6 2.2 V

Negative Threshold Temperature Coefficient V_GS(TH)/T_J 4.0 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V I_D = 30 A 0.85 1.1

I_D = 15 A 0.82 mW

V_GS = 4.5 V I_D = 30 A 1.2 1.5

I_D = 15 A 1.2

Forward Transconductance g_FS V_DS = 1.5 V, I_D = 15 A 86 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C_ISS

V_GS = 0 V, f = 1 MHz, V_DS = 15 V

9821

Output Capacitance C_OSS 2720 pF

Reverse Transfer Capacitance C_RSS 234

Total Gate Charge Q_G(TOT)

V_GS = 4.5 V, V_DS = 15 V; I_D = 30 A

61.5

Threshold Gate Charge Q_G(TH) 14.2 nC

Gate−to−Source Charge Q_GS 25.2

Gate−to−Drain Charge Q_GD 15.9

Total Gate Charge Q_G(TOT) V_GS = 10 V, V_DS = 15 V; I_D = 30 A 128 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t_d(ON)

V_GS = 4.5 V, V_DS = 15 V, I_D = 15 A, R_G = 3.0 W

27

Rise Time t_r 29 ns

Turn−Off Delay Time t_d(OFF) 36

Fall Time tf 24

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time td(ON)

V_GS = 10 V, V_DS = 15 V, ID = 15 A, RG = 3.0 W

15

Rise Time tr 17 ns

Turn−Off Delay Time td(OFF) 80

Fall Time tf 22

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD V_GS = 0 V,

IS = 30 A

T_J = 25°C 0.8 1.0

T_J = 125°C 0.62 V

Reverse Recovery Time t_RR

VGS = 0 V, dIS/dt = 100 A/ms, I_S = 30 A

64

Charge Time t_a 33 ns

Discharge Time t_b 31

Reverse Recovery Charge Q_RR 100 nC

PACKAGE PARASITIC VALUES

Source Inductance L_S

T_A = 25°C

0.50 nH

Drain Inductance L_D 0.005 nH

Gate Inductance L_G 1.84 nH

Gate Resistance R_G 0.7 1.8 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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TYPICAL CHARACTERISTICS

0 20 40 60 80 100 120 140 160 180 200 220

0 1 2 3 4

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics V_GS = 2.2 V

V_GS = 2.4 V V_GS = 2.6 V VGS = 2.8 V V_GS = 3 V V_GS = 3.2 V V_GS = 3.4 V

V_GS = 3.8 V to 10 V

0 20 40 60 80 100 120 140 160 180 200 220

1 1.5 2 2.5 3 3.5 4

V_GS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics T_J = 25°C

T_J = −55°C T_J = 125°C

VDS = 10 V

12

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

Figure 3. On−Resistance vs. Gate−to−Source Voltage

V_GS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

I_D = 30 A TJ = 25°C

0.0005 0.0006 0.0007 0.0008 0.0009 0.001 0.0011 0.0012 0.0013 0.0014 0.0015 0.0016 0.0017 0.0018

30 40 50 60 70 80 90 100 110 120 130 140 150 160

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

I_D, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

V_GS = 4.5 V

V_GS = 10 V T_J = 25°C

0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6

−50 −25 0 25 50 75 100 125 150

Figure 5. On−Resistance Variation with Temperature

T_J, JUNCTION TEMPERATURE (°C) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

I_D = 30 A V_GS = 10 V

10 100 1000 10000 100000

5 10 15 20 25 30

Figure 6. Drain−to−Source Leakage Current vs. Voltage

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (nA)

V_GS = 0 V

TJ = 150°C T_J = 125°C

T_J = 85°C 11

10 9 8 7 6 5 4 3 2 1 02.0

TYPICAL CHARACTERISTICS

0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000

0 5 10 15 20 25 30

V_DS, DRAIN−TO−SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

Figure 7. Capacitance Variation T_J = 25°C

C_oss

C_rss

C_iss V_GS = 0 V

10

0 10 20 30 40 50 60 70 80 90 100 110 120 130

Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge

Q_G, TOTAL GATE CHARGE (nC) VGS, GATE−TO−SOURCE VOLTAGE (V)

T_J = 25°C

VDD = 15 V VGS = 10 V ID = 30 A Q_GS Q_GD

1 10 100 1000 10000

1 10 100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

RG, GATE RESISTANCE (W) tr

t_d(off)

t_d(on) t_f V_DD = 15 V

I_D = 15 A V_GS = 10 V

0 5 10 15 20 25 30

0.4 0.5 0.6 0.7 0.8 0.9 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (V) V_GS = 0 V

Figure 10. Diode Forward Voltage vs. Current T_J = 25°C

T_J = 125°C

ID, DRAIN CURRENT (A)

V_DS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0 V < V_GS < 10 V

SINGLE PULSE T_C = 25°C

1 ms 10 ms

DC 100 ms

0 20 40 60 80 100 120 140 160 180 200 220 240 260

25 50 75 100 125 150

1 10 100

0.1 1

10 100 1000

T_J, STARTING JUNCTION TEMPERATURE (°C) I_D = 41 A

EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ)

Q_T

0.01 0.1 0.01

9 8 7 6 5 4 3 2 1 0

0.3

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TYPICAL CHARACTERISTICS

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

0.1 0.2

0.02 D = 0.5

0.05

SINGLE PULSE r(t) (°C/W)

t, TIME (s)

Figure 13. Thermal Response 0.01

0.00 20.00 40.00 60.00 80.00 100.00 120.00 140.00 160.00 180.00 200.00 220.00 240.00 260.00

0 10 20 30 40 50 60 70 80 90 100

GFS (S)

I_D (A)

Figure 14. GFS vs. I_D 10

1

0.1

0.01

M 3.00 3.40 q 0 _ −−− ^3.8012 _ DFN5 5x6, 1.27P

(SO−8FL) CASE 488AA

ISSUE N

DATE 25 JUN 2018 SCALE 2:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

XXXXXX = Specific Device Code A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

1 2 3 4

TOP VIEW

SIDE VIEW

BOTTOM VIEW D1

E1 q

D

E 2

2 B A

0.20 C

0.20 C

2 X

2 X

DIM MIN NOM MILLIMETERS A 0.90 1.00 A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28

D 5.15

D1 4.70 4.90 D2 3.80 4.00

E 6.15

E1 5.70 5.90 E2 3.45 3.65

e 1.27 BSC

G 0.51 0.575

K 1.20 1.35

L 0.51 0.575

L1 0.125 REF

A 0.10 C

0.10 C

DETAIL A

1 4

L1 e/2

8X

G D2 E2

K b

A 0.10 C B 0.05 c

L

DETAIL A c A1

4 X

C

SEATING PLANE

GENERIC MARKING DIAGRAM*

1

XXXXXX AYWZZ 1

MAX 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71

STYLE 1:

PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN

M

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.270

2X

0.750 1.000 0.905

4.530 1.530

4.560 0.495

3.200

1.330

0.965

2X 2X

4X 4X PIN 5

(EXPOSED PAD)

STYLE 2:

PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE

5.00 5.30

6.00 6.30

PITCH

DIMENSIONS: MILLIMETERS

1

RECOMMENDED e

2X

0.475

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.

98AON14036D

DOCUMENT NUMBER: Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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